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23 条记录 (耗时 0.025 秒)

    Oxide semiconductors and thin film transistors comprising the same
    1.
    发明授权
    Oxide semiconductors and thin film transistors comprising the same 有权
    氧化物半导体和包括其的薄膜晶体管

    公开(公告)号：US07935964B2

    公开(公告)日：2011-05-03

    申请号：US12213327

    申请日：2008-06-18

    申请人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

    发明人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

    IPC分类号： H01L29/10

    CPC分类号： H01L29/7869

    摘要： Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Hf and Cr atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Hf and Cr atoms added thereto.

    摘要翻译： 提供包括其的氧化物半导体和薄膜晶体管（TFT）。 氧化物半导体包括Zn原子和添加了Hf原子和Cr原子中的至少一种。 薄膜晶体管（TFT）包括包括包含Zn原子和添加有Hf原子和Cr原子中的至少一种的氧化物半导体的沟道。

    Oxide semiconductors and thin film transistors comprising the same
    2.
    发明申请
    Oxide semiconductors and thin film transistors comprising the same 有权
    氧化物半导体和包括其的薄膜晶体管

    公开(公告)号：US20080315200A1

    公开(公告)日：2008-12-25

    申请号：US12213327

    申请日：2008-06-18

    申请人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

    发明人： Chang-jung Kim ,  Eun-ha Lee ,  Young-soo Park ,  Jae-chul Park

    IPC分类号： H01L29/10

    CPC分类号： H01L29/7869

    摘要： Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Hf and Cr atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Hf and Cr atoms added thereto.

    摘要翻译： 提供包括其的氧化物半导体和薄膜晶体管（TFT）。 氧化物半导体包括Zn原子和添加了Hf原子和Cr原子中的至少一种。 薄膜晶体管（TFT）包括包括包含Zn原子和添加有Hf原子和Cr原子中的至少一种的氧化物半导体的沟道。

    Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
    6.
    发明授权
    Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor 有权
    薄膜晶体管包括选择性结晶的沟道层和制造薄膜晶体管的方法

    公开(公告)号：US08618543B2

    公开(公告)日：2013-12-31

    申请号：US11978581

    申请日：2007-10-30

    申请人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

    发明人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

    IPC分类号： H01L29/04

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675

    摘要： Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

    摘要翻译： 提供了包括选择性晶化的沟道层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括栅极，沟道层，源极和漏极。 沟道层由氧化物半导体形成，并且与源极和漏极接触的沟道层的至少一部分结晶。 在制造TFT的方法中，沟道层由氧化物半导体形成，并且将金属成分注入到沟道层中，以便使与沟道层和漏极接触的沟道层的至少一部分结晶。 可以通过沉积和热处理金属层或通过离子注入将金属成分注入到沟道层中。

    Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
    7.
    发明申请
    Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor 有权
    薄膜晶体管包括选择性结晶的沟道层和制造薄膜晶体管的方法

    公开(公告)号：US20080258140A1

    公开(公告)日：2008-10-23

    申请号：US11978581

    申请日：2007-10-30

    申请人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

    发明人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

    IPC分类号： H01L29/04 ,  H01L21/34

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675

    摘要： Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

    摘要翻译： 提供了包括选择性晶化的沟道层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括栅极，沟道层，源极和漏极。 沟道层由氧化物半导体形成，并且与源极和漏极接触的沟道层的至少一部分结晶。 在制造TFT的方法中，沟道层由氧化物半导体形成，并且将金属成分注入到沟道层中，以便使与沟道层和漏极接触的沟道层的至少一部分结晶。 可以通过沉积和热处理金属层或通过离子注入将金属成分注入到沟道层中。

    Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same
    8.
    发明授权
    Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same 有权
    Al掺杂电荷陷阱层，非易失性存储器件及其制造方法

    公开(公告)号：US07838422B2

    公开(公告)日：2010-11-23

    申请号：US11892849

    申请日：2007-08-28

    申请人： Eun-ha Lee ,  Hion-suck Baik ,  Kwang-soo Seol ,  Sang-jin Park ,  Jong-bong Park ,  Min-ho Yang

    发明人： Eun-ha Lee ,  Hion-suck Baik ,  Kwang-soo Seol ,  Sang-jin Park ,  Jong-bong Park ,  Min-ho Yang

    IPC分类号： H01L21/44

    CPC分类号： H01L29/42332 ,  Y10T428/259

    摘要： Provided is an aluminum (Al) doped charge trap layer, a non-volatile memory device and methods of fabricating the same. The charge trap layer may include a plurality of silicon nano dots that trap charges and a silicon oxide layer that covers the silicon nano dots, wherein the charge trap layer is doped with aluminum (Al). The non-volatile memory device may include a substrate including a source and a drain on separate regions of the substrate, a tunneling film on the substrate contacting the source and the drain, the charge trap layer according to example embodiments, a blocking film on the charge trap layer, and a gate electrode on the blocking film.

    摘要翻译： 提供了铝（Al）掺杂的电荷阱层，非易失性存储器件及其制造方法。 电荷陷阱层可以包括捕获电荷的多个硅纳米点和覆盖硅纳米点的氧化硅层，其中电荷陷阱层掺杂有铝（Al）。 非挥发性存储器件可以包括衬底，该衬底包括在衬底的分离区域上的源极和漏极，在衬底上接触源极和漏极的隧道膜，根据示例性实施例的电荷陷阱层， 电荷陷阱层和阻挡膜上的栅电极。

    Method of managing sound source and apparatus therefor
    10.
    发明申请
    Method of managing sound source and apparatus therefor 有权
    管理声源及其设备的方法

    公开(公告)号：US20060122841A1

    公开(公告)日：2006-06-08

    申请号：US11270476

    申请日：2005-11-10

    申请人： Jung-eun Shin ,  Eun-ha Lee

    发明人： Jung-eun Shin ,  Eun-ha Lee

    IPC分类号： G10L21/00 ,  H04N9/475

    CPC分类号： G10H1/361 ,  G10H1/0008 ,  G10H1/22 ,  G10H1/46 ,  G10H2210/056 ,  G10H2220/106

    摘要： A method of managing a sound source in a digital AV device and an apparatus thereof are provided. The method of managing a sound source in a digital AV device includes: extracting at least one sound source from sound being reproduced through the digital AV device; mapping an image to the extracted sound source; and managing the sound sources by using the mapped image. In addition, preferably, the extracted sound source is registered, changed, deleted, selectively reproduced, or selectively deleted by using the image. Accordingly, sound being output can be visually managed by handling the sound sources separately, a desired sound source can be selectively reproduced or removed such that utilization of the digital AV device can be enhanced.

    摘要翻译： 提供一种管理数字AV设备中的声源的方法及其装置。 在数字AV设备中管理声源的方法包括：从通过数字AV设备再现的声音提取至少一个声源; 将图像映射到提取的声源; 并通过使用映射图像管理声源。 此外，优选地，通过使用图像来注册，改变，删除，选择性地再现或选择性地删除所提取的声源。 因此，可以通过单独处理声源来视觉地管理输出的声音，可以选择性地再现或去除期望的声源，从而可以增强数字AV设备的利用。