公开(公告)号：US09064992B1

公开(公告)日：2015-06-23

申请号：US14460173

申请日：2014-08-14

申请人： Brett Z Nosho ,  Rajesh D Rajavel ,  Hasan Sharifi ,  Sevag Terterian

发明人： Brett Z Nosho ,  Rajesh D Rajavel ,  Hasan Sharifi ,  Sevag Terterian

IPC分类号： H01L31/00 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035236 ,  H01L31/02016 ,  H01L31/065 ,  H01L31/09 ,  H01L31/1013 ,  H01L31/109 ,  H01L31/11 ,  H01L31/18 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

摘要： A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (

摘要翻译： 基于II型超晶格（T2SL）的双频带红外探测器结构已被开发和实验验证。 根据本发明的原理的结构被设计用于单个铟凸块结构并且利用省略传统p-n结区域的T2SL屏障设计。 屏障设计包括多个周期，其中每个周期包括多个单层掺杂的P型。 通过选择组合物，每个周期的单层数和周期数，在第一吸收层和第二吸收层之间的导带中产生过渡区，其允许以低偏差（对于两个带为<100mV）进行操作和显示 较长波段的暗电流密度可与使用单色检测器获得的相当。

公开(公告)号：US08835979B1

公开(公告)日：2014-09-16

申请号：US13152896

申请日：2011-06-03

申请人： Terence J De Lyon ,  Rajesh D Rajavel ,  Hasan Sharifi

发明人： Terence J De Lyon ,  Rajesh D Rajavel ,  Hasan Sharifi

IPC分类号： H01L31/102

CPC分类号： H01L31/035272 ,  H01L27/14649 ,  H01L27/14652 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0328 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1035 ,  H01L31/109 ,  H01L31/11 ,  H01L31/1105 ,  H01L31/111 ,  H01L31/1113 ,  H01L31/1116 ,  H01L31/1844 ,  Y02E10/544

摘要： Using a multiple layer, varied composition barrier layer in place of the typical single layer barrier layer of an infrared photodetector results in a device with increased sensitivity and reduced dark current. A first barrier is adjacent the semiconductor contact; a second barrier layer is between the first barrier layer and the absorber layer. The barrier layers may be doped N type or P type with Beryllium, Carbon, Silicon or Tellurium. The energy bandgap is designed to facilitate minority carrier current flow in the contact region and block minority current flow outside the contact region.

摘要翻译： 使用多层，代替红外光电探测器的典型单层阻挡层的各种组成阻挡层导致具有增加的灵敏度和降低的暗电流的器件。 第一屏障邻近半导体触点; 第二阻挡层位于第一阻挡层和吸收层之间。 阻挡层可以是掺杂有N型或P型的铍，碳，硅或碲。 能量带隙被设计为便于接触区域中的少数载流子电流流动并阻止接触区域外的少数电流。