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12 条记录 (耗时 0.017 秒)

    Method for fabricating patterned magnetic recording device
    2.
    发明授权
    Method for fabricating patterned magnetic recording device 有权
    图案化磁记录装置的制造方法

    公开(公告)号：US08900655B2

    公开(公告)日：2014-12-02

    申请号：US11542129

    申请日：2006-10-04

    申请人： Bing K. Yen ,  David S. Kuo ,  Dieter K. Weller ,  Kim Y. Lee ,  Koichi Wago

    发明人： Bing K. Yen ,  David S. Kuo ,  Dieter K. Weller ,  Kim Y. Lee ,  Koichi Wago

    IPC分类号： B05D5/12 ,  G11B5/73 ,  G11B5/65 ,  G11B5/855

    CPC分类号： G11B5/732 ,  G11B5/656 ,  G11B5/7325 ,  G11B5/855

    摘要： A method of fabricating a patterned perpendicular magnetic recording medium comprises steps of: (a) providing a layer stack including a magnetically soft underlayer (“SUL”) and an overlying non-magnetic interlayer; (b) forming a masking layer on the non-magnetic interlayer; (c) forming a resist layer on the masking layer; (d) forming a pattern of recesses extending through the resist layer and exposing spaced apart surface portions of the masking layer; (e) extending the pattern of recesses through the masking layer to expose spaced apart surface portions of the interlayer; and (f) at least partially filling the pattern of recesses with a magnetically hard material to form a perpendicular magnetic recording layer.

    摘要翻译： 制造图案化的垂直磁记录介质的方法包括以下步骤：（a）提供包括磁软底层（“SUL”）和上覆非磁性中间层的层堆叠; （b）在非磁性中间层上形成掩模层; （c）在掩模层上形成抗蚀剂层; （d）形成延伸穿过抗蚀剂层并露出掩模层的间隔开的表面部分的凹陷图案; （e）将凹槽的图案延伸穿过掩模层以暴露中间层的间隔开的表面部分; 和（f）至少部分地用磁性硬的材料填充凹槽的图案以形成垂直的磁记录层。

    Energy gradient ion beam deposition of carbon overcoats on rigid disk media for magnetic recordings
    6.
    发明授权
    Energy gradient ion beam deposition of carbon overcoats on rigid disk media for magnetic recordings 失效
    用于磁记录的刚性盘介质上的碳覆盖层的能量梯度离子束沉积

    公开(公告)号：US07018729B2

    公开(公告)日：2006-03-28

    申请号：US10611240

    申请日：2003-06-30

    申请人： Daryl J. Pocker ,  Jan-Ulrich Thiele ,  Richard L. White ,  Bing K. Yen

    发明人： Daryl J. Pocker ,  Jan-Ulrich Thiele ,  Richard L. White ,  Bing K. Yen

    IPC分类号： G11B5/72

    CPC分类号： C23C14/0605 ,  C23C14/48 ,  C23C16/26 ,  G11B5/012 ,  G11B5/72 ,  G11B5/82 ,  G11B5/8408 ,  Y10T428/265

    摘要： The fabrication of the overcoat layer starts with a low energy ion beam to avoid magnetic layer implantation problems, followed by higher deposition energies where the higher energy atoms are implanted into the previously formed lower energy overcoat layer, rather than the magnetic layer. The energy gradient ion beam deposition process therefore results in a thin overcoat layer that is denser than a comparable layer formed by low energy magnetron sputtering, and which overcoat layer provides good mechanical and corrosion protection to the magnetic layer, without degrading the magnetic properties of the magnetic layer.

    摘要翻译： 外涂层的制造以低能离子束开始，以避免磁层注入问题，随后是更高的沉积能量，其中较高的能原子被注入到先前形成的较低能量外涂层而不是磁性层中。 因此，能量梯度离子束沉积过程导致比由低能量磁控管溅射形成的可比层更致密的薄的外涂层，并且该外涂层为磁性层提供良好的机械和腐蚀保护，而不降低磁性能 磁性层。

    Thin film protective layer with buffering interface
    7.
    发明授权
    Thin film protective layer with buffering interface 失效
    具有缓冲接口的薄膜保护层

    公开(公告)号：US06969447B2

    公开(公告)日：2005-11-29

    申请号：US10756556

    申请日：2004-01-12

    申请人： Daryl J. Pocker ,  Jan-Ulrich Thiele ,  Bond-Yen Ting ,  Richard Longstreth White ,  Bing K. Yen

    发明人： Daryl J. Pocker ,  Jan-Ulrich Thiele ,  Bond-Yen Ting ,  Richard Longstreth White ,  Bing K. Yen

    IPC分类号： C23C14/06 ,  C23C14/34 ,  G11B5/012 ,  G11B5/72 ,  G11B5/82 ,  G11B5/84 ,  H01F41/32 ,  B05D1/18

    CPC分类号： C23C14/345 ,  C23C14/0658 ,  G11B5/012 ,  G11B5/72 ,  G11B5/82 ,  G11B5/8408 ,  H01F41/32

    摘要： A method for sputtering a thin film protective layer with improved durability is disclosed. The method reduces kinetic energy of the ions of the overcoat material during the initial period of deposition to form a buffering interface which reduces the interpenetration of the atoms of the protective layer into the underlying film. In the method of the invention the sputtering of the overcoat preferably begins with zero (or very low) voltage applied to the underlying film resulting in minimal ion implantation in the underlying film. The “high energy” phase of the process begins with increases in the magnitude of the negative bias voltage applied to the underlying film. The higher energy imparted to ions in the plasma result in a denser and harder film being formed over the initial buffer layer. The protective layer preferably comprises carbon and nitrogen.

    摘要翻译： 公开了一种用于溅射具有改善的耐久性的薄膜保护层的方法。 该方法在初始沉积期间降低外涂层材料的离子的动能，形成缓冲界面，从而减少保护层原子相互渗透到下面的膜中。 在本发明的方法中，外涂层的溅射优选以施加到下面的膜的零（或非常低的）电压开始，导致在底层膜中的最小离子注入。 该过程的“高能”阶段从施加到底层薄膜的负偏置电压的大小的增加开始。 在等离子体中赋予离子的较高能量导致在初始缓冲层上形成更致密和更硬的膜。 保护层优选包含碳和氮。

    Nanoimprint enhanced resist spacer patterning method
    9.
    发明授权
    Nanoimprint enhanced resist spacer patterning method 有权
    纳米压印增强型抗蚀剂间隔图案化方法

    公开(公告)号：US07846756B2

    公开(公告)日：2010-12-07

    申请号：US12318590

    申请日：2008-12-31

    申请人： Bing K. Yen ,  Chun-Ming Wang ,  Yung-Tin Chen ,  Steven Maxwell

    发明人： Bing K. Yen ,  Chun-Ming Wang ,  Yung-Tin Chen ,  Steven Maxwell

    IPC分类号： H01L21/00

    CPC分类号： H01L21/32139 ,  H01L21/0337 ,  H01L21/3086 ,  H01L27/101 ,  H01L27/1021

    摘要： A method of making a device is disclosed including: forming a first hard mask layer over an underlying layer; forming a first imprint resist layer over the underlying layer; forming first features over the first hard mask layer by bringing a first imprint template in contact with the first imprint resist layer; forming a first spacer layer over the first features; etching the first spacer layer to form a first spacer pattern and to expose top of the first features; removing the first features; patterning the first hard mask, using the first spacer pattern as a mask, to form first hard mask features; and etching at least part of the underlying layer using the first hard mask features as a mask.

    摘要翻译： 公开了一种制造器件的方法，包括：在下层上形成第一硬掩模层; 在所述下层上形成第一印记抗蚀剂层; 通过使第一印模模板与第一印模抗蚀剂层接触而在第一硬掩模层上形成第一特征; 在所述第一特征上形成第一间隔层; 蚀刻第一间隔层以形成第一间隔图案并暴露第一特征的顶部; 去除第一个特征; 使用第一间隔图案作为掩模来图案化第一硬掩模以形成第一硬掩模特征; 并使用第一硬掩模特征作为掩模蚀刻至少部分下层。