摘要:
A hermetically sealed glass package and method for manufacturing the hermetically sealed glass package are described herein using an OLED display as an example. Basically, the hermetically sealed OLED display is manufactured by providing a first substrate plate and a second substrate plate and depositing a frit onto the second substrate plate. OLEDs are deposited on the first substrate plate. An irradiation source (e.g., laser, infrared light) is then used to heat the frit which melts and forms a hermetic seal that connects the first substrate plate to the second substrate plate and also protects the OLEDs. The frit is glass that was doped with at least one transition metal and possibly a CTE lowering filler such that when the irradiation source heats the frit, it softens and forms a bond. This enables the frit to melt and form the hermetic seal while avoiding thermal damage to the OLEDs.
摘要:
A hermetically sealed glass package and method for manufacturing the hermetically sealed glass package are described herein using an OLED display as an example. Basically, the hermetically sealed OLED display is manufactured by providing a first substrate plate and a second substrate plate and depositing a frit onto the second substrate plate. OLEDs are deposited on the first substrate plate. An irradiation source (e.g., laser, infrared light) is then used to heat the frit which melts and forms a hermetic seal that connects the first substrate plate to the second substrate plate and also protects the OLEDs. The frit is glass that was doped with at least one transition metal and possibly a CTE lowering filler such that when the irradiation source heats the frit, it softens and forms a bond. This enables the frit to melt and form the hermetic seal while avoiding thermal damage to the OLEDs.
摘要:
A hermetically sealed glass package and method for manufacturing the hermetically sealed glass package are described herein using an OLED display as an example. Basically, the hermetically sealed OLED display is manufactured by providing a first substrate plate and a second substrate plate and depositing a frit onto the second substrate plate. OLEDs are deposited on the first substrate plate. An irradiation source (e.g., laser, infrared light) is then used to heat the frit which melts and forms a hermetic seal that connects the first substrate plate to the second substrate plate and also protects the OLEDs. The frit is glass that was doped with at least one transition metal and possibly a CTE lowering filler such that when the irradiation source heats the frit, it softens and forms a bond. This enables the frit to melt and form the hermetic seal while avoiding thermal damage to the OLEDs.
摘要:
A hermetically sealed glass package and method for manufacturing the hermetically sealed glass package are described herein using an OLED display as an example. In one embodiment, the hermetically sealed glass package is manufactured by providing a first substrate plate and a second substrate plate. The second substrate contains at least one transition or rare earth metal such as iron, copper, vanadium, manganese, cobalt, nickel, chromium, neodymium and/or cerium. A sensitive thin-film device that needs protection is deposited onto the first substrate plate. A laser is then used to heat the doped second substrate plate in a manner that causes a portion of it to swell and form a hermetic seal that connects the first substrate plate to the second substrate plate and also protects the thin film device. The second substrate plate is doped with at least one transition metal such that when the laser interacts with it there is an absorption of light from the laser in the second substrate plate, which leads to the formation of the hermetic seal while avoiding thermal damage to the thin-film device. Another embodiment of the hermetically sealed glass package and a method for manufacturing that hermetically sealed glass package are also described herein.
摘要:
A family of glasses from the rare earth alumino-silicate (RE2O3-Al2O3-SiO2) ternary system exhibiting high strain point and low liquidus temperatures; preferably the La2O3 -Al2O3-SiO2 ternary system. The glasses are excellent candidates for electronics applications and have the following composition, expressed in mole percent and calculated from the glass batch on an oxide basis: 60-85% SiO2, 10-25% Al2O3, and 4-15% RE2O3.
摘要翻译:来自稀土铝硅酸盐的玻璃系列(RE 2 O 3 3 -AL 2 O 3 - 表现出高应变点和低液相线温度的三元体系; 优选的是2-O 3 -OR 3-N 3 -SiO 2 3 N 3 系统。 该玻璃是用于电子应用的极好的候选物,并且具有以摩尔百分比表示的以下组成,并以氧化物计从玻璃批料:60-85%SiO 2,10-25%Al 2 sub> 3 sub>和4-15%RE 2 O 3 3。
摘要:
A sealing method for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device (e.g., a hermetically sealed OLED device) are described herein. The sealing method includes the steps of: (1) cooling an un-encapsulated device; (2) depositing a sealing material over at least a portion of the cooled device to form an encapsulated device; and (3) heat treating the encapsulated device to form a hermetically sealed device. In one embodiment, the sealing material is a low liquidus temperature inorganic (LLT) material such as, for example, tin-fluorophosphate glass, tungsten-doped tin fluorophosphate glass, chalcogenide glass, tellurite glass, borate glass and phosphate glass. In another embodiment, the sealing material is a Sn2+-containing inorganic oxide material such as, for example, SnO, SnO+P2O5 and SnO+BPO4.
摘要翻译:这里描述了用于减少密封装置所需的时间和所得的密封装置(例如,气密密封的OLED装置)的密封方法。 密封方法包括以下步骤:(1)冷却未封装的装置; (2)在冷却装置的至少一部分上沉积密封材料以形成封装装置; 和(3)对封装的装置进行热处理以形成密封装置。 在一个实施方案中,密封材料是低液相线温度无机(LLT)材料,例如锡 - 氟磷酸盐玻璃,掺杂钨的锡氟磷酸盐玻璃,硫族化物玻璃,碲酸盐玻璃,硼酸盐玻璃和磷酸盐玻璃。 在另一个实施方案中,密封材料是含Sn 2+的无机氧化物材料,例如SnO,SnO + P 2 O 5, SUB>和SnO + BPO 4 SUB>。
摘要:
The invention is directed to chalcogenide glasses suitable for use in plastics forming processes. The glasses have the general formula YZ, where Y is Ge, As, Sb or a mixture of two or more of the same; Z is S, Se, Te, or a mixture of two or more of the same; and Y and Z are present in amounts (in atomic/element percent) in the range of Y=15-70% and Z=30-85%. The chalcogenide glasses of the invention have a 10,000 poise temperature of 400 ° C. and are resistant to crystallization when processed at high shear rates at their 10,000 poise temperature. The glasses can be used to make, among other items, molded telecommunication elements, lenses and infrared sensing devices.
摘要:
The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the strain point of the glass or glass-ceramic equal to or greater than about 800° C.
摘要:
In one aspect, a method is provided for molding from glass complex optical components such as lenses, microlens, arrays of microlenses, and gratings or surface-relief diffusers having fine or hyperfine microstructures suitable for optical or electro-optical applications. In another aspect, mold masters or patterns, which define the profile of the optical components, made on metal alloys, particularly titanium or nickel alloys, or refractory compositions, with or without a non-reactive coating are provided. Given that molding optical components from oxide glasses has numerous drawbacks, it has been discovered in accordance with the invention that non-oxide glasses substantially eliminates these drawbacks. The non-oxide glasses, such as chalcogenide, chalcohalide, and halide glasses, may be used in the mold either in bulk, planar, or power forms. In the mold, the glass is heated to about 10-110° C., preferably about 50° C., above its transition temperature (Tg), at which temperature the glass has a viscosity that permits it to flow and conform exactly to the pattern of the mold.
摘要:
The dual wavelength pumping scheme controls the relative population of the termination state vis-a-vis the metastable state. Praseodymium doped chalcogenide glass and a variety of thulium doped glasses are described as examples. The relative pump powers or wavelengths may be adjusted to control the gain spectrum of the amplifier, making the amplifier useful in a variety of different optical systems including wavelength division multiplexed systems.