公开(公告)号：US08562442B2

公开(公告)日：2013-10-22

申请号：US13153247

申请日：2011-06-03

申请人： Chad M. Stafford ,  Justin Cooper ,  Kevin Lyon ,  Nicholas Glassman ,  Steven Mayer

发明人： Chad M. Stafford ,  Justin Cooper ,  Kevin Lyon ,  Nicholas Glassman ,  Steven Mayer

IPC分类号： G06F17/00

CPC分类号： A63F13/87 ,  A63F13/12 ,  A63F13/332 ,  A63F13/352 ,  A63F13/537 ,  A63F13/61 ,  A63F13/71 ,  A63F2300/204 ,  A63F2300/406 ,  A63F2300/513 ,  A63F2300/538 ,  A63F2300/5506 ,  A63F2300/5566 ,  A63F2300/5573 ,  A63F2300/5593 ,  H04L67/38 ,  H04W4/023 ,  H04W4/08

摘要： Systems and techniques relating to interactive gaming are described. A described system includes one or more site servers providing game instances to one or more devices in communication with the one or more site servers via a wired network, a wireless network, or both. The system includes a server system in communication with the one or more site servers; and one or more wireless mobile devices in communication with the server system. The server system can be configured to provide information about one or more of the gaming instances at one or more sites to the one or more mobile devices; receive, from the one or more mobile devices, an indication of a selected gaming instance of the gaming instances; relay gaming information between the one or more site servers and the one or more mobile devices; and provide gaming content and one or more gaming functions to the site servers.

摘要翻译： 描述与交互式游戏相关的系统和技术。 所描述的系统包括一个或多个站点服务器，其经由有线网络，无线网络或两者向一个或多个站点服务器通信的一个或多个设备提供游戏实例。 该系统包括与一个或多个站点服务器通信的服务器系统; 以及与服务器系统通信的一个或多个无线移动设备。 可以将服务器系统配置为向一个或多个移动设备提供关于一个或多个站点上的一个或多个游戏实例的信息; 从所述一个或多个移动设备接收所选择的游戏实例的游戏实例的指示; 在所述一个或多个站点服务器与所述一个或多个移动设备之间中继游戏信息; 并向站点服务器提供游戏内容和一个或多个游戏功能。

公开(公告)号：US08308931B2

公开(公告)日：2012-11-13

申请号：US12291356

申请日：2008-11-07

申请人： Jonathan Reid ,  Bryan Buckalew ,  Zhian He ,  Seyang Park ,  Seshasayee Varadarajan ,  Bryan Pennington ,  Thomas Ponnuswamy ,  Patrick Breling ,  Glenn Ibarreta ,  Steven Mayer

发明人： Jonathan Reid ,  Bryan Buckalew ,  Zhian He ,  Seyang Park ,  Seshasayee Varadarajan ,  Bryan Pennington ,  Thomas Ponnuswamy ,  Patrick Breling ,  Glenn Ibarreta ,  Steven Mayer

IPC分类号： C25D21/12 ,  C25D7/12 ,  C25D3/38

CPC分类号： C25D17/008 ,  C25D7/123 ,  C25D17/001 ,  C25D17/007 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76873

摘要： An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

摘要翻译： 用于在晶片表面上电镀一层金属的装置包括位于晶片附近（优选地在晶片表面的5mm内）的离子电离性离子渗透元件，其用于调节晶片表面处的离子电流，以及 第二阴极，被配置为使来自晶片表面的一部分电流转向。 在优选实施例中的离子电阻性离子渗透元件是由电阻材料制成的盘，其中形成有多个穿孔，使得穿孔在盘的主体内不形成连通通道。 所提供的配置有效地重新分布电镀系统中的离子电流，允许电镀均匀的金属层并减轻终端效应。

公开(公告)号：US08475636B2

公开(公告)日：2013-07-02

申请号：US12481503

申请日：2009-06-09

申请人： Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

发明人： Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

IPC分类号： C25D17/12 ,  C25D21/12

CPC分类号： C25D17/12 ,  C23C18/1601 ,  C25D5/02 ,  C25D17/001 ,  C25D17/002 ,  C25D17/007 ,  C25D17/008 ,  C25D21/12 ,  C25D21/14 ,  C25F3/30 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/6715 ,  H01L21/76873

摘要： An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

摘要翻译： 用于将金属层电镀到晶片表面上的装置包括位于晶片附近的离子电离离子可渗透元件和位于阳极和离子电离性可离子渗透元件之间的辅助阴极。 离子电阻性离子渗透元件用于调节晶片表面处的离子电流。 辅助阴极被配置成使来自阳极的电流分布成形。 所提供的配置有效地重新分布电镀系统中的离子电流，允许电镀均匀的金属层并减轻终端效应。

公开(公告)号：US08475644B2

公开(公告)日：2013-07-02

申请号：US12606030

申请日：2009-10-26

申请人： Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

发明人： Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

IPC分类号： C25D21/12 ,  C25D7/12 ,  C25D3/38

CPC分类号： C25D17/12 ,  C23C18/1601 ,  C25D5/02 ,  C25D17/001 ,  C25D17/002 ,  C25D17/007 ,  C25D17/008 ,  C25D21/12 ,  C25D21/14 ,  C25F3/30 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/6715 ,  H01L21/76873

摘要： An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

公开(公告)号：US20050282371A1

公开(公告)日：2005-12-22

申请号：US10693223

申请日：2003-10-24

申请人： Evan Patton ,  Theodore Cacouris ,  Eliot Broadbent ,  Steven Mayer

发明人： Evan Patton ,  Theodore Cacouris ,  Eliot Broadbent ,  Steven Mayer

IPC分类号： C25D3/38 ,  C25D5/10 ,  H01L21/00 ,  H01L21/288 ,  H01L21/44 ,  H01L21/677

CPC分类号： C25D17/001 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/67751 ,  H01L21/76877 ,  Y10T29/41

摘要： Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.

摘要翻译： 提供了顺序处理半导体晶片的方法和装置。 顺序过程采用多工位处理模块，其中特别包含的晶片工艺被分为子工艺，每个子工艺被优化用于增加晶圆到晶片的均匀性，结果质量和整个晶片生产量。 在一个示例中，铜电镀模块包括用于润湿，起始，种子层修复，填充，覆盖层，回收和冲洗的分离站。

公开(公告)号：US20100116672A1

公开(公告)日：2010-05-13

申请号：US12481503

申请日：2009-06-09

申请人： Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

发明人： Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

IPC分类号： C25D5/00 ,  C25D17/10 ,  C25D21/12

CPC分类号： C25D17/12 ,  C23C18/1601 ,  C25D5/02 ,  C25D17/001 ,  C25D17/002 ,  C25D17/007 ,  C25D17/008 ,  C25D21/12 ,  C25D21/14 ,  C25F3/30 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/6715 ,  H01L21/76873

摘要： An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

公开(公告)号：US08540857B1

公开(公告)日：2013-09-24

申请号：US13571199

申请日：2012-08-09

申请人： Steven Mayer ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Jingbin Feng

发明人： Steven Mayer ,  Shantinath Ghongadi ,  Kousik Ganesan ,  Zhian He ,  Jingbin Feng

IPC分类号： C25B9/00 ,  C25D17/00 ,  C25D7/12

CPC分类号： C25D17/001 ,  C25D5/08 ,  C25D17/002 ,  C25D17/008

摘要： An apparatus for electroplating a layer of metal onto a work piece surface includes a membrane separating the chamber of the apparatus into a catholyte chamber and an anolyte chamber. In the catholyte chamber is a catholyte manifold region that includes a catholyte manifold and at least one flow distribution tube. The catholyte manifold and at least one flow distribution tube serve to mix and direct catholyte flow in the catholyte chamber. The provided configuration effectively reduces failure and improves the operational ranges of the apparatus.

摘要翻译： 用于将金属层电镀到工件表面上的装置包括将装置的室分离成阴极电解液室和阳极电解液室的膜。 在阴极电解液室中是阴极电解液歧管区域，其包括阴极电解液歧管和至少一个流量分布管。 阴极电解液歧管和至少一个分流管用于混合和引导阴极电解液在阴极电解液室中的流动。 所提供的配置有效地减少故障并改善设备的操作范围。

公开(公告)号：US20100044236A1

公开(公告)日：2010-02-25

申请号：US12606030

申请日：2009-10-26

申请人： Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

发明人： Steven Mayer ,  Jingbin Feng ,  Zhian He ,  Jonathan Reid ,  Seshasayee Varadarajan

IPC分类号： C25D5/00 ,  C25D17/00 ,  C25D21/12

CPC分类号： C25D17/12 ,  C23C18/1601 ,  C25D5/02 ,  C25D17/001 ,  C25D17/002 ,  C25D17/007 ,  C25D17/008 ,  C25D21/12 ,  C25D21/14 ,  C25F3/30 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/6715 ,  H01L21/76873

摘要： An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

摘要翻译： 用于将金属层电镀到晶片表面上的装置包括位于晶片附近的离子电离离子可渗透元件和位于阳极和离子电离性可离子渗透元件之间的辅助阴极。 离子电阻性离子渗透元件用于调节晶片表面处的离子电流。 辅助阴极被配置成使来自阳极的电流分布成形。 所提供的配置有效地重新分布电镀系统中的离子电流，允许电镀均匀的金属层并减轻终端效应。

公开(公告)号：US20100032310A1

公开(公告)日：2010-02-11

申请号：US12291356

申请日：2008-11-07

申请人： Jonathan Reid ,  Bryan Buckalew ,  Zhian He ,  Seyang Park ,  Seshasayee Varadarajan ,  Bryan Pennington ,  Thomas Ponnuswamy ,  Patrick Breiling ,  Glenn Ibarreta ,  Steven Mayer

发明人： Jonathan Reid ,  Bryan Buckalew ,  Zhian He ,  Seyang Park ,  Seshasayee Varadarajan ,  Bryan Pennington ,  Thomas Ponnuswamy ,  Patrick Breiling ,  Glenn Ibarreta ,  Steven Mayer

IPC分类号： C25D3/00 ,  C25D17/00

CPC分类号： C25D17/008 ,  C25D7/123 ,  C25D17/001 ,  C25D17/007 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76873

摘要： An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

摘要翻译： 用于在晶片表面上电镀一层金属的装置包括位于晶片附近（优选地在晶片表面的5mm内）的离子电离性离子渗透元件，其用于调节晶片表面处的离子电流，以及 第二阴极，被配置为使来自晶片表面的一部分电流转向。 在优选实施例中的离子电阻性离子渗透元件是由电阻材料制成的盘，其中形成有多个穿孔，使得穿孔在盘的主体内不形成连通通道。 所提供的配置有效地重新分布电镀系统中的离子电流，允许电镀均匀的金属层并减轻终端效应。

公开(公告)号：US20070105377A1

公开(公告)日：2007-05-10

申请号：US11586394

申请日：2006-10-24

申请人： Daniel Koos ,  Steven Mayer ,  Heung Park ,  Timothy Cleary ,  Thomas Mountsier

发明人： Daniel Koos ,  Steven Mayer ,  Heung Park ,  Timothy Cleary ,  Thomas Mountsier

IPC分类号： B05D5/12 ,  B05D3/04 ,  B05D3/10 ,  B05D1/18 ,  C23C16/00 ,  C23F1/00 ,  H01L21/302

CPC分类号： C23F1/18 ,  C23C18/1608 ,  C23C18/1689 ,  C23C18/1692 ,  C23C18/1696 ,  C23C18/1893 ,  C23F1/34 ,  H01L21/288 ,  H01L21/32134 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

摘要翻译： 描述了用于选择性地蚀刻衬底的暴露的金属表面并在金属表面上形成导电覆盖层的蚀刻工艺。 在一些实施例中，蚀刻工艺涉及暴露的金属的氧化以形成随后从衬底的表面去除的金属氧化物。 暴露的金属可以通过使用含有氧化剂如过氧化物的溶液或通过使用氧化气体例如含氧或臭氧的氧化气体来氧化。 然后使用合适的金属氧化物蚀刻剂如甘氨酸除去所产生的金属氧化物。 氧化和蚀刻可能发生在相同的溶液中。 在其它实施例中，暴露的金属被直接蚀刻而不形成金属氧化物。 合适的直接金属蚀刻剂包括任何数量的酸性溶液。 该方法允许减少点蚀的受控氧化和/或蚀刻。 在金属区域被蚀刻并凹入基板表面之后，使用无电沉积形成在凹入的暴露的金属区域上的导电覆盖层。