3D-STACKED BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MAKING THE SAME
    1.
    发明申请
    3D-STACKED BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MAKING THE SAME 有权
    3D堆叠式背光照明图像传感器及其制作方法

    公开(公告)号:US20140077057A1

    公开(公告)日:2014-03-20

    申请号:US13616850

    申请日:2012-09-14

    IPC分类号: H01L27/146 H01L31/18

    摘要: A stacked image sensor and method for making the same are provided. The stacked image sensor includes an upper chip with a pixel array thereon. The second chip includes a plurality of column circuits and row circuits associated with the columns and rows of the pixel array and disposed in respective column circuit and row circuit regions that are arranged in multiple groups. Inter-chip bonding pads are formed on each of the chips. The inter-chip bonding pads on the second chip are arranged linearly and are contained within the column circuit regions and row circuit regions in one embodiment. In other embodiments, the inter-chip bonding pads are staggered with respect to each other. In some embodiments, the rows and columns of the pixel array include multiple signal lines and the corresponding column circuit regions and row circuit regions also include multiple inter-chip bonding pads.

    摘要翻译: 提供一种堆叠式图像传感器及其制造方法。 堆叠图像传感器包括其上具有像素阵列的上部芯片。 第二芯片包括与像素阵列的列和行相关联的多个列电路和行电路,并且被布置在多个组中的各个列电路和行电路区域中。 在每个芯片上形成芯片间接合焊盘。 在一个实施例中,第二芯片上的芯片间接合焊盘被线性布置并且被包含在列电路区域和行电路区域内。 在其他实施例中,芯片间接合焊盘相对于彼此交错。 在一些实施例中,像素阵列的行和列包括多个信号线,并且相应的列电路区域和行电路区域还包括多个芯片间接合焊盘。

    CAPACTIVE LOAD PLL WITH CALIBRATION LOOP
    2.
    发明申请
    CAPACTIVE LOAD PLL WITH CALIBRATION LOOP 有权
    具有校准环路的电容负载PLL

    公开(公告)号:US20130342247A1

    公开(公告)日:2013-12-26

    申请号:US13530136

    申请日:2012-06-22

    IPC分类号: H03L7/08

    摘要: A circuit includes a capacitive-load voltage controlled oscillator having an input configured to receive a first input signal and an output configured to output an oscillating output signal. A calibration circuit is coupled to the voltage controlled oscillator and is configured to output one or more control signals to the capacitive-load voltage controlled oscillator for adjusting a frequency of the oscillating output signal. The calibration circuit is configured to output the one or more control signals in response to a comparison of an input voltage to at least one reference voltage.

    摘要翻译: 电路包括电容负载压控振荡器,其具有被配置为接收第一输入信号的输入和被配置为输出振荡输出信号的输出。 校准电路耦合到压控振荡器,并被配置为将一个或多个控制信号输出到电容负载压控振荡器,用于调整振荡输出信号的频率。 校准电路被配置为响应于输入电压与至少一个参考电压的比较而输出一个或多个控制信号。

    CLOCK AND DATA RECOVERY USING LC VOLTAGE CONTROLLED OSCILLATOR AND DELAY LOCKED LOOP
    3.
    发明申请
    CLOCK AND DATA RECOVERY USING LC VOLTAGE CONTROLLED OSCILLATOR AND DELAY LOCKED LOOP 有权
    使用LC电压控制振荡器和延迟锁定环路的时钟和数据恢复

    公开(公告)号:US20120230457A1

    公开(公告)日:2012-09-13

    申请号:US13045788

    申请日:2011-03-11

    IPC分类号: H04L7/00

    摘要: A clock and data recovery (CDR) circuit includes an inductor-capacitor voltage controlled oscillator (LCVCO) configured to generate a clock signal with a clock frequency. A delay locked loop (DLL) is configured to receive the clock signal from the LCVCO and generate multiple clock phases. A charge pump is configured to control the LCVCO. A phase detector is configured to receive a data input and the multiple clock phases from the DLL, and to control the first charge pump in order to align a data edge of the data input and the multiple clock phases.

    摘要翻译: 时钟和数据恢复(CDR)电路包括被配置为产生具有时钟频率的时钟信号的电感器 - 电容器压控振荡器(LCVCO)。 延迟锁定环(DLL)被配置为从LCVCO接收时钟信号并生成多个时钟相位。 电荷泵配置为控制LCVCO。 相位检测器被配置为从DLL接收数据输入和多个时钟相位,并且控制第一电荷泵以便对准数据输入和多个时钟相位的数据沿。

    MILLIMETER-WAVE WIDEBAND FREQUENCY DOUBLER
    4.
    发明申请
    MILLIMETER-WAVE WIDEBAND FREQUENCY DOUBLER 有权
    MILLIMETER-WAVE WIDEBAND频率双打

    公开(公告)号:US20120146747A1

    公开(公告)日:2012-06-14

    申请号:US12967160

    申请日:2010-12-14

    IPC分类号: H03B19/00

    CPC分类号: H03B19/00

    摘要: A millimeter-wave wideband frequency doubler stage for use in a distributed frequency doubler includes: a differential input pair of transistors, each transistor having respective gate, drain and source terminals, wherein the source terminals are coupled together to a first power supply node and the drain terminals are coupled together at a first node to a second power supply node; first and second pairs of bandpass gate lines coupled to the gate terminals of the transistors; and a pair of bandpass drain lines coupled to the drain terminals of the transistors.

    摘要翻译: 用于分布式倍频器的毫米波宽带倍频器级包括:差分输入对晶体管,每个晶体管具有相应的栅极,漏极和源极端子,其中源极端子耦合到第一电源节点,并且 漏极端子在第一节点耦合到第二电源节点; 耦合到晶体管的栅极端子的第一和第二对带通栅极线; 以及耦合到晶体管的漏极端子的一对带通漏极线。

    LEVEL SHIFTERS FOR IO INTERFACES
    5.
    发明申请
    LEVEL SHIFTERS FOR IO INTERFACES 有权
    IO接口的水平移位器

    公开(公告)号:US20120044008A1

    公开(公告)日:2012-02-23

    申请号:US12859456

    申请日:2010-08-19

    IPC分类号: H03L5/00

    摘要: A level shifter includes an input node, an output node, a pull-up transistor, a pull-down transistor, and at least one diode-connected device coupled between the pull-up transistor and the pull-down transistor. The level shifter is arranged to be coupled to a high power supply voltage, to receive an input signal having a first voltage level at the input node, and to supply an output signal having a second voltage level at the output node. The high power supply voltage is higher than the first voltage level. The at least one diode-connected device allows the output signal to be pulled up to about a first diode voltage drop below the high power supply voltage and/or to be pulled down to about a second diode voltage drop above ground. The first diode voltage drop and the second diode voltage drop are from the at least one diode-connected device.

    摘要翻译: 电平移位器包括输入节点,输出节点,上拉晶体管,下拉晶体管以及耦合在上拉晶体管和下拉晶体管之间的至少一个二极管连接器件。 电平移位器被布置为耦合到高电源电压,以在输入节点处接收具有第一电压电平的输入信号,并且在输出节点处提供具有第二电压电平的输出信号。 高电源电压高于第一电压电平。 所述至少一个二极管连接的装置允许输出信号被上拉到大约低于高电源电压的第一二极管电压降和/或被下拉到大约地面上的第二二极管电压降。 第一二极管电压降和第二二极管压降来自至少一个二极管连接的器件。

    CASCODE CMOS STRUCTURE
    6.
    发明申请
    CASCODE CMOS STRUCTURE 有权
    CASCODE CMOS结构

    公开(公告)号:US20110215420A1

    公开(公告)日:2011-09-08

    申请号:US12766972

    申请日:2010-04-26

    IPC分类号: H01L27/088 G06F17/50

    摘要: A MOS device includes an active area having first and second contacts. First and second gates are disposed between the first and second contacts. The first gate is disposed adjacent to the first contact and has a third contact. The second gate is disposed adjacent to the second contact and has a fourth contact coupled to the third contact. A transistor defined by the active area and the first gate has a first threshold voltage, and a transistor defined by the active area and the second gate has a second threshold voltage.

    摘要翻译: MOS器件包括具有第一和第二触点的有源区。 第一和第二栅极设置在第一和第二触点之间。 第一门被设置成与第一接触相邻并且具有第三接触。 第二栅极被设置成与第二触点相邻并且具有耦合到第三触点的第四触点。 由有源区和第一栅极限定的晶体管具有第一阈值电压,并且由有源区和第二栅极限定的晶体管具有第二阈值电压。

    SEMICONDUCTOR DEVICE DESIGN SYSTEM AND METHOD OF USING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICE DESIGN SYSTEM AND METHOD OF USING THE SAME 有权
    半导体器件设计系统及其使用方法

    公开(公告)号:US20130311957A1

    公开(公告)日:2013-11-21

    申请号:US13475853

    申请日:2012-05-18

    IPC分类号: G06F17/50

    摘要: A circuit design system includes a schematic design tool configured to generate schematic information and pre-coloring information for a circuit. The circuit design system also includes a netlist file configured to store the schematic information and the pre-coloring information on a non-transitory computer readable medium and an extraction tool configured to extract the pre-coloring information from the netlist file. A layout design tool, included in the circuit design system, is configured to design at least one mask based on the schematic information and the pre-coloring information. The circuit design system further includes a layout versus schematic comparison tool configured to compare the at least one mask to the schematic information and the pre-coloring information.

    摘要翻译: 电路设计系统包括被配置为产生电路的示意图信息和预着色信息的示意性设计工具。 电路设计系统还包括被配置为在非暂时计算机可读介质上存储原理图信息和预着色信息的网表文件,以及被配置为从网表文件中提取预着色信息的提取工具。 包括在电路设计系统中的布局设计工具被配置为基于原理图信息和预着色信息设计至少一个掩模。 电路设计系统还包括布局与示意性比较工具,其被配置为将至少一个掩模与示意图信息和预着色信息进行比较。

    SYSTEMS AND METHODS OF DESIGNING INTEGRATED CIRCUITS
    8.
    发明申请
    SYSTEMS AND METHODS OF DESIGNING INTEGRATED CIRCUITS 有权
    设计集成电路的系统与方法

    公开(公告)号:US20120266126A1

    公开(公告)日:2012-10-18

    申请号:US13084748

    申请日:2011-04-12

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5072

    摘要: A method of designing an integrated circuit includes providing a cell library including a first and second cell structures. The cell structures each include a dummy gate electrode disposed on a boundary. An edge gate electrode is disposed adjacent to the dummy gate electrode. An oxide definition (OD) region has an edge disposed between the edge gate electrode and the dummy gate electrode. The method includes determining if the cell structures are to be abutted with each other. If so, the method includes abutting the cell structures. If not so, the method includes increasing areas of portions of the OD regions between the edge gate electrodes and the dummy gate electrodes.

    摘要翻译: 设计集成电路的方法包括提供包括第一和第二单元结构的单元库。 电池结构各自包括设置在边界上的虚拟栅电极。 边缘栅电极被设置成与虚拟栅电极相邻。 氧化物定义(OD)区域具有设置在边缘栅电极和伪栅电极之间的边缘。 该方法包括确定单元结构是否彼此邻接。 如果是,则该方法包括邻接单元结构。 如果不是这样,则该方法包括增加边缘栅极电极和虚拟栅电极之间的OD区域的部分区域。

    LOW MINIMUM POWER SUPPLY VOLTAGE LEVEL SHIFTER
    10.
    发明申请
    LOW MINIMUM POWER SUPPLY VOLTAGE LEVEL SHIFTER 有权
    低最低电源电压水平变换器

    公开(公告)号:US20120019302A1

    公开(公告)日:2012-01-26

    申请号:US12843479

    申请日:2010-07-26

    IPC分类号: H03L5/00

    CPC分类号: H03K19/018521

    摘要: A level shifter includes one PMOS and two NMOS transistors. A source of the first NMOS transistor is coupled to a low power supply voltage. An input signal is coupled to a gate of the first NMOS transistor and a source of the second NMOS transistor. The input signal has a voltage level up to a first power supply voltage. A source of the PMOS transistor is coupled to a second power supply voltage, higher than the first power supply voltage. An output signal is coupled between the PMOS and the first NMOS transistors. The first NMOS transistor is arranged to pull down the output signal when the input signal is a logical 1, and the second NMOS transistor is arranged to enable the PMOS transistor to pull up the output signal to a logical 1 at the second power supply voltage when the input signal is a logical 0.

    摘要翻译: 电平移位器包括一个PMOS和两个NMOS晶体管。 第一NMOS晶体管的源极耦合到低电源电压。 输入信号耦合到第一NMOS晶体管的栅极和第二NMOS晶体管的源极。 输入信号具有高达第一电源电压的电压电平。 PMOS晶体管的源极耦合到高于第一电源电压的第二电源电压。 输出信号耦合在PMOS和第一NMOS晶体管之间。 第一NMOS晶体管被布置为当输入信号为逻辑1时下拉输出信号,并且第二NMOS晶体管被布置为使得PMOS晶体管能够以第二电源电压将输出信号上拉至逻辑1, 输入信号为逻辑0。