公开(公告)号：US08753920B2

公开(公告)日：2014-06-17

申请号：US13195444

申请日：2011-08-01

申请人： Bo Sung Kim ,  Doo-Hyoung Lee ,  Yeon-Taek Jeong ,  Ki-Beom Lee ,  Young-Min Kim ,  Tae-Young Choi ,  Seon-Pil Jang ,  Kang-Moon Jo

发明人： Bo Sung Kim ,  Doo-Hyoung Lee ,  Yeon-Taek Jeong ,  Ki-Beom Lee ,  Young-Min Kim ,  Tae-Young Choi ,  Seon-Pil Jang ,  Kang-Moon Jo

IPC分类号： H01L21/36

CPC分类号： H01L21/02628 ,  H01L21/02554 ,  H01L21/02565

摘要： Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn   (Formula 1) Herein, M is a metal ion, A is an organic ligand which includes α-substituted carboxylate, and n is a natural number.

摘要翻译： 提供一种用于氧化物半导体的前体组合物。 用于氧化物半导体的前体组合物包括由金属离子和有机配体形成的金属络合物，其中前体组合物由下式1表示。MAn（式1）这里，M是金属离子，A是 包括α-取代的羧酸酯的有机配体，n是自然数。

公开(公告)号：US20120244667A1

公开(公告)日：2012-09-27

申请号：US13195444

申请日：2011-08-01

申请人： Bo Sung KIM ,  Doo-Hyoung Lee ,  Yeon-Taek Jeong ,  Ki-Beom Lee ,  Young-Min Kim ,  Tae-Young Choi ,  Seon-Pil Jang ,  Kang-Moon Jo

发明人： Bo Sung KIM ,  Doo-Hyoung Lee ,  Yeon-Taek Jeong ,  Ki-Beom Lee ,  Young-Min Kim ,  Tae-Young Choi ,  Seon-Pil Jang ,  Kang-Moon Jo

IPC分类号： H01L21/335 ,  H01B1/12 ,  H01L21/20 ,  C07F17/00

CPC分类号： H01L21/02628 ,  H01L21/02554 ,  H01L21/02565

摘要： Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn   (Formula 1( Herein, M is a metal ion, A is an organic ligand which includes α-substituted carboxylate, and n is a natural number.

摘要翻译： 提供一种用于氧化物半导体的前体组合物。 用于氧化物半导体的前体组合物包括由金属离子和有机配体形成的金属络合物，其中前体组合物由下式1表示。MAn（式1（其中M是金属离子，A是 包括α-取代的羧酸酯的有机配体，n是自然数。

公开(公告)号：US08760596B2

公开(公告)日：2014-06-24

申请号：US13173457

申请日：2011-06-30

申请人： Tae-Young Choi ,  Bo Sung Kim ,  Young Min Kim ,  Seon-Pil Jang ,  Kang Moon Jo ,  Yeon Taek Jeong ,  Ki Beom Lee

发明人： Tae-Young Choi ,  Bo Sung Kim ,  Young Min Kim ,  Seon-Pil Jang ,  Kang Moon Jo ,  Yeon Taek Jeong ,  Ki Beom Lee

IPC分类号： G02F1/136

CPC分类号： H01L27/1225 ,  G02F1/13439 ,  G02F2001/13685 ,  G02F2001/1676

摘要： A thin film transistor array panel includes a source electrode and a drain electrode on an insulating substrate, an oxide semiconductor on the insulating substrate and overlapping the source electrode and the drain electrode, a passivation layer overlapping the oxide semiconductor and on the insulating substrate, a gate electrode on the passivation layer, and a pixel electrode connected to the drain electrode. The gate electrode and the pixel electrode include a same material. The oxide semiconductor is between the source electrode and the gate electrode, and between the drain electrode and the gate electrode in a cross-sectional view of the thin film transistor array panel.

摘要翻译： 薄膜晶体管阵列面板包括绝缘基板上的源极和漏电极，绝缘基板上的氧化物半导体，与源电极和漏电极重叠，钝化层与氧化物半导体和绝缘基板上重叠， 钝化层上的栅极电极和连接到漏电极的像素电极。 栅电极和像素电极包括相同的材料。 在薄膜晶体管阵列面板的截面图中，氧化物半导体位于源电极和栅电极之间，在漏电极和栅电极之间。

公开(公告)号：US08519393B2

公开(公告)日：2013-08-27

申请号：US12823043

申请日：2010-06-24

申请人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

发明人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

IPC分类号： H01L27/146 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.

摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。 半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。 源电极和漏极设置在半导体的第二部分和栅极绝缘层上。

公开(公告)号：US20110140094A1

公开(公告)日：2011-06-16

申请号：US12823043

申请日：2010-06-24

申请人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

发明人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L21/34 ,  H01L29/12

CPC分类号： H01L29/66765 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer

摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。 半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。 源电极和漏极设置在半导体的第二部分和栅极绝缘层上

公开(公告)号：US20100308326A1

公开(公告)日：2010-12-09

申请号：US12790188

申请日：2010-05-28

申请人： Young-Min KIM ,  Bo-Sung Kim ,  Yeon-Taek Jeong ,  Tae-Young Choi ,  Seon-Pil Jang ,  Seung-Hwan Cho ,  Bo-Kyoung Ahn ,  Byeong-Soo Bae ,  Seok-Jun Seo

发明人： Young-Min KIM ,  Bo-Sung Kim ,  Yeon-Taek Jeong ,  Tae-Young Choi ,  Seon-Pil Jang ,  Seung-Hwan Cho ,  Bo-Kyoung Ahn ,  Byeong-Soo Bae ,  Seok-Jun Seo

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/7869

摘要： A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other.

摘要翻译： 薄膜晶体管阵列面板包括：绝缘基板; 形成在所述绝缘基板上并且包括金属无机盐和乙酸锌的氧化物半导体层; 栅电极与氧化物半导体层重叠; 介于氧化物半导体层和栅电极之间的栅极绝缘膜; 以及与氧化物半导体层至少部分重叠并且彼此分离的源电极和漏电极。

公开(公告)号：US08367444B2

公开(公告)日：2013-02-05

申请号：US12902761

申请日：2010-10-12

申请人： Young-Min Kim ,  Bo-Sung Kim ,  Seon-Pil Jang ,  Seung-Hwan Cho ,  Kang-Moon Jo

发明人： Young-Min Kim ,  Bo-Sung Kim ,  Seon-Pil Jang ,  Seung-Hwan Cho ,  Kang-Moon Jo

IPC分类号： H01L21/02

CPC分类号： H01L29/78606 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1288

摘要： A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.

摘要翻译： 显示基板包括栅极线，栅极绝缘层，数据线，开关元件，保护绝缘层，栅极焊盘部分和数据焊盘部分。 栅极绝缘层设置在栅极线上。 开关元件连接到栅极线和数据线。 保护绝缘层设置在开关元件上。 栅极焊盘部分包括通过形成在栅极绝缘层上的第一孔与栅极线的端部接触的第一栅极焊盘电极和通过第二栅极焊盘电极与第一栅极焊盘电极接触的第二栅极焊盘电极 孔通过保护层形成。 数据焊盘部分包括通过形成在保护绝缘层上的第三孔与数据线的端部接触的数据焊盘电极。

公开(公告)号：US20080296566A1

公开(公告)日：2008-12-04

申请号：US12156213

申请日：2008-05-30

申请人： Keun-Kyu Song ,  Jung-Han Shin ,  Bo-Sung Kim ,  Seon-Pil Jang ,  Seung-Hwan Cho ,  Min-Ho Yoon ,  Jung-Hun Noh

发明人： Keun-Kyu Song ,  Jung-Han Shin ,  Bo-Sung Kim ,  Seon-Pil Jang ,  Seung-Hwan Cho ,  Min-Ho Yoon ,  Jung-Hun Noh

IPC分类号： H01L29/02 ,  H01L21/00 ,  H01L27/28

CPC分类号： H01L51/0545 ,  H01L51/0558

摘要： An organic thin film transistor substrate for a display device includes a gate line, a data line insulated from the gate line, at least two organic thin film transistors, each of which is connected between the gate line and the data line, and both of which are commonly connected to a main drain electrode, and a pixel electrode connected to the main drain electrode.

摘要翻译： 用于显示装置的有机薄膜晶体管基板包括栅极线，与栅极线绝缘的数据线，至少两个有机薄膜晶体管，每个有源薄膜晶体管连接在栅极线和数据线之间， 通常连接到主漏电极和连接到主漏电极的像素电极。

公开(公告)号：US07834348B2

公开(公告)日：2010-11-16

申请号：US12388973

申请日：2009-02-19

申请人： Min-Ho Yoon ,  Jung-Han Shin ,  Seon-Pil Jang

发明人： Min-Ho Yoon ,  Jung-Han Shin ,  Seon-Pil Jang

IPC分类号： H01L35/24

CPC分类号： H01L29/41733 ,  H01L27/124 ,  H01L27/3274 ,  H01L51/0545

摘要： The present invention provides a display device and a manufacturing method thereof. The display device includes a gate line, a data line that is insulated from and crosses the gate line, a thin film transistor including a semiconductor layer and connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, and a dummy drain electrode adjacent to a channel region of the thin film transistor. The dummy drain electrode is not connected to the pixel electrode.

摘要翻译： 本发明提供一种显示装置及其制造方法。 显示装置包括栅极线，与栅极线绝缘并与栅极线交叉的数据线，包括半导体层并连接到栅极线和数据线的薄膜晶体管，连接到薄膜晶体管的像素电极， 以及与薄膜晶体管的沟道区相邻的虚拟漏电极。 虚设漏电极不连接到像素电极。

公开(公告)号：US07952091B2

公开(公告)日：2011-05-31

申请号：US12347438

申请日：2008-12-31

申请人： Seon-Pil Jang ,  Jung-Han Shin ,  Min-Ho Yoon ,  Seong-Sik Shin ,  Jung-Hun Noh

发明人： Seon-Pil Jang ,  Jung-Han Shin ,  Min-Ho Yoon ,  Seong-Sik Shin ,  Jung-Hun Noh

IPC分类号： H01L51/00

CPC分类号： H01L51/0545 ,  H01L51/107

摘要： Disclosed are an organic thin film transistor and a method of manufacturing the same. The organic thin film transistor includes a gate electrode, an insulating layer, an organic semiconductor layer, a protective layer, and source and drain electrodes. The insulating layer is on the gate electrode, and the organic semiconductor layer is on the insulating layer. The protective layer is on the organic semiconductor layer, and includes an electrode pattern part to expose the organic semiconductor layer. The source and drain electrodes are in the electrode pattern part and connected to the organic semiconductor layer.

摘要翻译： 公开了一种有机薄膜晶体管及其制造方法。 有机薄膜晶体管包括栅电极，绝缘层，有机半导体层，保护层以及源极和漏极。 绝缘层位于栅电极上，有机半导体层位于绝缘层上。 保护层在有机半导体层上，并且包括用于暴露有机半导体层的电极图案部分。 源极和漏极在电极图案部分中并连接到有机半导体层。