摘要:
Methods of forming images on substrates in printing and apparatuses for forming images on substrates in printing are provided. An exemplary embodiment of the methods of forming images on substrates in printing includes applying ink onto a surface of a substrate; irradiating the ink on the surface of the substrate with first radiation to partially-cure the ink; applying pressure to the substrate and partially-cured ink at a nip with a first surface of a first member and a second surface of a second member to level the ink on the surface of the substrate; and irradiating the as-leveled ink on the surface of the substrate with second radiation to substantially fully cure the ink.
摘要:
Apparatuses and methods for forming images on substrates in printing are provided. An exemplary embodiment of the apparatuses includes a first marking station for applying a first ink having a first color to a substrate; a first partial-curing station downstream from the first marking station including a first radiant energy source for irradiating the first ink on the substrate with first radiation to partially-cure the first ink; a second marking station downstream from the first partial-curing station for applying a second ink having a second color to the substrate; a second partial-curing station downstream from the second marking station including a second radiant energy source for irradiating the first ink and the second ink on the substrate with second radiation to further partially-cure the first ink and to partially-cure the second ink; a leveling device formed by a first member and a second member, the first member and second member being configured to apply pressure to the partially-cured first ink and second ink when the substrate is received at a nip to level the first ink and second ink on the surface of the substrate; and a post-leveling curing device for irradiating the as-leveled first ink and second ink on the surface of the substrate to substantially-fully cure the first ink and the second ink.
摘要:
Apparatuses and methods for forming images on substrates in printing are provided and may include a first marking station for applying a first ink having a first color to a surface of a substrate, a first partial-curing station downstream from the first marking station, a second marking station downstream from the first partial-curing station for applying a second ink having a second color to the surface of the substrate, a second partial-curing station downstream from the second marking station, a leveling device for applying pressure to the substrate and the partially-cured first ink and second ink to level the first ink and second ink on the surface of the substrate, and a post-leveling curing device for irradiating the as-leveled first ink and second ink on the surface of the substrate to substantially-fully cure the first ink and the second ink.
摘要:
Apparatuses and methods for forming images on substrates in printing are provided and may include a first marking station for applying a first ink having a first color to a surface of a substrate, a first partial-curing station downstream from the first marking station, a second marking station downstream from the first partial-curing station for applying a second ink having a second color to the surface of the substrate, a second partial-curing station downstream from the second marking station, a leveling device for applying pressure to the substrate and the partially-cured first ink and second ink to level the first ink and second ink on the surface of the substrate, and a post-leveling curing device for irradiating the as-leveled first ink and second ink on the surface of the substrate to substantially-fully cure the first ink and the second ink.
摘要:
Polyetherimide-b-polysiloxane block copolymers are useful as surface layers for fuser and fixing members in various printing devices, including electrostatographic imaging systems and ballistic aerosol marking devices. Optionally, the polyetherimide-b-polysiloxane block copolymers are fluorinated, or include at least 50% by weight siloxane.
摘要:
Apparatuses useful for printing and methods of are provided. The apparatus includes a user interface for operating the printing apparatus, a fuser for fusing media, the fuser having a plurality of temperature settings, a gloss meter for measuring gloss of an image fused on the media, and a controller controlling the printing apparatus, wherein the controller: a) causes fusing of a plurality of media of a first type at a nominal fusing temperature, and then measuring a temperature of the pressure roll as a steady state pressure roll temperature, b) causes media of the first type to be input to the fuser to fuse an image onto the media, the fuser having a first fusing temperature, c) causes the gloss meter to measure a gloss level of the image fused on the media, and sending the measured gloss level with the first type of media to the controller, d) causes steps b) and c) to be repeated at various fusing temperatures different from the first fusing temperature, and saving the measured gloss levels with corresponding fuser temperatures, e) in response to a user indication of a desired gloss level received over the user interface, sets a temperature of the pressure roll to the steady state pressure roll temperature, and f) fuses media utilizing one of the measured fusing temperatures corresponding to the desired gloss level.
摘要:
This invention relates to high nucleation density organometallic ruthenium compounds. This invention also relates to a process for producing a high nucleation density organometallic ruthenium compound comprising reacting a bis(substituted-pentadienyl)ruthenium compound with a substituted cyclopentadiene compound under reaction conditions sufficient to produce said high nucleation density organometallic ruthenium compound. This invention further relates to a method for producing a film, coating or powder by decomposing a high nucleation density organometallic ruthenium compound precursor, thereby producing the film, coating or powder.
摘要:
This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要:
This invention relates to organometallic compounds having the formula (L1)yM(L2)z wherein M is a metal or metalloid, L1 is the same or different and is (i) a substituted or unsubstituted anionic 4 electron donor ligand or (ii) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand or (ii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 2; and z is an integer of from 0 to 2; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要:
This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.