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    SURFACE EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHY USING THE SURFACE EMITTING LASER
    2.
    发明申请
    SURFACE EMITTING LASER AND OPTICAL COHERENCE TOMOGRAPHY USING THE SURFACE EMITTING LASER 审中-公开
    使用表面发射激光的表面发射激光和光学相干光谱

    公开(公告)号：US20150380903A1

    公开(公告)日：2015-12-31

    申请号：US14754935

    申请日：2015-06-30

    申请人： CANON KABUSHIKI KAISHA

    发明人： Yasuhiro Nagatomo

    IPC分类号： H01S5/183 ,  G01B9/02

    CPC分类号： G01B9/02091 ,  G01B9/02001 ,  H01S5/142 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18366 ,  H01S5/2063 ,  H01S5/3432

    摘要： A surface emitting laser including a lower reflecting mirror, an active layer, and an upper reflecting mirror in that order, having an air gap between the active layer and the upper reflecting mirror, and being able to change a wavelength of light to be emitted, includes a light-intensity adjustment unit provided on an optical path of the air gap and having optical absorption or optical gain in a wavelength range of emission light of the surface emitting laser. The wavelength of the light to be emitted is changed by displacing the light-intensity adjustment unit and at least one of the upper reflecting mirror and the lower reflecting mirror.

    摘要翻译： 一种表面发射激光器，其具有依次具有下反射镜，有源层和上反射镜的表面发射激光器，其在有源层和上反射镜之间具有气隙，并且能够改变要发射的光的波长， 包括设置在气隙的光路上并具有表面发射激光器的发射光的波长范围内的光学吸收或光学增益的光强度调节单元。 通过使光强度调节单元和上反射镜和下反射镜中的至少一个移位来改变要发射的光的波长。

    PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION SYSTEM, AND MOVING BODY
    3.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION SYSTEM, AND MOVING BODY 有权

    公开(公告)号：US20230011124A1

    公开(公告)日：2023-01-12

    申请号：US17854281

    申请日：2022-06-30

    申请人： CANON KABUSHIKI KAISHA

    发明人： Yasuhiro Nagatomo

    IPC分类号： H01L27/146 ,  B60W30/09

    摘要： A photoelectric conversion device includes a semiconductor layer formed of silicon, a plurality of pixels formed in the semiconductor layer, and a pixel separation portion is formed to separate each of the plurality of pixels, wherein the pixel separation portion includes a metal filling portion and a dielectric film provided on a side portion of the metal filling portion, a material of the metal filling portion is copper, a material of the dielectric film is a silicon oxide, and a thickness of the dielectric film is not less than 50 nm and not more than 270 nm.

    Surface emitting laser and optical coherence tomography apparatus including the same
    5.
    发明授权
    Surface emitting laser and optical coherence tomography apparatus including the same 有权
    表面发射激光器和包括其的光学相干断层摄影装置

    公开(公告)号：US09318873B2

    公开(公告)日：2016-04-19

    申请号：US14755504

    申请日：2015-06-30

    申请人： CANON KABUSHIKI KAISHA

    发明人： Yasuhiro Nagatomo

    IPC分类号： H01S5/183 ,  H01S5/18 ,  G01B9/02 ,  H01S5/187

    CPC分类号： H01S5/18361 ,  G01B9/02004 ,  G01B9/02091 ,  H01S5/18 ,  H01S5/183 ,  H01S5/18308 ,  H01S5/18316 ,  H01S5/18322 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18363 ,  H01S5/18366 ,  H01S5/18369 ,  H01S5/1838 ,  H01S5/187 ,  H01S2301/163

    摘要： A surface emitting laser includes a lower reflector, an active layer, and an upper reflector that are arranged in that order; an air gap provided between the active layer and the upper reflector; and a slab provided on an optical path of the air gap and having a refractive index that is higher than a refractive index of the air gap. A position of at least one of the upper reflector and the lower reflector in an optical axis direction is changed to change a wavelength of emitted light. In the case where the position of the upper reflector is changed, a center of the slab in the optical axis direction is located between any antinode of a standing wave formed in the air gap and a node of the standing wave that is adjacent to and on an upper-reflector side of the antinode.

    摘要翻译： 表面发射激光器包括按照该顺序布置的下反射器，有源层和上反射器; 在所述有源层和所述上反射器之间设置的气隙; 以及设置在所述气隙的光路上并且具有高于所述气隙的折射率的折射率的板。 改变上反射器和下反射器中的至少一个在光轴方向上的位置以改变发射光的波长。 在上反射器的位置改变的情况下，板坯在光轴方向上的中心位于形成在气隙中的驻波的任何波腹和与之相邻的驻波的节点之间 波腹的上反射器侧。

    METHOD OF PRODUCING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR AND PHOTONIC CRYSTAL PREPARED ACCORDING TO THE METHOD
    6.
    发明申请
    METHOD OF PRODUCING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR AND PHOTONIC CRYSTAL PREPARED ACCORDING TO THE METHOD 审中-公开
    生产氮化物半导体微结构的方法和根据方法制备的光子晶体

    公开(公告)号：US20140327015A1

    公开(公告)日：2014-11-06

    申请号：US14336978

    申请日：2014-07-21

    申请人： CANON KABUSHIKI KAISHA

    发明人： Shoichi Kawashima ,  Takeshi Kawashima ,  Yasuhiro Nagatomo ,  Katsuyuki Hoshino

    IPC分类号： H01L29/20 ,  H01L29/04

    CPC分类号： H01L29/2003 ,  B82Y20/00 ,  G02B6/1225 ,  G02B6/136 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02667 ,  H01L29/045 ,  H01S5/105 ,  H01S5/2095 ,  H01S5/32341

    摘要： The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.

    摘要翻译： 制造GaN基微结构的方法包括制备在氮化物半导体的主表面上形成有沟槽的半导体结构和覆盖除了沟槽之外的氮化物半导体的主表面的热处理掩模的步骤，第一 在包含氮元素的气氛下对半导体结构进行热处理的热处理工序，在沟槽的侧壁的至少一部分上形成氮化物半导体的结晶面，在第一工序之后，除去热处理罩 热处理步骤和在包含氮元素的气氛下对半导体结构进行热处理的第二热处理步骤，以在氮化物半导体的形成有结晶面的侧壁上封闭沟槽的上部。