公开(公告)号：US09130524B2

公开(公告)日：2015-09-08

申请号：US14347634

申请日：2011-11-07

申请人： Jong Hoon Park ,  Chang Hyun Lee ,  Chang Kun Park

发明人： Jong Hoon Park ,  Chang Hyun Lee ,  Chang Kun Park

IPC分类号： H03F3/04 ,  H03G3/00 ,  H03F1/22 ,  H03F1/32 ,  H03F3/21 ,  H03F3/193 ,  H03F1/02 ,  H03F3/195

CPC分类号： H03G3/00 ,  H03F1/0266 ,  H03F1/223 ,  H03F1/3205 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F2200/18 ,  H03F2200/451 ,  H03F2203/21106 ,  H03F2203/21112 ,  H03F2203/21142

摘要： Disclosed is a linear amplifier which includes: a common source transistor with the gate connected with an input node; a first common gate transistor connected with the common source transistor in a cascode type, with the drain connected with an output node; and a second common gate transistor connected in parallel with the first common gate transistor, with the gate connected with the input node and the drain connected with the output node.

摘要翻译： 公开了一种线性放大器，其包括：公共源晶体管，其栅极与输入节点连接; 与共源共栅型公共源晶体管连接的第一公共栅极晶体管，漏极与输出节点连接; 以及与所述第一公共栅极晶体管并联连接的第二公共栅极晶体管，所述栅极与所述输入节点连接，所述漏极与所述输出节点连接。

公开(公告)号：US09214904B2

公开(公告)日：2015-12-15

申请号：US14350078

申请日：2011-12-23

申请人： Chang Hyun Lee ,  Chang Kun Park

发明人： Chang Hyun Lee ,  Chang Kun Park

IPC分类号： H03F3/21 ,  H03F3/193 ,  H03F1/22 ,  H03F3/195 ,  H03F3/24 ,  H03F3/45

CPC分类号： H03F3/21 ,  H03F1/223 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F3/245 ,  H03F3/4508 ,  H03F3/45179 ,  H03F2200/451 ,  H03F2203/45318 ,  H03F2203/45364 ,  H03F2203/45394 ,  H03F2203/45562 ,  H03F2203/45638 ,  H03F2203/45644

摘要： Disclosed is a differential power amplifier using mode injection, which includes: a first transistor of which the gate receives a first signal and the source is connected to the ground; a second transistor of which the gate receives a second signal and the source is connected to the ground; a third transistor of which the source is connected to the source of the first transistor; a fourth transistor of which the source is connected to the source of the second transistor; a fifth transistor of which the source is connected with the drain of the first transistor and the drain is connected with a first output port and the drain of the third transistor; and a sixth transistor of which the source is connected with the drain of the second transistor and the drain is connected with a second output port and the drain of the fourth transistor.

摘要翻译： 公开了一种使用模式注入的差分功率放大器，其包括：栅极接收第一信号并且源极连接到地的第一晶体管; 栅极接收第二信号并且源极连接到地的第二晶体管; 源极连接到第一晶体管的源极的第三晶体管; 源极连接到第二晶体管的源极的第四晶体管; 源极与第一晶体管的漏极连接的第五晶体管，漏极与第三晶体管的第一输出端口和漏极连接; 以及第六晶体管，其源极与第二晶体管的漏极连接，漏极与第四晶体管的第二输出端口和漏极连接。

公开(公告)号：US20140253234A1

公开(公告)日：2014-09-11

申请号：US14350078

申请日：2011-12-23

申请人： Chang Hyun Lee ,  Chang Kun Park

发明人： Chang Hyun Lee ,  Chang Kun Park

IPC分类号： H03F3/21 ,  H03F3/193 ,  H03F3/45

CPC分类号： H03F3/21 ,  H03F1/223 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F3/245 ,  H03F3/4508 ,  H03F3/45179 ,  H03F2200/451 ,  H03F2203/45318 ,  H03F2203/45364 ,  H03F2203/45394 ,  H03F2203/45562 ,  H03F2203/45638 ,  H03F2203/45644

摘要： Disclosed is a differential power amplifier using mode injection, which includes: a first transistor of which the gate receives a first signal and the source is connected to the ground; a second transistor of which the gate receives a second signal and the source is connected to the ground; a third transistor of which the source is connected to the source of the first transistor; a fourth transistor of which the source is connected to the source of the second transistor; a fifth transistor of which the source is connected with the drain of the first transistor and the drain is connected with a first output port and the drain of the third transistor; and a sixth transistor of which the source is connected with the drain of the second transistor and the drain is connected with a second output port and the drain of the fourth transistor.

摘要翻译： 公开了一种使用模式注入的差分功率放大器，其包括：栅极接收第一信号并且源极连接到地的第一晶体管; 栅极接收第二信号并且源极连接到地的第二晶体管; 源极连接到第一晶体管的源极的第三晶体管; 源极连接到第二晶体管的源极的第四晶体管; 源极与第一晶体管的漏极连接的第五晶体管，漏极与第三晶体管的第一输出端口和漏极连接; 以及第六晶体管，其源极与第二晶体管的漏极连接，漏极与第四晶体管的第二输出端口和漏极连接。

公开(公告)号：US08613238B2

公开(公告)日：2013-12-24

申请号：US13559086

申请日：2012-07-26

申请人： Joon Young Park ,  Chang Hyun Lee

发明人： Joon Young Park ,  Chang Hyun Lee

IPC分类号： G05G1/02 ,  G05G1/08

CPC分类号： G05G1/10 ,  F16H59/0278 ,  G05G1/08 ,  G05G1/087 ,  Y10T74/20612 ,  Y10T74/20732 ,  Y10T74/2084

摘要： A control knob for a vehicle has an improved outward appearance by forming a boundary line between two different materials in a portion that is not visible and preventing abrupt differences in color due to light refraction. The control knob is produced by dual injection molding of two different materials, is installed on one end of a shift lever, and functions as a handgrip. The control knob includes an portion of opaque and transparent materials, an overlapping portion opaque and transparent materials, and a coated portion formed of paint applied to portions of the transparent portion that do not overlap with the opaque portion. A boundary surface between the opaque and transparent portions is such that a refractive index of light passing through the transparent portion from the overlapping portion is close to a refractive index of light passing through the transparent portion from the coated portion.

摘要翻译： 用于车辆的控制旋钮通过在不可见的部分中形成两种不同材料之间的边界线并防止由于光折射引起的颜色的突然差异而具有改进的外观。 控制旋钮通过两种不同材料的双注射成型制造，安装在换档杆的一端，并用作手柄。 控制旋钮包括不透明和透明材料的一部分，重叠部分不透明和透明材料，以及由涂料形成的涂覆部分，涂覆到透明部分与不透明部分不重叠的部分。 不透明部分和透明部分之间的边界面使得从重叠部分穿过透明部分的光的折射率接近于从涂覆部分穿过透明部分的光的折射率。

公开(公告)号：US20100054036A1

公开(公告)日：2010-03-04

申请号：US12583811

申请日：2009-08-26

申请人： Chang Hyun Lee ,  Dong Dae Kim ,  Byung In Choi

发明人： Chang Hyun Lee ,  Dong Dae Kim ,  Byung In Choi

IPC分类号： G11C16/04 ,  G11C16/06

CPC分类号： G11C11/5628 ,  G11C16/0483

摘要： Embodiments are directed to a method of programming a semiconductor memory device, the memory device including: a plurality of memory cell transistors arranged in a plurality of transistor strings; a plurality of word lines, each word line connected to a corresponding memory cell transistor of each of the transistor strings; and a plurality of bit lines, each bit line connected to at least one of the transistor strings, the method comprising: applying a first voltage, and then applying a programming voltage to a selected word line corresponding to the selected memory cell transistor; and in advance of applying the first voltage to the selected word line, applying a second voltage to at least one neighboring word line that neighbors the selected word line, the neighboring word line connected to a neighboring, unselected memory cell transistor of the selected transistor string, to ensure precharging of a channel region of another, unselected transistor string between a first, unselected transistor of the unselected transistor string connected to the neighboring word line and a second, unselected transistor of the unselected transistor string connected to the selected word line, the first, unselected transistor neighboring the second, unselected transistor in the unselected transistor string.

摘要翻译： 实施例涉及一种编程半导体存储器件的方法，该存储器件包括：以多个晶体管串排列的多个存储单元晶体管; 多个字线，每个字线连接到每个晶体管串的对应的存储单元晶体管; 和多个位线，每个位线连接到晶体管串中的至少一个，所述方法包括：施加第一电压，然后将编程电压施加到对应于所选择的存储单元晶体管的选定字线; 并且在对所选择的字线施加第一电压之前，向邻近所选字线的至少一个相邻字线施加第二电压，连接到所选晶体管串的相邻未选择的存储单元晶体管的相邻字线 以确保连接到相邻字线的未选择晶体管串的第一未选择晶体管与连接到所选字线的未选择晶体管串的第二未选择晶体管之间的另一未选择晶体管串的通道区域的预充电， 首先，与未选择的晶体管串中的第二未选择晶体管相邻的未选择的晶体管。

公开(公告)号：US20090321811A1

公开(公告)日：2009-12-31

申请号：US12492237

申请日：2009-06-26

申请人： Chang Hyun Lee ,  Jung Dal Choi

发明人： Chang Hyun Lee ,  Jung Dal Choi

IPC分类号： H01L29/788 ,  H01L27/06

CPC分类号： H01L27/11565 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/7883 ,  H01L29/792

摘要： A memory cell transistor comprises: an active region, the active region being elongated in a first direction of extension; a tunnel layer on the active region, the tunnel layer comprising a first tunnel insulating layer, a second tunnel insulating layer on the first tunnel insulating layer and a third tunnel insulating layer on the second tunnel insulating layer; a charge storage layer on the tunnel layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer, the control gate electrode being elongated in a second direction of extension that is transverse the first direction of extension, the active region having a first width in the second direction of extension, the second tunnel insulating layer having a second width in the second direction of extension, the second width being different than the first width.

摘要翻译： 存储单元晶体管包括：有源区，有源区在第一扩展方向上是细长的; 所述隧道层包括第一隧道绝缘层，所述第一隧道绝缘层上的第二隧道绝缘层和所述第二隧道绝缘层上的第三隧道绝缘层; 隧道层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅极电极，所述控制栅极电极在与所述第一延伸方向横向的第二延伸方向上延伸，所述有源区域在所述第二延伸方向上具有第一宽度，所述第二隧道绝缘 层在第二延伸方向上具有第二宽度，第二宽度不同于第一宽度。

公开(公告)号：US06527634B2

公开(公告)日：2003-03-04

申请号：US09886287

申请日：2001-06-22

申请人： Chang Hyun Lee ,  Joon Ho Chang

发明人： Chang Hyun Lee ,  Joon Ho Chang

IPC分类号： B23F2103

CPC分类号： B24D7/06 ,  B24D7/14

摘要： The present invention is intended to provide a grinding wheel which is prevented from the one-sided wear or the wear taking place intensively at the outer side of the segments due to working load so as to improve the processed quality of the ground surface. Thus the invention proposes a grinding wheel comprising a plurality of segments attached to the underside of a rim part of a grinding wheel, a rim part for supporting the segments, rib parts for connecting the rim part with a disk part, and a disk part with a central hole for connection to a motor-operated tool, wherein the segments are each demarcated into the inner portion and outer portion around the demarcating interface and the outer portions are so treated as to constitute a higher wear resisting region than the inner portions by controlling the particle size and/or the content of the super abrasive and/or by controlling the hardness of the metal bonding material for binding the abrasive particles together, in order to prevent one-sided wear.

公开(公告)号：US20100105783A1

公开(公告)日：2010-04-29

申请号：US12654572

申请日：2009-12-23

申请人： Chang Hyun Lee ,  Jong Soo Woo ,  Hong Gi Yi ,  Kyeong Soo Kim ,  Ho Taek Yim

发明人： Chang Hyun Lee ,  Jong Soo Woo ,  Hong Gi Yi ,  Kyeong Soo Kim ,  Ho Taek Yim

IPC分类号： A61K47/26 ,  A61K47/10 ,  B65B1/02 ,  B65B1/24 ,  B65B43/04 ,  B65B63/08

CPC分类号： A61K9/0056 ,  A61J3/10 ,  A61K9/2095 ,  B30B11/02 ,  B30B11/08 ,  B65B9/042 ,  B65B9/045

摘要： A method and packaging machine for preparing rapidly disintegrating formulations for oral administration are disclosed. The present invention is characterized in that a powdery mixture including a pharmaceutically active ingredient and a sugar or a sugar alcohol powder is filled into a packaging material and, thereafter, the mixture, filled in the packaging material, is heated. The present invention can simply and economically prepare an oral formulation which undergoes rapid disintegration in the oral cavity and provides for high-quality administration to patients.

摘要翻译： 公开了用于制备用于口服给药的快速崩解制剂的方法和包装机。 本发明的特征在于将包含药物活性成分和糖或糖醇粉末的粉末混合物填充到包装材料中，然后将填充在包装材料中的混合物加热。 本发明可以简单且经济地制备在口腔中快速崩解并提供给患者高质量给药的口服制剂。

公开(公告)号：US07651119B2

公开(公告)日：2010-01-26

申请号：US11642449

申请日：2006-12-20

申请人： Chang Hyun Lee

发明人： Chang Hyun Lee

IPC分类号： B60R21/203

CPC分类号： B60R21/20 ,  B60R21/201 ,  B60R21/2037

摘要： An air bag apparatus includes: a supporting plate; an air bag case mounted on the supporting plate such that a space is formed therein; an air bag cushion installed in the space and attached to the supporting plate; an inflator for supplying a gas to the air bag cushion, the inflator being mounted at the supporting plate; and a clamping device for clamping a middle portion of the air bag cushion, the clamping device being coupled with the supporting plate. The inflator may supply the gas to side portions of the air bag, such that the side portions expand for a predetermined time while the middle portion is clamped by the clamping device, and when the inflating force of the air bag overcomes the clamping force, the middle portion expands.

摘要翻译： 气囊装置包括：支撑板; 安装在所述支撑板上的气囊壳体，以便在其中形成空间; 安装在该空间中并安装在支撑板上的气囊垫; 用于向气囊垫提供气体的充气机，所述充气机安装在所述支撑板上; 以及用于夹持气囊衬垫的中间部分的夹紧装置，夹紧装置与支撑板联接。 充气机可以将气体供应到气囊的侧部，使得侧部膨胀预定时间，同时中间部分被夹紧装置夹紧，并且当气囊的膨胀力克服夹紧力时， 中间部分展开。

公开(公告)号：US06551181B2

公开(公告)日：2003-04-22

申请号：US09944704

申请日：2001-08-31

申请人： Chang Hyun Lee

发明人： Chang Hyun Lee

IPC分类号： B23F2103

CPC分类号： B24D7/06 ,  B24B55/102

摘要： An abrasive wheel to grind or cut a variety of materials comprising a core part fixed to a tool transmitting motive power and long tips and short tips alternately attached on the base surface of a shank around the core part. The tips are arranged to cover the base surface with space therebetween at predetermined intervals along the circumference of the shank.

摘要翻译： 一种用于研磨或切割各种材料的研磨轮，其包括固定到传递动力的工具的芯部件和长的尖端以及交替地附接在芯部的芯部的基部表面上的短尖端。 尖端布置成沿着柄的圆周以预定间隔覆盖基部表面，其间具有空间。