公开(公告)号：US4882008A

公开(公告)日：1989-11-21

申请号：US216884

申请日：1988-07-08

申请人： Cesar M. Garza ,  Monte A. Douglas ,  Lee M. Loewenstein ,  Cecil J. Davis

发明人： Cesar M. Garza ,  Monte A. Douglas ,  Lee M. Loewenstein ,  Cecil J. Davis

IPC分类号： G03F7/26 ,  H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/265

摘要： A process for developing a photolithographic pattern on the surface of an exposed workpiece in a process chamber; disposing the workpiece in a process chamber; heating the workpiece and introducing a silylating agent to the process chamber and to a face of the workpiece to be processed; generating activated species from a source of oxygen; and introducing the activated species to the face of the workpiece.

摘要翻译： 一种用于在处理室中暴露的工件的表面上显影光刻图案的工艺; 将工件放置在处理室中; 加热工件并将甲硅烷基化剂引入处理室和待加工的工件的表面; 从氧源产生活化物质; 并将活化物质引入到工件的表面。

公开(公告)号：US4891303A

公开(公告)日：1990-01-02

申请号：US199087

申请日：1988-05-26

申请人： Cesar M. Garza ,  Monte A. Douglas ,  Roland Johnson

发明人： Cesar M. Garza ,  Monte A. Douglas ,  Roland Johnson

IPC分类号： G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/0754 ,  G03F7/094 ,  H01L21/0274

摘要： A method for patterning an integrated circuit workpiece (10) includes forming a first layer (16) of organic material on the workpiece surface to a depth sufficient to allow a substantially planar outer surface (36) thereof. A second, polysilane-based resist layer (22) is spin-deposited on the first layer (16). A third resolution layer (24) is deposited on the second layer (22). The resolution layer (24) is selectively exposed and developed using standard techniques. The pattern in the resolution layer (24) is transferred to the polysilane layer (22) by either using exposure to deep ultraviolet or by a fluorine-base RIE etch. This is followed by an oxygen-based RIE etch to transfer the pattern to the surface (18) of the workpiece (10).

摘要翻译： 图案化集成电路工件（10）的方法包括在工件表面上形成有效材料的第一层（16）至足以允许其基本平坦的外表面（36）的深度。 在第一层（16）上旋转沉积第二个聚硅烷基抗蚀剂层（22）。 第三分辨率层（24）沉积在第二层（22）上。 使用标准技术选择性地曝光和显影分辨率层（24）。 通过使用暴露于深紫外线或通过氟基RIE蚀刻将分辨率层（24）中的图案转移到聚硅烷层（22）。 之后是氧基RIE蚀刻，以将图案转移到工件（10）的表面（18）。

公开(公告)号：US4915777A

公开(公告)日：1990-04-10

申请号：US318035

申请日：1989-03-02

申请人： Rhett B. Jucha ,  Monte A. Douglas ,  Cecil J. Davis

发明人： Rhett B. Jucha ,  Monte A. Douglas ,  Cecil J. Davis

IPC分类号： C23C16/517 ,  C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3213 ,  H01L21/677

CPC分类号： H01L21/67748 ,  C23C16/517 ,  C23F4/00 ,  H01J37/32339 ,  H01J37/32743 ,  H01J37/32788 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67751 ,  H01J2237/022 ,  H01J2237/184 ,  H01J2237/3345

摘要： A process wherein a thin film of tungsten is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes an etchant and a carbon containing gas. This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.

摘要翻译： 一种其中通过使用包括蚀刻剂和含碳气体的进料气体混合物在等离子体轰击条件下各向异性地蚀刻钨的薄膜的方法。 该化学提供各向异性高速氟蚀刻，对光致抗蚀剂具有良好的选择性。

公开(公告)号：US5695569A

公开(公告)日：1997-12-09

申请号：US192204

申请日：1994-02-04

申请人： Monte A. Douglas

发明人： Monte A. Douglas

IPC分类号： C23F4/00 ,  H01L21/00 ,  H01L21/306 ,  B08B3/04 ,  B08B7/04

CPC分类号： H01L21/02052 ,  B08B7/0057 ,  C23F4/00 ,  H01L21/67057

摘要： Generally, and in one form of the invention, a method is presented for the photo-stimulated removal of reacted metal contamination 16 from a surface 11, comprising the steps of: covering the surface with a liquid ambient 14; exciting the reacted metal contamination 16 and/or the liquid ambient 14 by photo-stimulation sufficiently to allow reaction of the reacted metal contaminantion 16 with the liquid ambient 14 to form metal products; and removing the liquid ambient 14 and the metal products from the surface 11. Other methods are also disclosed.

摘要翻译： 通常，在本发明的一种形式中，提出了一种从表面11光激发除去反应的金属污染物16的方法，包括以下步骤：用液体环境14覆盖表面; 通过足够的光刺激激发反应的金属污染物16和/或液体环境14，以使反应的金属污染物16与液体环境14反应形成金属产物; 并从表面11除去液体环境14和金属产品。还公开了其它方法。

公开(公告)号：US5565179A

公开(公告)日：1996-10-15

申请号：US473457

申请日：1995-06-07

申请人： Monte A. Douglas

发明人： Monte A. Douglas

IPC分类号： B08B6/00 ,  H01L21/00 ,  B01J19/08 ,  B01J19/12 ,  C23C14/22 ,  C23C14/28

CPC分类号： H01L21/67028 ,  B08B6/00 ,  Y10S422/906 ,  Y10T436/25375

摘要： An electrostatic decontamination method and decontamination device (10) is disclosed for decontaminating the surface of a semiconductor substrate. The decontamination device (10) includes particle ionizing device (24) that charges contaminating particles (26) on the surface of semiconductor substrate (16) thereby creating ionized particles. Decontamination device (10) also includes substrate biasing device (12) for creating a charge accumulation layer (14) at the top of semiconductor substrate (16) so that the charge accumulation layer (14) has the same charge sign as the ionized particles. In addition, the invention analytically characterizes particles using contaminating particle isolator (44) which contains a particle ionizing device (24) that charges contaminating particles (26) on the surface of semiconductor substrate (16) thereby creating ionized particles. Contaminating particle isolator (44) includes substrate biasing device (12) operable to create charge accumulation layer (14) at the top of semiconductor substrate (16) so that the charge accumulation layer (14) has the same charge sign as the ionized particles. Contaminating particle isolator (44) also includes particle collector (46) that collects the ionized particles. This permits characterizing the particles to determine their chemical composition.

公开(公告)号：US5000820A

公开(公告)日：1991-03-19

申请号：US453521

申请日：1989-12-20

申请人： Monte A. Douglas

发明人： Monte A. Douglas

IPC分类号： H01L21/465

CPC分类号： H01L21/465

摘要： A workpiece (W) is placed within a reaction chamber (12). The chamber (12) is evacuated (18) to a relatively low pressure such as 10 torr. An organic or nitrogen-based free radical precursor compound (36) is introduced into the reactor (12). A volume of the chamber (12) adjacent to the workpiece (W) is illuminated (28) with energy made up of one or more wavelengths in the range of about 200 to about 1300 nanometers such that an exposed surface (23) of the layer is illuminated (28). The free radical precursor compound is photodissociated in response to the illumination. Resulting free radicals are reacted with the exposed surface (23) of the workpiece (W) to create volatile compounds, which are removed from the chamber through a vacuum source (18).

摘要翻译： 工件（W）被放置在反应室（12）内。 将室（12）抽空（18）至相当低的压力，例如10托。 将有机或氮基自由基前体化合物（36）引入反应器（12）中。 邻近工件（W）的腔室（12）的体积用约200至约1300纳米范围内的一个或多个波长的能量照射（28），使得层的暴露表面（23） 被照亮（28）。 自由基前体化合物响应于照明而光分解。 所产生的自由基与工件（W）的暴露表面（23）反应以产生挥发性化合物，其通过真空源（18）从室除去。

公开(公告)号：US4758305A

公开(公告)日：1988-07-19

申请号：US838965

申请日：1986-03-11

申请人： Thomas D. Bonifield ,  Vic B. Marriott ,  Rhett B. Jucha ,  Monte A. Douglas

发明人： Thomas D. Bonifield ,  Vic B. Marriott ,  Rhett B. Jucha ,  Monte A. Douglas

IPC分类号： H01L21/28 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/088 ,  B44C1/22 ,  B29C37/00 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/31116 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76804 ,  Y10S438/948 ,  Y10S438/952

摘要： A method for patterning small-geometry contacts with sloped sidewalls in integrated circuit fabrication. A multilayer resist process is used, and the spacer layer is undercut by overexposure and overdevelopment at the pattern transfer stage. This provides a cantilever etch mask structure, without the need to use any hardmask layers.

摘要翻译： 在集成电路制造中用于图形具有倾斜侧壁的小几何接触的方法。 使用多层抗蚀剂工艺，并且间隔层在图案转移阶段被过度曝光和过度发展所削弱。 这提供了悬臂蚀刻掩模结构，而不需要使用任何硬掩模层。

公开(公告)号：US4702795A

公开(公告)日：1987-10-27

申请号：US730701

申请日：1985-05-03

申请人： Monte A. Douglas

发明人： Monte A. Douglas

IPC分类号： H01L27/10 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/30655 ,  H01L21/3065 ,  H01L21/3085 ,  Y10S148/05

摘要： A plasma dry etch process for etching deep trenches in single crystal silicon material with controlled wall profile, for trench capacitors or trench isolation structures. HCl is used as an etchant under RIE conditions with a SiO2 hard mask. The SiO2 hard mask is forward sputtered during the course of the Si etch so as to slowly deposit SiOx (x

摘要翻译： 用于蚀刻具有受控壁分布的单晶硅材料的深沟槽的等离子体干蚀刻工艺，用于沟槽电容器或沟槽隔离结构。 在RIE条件下，用SiO2硬掩模将HCl用作蚀刻剂。 SiO 2硬掩模在Si蚀刻过程中向前溅射，以便在硅沟槽的侧壁上缓慢沉积SiO x（x <2）。 由于侧壁沉积物在靠近侧壁的沟槽底部阴影蚀刻，因此这种逐渐积累的效果是产生正倾斜的沟槽侧壁，而不会“沟槽”沟槽的底部，并且没有线宽损耗。 该方法避免了掩模底切的现有技术问题，其在随后的再填充处理期间产生空隙，并且在沟槽的底部开槽，这对薄的电容器电介质完整性是非常有害的。

公开(公告)号：US4654112A

公开(公告)日：1987-03-31

申请号：US655004

申请日：1984-09-26

申请人： Monte A. Douglas ,  Thomas D. Bonifield

发明人： Monte A. Douglas ,  Thomas D. Bonifield

IPC分类号： C03C15/00 ,  G03F7/36 ,  H01L21/311 ,  H01L21/768 ,  B44C1/22 ,  C03C25/06

CPC分类号： C03C15/00 ,  G03F7/36 ,  H01L21/31116 ,  H01L21/76804 ,  Y10S438/945

摘要： A new process for plasma etching silicon oxides in integrated circuit structures. A chemistry comprising both oxygen and nitrogen trifluoride is used, with oxygen the dominant component. This provides excellent selectivity to silicon. This etch chemistry also erodes photoresist rapidly, so that it is typically used in combination with a hard-masking process. One particular application of this invention is in a cantilever-etch-mask contact profiling process.

摘要翻译： 集成电路结构中等离子体蚀刻氧化硅的新工艺。 使用包含氧和三氟化氮的化学，其中氧是主要成分。 这为硅提供了极好的选择性。 该蚀刻化学品也快速地侵蚀光致抗蚀剂，因此通常与硬掩模工艺结合使用。 本发明的一个具体应用是悬臂蚀刻掩模接触分析过程。

公开(公告)号：US6024801A

公开(公告)日：2000-02-15

申请号：US761579

申请日：1996-12-09

申请人： Robert M. Wallace ,  Monte A. Douglas

发明人： Robert M. Wallace ,  Monte A. Douglas

IPC分类号： B08B7/00 ,  B81B3/00 ,  B81C1/00 ,  G02B26/08 ,  H01L21/304 ,  B08B3/00

CPC分类号： B81C1/0096 ,  B08B7/00 ,  B08B7/0021 ,  B81B3/0005 ,  B81C1/00857 ,  G02B26/0841 ,  B81C2201/112 ,  B81C2201/117

摘要： A method of cleaning and treating a device, including those of the micromechanical (10) and semiconductor type. The surface of a device, such as the landing electrode (22) of a digital micromirror device (10), is first cleaned with a supercritical fluid (SCF) in a chamber (50) to remove soluble chemical compounds, and then maintained in the SCF chamber until and during the subsequent passivation step. Passivants including PFDA and PFPE are suitable for the present invention. By maintaining the device in the SCF chamber, and without exposing the device to, for instance, the ambient of a clean room, organic and inorganic contaminants cannot be deposited upon the cleaned surface prior to the passivation step. The present invention derives technical advantages by providing an improved passivated surface that is suited to extend the useful operation life of devices, including those of the micromechanical type, reducing stiction forces between contacting elements such as a mirror and its landing electrode. The present invention is also suitable for cleaning and passivating other surfaces including a surface of semiconductor wafers, and the surface of a hard disk memory drive.

摘要翻译： 一种清洁和处理包括微机械（10）和半导体类型的装置的方法。 首先在室（50）中用超临界流体（SCF）清洁诸如数字微镜装置（10）的着陆电极（22）的装置的表面以除去可溶性化合物，然后保持在 SCF室直到和之后的钝化步骤。 包括PFDA和PFPE的钝化剂适用于本发明。 通过将装置保持在SCF室中，并且在不将装置暴露于例如洁净室的环境的情况下，在钝化步骤之前，有机和无机污染物不能沉积在清洁的表面上。 本发明通过提供一种改进的钝化表面来提供技术优点，所述钝化表面适于延长包括微机械型的装置的有用使用寿命，从而降低诸如反射镜和其着陆电极的接触元件之间的静摩擦力。 本发明也适用于清洁和钝化包括半导体晶片的表面的其它表面以及硬盘存储器驱动器的表面。