公开(公告)号：US5547978A

公开(公告)日：1996-08-20

申请号：US346240

申请日：1994-11-23

申请人： Burton G. Christensen ,  Takashi Egawa ,  Yasuyuki Ichimaru ,  Shokichi Ohuchi ,  Tsuneo Okonogi ,  Arthur A. Patchett ,  Seiji Shibahara ,  Seiji Tsutsumni

发明人： Burton G. Christensen ,  Takashi Egawa ,  Yasuyuki Ichimaru ,  Shokichi Ohuchi ,  Tsuneo Okonogi ,  Arthur A. Patchett ,  Seiji Shibahara ,  Seiji Tsutsumni

IPC分类号： A61K31/40 ,  A61K31/401 ,  A61K31/42 ,  A61K31/425 ,  A61K31/44 ,  A61K31/505 ,  A61P25/00 ,  A61P25/28 ,  C07D401/14 ,  C07D403/14 ,  C07D409/14 ,  C07D413/14 ,  C07D417/14 ,  C07D498/04 ,  C07D207/06 ,  C07D209/08 ,  C07D277/06

CPC分类号： C07D401/14 ,  C07D403/14 ,  C07D409/14 ,  C07D413/14 ,  C07D417/14

摘要： The invention relates to derivatives of pyrrolidin-2-ylcarbonylheterocyclic compound of the general formula ##STR1## in which R.sup.1 represents C.sub.1-6 alkyl, C.sub.1-20 cycloalkyl, aryl or heteroaryl,R.sup.2 represents a heterocyclic compound selected from the group consisting of 2-thiazole, 2-oxazole, 2-imidazole, 2-pyrrole, 2-thiophene, 2-benzothiazole, 2-benzoxazole, 2-benzimidazole, 2-indole, 2-thiazolo[5,4-b]pyridine, 2-oxazolo[4,5-b]pyridine, 2-imidazo[4,5-b]pyridine, 5-thiazole, 2-thiazoline, 2-pyridine, 3-pyridine, 5-pyrimidine, 2-pyrazine, 2-triazole or 2-pyrazole wherein the heterocyclic compound may be unsubstituted or substituted independently with R.sup.4 or R.sup.5 wherein R.sup.4 and R.sup.5 are H, C.sub.1-5 alkyl, aryl or R.sup.4 and R.sup.5 may be ortho substituents on the heterocyclic compounds and connected to form an aryl or heteroaryl ring,A represents a cyclic amino acid, X is oxygen atom, thiomethlene or methylene residue, m is an integer from 1 to 5, to a process for the preparation thereof, to composition containing them, and to the use thereof.

摘要翻译： 本发明涉及通式“IMAGE”的吡咯烷-2-基羰基杂环化合物的衍生物，其中R 1表示C 1-6烷基，C 1-20的环烷基，芳基或杂芳基，R 2表示选自下列的杂环化合物：2- 噻唑，2-恶唑，2-咪唑，2-吡咯，2-噻吩，2-苯并噻唑，2-苯并恶唑，2-苯并咪唑，2-吲哚，2-噻唑并[5,4-b]吡啶，2-恶唑并[ 4,5-b]吡啶，2-咪唑并[4,5-b]吡啶，5-噻唑，2-噻唑啉，2-吡啶，3-吡啶，5-嘧啶，2-吡嗪，2-三唑或2- 吡唑，其中杂环化合物可以是未取代的或独立地被R4或R5取代，其中R4和R5是H，C1-5烷基，芳基或R4和R5可以是杂环化合物上的邻位取代基并且连接形成芳基或杂芳基环， A表示环状氨基酸，X为氧原子，巯基或亚甲基残基，m为1〜5的整数，其制备方法为组合物cont 指导他们，以及使用它们。

公开(公告)号：US08431271B2

公开(公告)日：2013-04-30

申请号：US12736901

申请日：2009-05-22

申请人： Yukiko Fujino ,  Yoshinobu Yasunaga ,  Akihiro Fujii ,  Yohei Shibata ,  Mariko Kohmoto ,  Takashi Egawa ,  Toru Tabuchi ,  Hiroe Nakagawa ,  Tokuo Inamasu ,  Toshiyuki Nukuda

发明人： Yukiko Fujino ,  Yoshinobu Yasunaga ,  Akihiro Fujii ,  Yohei Shibata ,  Mariko Kohmoto ,  Takashi Egawa ,  Toru Tabuchi ,  Hiroe Nakagawa ,  Tokuo Inamasu ,  Toshiyuki Nukuda

IPC分类号： H01M4/58 ,  H01M4/52 ,  H01M4/24 ,  C09K3/00

CPC分类号： C01B25/45 ,  C01P2002/72 ,  C01P2006/12 ,  H01M4/136 ,  H01M4/5825 ,  H01M4/625 ,  H01M10/052 ,  H01M2004/021 ,  Y02E60/122

摘要： The invention provides a polyanion-based positive active material which can improve storage stability (especially, high temperature storage stability), charge and discharge cycle performance and the like of a lithium secondary battery, and a lithium secondary battery using the same. The positive active material for a lithium ion secondary battery contains lithium iron cobalt phosphate represented by the general formula: LiyFe(1-x)CoxPO4(0

摘要翻译： 本发明提供一种能够提高锂二次电池的蓄电稳定性（特别是高温保存稳定性），充放电循环性能等的聚阴离子系正极活性物质及使用其的锂二次电池。 用于锂离子二次电池的正极活性材料包含由以下通式表示的磷酸铁锂：LiyFe（1-x）CoxPO4（0

公开(公告)号：US20110068293A1

公开(公告)日：2011-03-24

申请号：US12736901

申请日：2009-05-22

申请人： Yukiko Fujino ,  Yoshinobu Yasunaga ,  Akihiro Fujii ,  Yohei Shibata ,  Mariko Kohmoto ,  Takashi Egawa ,  Toru Tabuchi ,  Hiroe Nakagawa ,  Tokuo Inamasu ,  Toshiyuki Nukuda

发明人： Yukiko Fujino ,  Yoshinobu Yasunaga ,  Akihiro Fujii ,  Yohei Shibata ,  Mariko Kohmoto ,  Takashi Egawa ,  Toru Tabuchi ,  Hiroe Nakagawa ,  Tokuo Inamasu ,  Toshiyuki Nukuda

IPC分类号： H01M4/58

CPC分类号： C01B25/45 ,  C01P2002/72 ,  C01P2006/12 ,  H01M4/136 ,  H01M4/5825 ,  H01M4/625 ,  H01M10/052 ,  H01M2004/021 ,  Y02E60/122

摘要： The invention provides a polyanion-based positive active material which can improve storage stability (especially, high temperature storage stability), charge and discharge cycle performance and the like of a lithium secondary battery, and a lithium secondary battery using the same. The positive active material for a lithium ion secondary battery contains lithium iron cobalt phosphate represented by the general formula: LiyFe(1-x)CoxPO4 (0

摘要翻译： 本发明提供一种能够提高锂二次电池的蓄电稳定性（特别是高温保存稳定性），充放电循环性能等的聚阴离子系正极活性物质及使用其的锂二次电池。 锂离子二次电池用正极活性物质含有由通式Li y Fe（1-x）Co x PO 4（0

公开(公告)号：US20050009221A1

公开(公告)日：2005-01-13

申请号：US10873767

申请日：2004-06-22

申请人： Makoto Miyoshi ,  Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa ,  Hiroyasu Ishikawa

发明人： Makoto Miyoshi ,  Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa ,  Hiroyasu Ishikawa

IPC分类号： C30B29/38 ,  C23C16/34 ,  C30B25/02 ,  C30B29/40 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205

CPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262

摘要： A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carrier gas for the Group-V source gas to flow over a predetermined monocrystalline wafer maintained at 1,000° C. or more and also includes a step of epitaxially growing a nitride film, including a GaN layer, on the monocrystalline wafer by a vapor phase reaction of the source gases. At least one of the carrier gases contains nitrogen while the wafer temperature is being increased before the reaction is carried out. At least one of the carrier gases contains hydrogen and nitrogen and has a total hydrogen and nitrogen content of 90 percent by volume or more in at least one part of the epitaxially growing step.

摘要翻译： 制造包括高电阻率GaN层的氮化物膜的方法包括以下步骤：允许含有有机金属化合物的III族源气体，含有氨的V族气体，用于III族源气体的载气 ，并且用于V族源气体的载气在保持在1000℃或更高的预定单晶晶片上流动，并且还包括在单晶晶片上外延生长包括GaN层的氮化物膜的步骤 源气体的气相反应。 在反应进行之前，至少一种载气含有氮，同时晶片温度升高。 至少一种载气含有氢和氮，并且在外延生长步骤的至少一部分中，总氢和氮的总含量为90体积％以上。

公开(公告)号：US4713354A

公开(公告)日：1987-12-15

申请号：US834363

申请日：1986-02-28

申请人： Takashi Egawa ,  Yoshiaki Sano

发明人： Takashi Egawa ,  Yoshiaki Sano

IPC分类号： H01L29/812 ,  H01L21/20 ,  H01L21/265 ,  H01L21/324 ,  H01L21/338 ,  H01L21/322

CPC分类号： H01L21/3245

摘要： In a method of manufacturing semiconductor devices wherein a III-V compound semiconductor substrate is annealed in gas atmosphere of which the gas includes an element constituting the III-V compound semiconductor substrate to reduce the dislocation density near the III-V compound semiconductor substrate surface.

摘要翻译： 在制造半导体器件的方法中，其中III-V族化合物半导体衬底在其气体包括构成III-V族化合物半导体衬底的元件的气体气氛中进行退火，以降低III-V族化合物半导体衬底表面附近的位错密度。

公开(公告)号：US07825417B2

公开(公告)日：2010-11-02

申请号：US12193811

申请日：2008-08-19

申请人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

发明人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

IPC分类号： H01L27/15 ,  H01L21/00

CPC分类号： C30B29/403 ,  C30B25/20 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  Y10T428/24942

摘要： A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

摘要翻译： 提供了抑制外延晶片弯曲的技术。 通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。 中间层主要由通式（GaxIny）N（0＆nlE; x＆nlE; 1,0

公开(公告)号：US06697863B1

公开(公告)日：2004-02-24

申请号：US09390259

申请日：1999-09-03

申请人： Takashi Egawa ,  Koji Hino

发明人： Takashi Egawa ,  Koji Hino

IPC分类号： G06F1300

CPC分类号： H04L45/566 ,  H04L29/06 ,  H04L67/10 ,  H04L69/329

摘要： Method and device for use in an active node included in an active network to allocate a sequence of packets received by the active node are provided. At first, the node receives each packet of the sequence and allocates each packet to a part of the resources by processing the packet sequence. Next, the node schedules a duration available for the part of the resources and measures the duration. And finally, the node releases the part of the resources with the remaining parts of the resources unreleased.

摘要翻译： 提供了用于在活动网络中包括的活动节点中用于分配由主动节点接收的分组序列的方法和装置。 首先，节点接收序列的每个分组，并通过处理分组序列将每个分组分配给资源的一部分。 接下来，节点安排可用于部分资源的持续时间并测量持续时间。 最后，节点释放资源的剩余部分的部分资源未发布。

公开(公告)号：US20110001127A1

公开(公告)日：2011-01-06

申请号：US12735259

申请日：2008-12-17

申请人： Ryo Sakamoto ,  Jo Shimizu ,  Tsuneo Ito ,  Takashi Egawa

发明人： Ryo Sakamoto ,  Jo Shimizu ,  Tsuneo Ito ,  Takashi Egawa

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L29/155 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/04 ,  H01L33/12

摘要： A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of AlXGa1-XN graded such that a content ratio of Al in the composition decreases continuously or discontinuously in a crystal growing direction; a superlattice composite layer, formed on the composition graded layer, comprising a high Al-containing layer comprising a composition of AlYGa1-YN and a low Al-containing layer comprising a composition of AlZGa1-ZN that are laminated alternately; and a nitride semiconductor layer formed on the superlattice composite layer.

摘要翻译： 提供了一种半导体材料，包括：在Si衬底或其上形成的中间层上形成的组成分级层，其包含AlXGa1-XN的组成，其分级使得组合物中Al的含量比在晶体生长方向上连续地或不连续地降低 ; 在组成梯度层上形成的超晶格复合层，包括含有AlYGa1-YN组成的高含Al层和交替叠层的包含AlZGa1-ZN组成的低含Al层; 以及形成在超晶格复合层上的氮化物半导体层。

公开(公告)号：US07479658B2

公开(公告)日：2009-01-20

申请号：US10909477

申请日：2004-08-02

申请人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

发明人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

IPC分类号： H01L27/15 ,  H01L21/00

CPC分类号： C30B29/403 ,  C30B25/20 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  Y10T428/24942

摘要： A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

摘要翻译： 提供了抑制外延晶片弯曲的技术。 通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。 中间层主要由通式（GaxIny）N（0 <= x <= 1,0 <= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或 GaN），不含Al。 中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃至不超过1000℃的温度下外延形成。

公开(公告)号：US20080276612A1

公开(公告)日：2008-11-13

申请号：US12149654

申请日：2008-05-06

申请人： Takashi Egawa

发明人： Takashi Egawa

IPC分类号： B60T11/20

CPC分类号： B60T11/232

摘要： A master cylinder includes a cylinder body, a reservoir connection port formed at a surface of the cylinder body and being in communication with a reservoir, a pressure chamber formed inside of the cylinder body, a reservoir fluid passage connecting the reservoir connection port and the pressure chamber, a valve mechanism accommodated within the reservoir connection port and reducing an amount of fluid flowing in the reservoir fluid passage in a case where the reservoir fluid passage is at a high pressure, and a valve body including a small diameter cylindrical portion and a large diameter cylindrical portion, the small diameter cylindrical portion forming a passage by means of which the reservoir and the reservoir fluid passage communicate, the large diameter cylindrical portion having one end connected to the small diameter cylindrical portion and the other end fixed to the reservoir connection port, the valve body accommodating the valve mechanism.

摘要翻译： 主缸包括缸体，形成在缸体表面并与储存器连通的储存器连接口，形成在缸体内部的压力室，连接储存器连接口的压力室和压力 容纳在贮存器连接口内的阀机构，在储存器流体通道处于高压的情况下，减少在储存器流体通道中流动的流体量;以及阀体，其包括小直径的圆筒部分和大的 所述小直径圆筒部分形成通道，所述储存器和所述储存器流体通道连通，所述大直径圆柱形部分的一端连接到所述小直径圆柱形部分，而另一端固定到所述储存器连接端口 所述阀体容纳所述阀机构。