PLASMA PROCESSING APPARATUS, DEPOSITION METHOD, METHOD OF MANUFACTURING METAL PLATE HAVING DLC FILM, METHOD OF MANUFACTURING SEPARATOR, AND METHOD OF MANUFACTURING ARTICLE
    10.
    发明申请
    PLASMA PROCESSING APPARATUS, DEPOSITION METHOD, METHOD OF MANUFACTURING METAL PLATE HAVING DLC FILM, METHOD OF MANUFACTURING SEPARATOR, AND METHOD OF MANUFACTURING ARTICLE 审中-公开
    等离子体处理装置,沉积方法,制造具有DLC膜的金属板的方法,制造分离器的方法和制造方法

    公开(公告)号:US20120045591A1

    公开(公告)日:2012-02-23

    申请号:US13195291

    申请日:2011-08-01

    申请人: Ge Xu

    发明人: Ge Xu

    IPC分类号: C23C16/50 C23C16/26

    CPC分类号: C23C16/26 C23C16/515

    摘要: A plasma processing apparatus includes a holder holding an object to be processed in a vacuum chamber while being electrically connected to the object, a first take-up portion configured to take up an electrically conductive sheet and set at a potential different from that of the object at the time of plasma processing, and a second take-up portion configured to take up the electrically conductive sheet which is fed from the first take-up portion and passes through a position facing a processing surface of the object held by the holder.

    摘要翻译: 一种等离子体处理装置,包括保持在真空室中被处理物体同时与物体电连接的保持架;第一卷取部,其构成为吸收导电片并且设定为与物体不同的电位 在等离子体处理时,以及第二卷取部,其构成为吸收从第一卷取部送出的导电片,并通过面对由保持体保持的被处理物的处理面的位置。