公开(公告)号：US08753920B2

公开(公告)日：2014-06-17

申请号：US13195444

申请日：2011-08-01

申请人： Bo Sung Kim ,  Doo-Hyoung Lee ,  Yeon-Taek Jeong ,  Ki-Beom Lee ,  Young-Min Kim ,  Tae-Young Choi ,  Seon-Pil Jang ,  Kang-Moon Jo

发明人： Bo Sung Kim ,  Doo-Hyoung Lee ,  Yeon-Taek Jeong ,  Ki-Beom Lee ,  Young-Min Kim ,  Tae-Young Choi ,  Seon-Pil Jang ,  Kang-Moon Jo

IPC分类号： H01L21/36

CPC分类号： H01L21/02628 ,  H01L21/02554 ,  H01L21/02565

摘要： Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn   (Formula 1) Herein, M is a metal ion, A is an organic ligand which includes α-substituted carboxylate, and n is a natural number.

摘要翻译： 提供一种用于氧化物半导体的前体组合物。 用于氧化物半导体的前体组合物包括由金属离子和有机配体形成的金属络合物，其中前体组合物由下式1表示。MAn（式1）这里，M是金属离子，A是 包括α-取代的羧酸酯的有机配体，n是自然数。

公开(公告)号：US20120244667A1

公开(公告)日：2012-09-27

申请号：US13195444

申请日：2011-08-01

申请人： Bo Sung KIM ,  Doo-Hyoung Lee ,  Yeon-Taek Jeong ,  Ki-Beom Lee ,  Young-Min Kim ,  Tae-Young Choi ,  Seon-Pil Jang ,  Kang-Moon Jo

发明人： Bo Sung KIM ,  Doo-Hyoung Lee ,  Yeon-Taek Jeong ,  Ki-Beom Lee ,  Young-Min Kim ,  Tae-Young Choi ,  Seon-Pil Jang ,  Kang-Moon Jo

IPC分类号： H01L21/335 ,  H01B1/12 ,  H01L21/20 ,  C07F17/00

CPC分类号： H01L21/02628 ,  H01L21/02554 ,  H01L21/02565

摘要： Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn   (Formula 1( Herein, M is a metal ion, A is an organic ligand which includes α-substituted carboxylate, and n is a natural number.

摘要翻译： 提供一种用于氧化物半导体的前体组合物。 用于氧化物半导体的前体组合物包括由金属离子和有机配体形成的金属络合物，其中前体组合物由下式1表示。MAn（式1（其中M是金属离子，A是 包括α-取代的羧酸酯的有机配体，n是自然数。

公开(公告)号：US08519393B2

公开(公告)日：2013-08-27

申请号：US12823043

申请日：2010-06-24

申请人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

发明人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

IPC分类号： H01L27/146 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.

摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。 半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。 源电极和漏极设置在半导体的第二部分和栅极绝缘层上。

公开(公告)号：US20110140094A1

公开(公告)日：2011-06-16

申请号：US12823043

申请日：2010-06-24

申请人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

发明人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L21/34 ,  H01L29/12

CPC分类号： H01L29/66765 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer

摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。 半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。 源电极和漏极设置在半导体的第二部分和栅极绝缘层上

公开(公告)号：US08367444B2

公开(公告)日：2013-02-05

申请号：US12902761

申请日：2010-10-12

申请人： Young-Min Kim ,  Bo-Sung Kim ,  Seon-Pil Jang ,  Seung-Hwan Cho ,  Kang-Moon Jo

发明人： Young-Min Kim ,  Bo-Sung Kim ,  Seon-Pil Jang ,  Seung-Hwan Cho ,  Kang-Moon Jo

IPC分类号： H01L21/02

CPC分类号： H01L29/78606 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1288

摘要： A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.

摘要翻译： 显示基板包括栅极线，栅极绝缘层，数据线，开关元件，保护绝缘层，栅极焊盘部分和数据焊盘部分。 栅极绝缘层设置在栅极线上。 开关元件连接到栅极线和数据线。 保护绝缘层设置在开关元件上。 栅极焊盘部分包括通过形成在栅极绝缘层上的第一孔与栅极线的端部接触的第一栅极焊盘电极和通过第二栅极焊盘电极与第一栅极焊盘电极接触的第二栅极焊盘电极 孔通过保护层形成。 数据焊盘部分包括通过形成在保护绝缘层上的第三孔与数据线的端部接触的数据焊盘电极。

公开(公告)号：US08633498B2

公开(公告)日：2014-01-21

申请号：US13112381

申请日：2011-05-20

申请人： Tae-Young Choi ,  Kang-Moon Jo ,  Bo-Sung Kim ,  Young-Min Kim

发明人： Tae-Young Choi ,  Kang-Moon Jo ,  Bo-Sung Kim ,  Young-Min Kim

IPC分类号： H01L29/18

CPC分类号： H01L27/1288 ,  H01L27/1225 ,  H01L27/1292

摘要： A display substrate includes a base substrate, a data line, a gate line, a switching element, a self assembled monolayer (SAM) and a pixel electrode. The data line is formed on the base substrate. The gate line is formed across the data line. The switching element includes a source electrode electrically connected to the data line, a drain electrode spaced apart from the source electrode, a semiconductor pattern covering the source and drain electrodes, and a gate electrode electrically connected to the gate line and facing the semiconductor pattern. The SAM is disposed around the semiconductor pattern and a conductive pattern including the data line. The pixel electrode is electrically connected to the switching element.

摘要翻译： 显示基板包括基底基板，数据线，栅极线，开关元件，自组装单层（SAM）和像素电极。 数据线形成在基底基板上。 栅极线跨越数据线形成。 开关元件包括电连接到数据线的源电极，与源电极间隔开的漏电极，覆盖源电极和漏电极的半导体图案，以及电连接到栅极线并面向半导体图案的栅电极。 SAM围绕半导​​体图案设置，并且包括数据线的导电图案。 像素电极电连接到开关元件。

公开(公告)号：US08168977B2

公开(公告)日：2012-05-01

申请号：US12622078

申请日：2009-11-19

申请人： Tae-Young Choi ,  Bo-Sung Kim ,  Young-Min Kim

发明人： Tae-Young Choi ,  Bo-Sung Kim ,  Young-Min Kim

IPC分类号： H01L29/04

CPC分类号： H01L27/1225 ,  G02F1/136209 ,  G02F1/13624 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1288

摘要： The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.

摘要翻译： 本发明提供一种在液晶显示器中具有高性能的薄膜晶体管，以及根据本发明的示例性实施例的液晶显示器的制造方法，包括：在基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成包括与所述源电极相对的源电极和漏电极的数据线; 形成限定像素区域并具有使栅极电极上的栅极绝缘层，栅极线上的源极电极和漏极电极以及数据线和漏极电极露出的开口区域; 在开口区域形成半导体; 在由分区限定的像素区域中形成滤色器; 以及在滤色器上形成连接到漏电极的像素电极。

公开(公告)号：US08460955B2

公开(公告)日：2013-06-11

申请号：US13430280

申请日：2012-03-26

申请人： Tae-Young Choi ,  Bo-Sung Kim ,  Young-Min Kim

发明人： Tae-Young Choi ,  Bo-Sung Kim ,  Young-Min Kim

IPC分类号： H01L21/00 ,  H01L51/40 ,  H01L21/84

CPC分类号： H01L27/1225 ,  G02F1/136209 ,  G02F1/13624 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1288

摘要： The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.

摘要翻译： 本发明提供了一种在液晶显示器中具有高性能的薄膜晶体管，以及根据本发明的示例性实施例的液晶显示器的制造方法，包括：在基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成包括与所述源电极相对的源电极和漏电极的数据线; 形成限定像素区域并具有使栅极电极上的栅极绝缘层，栅极线上的源极电极和漏极电极以及数据线和漏极电极露出的开口区域; 在开口区域形成半导体; 在由分区限定的像素区域中形成滤色器; 以及在滤色器上形成连接到漏电极的像素电极。

公开(公告)号：US20100270553A1

公开(公告)日：2010-10-28

申请号：US12622078

申请日：2009-11-19

申请人： Tae-Young CHOI ,  Bo-Sung Kim ,  Young-Min Kim

发明人： Tae-Young CHOI ,  Bo-Sung Kim ,  Young-Min Kim

IPC分类号： H01L33/00

CPC分类号： H01L27/1225 ,  G02F1/136209 ,  G02F1/13624 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1288

摘要： The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.

摘要翻译： 本发明提供了一种在液晶显示器中具有高性能的薄膜晶体管，以及根据本发明的示例性实施例的液晶显示器的制造方法，包括：在基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成包括与所述源电极相对的源电极和漏电极的数据线; 形成限定像素区域并具有使栅极电极上的栅极绝缘层，栅极线上的源极电极和漏极电极以及数据线和漏极电极露出的开口区域; 在开口区域形成半导体; 在由分区限定的像素区域中形成滤色器; 以及在滤色器上形成连接到漏电极的像素电极。

公开(公告)号：US20100244016A1

公开(公告)日：2010-09-30

申请号：US12813440

申请日：2010-06-10

申请人： Young-Min Kim ,  Tae-Young Choi

发明人： Young-Min Kim ,  Tae-Young Choi

IPC分类号： H01L51/54

CPC分类号： H01L51/0023 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0512

摘要： In a manufacturing method of a display substrate according to one or more embodiments, a plurality of thin films are patterned by using a photoresist film pattern having different thicknesses in each area on a substrate as etch masks. The photoresist film pattern may be etch-backed at least twice during the manufacturing process of the display substrate and may be used as the etch mask for patterns having shapes different from each other. Accordingly, the number of processes for manufacturing the mask patterns, which may be formed by a photolithography method in order to pattern the thin films formed on the substrate, may be reduced.

摘要翻译： 在根据一个或多个实施例的显示基板的制造方法中，通过使用在基板上的每个区域中具有不同厚度的光致抗蚀剂膜图案作为蚀刻掩模来对多个薄膜进行图案化。 在显示基板的制造过程中，光致抗蚀剂膜图案可以被蚀刻至少两次，并且可以用作具有彼此不同形状的图案的蚀刻掩模。 因此，为了对形成在基板上的薄膜进行图案化，可以通过光刻法形成掩模图案的制造工艺的数量可以减少。