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公开(公告)号：US20090206484A1
公开(公告)日：2009-08-20
申请号：US12031103
申请日：2008-02-14
IPC分类号： H01L21/768 , H01L23/538
CPC分类号： H01L21/76877 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.
摘要翻译： 为了改变铜线和通孔的微观结构，将钴添加到铜种子层，铜镀层或铜覆盖层。 钴可以是铜 - 钴合金的形式或作为非常薄的钴层。 本发明金属互连结构中竹结构中晶界的结构关闭了铜晶界扩散。 晶粒生长后的金属互连结构的组成含有约1ppm至约10原子浓度的钴。 晶粒边界从铜 - 钴合金线的顶表面延伸到铜 - 钴合金线的底表面，并且与任何其它晶界分开大于铜 - 钴合金线的宽度的距离。
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公开(公告)号：US08008199B2
公开(公告)日：2011-08-30
申请号：US12869113
申请日：2010-08-26
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/76877 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.
摘要翻译： 为了改变铜线和通孔的微观结构，将钴添加到铜种子层，铜镀层或铜覆盖层。 钴可以是铜 - 钴合金的形式或作为非常薄的钴层。 本发明金属互连结构中竹结构中晶界的结构关闭了铜晶界扩散。 晶粒生长后的金属互连结构的组成含有约1ppm至约10原子浓度的钴。 晶粒边界从铜 - 钴合金线的顶表面延伸到铜 - 钴合金线的底表面，并且与任何其它晶界分开大于铜 - 钴合金线的宽度的距离。
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公开(公告)号：US20100323517A1
公开(公告)日：2010-12-23
申请号：US12869113
申请日：2010-08-26
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.
摘要翻译： 为了改变铜线和通孔的微观结构，将钴添加到铜种子层，铜镀层或铜覆盖层。 钴可以是铜 - 钴合金的形式或作为非常薄的钴层。 本发明金属互连结构中竹结构中晶界的结构关闭了铜晶界扩散。 晶粒生长后的金属互连结构的组成含有约1ppm至约10原子浓度的钴。 晶粒边界从铜 - 钴合金线的顶表面延伸到铜 - 钴合金线的底表面，并且与任何其它晶界分开大于铜 - 钴合金线的宽度的距离。
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公开(公告)号：US07843063B2
公开(公告)日：2010-11-30
申请号：US12031103
申请日：2008-02-14
CPC分类号： H01L21/76877 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.
摘要翻译： 为了改变铜线和通孔的微观结构，将钴添加到铜种子层，铜镀层或铜覆盖层。 钴可以是铜 - 钴合金的形式或作为非常薄的钴层。 本发明金属互连结构中竹结构中晶界的结构关闭了铜晶界扩散。 晶粒生长后的金属互连结构的组成含有约1ppm至约10原子浓度的钴。 晶粒边界从铜 - 钴合金线的顶表面延伸到铜 - 钴合金线的底表面，并且与任何其它晶界分开大于铜 - 钴合金线的宽度的距离。
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公开(公告)号：US20130062769A1
公开(公告)日：2013-03-14
申请号：US13232085
申请日：2011-09-14
IPC分类号： H01L23/535 , H01L21/768
CPC分类号： H01L21/7684 , H01L21/2885 , H01L21/76841 , H01L21/76873 , H01L21/76877 , H01L21/76883 , H01L23/53233 , H01L23/53238 , H01L23/535 , H01L2924/0002 , H01L2924/00
摘要： A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.
摘要翻译： 金属互连结构和金属互连结构的制造方法。 锰（Mn）被掺入到铜（Cu）互连结构中，以便在90nm以下的技术中改变微观结构以实现竹型晶界。 优选地，竹颗粒在小于Blech长度的距离处分离，使得避免通过晶界的铜（Cu）扩散。 添加的Mn还触发Cu颗粒向金属线底部的生长，从而形成达到底面的真正的竹结构，消除沿着金属线长度取向的晶界的Cu扩散机理 。
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公开(公告)号：US08492897B2
公开(公告)日：2013-07-23
申请号：US13232085
申请日：2011-09-14
IPC分类号： H01L23/48
CPC分类号： H01L21/7684 , H01L21/2885 , H01L21/76841 , H01L21/76873 , H01L21/76877 , H01L21/76883 , H01L23/53233 , H01L23/53238 , H01L23/535 , H01L2924/0002 , H01L2924/00
摘要： A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.
摘要翻译： 金属互连结构和金属互连结构的制造方法。 锰（Mn）被掺入到铜（Cu）互连结构中，以便在90nm以下的技术中改变微观结构以实现竹型晶界。 优选地，竹颗粒在小于“漂白”长度的距离处分离，以便避免通过晶界的铜（Cu）扩散。 添加的Mn还触发Cu颗粒向金属线底部的生长，从而形成达到底面的真正的竹结构，消除沿着金属线长度取向的晶界的Cu扩散机理 。
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公开(公告)号：US08901414B2
公开(公告)日：2014-12-02
申请号：US13232648
申请日：2011-09-14
申请人： Brett C. Baker-O'Neal , Qiang Huang
发明人： Brett C. Baker-O'Neal , Qiang Huang
摘要： A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer.
摘要翻译： 提供了具有改进性能的光电器件，例如太阳能电池。 光伏器件包括含有一定量的杂质的含铜层，其含量足以阻止铜扩散到下面的半导体衬底中。 位于半导体衬底的前侧表面上的栅格图案内的含铜层包括位于至少一个金属扩散阻挡层上方的杂质含量为200ppm以上的电镀含铜材料。
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公开(公告)号：US20130065351A1
公开(公告)日：2013-03-14
申请号：US13604223
申请日：2012-09-05
申请人： Brett C. Baker-O'Neal , Qiang Huang
发明人： Brett C. Baker-O'Neal , Qiang Huang
IPC分类号： H01L31/18
摘要： A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer.
摘要翻译： 提供了具有改进性能的光电器件，例如太阳能电池。 光伏器件包括含有一定量的杂质的含铜层，其含量足以阻止铜扩散到下面的半导体衬底中。 位于半导体衬底的前侧表面上的栅格图案内的含铜层包括位于至少一个金属扩散阻挡层上方的杂质含量为200ppm以上的电镀含铜材料。
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公开(公告)号：US20130061916A1
公开(公告)日：2013-03-14
申请号：US13232648
申请日：2011-09-14
申请人： Brett C. Baker-O'Neal , Qiang Huang
发明人： Brett C. Baker-O'Neal , Qiang Huang
IPC分类号： H01L31/0216 , H01L31/18 , H01L31/0224
摘要： A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer.
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公开(公告)号：US11477846B2
公开(公告)日：2022-10-18
申请号：US17045754
申请日：2019-04-06
申请人： ZTE Corporation , Yonggang Fang , Qiang Huang , ZhiQiang Han , Bo Sun
发明人： Yonggang Fang , Qiang Huang , ZhiQiang Han , Bo Sun
IPC分类号： H04W80/12 , H04L67/1095 , H04W8/08 , H04W80/02
摘要： Application mobility is a unique feature of the edge computing to support relocation of application instance across edge computing hosts or between edge computing host and cloud computing over underlying mobile network. With the active-standby mode application instance implementation with support of L2 networks, the application mobility could achieve the service continuity with low latency switching time. An application mobility mechanism can be implemented in the data plane of edge computing host under the control of edge computing platform and management. It can be also implemented in L2 switching function of the User Plane Function in 5G networks.
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