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    RESISTIVE MEMORY DEVICE AND OPERATING METHOD
    2.
    发明申请
    RESISTIVE MEMORY DEVICE AND OPERATING METHOD 审中-公开
    电阻式存储器件和操作方法

    公开(公告)号：US20160276030A1

    公开(公告)日：2016-09-22

    申请号：US15166679

    申请日：2016-05-27

    申请人： CHI-WEON YOON ,  HYUN-KOOK PARK ,  DAE-SEOK BYEON

    发明人： CHI-WEON YOON ,  HYUN-KOOK PARK ,  DAE-SEOK BYEON

    IPC分类号： G11C13/00

    CPC分类号： G11C13/0069 ,  G11C7/04 ,  G11C11/1675 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0061 ,  G11C2013/0071 ,  G11C2013/0083 ,  G11C2013/0092

    摘要： A method of operating a memory device includes; applying a pre-write voltage to a selected memory cell by applying a first voltage to a first signal line connected to the selected memory cell and a second voltage to a second signal line connected to the selected memory cell during a first set writing interval, wherein a level of the first voltage is higher than a level of the second voltage, and thereafter, applying a write voltage to the selected memory cell by applying a third voltage having a level lower than the level of the first voltage and higher than the level of the second voltage to the first signal line during a second set writing interval.

    摘要翻译： 操作存储器件的方法包括： 通过在连接到所选存储单元的第一信号线上施加第一电压并将第二电压施加到在第一设定写入间隔期间连接到所选存储单元的第二信号线，将预写电压施加到所选择的存储单元，其中 所述第一电压的电平高于所述第二电压的电平，然后通过施加具有低于所述第一电压的电平的电平的第三电压并高于所述第一电压的电平而对所选择的存储单元施加写入电压 在第二设定写入间隔期间到第一信号线的第二电压。

    CROSS-POINT MEMORY DEVICE INCLUDING MULTI-LEVEL CELLS AND OPERATING METHOD THEREOF
    3.
    发明申请
    CROSS-POINT MEMORY DEVICE INCLUDING MULTI-LEVEL CELLS AND OPERATING METHOD THEREOF 有权
    包括多级细胞的交叉点记忆装置及其操作方法

    公开(公告)号：US20160148678A1

    公开(公告)日：2016-05-26

    申请号：US14800060

    申请日：2015-07-15

    申请人： HYUN-KOOK PARK ,  CHI-WEON YOON ,  DAE-SEOK BYEON

    发明人： HYUN-KOOK PARK ,  CHI-WEON YOON ,  DAE-SEOK BYEON

    IPC分类号： G11C13/00 ,  G11C11/56

    CPC分类号： G11C13/004 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/56 ,  G11C11/5607 ,  G11C11/5642 ,  G11C13/0002 ,  G11C2013/0054 ,  G11C2213/71

    摘要： A method of operating a cross-point memory device, having an array of multilevel cells, includes performing a first reading operation with respect to the multilevel cells through a plurality of sensing operations to determine a first state and performing a second reading operation with respect to the multilevel cells through a plurality of sensing operations to determine a second state. A difference between a level of a first voltage used in a first sensing operation and a level of a second voltage used in a second sensing operation in the first reading operation is different from a difference between a level of a third voltage used in a first sensing operation and a level of a fourth voltage used in a second sensing operation in the second reading operation.

    摘要翻译： 一种操作具有多电平单元阵列的交叉点存储器件的方法包括通过多个感测操作执行关于多电平单元的第一读取操作，以确定第一状态并执行关于第二读取操作的第二读取操作 所述多电平单元通过多个感测操作来确定第二状态。 在第一读取操作中使用的第一电压的电平与在第一读取操作中的第二感测操作中使用的第二电压的电平之间的差异不同于在第一感测中使用的第三电压的电平之间的差 操作和在第二读取操作中的第二感测操作中使用的第四电压的电平。

    RESISTIVE MEMORY DEVICE INCLUDING COLUMN DECODER AND OPERATING METHOD THEREOF
    5.
    发明申请
    RESISTIVE MEMORY DEVICE INCLUDING COLUMN DECODER AND OPERATING METHOD THEREOF 有权
    包括柱解码器的电阻式存储器及其操作方法

    公开(公告)号：US20160172028A1

    公开(公告)日：2016-06-16

    申请号：US14820197

    申请日：2015-08-06

    申请人： HYUN-KOOK PARK ,  CHI-WEON YOON ,  YEONG-TAEK LEE

    发明人： HYUN-KOOK PARK ,  CHI-WEON YOON ,  YEONG-TAEK LEE

    IPC分类号： G11C13/00 ,  G11C11/16

    CPC分类号： G11C13/0026 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/2255 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0069

    摘要： A resistive memory device includes a column decoder having a first switch unit, including at least one pair of switches arranged in correspondence to each of a plurality of signal lines, and a second switch unit including a pair of switches arranged in correspondence to the at least one pair of switches of the first switch unit. A first pair of switches of the first switch unit includes a first switch and a second switch that are of the same type, and a second pair of switches of the second switch unit includes a third switch and a fourth switch that are connected to the first pair of switches. A selection voltage is provided to the first signal line by passing through the first switch, and an inhibit voltage is provided to the first signal line by selectively passing through the first switch or the second switch.

    摘要翻译： 一种电阻式存储装置，包括具有第一开关单元的列解码器，该第一开关单元包括对应于多条信号线中的每一条布置的至少一对开关，以及第二开关单元，该第二开关单元包括对应于至少 第一开关单元的一对开关。 第一开关单元的第一对开关包括相同类型的第一开关和第二开关，第二开关单元的第二对开关包括第三开关和第四开关，第三开关和第四开关连接到第一开关 一对开关 通过穿过第一开关将选择电压提供给第一信号线，并且通过选择性地通过第一开关或第二开关将第一信号线提供禁止电压。

    THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
    7.
    发明申请
    THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE 有权
    三维半导体存储器件

    公开(公告)号：US20130051146A1

    公开(公告)日：2013-02-28

    申请号：US13584847

    申请日：2012-08-14

    申请人： JUNG-YUN YUN ,  JONG-YEOL PARK ,  CHI-WEON YOON ,  SUNG-WON YUN ,  SU-YONG KIM

    发明人： JUNG-YUN YUN ,  JONG-YEOL PARK ,  CHI-WEON YOON ,  SUNG-WON YUN ,  SU-YONG KIM

    IPC分类号： G11C16/26 ,  G11C16/04

    CPC分类号： H01L27/11582 ,  G11C16/0483

    摘要： A three-dimensional (3D) semiconductor memory device comprises memory cell strings each comprising at least one selection transistor and at least one memory cell, a first pass transistor group sharing a first well region and comprising a first selection line pass transistor connected to the selection transistor and a first world line pass transistor connected to the memory cell, a second pass transistor group sharing a second well region and comprising a second selection line pass transistor connected to the selection transistor, and a controller that controls the first pass transistor group and the second pass transistor group. The controller applies selected voltages to the first and second well regions during read operation.

    摘要翻译： 三维（3D）半导体存储器件包括存储单元串，每个存储单元串包括至少一个选择晶体管和至少一个存储单元，共享第一阱区的第一级晶体管组，并且包括连接到选择的第一选择线传输晶体管 晶体管和连接到存储单元的第一世界线传输晶体管，第二传输晶体管组共享第二阱区并且包括连接到选择晶体管的第二选择线传输晶体管，以及控制器，其控制第一传输晶体管组和 二级晶体管组。 控制器在读取操作期间将选择的电压施加到第一和第二阱区。