公开(公告)号：US20120021546A1

公开(公告)日：2012-01-26

申请号：US13137124

申请日：2011-07-21

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

公开(公告)号：US20110053303A1

公开(公告)日：2011-03-03

申请号：US12805958

申请日：2010-08-26

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

公开(公告)号：US08329488B2

公开(公告)日：2012-12-11

申请号：US13506295

申请日：2012-04-10

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

公开(公告)号：US08183075B2

公开(公告)日：2012-05-22

申请号：US13137124

申请日：2011-07-21

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

摘要翻译： 本发明提供一种制造半导体衬底的方法和一种制造发光器件的方法。 该方法包括在基板上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层和金属材料层上形成第二半导体层，在第一半导体层的第一部分形成空隙 在第二半导体层形成期间在金属材料层下面的第一半导体层，以及通过使用化学溶液蚀刻第一半导体层的至少第二部分来将衬底与第二半导体层分离。

公开(公告)号：US08026119B2

公开(公告)日：2011-09-27

申请号：US12805958

申请日：2010-08-26

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

摘要翻译： 本发明提供一种制造半导体衬底的方法和一种制造发光器件的方法。 该方法包括在基板上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层和金属材料层上形成第二半导体层，在第一半导体层的第一部分形成空隙 在第二半导体层形成期间在金属材料层下面的第一半导体层，以及通过使用化学溶液蚀刻第一半导体层的至少第二部分来将衬底与第二半导体层分离。

公开(公告)号：US08680559B2

公开(公告)日：2014-03-25

申请号：US12941536

申请日：2010-11-08

申请人： Kyoung Wan Kim ,  Soo Young Moon ,  Kyu Ho Lee ,  Yeo Jin Yoon ,  Jeong Hee Yang ,  Won Cheol Seo

发明人： Kyoung Wan Kim ,  Soo Young Moon ,  Kyu Ho Lee ,  Yeo Jin Yoon ,  Jeong Hee Yang ,  Won Cheol Seo

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.

摘要翻译： 本发明的一个示例性实施例公开了一种发光二极管，其包括具有彼此相对的第一边缘和第二边缘的基板，设置在基板上的发光结构，所述发光结构包括第一半导体层和第二半导体 布置在第一半导体层的上表面上的多个第一电极焊盘，布置在第一边缘附近的第一电极焊盘，布置在第二半导体层上的多个第二电极焊盘，布置在第二半导体层上的第二电极焊盘 在第二边缘附近，多个第一延伸部，每个第一延伸部从第一电极焊盘延伸，以及多个第二延伸部，每个第二延伸部从第二电极焊盘延伸。 第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分，其中入侵部分彼此间隔开并且不与第二电极焊盘连接。 此外，第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分，其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。

公开(公告)号：US08541806B2

公开(公告)日：2013-09-24

申请号：US12963921

申请日：2010-12-09

申请人： Kyoung Wan Kim ,  Jeong Hee Yang ,  Yeo Jin Yoon

发明人： Kyoung Wan Kim ,  Jeong Hee Yang ,  Yeo Jin Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/382 ,  H01L33/44

摘要： The present invention relates to a light emitting diode including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the first conductive type semiconductor layer, and an insulation layer disposed between the first conductive type semiconductor layer and the second electrode pad, the insulation layer insulating the second electrode pad from the first conductive type semiconductor layer. At least one upper extension may be electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

摘要翻译： 本发明涉及一种发光二极管，包括基板，布置在基板上的第一导电型半导体层，布置在第一导电型半导体层上的第二导电型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第一导电类型半导体层上的第二电极焊盘以及设置在第一导电类型半导体层和第二导电类型半导体层之间的绝缘层 所述绝缘层将所述第二电极焊盘与所述第一导电型半导体层绝缘。 至少一个上延伸部可以电连接到第二电极焊盘，所述至少一个上延伸部电连接到第二导电类型半导体层。

公开(公告)号：US08436369B2

公开(公告)日：2013-05-07

申请号：US13617810

申请日：2012-09-14

申请人： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

发明人： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

公开(公告)号：US08987772B2

公开(公告)日：2015-03-24

申请号：US13885777

申请日：2011-02-28

申请人： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang-Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

发明人： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang-Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

IPC分类号： H01L33/38 ,  H01L33/46 ,  H01L33/10 ,  H01L33/40 ,  H01L33/44 ,  H01L33/60 ,  H01L33/36 ,  H01L33/20 ,  H01L33/42

CPC分类号： H01L33/387 ,  H01L33/0008 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0066

摘要： Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

摘要翻译： 本文公开了包括电极焊盘的LED芯片。 LED芯片包括：第一导电型半导体层，第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

公开(公告)号：US08309971B2

公开(公告)日：2012-11-13

申请号：US12974917

申请日：2010-12-21

申请人： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

发明人： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

摘要翻译： 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。