摘要:
Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. At least one of the predefined temporal pulse profiles may be triangular. The target class may include, for example unpassivated electrically conductive links or other bare metal structures. Based on the target class associated with the selected target, a laser pulse is generated having a triangular temporal pulse profile. The generated laser pulse is used to process the selected structure.
摘要:
Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. At least one of the predefined temporal pulse profiles may be triangular. The target class may include, for example unpassivated electrically conductive links or other bare metal structures. Based on the target class associated with the selected target, a laser pulse is generated having a triangular temporal pulse profile. The generated laser pulse is used to process the selected structure.