公开(公告)号：US20060008938A1

公开(公告)日：2006-01-12

申请号：US11220670

申请日：2005-09-08

申请人： Chandra Mouli ,  Howard Rhodes ,  Richard Mauritzson

发明人： Chandra Mouli ,  Howard Rhodes ,  Richard Mauritzson

IPC分类号： H01L21/339

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/0352 ,  H01L31/101

摘要： A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.

公开(公告)号：US20080096302A1

公开(公告)日：2008-04-24

申请号：US11783040

申请日：2007-04-05

申请人： Chandra Mouli ,  Howard Rhodes ,  Richard Mauritzson

发明人： Chandra Mouli ,  Howard Rhodes ,  Richard Mauritzson

IPC分类号： H01L31/00

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/0352 ,  H01L31/101

摘要： A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface latter has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.

摘要翻译： 公开了具有第一导电类型的超浅高掺杂表面层和形成方法的钉扎光电二极管。 超浅高掺杂表面层的厚度为约100埃至约500埃，掺杂剂浓度约5×10 17原子/ cm 3至约1×10 3原子/ SUP> 19个/ cm 3原子/ cm 3。 超浅高掺杂表面层通过将离子从掺杂层扩散到衬底中或通过等离子体掺杂工艺形成。 超浅钉扎层与第二导电类型的电荷收集区域接触。

公开(公告)号：US07732247B2

公开(公告)日：2010-06-08

申请号：US12208920

申请日：2008-09-11

申请人： Chandra Mouli ,  Howard Rhodes

发明人： Chandra Mouli ,  Howard Rhodes

IPC分类号： H01L21/00

CPC分类号： H01L27/1463 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/14601

摘要： Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive materials containing silicon include polysilicon and silicon-germanium. There is also provided a method and structure for isolating the regions by providing a trench in an active area of a substrate, growing an epitaxial layer in the trench to fill the trench or to partially fill the trench and depositing an insulating material over the epitaxial layer and within the trench to completely fill the trench.

摘要翻译： 用于隔离半导体器件区域的隔离方法和装置。 隔离方法和结构包括在有源区中形成隔离沟槽，并用含硅的掺杂导电材料填充沟槽。 含硅的合适的导电材料包括多晶硅和硅 - 锗。 还提供了通过在衬底的有源区域中提供沟槽来隔离区域的方法和结构，在沟槽中生长外延层以填充沟槽或部分地填充沟槽并在外延层上沉积绝缘材料 并在沟槽内完全填满沟槽。

公开(公告)号：US07514715B2

公开(公告)日：2009-04-07

申请号：US10923943

申请日：2004-08-24

申请人： Howard Rhodes ,  Chandra Mouli

发明人： Howard Rhodes ,  Chandra Mouli

IPC分类号： H01L29/04 ,  H01L21/8238

CPC分类号： H01L21/26586 ,  H01L21/76224 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： A trench isolation having a sidewall and bottom implanted region located within a substrate of a first conductivity type is disclosed. The sidewall and bottom implanted region is formed by an angled implant, a 90 degree implant, or a combination of an angled implant and a 90 degree implant, of dopants of the first conductivity type. The sidewall and bottom implanted region located adjacent the trench isolation reduces surface leakage and dark current.

摘要翻译： 公开了具有位于第一导电类型的衬底内的侧壁和底部注入区的沟槽隔离。 侧壁和底部植入区域由第一导电类型的掺杂剂的成角度的植入物，90度植入物或倾斜植入物和90度植入物的组合形成。 位于沟槽隔离附近的侧壁和底部注入区域减少了表面泄漏和暗电流。

公开(公告)号：US07510897B2

公开(公告)日：2009-03-31

申请号：US11708067

申请日：2007-02-20

申请人： Chandra Mouli ,  Howard Rhodes

发明人： Chandra Mouli ,  Howard Rhodes

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14601 ,  H01L27/14609 ,  H01L27/14689

摘要： A pinned photodiode with a pinned surface layer formed by a self-aligned angled implant is disclosed. The angle of the implant may be tailored to provide an adequate offset between the pinned surface layer and an electrically active area of a transfer gate of the pixel sensor cell. The pinned surface layer is formed by employing the same mask level as the one employed for the formation of the photodiode region, and then implanting dopants at angles other than zero degrees.

摘要翻译： 公开了一种具有由自对准倾斜​​植入物形成的钉扎表面层的钉扎光电二极管。 可以调整植入物的角度以在被钉扎表面层和像素传感器单元的传输门的电活动区域之间提供适当的偏移。 被钉扎表面层通过采用与用于形成光电二极管区域的掩模级别相同的掩模级，然后以零度以外的角度注入掺杂剂来形成。

公开(公告)号：US20090011533A1

公开(公告)日：2009-01-08

申请号：US12208920

申请日：2008-09-11

申请人： Chandra Mouli ,  Howard Rhodes

发明人： Chandra Mouli ,  Howard Rhodes

IPC分类号： H01L31/18

CPC分类号： H01L27/1463 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/14601

摘要： Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive materials containing silicon include polysilicon and silicon-germanium. There is also provided a method and structure for isolating the regions by providing a trench in an active area of a substrate, growing an epitaxial layer in the trench to fill the trench or to partially fill the trench and depositing an insulating material over the epitaxial layer and within the trench to completely fill the trench.

摘要翻译： 用于隔离半导体器件区域的隔离方法和装置。 隔离方法和结构包括在有源区中形成隔离沟槽，并用含硅的掺杂导电材料填充沟槽。 含硅的合适的导电材料包括多晶硅和硅 - 锗。 还提供了通过在衬底的有源区域中提供沟槽来隔离区域的方法和结构，在沟槽中生长外延层以填充沟槽或部分地填充沟槽并在外延层上沉积绝缘材料 并在沟槽内完全填满沟槽。

公开(公告)号：US20080006857A1

公开(公告)日：2008-01-10

申请号：US11636979

申请日：2006-12-12

申请人： Chandra Mouli ,  Howard Rhodes

发明人： Chandra Mouli ,  Howard Rhodes

IPC分类号： H01L31/062

CPC分类号： H01L27/14601 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： A pinned photodiode with a pinned surface layer formed by a self-aligned angled implant is disclosed. The angle of the implant may be tailored to provide an adequate offset between the pinned surface layer and an electrically active area of a transfer gate of the pixel sensor cell. The pinned surface layer is formed by employing the same mask level as the one employed for the formation of the photodiode region, and then implanting dopants at angles other than zero degrees.

摘要翻译： 公开了一种具有由自对准倾斜​​植入物形成的钉扎表面层的钉扎光电二极管。 可以调整植入物的角度以在被钉扎表面层和像素传感器单元的传输门的电活动区域之间提供适当的偏移。 被钉扎表面层通过采用与用于形成光电二极管区域的掩模级别相同的掩模级，然后以零度以外的角度注入掺杂剂来形成。

公开(公告)号：US20050285167A1

公开(公告)日：2005-12-29

申请号：US11206125

申请日：2005-08-18

申请人： Chandra Mouli ,  Howard Rhodes

发明人： Chandra Mouli ,  Howard Rhodes

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L27/15 ,  H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14601 ,  H01L27/14609 ,  H01L27/14689

摘要： A pinned photodiode with a pinned surface layer formed by a self-aligned angled implant is disclosed. The angle of the implant may be tailored to provide an adequate offset between the pinned surface layer and an electrically active area of a transfer gate of the pixel sensor cell. The pinned surface layer is formed by employing the same mask level as the one employed for the formation of the photodiode region, and then implanting dopants at angles other than zero degrees.

摘要翻译： 公开了一种具有由自对准倾斜​​植入物形成的钉扎表面层的钉扎光电二极管。 可以调整植入物的角度以在被钉扎表面层和像素传感器单元的传输门的电活动区域之间提供适当的偏移。 被钉扎表面层通过采用与用于形成光电二极管区域的掩模级别相同的掩模级，然后以零度以外的角度注入掺杂剂来形成。

公开(公告)号：US20050023635A1

公开(公告)日：2005-02-03

申请号：US10926358

申请日：2004-08-26

申请人： Chandra Mouli ,  Howard Rhodes

发明人： Chandra Mouli ,  Howard Rhodes

IPC分类号： H01L21/20 ,  H01L27/146 ,  H01L29/04

CPC分类号： H01L27/1463 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/14601

摘要： Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive materials containing silicon include polysilicon and silicon-germanium. There is also provided a method and structure for isolating the regions by providing a trench in an active area of a substrate, growing an epitaxial layer in the trench to fill the trench or to partially fill the trench and depositing an insulating material over the epitaxial layer and within the trench to completely fill the trench.

公开(公告)号：US07470560B2

公开(公告)日：2008-12-30

申请号：US11434767

申请日：2006-05-17

申请人： Howard Rhodes ,  Chandra Mouli

发明人： Howard Rhodes ,  Chandra Mouli

IPC分类号： H01L21/00

CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035272

摘要： A deep implanted region of a first conductivity type located below a transistor array of a pixel sensor cell and adjacent a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The deep implanted region reduces surface leakage and dark current and increases the capacitance of the photodiode by acting as a reflective barrier to photo-generated charge in the doped region of the second conductivity type of the photodiode. The deep implanted region also provides improved charge transfer from the charge collection region of the photodiode to a floating diffusion region adjacent the gate of the transfer transistor.

摘要翻译： 公开了一种位于像素传感器单元的晶体管阵列下方并且与像素传感器单元的第二导电类型的光电二极管的掺杂区相邻的第一导电类型的深度注入区域。 深注入区域减小了表面泄漏和暗电流，并且通过在第二导电类型的光电二极管的掺杂区域中作为光生电荷的反射阻挡来增加光电二极管的电容。 深注入区域还提供从光电二极管的电荷收集区域到与传输晶体管的栅极相邻的浮动扩散区域的改进的电荷转移。