公开(公告)号：US20030139116A1

公开(公告)日：2003-07-24

申请号：US10051241

申请日：2002-01-18

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin J. Moeggenborg ,  Isaac K. Cherian ,  Vlasta Brusic

IPC: B24B007/22

CPC classification number: C09G1/02

Abstract: The invention provides a chemical-mechanical polishing system and method comprising a liquid carrier, a polishing pad and/or an abrasive, and at least one amine-containing polymer, wherein the amine-containing polymer has about 5 or more sequential atoms separating the nitrogen atoms of the amino functional groups or is a block copolymer with at least one polymer block comprising one or more amine functional groups and at least one polymer block not comprising any amine functional groups.

Abstract translation: 本发明提供了一种化学机械抛光系统和方法，其包括液体载体，抛光垫和/或研磨剂和至少一种含胺聚合物，其中含胺聚合物具有约5个或更多个顺序的原子分离氮 是具有至少一个包含一个或多个胺官能团的聚合物嵌段和至少一个不包含任何胺官能团的聚合物嵌段的嵌段共聚物。

公开(公告)号：US20030181142A1

公开(公告)日：2003-09-25

申请号：US10376172

申请日：2003-02-27

Applicant: Cabot Microelectronics Corporation

Inventor： Francesco De Rege Thesauro ,  Vlasta Brusic ,  Benjamin P. Bayer

IPC: B24B007/22

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/04 ,  C23F3/06 ,  H01L21/3212 ,  H01L28/65

Abstract: The invention provides a method of polishing a substrate comprising a noble metal comprising (i) contacting the substrate with a CMP system and (ii) abrading at least a portion of the substrate to polish the substrate. The CMP system comprises an abrasive and/or polishing pad, a liquid carrier, and a sulfonic acid compound.

Abstract translation: 本发明提供一种抛光包括贵金属的基材的方法，包括（i）使基板与CMP系统接触，以及（ii）研磨基材的至少一部分以抛光基材。 CMP系统包括磨料和/或抛光垫，液体载体和磺酸化合物。

公开(公告)号：US20040266196A1

公开(公告)日：2004-12-30

申请号：US10610407

申请日：2003-06-30

Applicant: Cabot Microelectronics Corporation

Inventor： Francesco De Rege Thesauro ,  Vlasta Brusic ,  Benjamin P. Bayer

IPC: H01L021/311

CPC classification number: C09G1/02 ,  C23F3/00 ,  H01L21/3212

Abstract: The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen. The invention also provides a method of polishing a substrate comprising a noble metal layer and a second layer using the aforementioned polishing system that further comprises a stopping compound.

Abstract translation: 本发明提供了一种抛光衬底的方法，其包括（i）使包含贵金属层的衬底与化学机械抛光系统接触，所述化学机械抛光系统包括（a）抛光组分，（b）氧化剂和（c）液体载体 ，和（ii）研磨贵金属层的至少一部分以抛光基底。 抛光组分选自研磨剂，抛光垫或其组合，氧化剂选自溴酸盐，溴酸盐，次溴酸盐，氯酸盐，亚氯酸盐，次氯酸盐，高氯酸盐，碘酸盐，次碘酸盐 ，高碘酸酯，过氧乙酸，有机卤代氧化合物，其盐，及其组合。 化学机械抛光系统的pH值约为9或更低，氧化剂不产生大量的元素卤素。 本发明还提供了一种使用上述抛光系统抛光包含贵金属层和第二层的衬底的方法，所述抛光系统还包括停止化合物。