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    Display system with single crystal Si thin film transistors
    1.
    发明授权
    Display system with single crystal Si thin film transistors 有权
    具有单晶Si薄膜晶体管的显示系统

    公开(公告)号：US08072406B2

    公开(公告)日：2011-12-06

    申请号：US12823547

    申请日：2010-06-25

    申请人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

    发明人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

    IPC分类号： G09G3/36

    CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

    摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

    摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。

    Display System with Single Crystal Si Thin Film Transistors
    2.
    发明申请
    Display System with Single Crystal Si Thin Film Transistors 有权
    具有单晶Si薄膜晶体管的显示系统

    公开(公告)号：US20100259517A1

    公开(公告)日：2010-10-14

    申请号：US12823547

    申请日：2010-06-25

    申请人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

    发明人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

    IPC分类号： G06F3/038 ,  G02F1/136

    CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

    摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

    摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。

    Display system with single crystal SI thin film transistors
    3.
    发明授权
    Display system with single crystal SI thin film transistors 有权
    具有单晶SI薄膜晶体管的显示系统

    公开(公告)号：US07768611B2

    公开(公告)日：2010-08-03

    申请号：US11893594

    申请日：2007-08-16

    申请人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

    发明人： Bor-Yeu Tsaur ,  Hong K. Choi ,  Jason Lo

    IPC分类号： G02F1/1343 ,  G02F1/1339

    CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

    摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

    摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。

    Display system with single crystal Si thin film transistors
    4.
    发明申请
    Display system with single crystal Si thin film transistors 有权
    具有单晶Si薄膜晶体管的显示系统

    公开(公告)号：US20080049159A1

    公开(公告)日：2008-02-28

    申请号：US11893594

    申请日：2007-08-16

    申请人： Bor-Yeu Tsaur ,  Hong Choi ,  Jason Lo

    发明人： Bor-Yeu Tsaur ,  Hong Choi ,  Jason Lo

    IPC分类号： G02F1/136

    CPC分类号： G02F1/13439 ,  G02F1/1362 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654

    摘要： A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

    摘要翻译： 液晶显示器包括显示面板，其包括至少一个像素晶体管，与像素晶体管电连通的至少一个像素电极，至少一个公共电极以及像素电极和公共电极之间的液晶材料。 像素晶体管包括基本单晶硅的薄膜层，其厚度在约100nm至约200nm的范围内。 像素电极的厚度在约5nm至约20nm的范围内。 公共电极具有在约50nm和约200nm之间的厚度。

    Electron-emitting source and field emission display using the same
    8.
    发明申请
    Electron-emitting source and field emission display using the same 审中-公开
    电子发射源和场发射显示使用相同

    公开(公告)号：US20070290601A1

    公开(公告)日：2007-12-20

    申请号：US11651478

    申请日：2007-01-10

    申请人： Jason Lo ,  Jian-Min Jeng

    发明人： Jason Lo ,  Jian-Min Jeng

    IPC分类号： H01J63/04 ,  H01J1/62

    CPC分类号： H01J1/304 ,  H01J31/127 ,  H01J2201/30446

    摘要： An electron emission source and a field emission device using the same. The diamond-like carbon (DLC) film used as the electron emission source is featured by its film structures formed on the substrate surface arranged in a petal pattern. The height of the DLC flake is in micro scale and the thickness of the flake is in nano scale. The disclosed DLC flake film has a high aspect ratio. Hence, the DLC film has a good enhancing factor favorable for field emission, acting as a good electron-emitting source. In addition, the electron-emitting source material disclosed can be applied in a field emission display to act as a stable electron-emitting source.

    摘要翻译： 电子发射源和使用其的场发射装置。 用作电子发射源的类金刚石碳（DLC）膜的特征在于其形成在以花瓣图案布置的基板表面上的膜结构。 DLC薄片的高度为微尺度，薄片的厚度为纳米级。 所公开的DLC薄膜具有高的纵横比。 因此，DLC膜具有良好的增强因子，有利于场致发射，作为良好的电子发射源。 此外，所公开的电子发射源材料可以应用于场致发射显示器中以用作稳定的电子发射源。

    Electron emission source and field emission display device
    9.
    发明申请
    Electron emission source and field emission display device 审中-公开
    电子发射源和场致发射显示装置

    公开(公告)号：US20070290597A1

    公开(公告)日：2007-12-20

    申请号：US11634886

    申请日：2006-12-07

    申请人： Jason Lo ,  Jian-Min Jeng

    发明人： Jason Lo ,  Jian-Min Jeng

    IPC分类号： H01J9/02

    CPC分类号： H01J1/304 ,  H01J9/025 ,  H01J31/123

    摘要： An electron emission source and a field emission display device are disclosed. The electron emission source includes a substrate and an electron emission layer formed on the substrate. The electron emission layer includes a composition of diamond-like carbon (DLC) film structures. The height of the DLC flakes is in micrometer scale, and the thickness of the DLC flakes is in nanometer scale. Hence, the aspect ratio of the DLC film structures is high. Therefore, the DLC film can be used as a good electron emission source. A conductive layer can be optionally deposited on the surface of the substrate for further enhancing DLC film in electron emission.

    摘要翻译： 公开了电子发射源和场发射显示装置。 电子发射源包括在基板上形成的基板和电子发射层。 电子发射层包括金刚石碳（DLC）膜结构的组合物。 DLC薄片的高度为微米级，DLC薄片的厚度为纳米级。 因此，DLC膜结构的纵横比高。 因此，DLC膜可以用作良好的电子发射源。 导电层可任选地沉积在衬底的表面上，用于进一步增强电子发射中的DLC膜。

    Isotropic zero CTE reinforced composite materials
    10.
    发明申请
    Isotropic zero CTE reinforced composite materials 有权
    各向同性零CTE增强复合材料

    公开(公告)号：US20050223846A1

    公开(公告)日：2005-10-13

    申请号：US11150258

    申请日：2005-06-13

    申请人： Jason Lo ,  Nicola Maffei

    发明人： Jason Lo ,  Nicola Maffei

    IPC分类号： C04B30/00 ,  C04B41/51 ,  C04B41/88 ,  C22C29/12 ,  C22C32/00

    CPC分类号： C04B41/009 ,  B22F2998/00 ,  C04B30/00 ,  C04B41/5155 ,  C04B41/88 ,  C04B2111/00922 ,  C22C29/12 ,  C22C32/0089 ,  C22C2001/1073 ,  Y10T428/12486 ,  Y10T428/12611 ,  Y10T428/12736 ,  C04B41/4521 ,  C04B41/4523 ,  C04B35/495 ,  C04B14/30 ,  C04B14/303 ,  C04B40/02 ,  C04B41/45 ,  C04B41/51 ,  C04B38/00 ,  C22C1/1078

    摘要： A reinforced composite material, having isotropic thermal expansion properties and a low coefficient of thermal expansion over at least the temperature range of from about 0° C. to at least about 150° C., which composite material comprises in combination a first continuous phase comprising a three dimensional preformed bonded powder material reinforcement, including a bonding agent, and in which the bonded powder material is chosen from the group consisting of zirconium tungstate, hafnium tungstate, zirconium hafnium tungstate, and mixtures of zirconium tungstate and hafnium tungstate, and a second continuous phase matrix material chosen from the group consisting of aluminium, aluminium alloys in which aluminium is the major component, magnesium, magnesium alloys in which magnesium is the major component, titanium, titanium alloys in which titanium is the major component, engineering thermoplastics and engineering thermoplastics containing a conventional solid filler.

    摘要翻译： 一种增强复合材料，其在各种各向同性热膨胀性能和至少在约0℃至至少约150℃的温度范围内的低热膨胀系数，该复合材料组合包括第一连续相，包括 包括粘合剂的三维预成型粘合粉末材料增强材料，其中粘合的粉末材料选自钨酸锆，钨酸铪锆，钨酸锆铪和钨酸锆与钨酸铪的混合物，第二 选自铝，其中以铝为主要成分的铝合金，镁为主要成分的镁，镁合金，钛，钛为主要成分的钛合金，工程热塑性塑料和工程 含有常规固体填料的热塑性塑料。