摘要:
A method for fabricating a semiconductor device with high-k materials. A high-k dielectric layer is formed on a substrate, followed by a fluorine-containing treatment of the high-k dielectric layer, forming an interface containing Si—F bonds.
摘要:
A method of patterning a metal alloy material layer having hafnium and molybdenum. The method includes forming a patterned mask layer on a metal alloy material layer having hafnium and molybdenum on a substrate. The patterned mask layer is used as a mask and an etching process is performed using an etchant on the metal alloy material layer having hafnium and molybdenum so as to form a metal alloy layer having hafnium and molybdenum. The etchant includes at least nitric acid, hydrofluoric acid and sulfuric acid. The patterned mask layer is removed.
摘要:
A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.
摘要:
A method for forming a bottle-shaped trench. A semiconductor substrate having a pad stack layer thereon and a trench in a predetermined position is provided. A first dielectric layer is then formed on the lower sidewalls of the trench. Next, a second dielectric layer is formed to cover the upper sidewalls of the trench and the pad stack layer. Then, a protection layer is formed on the sidewalls portions of the second dielectric layer. The first dielectric layer is then removed to expose the lower portion of trench. Wet stripping is then carried out to increase the radius of the lower portion of the trench thereby forming a bottle-shaped trench.
摘要:
A method for forming bottle trenches. The method comprises providing a substrate formed with a pad stack layer on the top, and a deep trench with protective layer on the upper portions of sidewalls thereof, implanting ions into the lower portions of sidewalls and bottom of the trench not covered by the protective layer to amorphize the atomic structure of the sidewalls and bottom, oxidizing the amorphous sidewalls and bottom of the trench to form a bottle-shaped oxide layer thereon, and removing the bottle-shaped oxide layer.
摘要:
A method of patterning a metal alloy material layer having hafnium and molybdenum. The method includes forming a patterned mask layer on a metal alloy material layer having hafnium and molybdenum on a substrate. The patterned mask layer is used as a mask and an etching process is performed using an etchant on the metal alloy material layer having hafnium and molybdenum so as to form a metal alloy layer having hafnium and molybdenum. The etchant includes at least nitric acid, hydrofluoric acid and sulfuric acid. The patterned mask layer is removed.
摘要:
A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.
摘要:
A transistor includes a gate structure of HfMoN. The work function of the gate structure can be modulated by doping the HfMoN with dopants including nitride, silicon or germanium. The gate structure of HfMoN of the present invention is applicable to PMOS, NMOS or CMOS transistors.
摘要:
An etchant for etching a metal alloy having hafnium and molybdenum includes 20 to 80 percent by weight of nitric acid, 1 to 49 percent by weight of hydrofluoric acid, 1 to 96 percent by weight of sulfuric acid, and 1 to 30 percent by weight of water, based on the total weight of the etchant.
摘要:
A conductive through connection having a body layer and a metal layer is disposed on a semiconductor device, which the metal layer is on a top of body layer and includes a conductive body configured to penetrate the body layer and the metal layer. The width/diameter of one end of the conductive body is larger than that of another end thereof. The shape of these two ends of the body layer can be rectangular or circular.