公开(公告)号：US20090283789A1

公开(公告)日：2009-11-19

申请号：US12195741

申请日：2008-08-21

申请人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

发明人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval.

摘要翻译： 本公开涉及通过电子和空穴的复合产生光的半导体发光器件，其包括：用于提供电子和空穴中的一个的第一指状电极，提供另一个电子和空穴的第二指状电极， 并且以第一间隔与第一指状电极间隔开; 以及电连接到第一指状电极的第三指状电极，并且以比第一间隔小的第二间隔与第二指状电极间隔开。

公开(公告)号：US07795610B2

公开(公告)日：2010-09-14

申请号：US12195741

申请日：2008-08-21

申请人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

发明人： Chang Tae Kim ,  Gi Yeon Nam ,  Byeong Kyun Choi ,  Hyun Suk Kim

IPC分类号： H01L29/06 ,  H01L29/12

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval.

摘要翻译： 本公开涉及通过电子和空穴的复合产生光的半导体发光器件，其包括：用于提供电子和空穴中的一个的第一指状电极，提供另一个电子和空穴的第二指状电极， 并且以第一间隔与第一指状电极间隔开; 以及电连接到第一指状电极的第三指状电极，并且以比第一间隔小的第二间隔与第二指状电极间隔开。

公开(公告)号：US20080315240A1

公开(公告)日：2008-12-25

申请号：US12196066

申请日：2008-08-21

申请人： Chang Tae Kim ,  Hyun-Min Jung ,  Tae Hee Lee ,  Byeong Kyun Choi ,  Hyun Suk Kim ,  Gi Yeon Nam

发明人： Chang Tae Kim ,  Hyun-Min Jung ,  Tae Hee Lee ,  Byeong Kyun Choi ,  Hyun Suk Kim ,  Gi Yeon Nam

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/46

摘要： The present disclosure relates to an III-nitride semiconductor light emitting device, particularly, an electrode structure thereof. The III-nitride semiconductor light emitting device includes a substrate, a plurality of III-nitride semiconductor layers grown on the substrate, and composed of a first III-nitride semiconductor layer with first conductivity, a second III-nitride semiconductor layer with second conductivity different from the first conductivity, and an active layer positioned between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer, for generating light by recombination of electrons and holes, and a hole passing through the substrate and the plurality of III-nitride semiconductor layers.

摘要翻译： 本公开涉及III族氮化物半导体发光器件，特别是其电极结构。 III族氮化物半导体发光器件包括衬底，在衬底上生长的多个III族氮化物半导体层，由具有第一导电性的第一III族氮化物半导体层，具有第二导电性的第二III族氮化物半导体层组成 以及位于第一III族氮化物半导体层和第二III族氮化物半导体层之间的有源层，用于通过电子和空穴的复合产生光，以及穿过衬底的多个III- 氮化物半导体层。

公开(公告)号：US20140110746A1

公开(公告)日：2014-04-24

申请号：US14143994

申请日：2013-12-30

申请人： Woo Sik LIM ,  Sung Ho Choo ,  Byeong Kyun Choi

发明人： Woo Sik LIM ,  Sung Ho Choo ,  Byeong Kyun Choi

IPC分类号： H01L33/38

CPC分类号： H01L33/382 ,  H01L33/0008 ,  H01L33/36 ,  H01L33/38 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed are a light emitting device. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode disposed in an opening portion of the light emitting structure and contacted with a portion of the first conductive type semiconductor layer, an insulating layer covering the first electrode, a second electrode disposed connected to the second conductive type semiconductor layer and first electrode layer is connected to the second conductive type semiconductor layer and the second electrode. The first electrode layer is disposed on a top surface of the second conductive type semiconductor layer and a top surface of the insulating layer. The second electrode is not vertically overlapped with the first electrode.

摘要翻译： 公开了一种发光器件。 发光器件包括发光结构，其包括第一导电类型半导体层，有源层和第二导电类型半导体层，第一电极，设置在发光结构的开口部分中并与第一导电类型半导体层 导电型半导体层，覆盖第一电极的绝缘层，与第二导电类型半导体层连接的第二电极和第一电极层连接到第二导电类型半导体层和第二电极。 第一电极层设置在第二导电类型半导体层的顶表面和绝缘层的顶表面上。 第二电极不与第一电极垂直重叠。

公开(公告)号：US20110210345A1

公开(公告)日：2011-09-01

申请号：US13031788

申请日：2011-02-22

申请人： Woo Sik LIM ,  Sung Kyoon Kim ,  Sung Ho Choo ,  Byeong Kyun Choi

发明人： Woo Sik LIM ,  Sung Kyoon Kim ,  Sung Ho Choo ,  Byeong Kyun Choi

IPC分类号： H01L33/62

CPC分类号： H01L33/24 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Provided is a light emitting device. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode connected to the first conductive type semiconductor layer, a current spreading layer on the second conductive type semiconductor layer, an insulation layer on the first electrode, and a second electrode comprising at least one bridge portion on the insulation layer and a first contact portion contacting at least one of the second conductive type semiconductor layer and the current spreading layer.

摘要翻译： 提供了一种发光装置。 发光器件包括发光结构层，其包括第一导电类型半导体层，有源层和第二导电类型半导体层，连接到第一导电类型半导体层的第一电极，第二导电类型的电流扩散层 第一电极上的绝缘层，以及包括绝缘层上的至少一个桥接部分的第二电极和与第二导电类型半导体层和电流扩展层中的至少一个接触的第一接触部分。

公开(公告)号：US08884328B2

公开(公告)日：2014-11-11

申请号：US13031788

申请日：2011-02-22

申请人： Woo Sik Lim ,  Sung Kyoon Kim ,  Sung Ho Choo ,  Byeong Kyun Choi

发明人： Woo Sik Lim ,  Sung Kyoon Kim ,  Sung Ho Choo ,  Byeong Kyun Choi

IPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/08

CPC分类号： H01L33/24 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Provided is a light emitting device. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode connected to the first conductive type semiconductor layer, a current spreading layer on the second conductive type semiconductor layer, an insulation layer on the first electrode, and a second electrode comprising at least one bridge portion on the insulation layer and a first contact portion contacting at least one of the second conductive type semiconductor layer and the current spreading layer.

摘要翻译： 提供了一种发光装置。 发光器件包括发光结构层，其包括第一导电类型半导体层，有源层和第二导电类型半导体层，连接到第一导电类型半导体层的第一电极，第二导电类型的电流扩散层 第一电极上的绝缘层，以及包括绝缘层上的至少一个桥接部分的第二电极和与第二导电类型半导体层和电流扩展层中的至少一个接触的第一接触部分。

公开(公告)号：US08283692B2

公开(公告)日：2012-10-09

申请号：US12783638

申请日：2010-05-20

申请人： Woo Sik Lim ,  Sung Ho Choo ,  Byeong Kyun Choi

发明人： Woo Sik Lim ,  Sung Ho Choo ,  Byeong Kyun Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/0008 ,  H01L33/36 ,  H01L33/38 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure that includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first electrode including at least one arm shape and contacted with a portion of the first conductive type semiconductor layer, an insulating layer covering the first electrode, and a second electrode including on at least one arm shape, wherein the second electrode disposes on at least one of the insulating layer and the second conductive type semiconductor layer.

摘要翻译： 公开了一种发光器件和具有该发光器件的发光器件封装。 发光器件包括发光结构，其包括第一导电类型半导体层，第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层，第一电极，其包括至少一个臂形状 并且与第一导电类型半导体层的一部分，覆盖第一电极的绝缘层和包括至少一个臂形状的第二电极接触，其中第二电极配置在绝缘层和第二导电性中的至少一个上 型半导体层。

公开(公告)号：US08053805B2

公开(公告)日：2011-11-08

申请号：US12964454

申请日：2010-12-09

申请人： Woo Sik Lim ,  Sung Kyoon Kim ,  Sung Ho Choo ,  Byeong Kyun Choi

发明人： Woo Sik Lim ,  Sung Kyoon Kim ,  Sung Ho Choo ,  Byeong Kyun Choi

IPC分类号： H01L33/38

CPC分类号： H01L33/38 ,  H01L24/05 ,  H01L33/387 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and an electrode comprising a pad part and a finger part on the light emitting structure layer. The pad part comprises a pattern in which at least one opening is defined, and the finger part comprises a pattern electrically connected to the pad part and linearly extending from the pad part.

摘要翻译： 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括发光结构层，其包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层，以及包括衬垫 部分和手指部分在发光结构层上。 垫部分包括其中限定了至少一个开口的图案，并且指部分包括电连接到垫部分并且从垫部分线性延伸的图案。

公开(公告)号：US08648383B2

公开(公告)日：2014-02-11

申请号：US13627617

申请日：2012-09-26

申请人： Woo Sik Lim ,  Sung Ho Choo ,  Byeong Kyun Choi

发明人： Woo Sik Lim ,  Sung Ho Choo ,  Byeong Kyun Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/0008 ,  H01L33/36 ,  H01L33/38 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode disposed in an opening portion of the light emitting structure and contacted with a portion of the first conductive type semiconductor layer, an insulating layer covering the first electrode, a second electrode disposed on the insulating layer and connected to the second conductive type semiconductor layer, a first electrode layer under the second electrode.

摘要翻译： 公开了一种发光器件和具有该发光器件的发光器件封装。 发光器件包括发光结构，其包括第一导电类型半导体层，有源层和第二导电类型半导体层，第一电极，设置在发光结构的开口部分中并与第一导电类型半导体层 导电型半导体层，覆盖第一电极的绝缘层，设置在绝缘层上并连接到第二导电类型半导体层的第二电极，在第二电极下面的第一电极层。

公开(公告)号：US20110140161A1

公开(公告)日：2011-06-16

申请号：US12964454

申请日：2010-12-09

申请人： Woo Sik LIM ,  Sung Kyoon Kim ,  Sung Ho Choo ,  Byeong Kyun Choi

发明人： Woo Sik LIM ,  Sung Kyoon Kim ,  Sung Ho Choo ,  Byeong Kyun Choi

IPC分类号： H01L33/38

CPC分类号： H01L33/38 ,  H01L24/05 ,  H01L33/387 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and an electrode comprising a pad part and a finger part on the light emitting structure layer. The pad part comprises a pattern in which at least one opening is defined, and the finger part comprises a pattern electrically connected to the pad part and linearly extending from the pad part.

摘要翻译： 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括发光结构层，其包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层，以及包括衬垫 部分和手指部分在发光结构层上。 垫部分包括其中限定了至少一个开口的图案，并且指部分包括电连接到垫部分并且从垫部分线性延伸的图案。