公开(公告)号：US06486557B1

公开(公告)日：2002-11-26

申请号：US09515110

申请日：2000-02-29

申请人： Charles R. Davis ,  Daniel Charles Edelstein ,  John C. Hay ,  Jeffrey C. Hedrick ,  Christopher Jahnes ,  Vincent McGahay ,  Henry A. Nye, III

发明人： Charles R. Davis ,  Daniel Charles Edelstein ,  John C. Hay ,  Jeffrey C. Hedrick ,  Christopher Jahnes ,  Vincent McGahay ,  Henry A. Nye, III

IPC分类号： H01L2348

CPC分类号： H01L21/76808 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multi-level, coplanar copper damascene interconnect structure on an integrated circuit chip includes a first planar interconnect layer on an integrated circuit substrate and having plural line conductors separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A second planar interconnect layer on the first planar interconnect layer comprises a dielectric film having an elastic modulus higher than in the first planar interconnect layer and conductive vias therethrough. The vias are selectively in contact with the line conductors. A third planar interconnect layer on the second planar interconnect layer has plural line conductors separated by the dielectric material and selectively in contact with the vias.

摘要翻译： 集成电路芯片上的多层共面铜镶嵌互连结构包括在集成电路基板上的第一平面互连层，并且具有由具有相对较低的介电常数和相对低的弹性模量的介电材料隔开的多个线导体。 第一平面互连层上的第二平面互连层包括具有高于第一平面互连层的弹性模量和通过其的导电通孔的电介质膜。 通孔选择性地与线路导体接触。 第二平面互连层上的第三平面互连层具有被电介质材料隔开并选择性地与通孔接触的多个线导体。

公开(公告)号：US07081673B2

公开(公告)日：2006-07-25

申请号：US10648884

申请日：2003-08-27

申请人： Jeffrey C. Hedrick ,  Elbert E. Huang

发明人： Jeffrey C. Hedrick ,  Elbert E. Huang

IPC分类号： H01L23/48

CPC分类号： H01L21/022 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/314 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76844 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Structures having low-k multilayered dielectric diffusion barrier layer having at least one low-k sublayer and at least one air barrier sublayer are described herein. The multilayered dielectric diffusion barrier layer are diffusion barriers to metal and barriers to air permeation. Methods and compositions relating to the generation of the structures are also described. The advantages of utilizing these low-k multilayered dielectric diffusion barrier layer is a gain in chip performance through a reduction in capacitance between conducting metal features and an increase in reliability as the multilayered dielectric diffusion barrier layer are impermeable to air and prevent metal diffusion.

摘要翻译： 本文描述了具有至少一个低k​​子层和至少一个空气阻挡子层的具有低k多层介电扩散阻挡层的结构。 多层电介质扩散阻挡层是对金属的扩散屏障和空气渗透屏障。 还描述了与生成结构有关的方法和组合物。 利用这些低k多层介质扩散阻挡层的优点是通过降低导电金属特性之间的电容并且随着多层电介质扩散阻挡层对空气不透气并防止金属扩散而增加可靠性，可以提高芯片性能。

公开(公告)号：US06864180B2

公开(公告)日：2005-03-08

申请号：US09969363

申请日：2001-10-02

申请人： Darryl D. Restaino ,  Delores Bennett ,  John A. Fitzsimmons ,  John Fritche ,  Jeffrey C. Hedrick ,  Chih-Chien Liu ,  Shahab Siddiqui ,  Christy S. Tyberg

发明人： Darryl D. Restaino ,  Delores Bennett ,  John A. Fitzsimmons ,  John Fritche ,  Jeffrey C. Hedrick ,  Chih-Chien Liu ,  Shahab Siddiqui ,  Christy S. Tyberg

IPC分类号： H01L21/311

CPC分类号： H01L21/31138 ,  H01L21/31111

摘要： A method for removing a dielectric layer formed upon a semiconductor substrate is disclosed. In an exemplary embodiment of the invention, the method includes subjecting the dielectric layer to a dry etch process and subjecting an adhesion promoter layer underneath the dielectric layer to a wet etch process.

摘要翻译： 公开了一种去除在半导体衬底上形成的电介质层的方法。 在本发明的示例性实施例中，该方法包括对介电层进行干蚀刻工艺，并对介电层下面的粘附促进剂层进行湿蚀刻工艺。

公开(公告)号：US5541567A

公开(公告)日：1996-07-30

申请号：US323554

申请日：1994-10-17

申请人： Keith E. Fogel ,  Jeffrey C. Hedrick ,  David A. Lewis ,  Eva E. Simonyi ,  Alfred Viehbeck ,  Stanley J. Whitehair

发明人： Keith E. Fogel ,  Jeffrey C. Hedrick ,  David A. Lewis ,  Eva E. Simonyi ,  Alfred Viehbeck ,  Stanley J. Whitehair

IPC分类号： H01F17/00 ,  H05K1/05 ,  H05K3/40 ,  H05K3/44 ,  H01F5/00 ,  H05K1/16

CPC分类号： H05K3/445 ,  H01F17/0006 ,  H05K1/056 ,  H05K2201/09636 ,  H05K2201/09881 ,  H05K2201/10416 ,  H05K3/4046

摘要： Structures are described having vias with more than one electrical conductor at least one of which is a solid conductor which is formed by inserting the wire into the via in a substrate wherein the wire is attached to an electrically conductive plate which is spaced apart from the substrate by a spacer which leave a space between the substrate and plate. The space is filled with a dielectric material. The space with via between the conductor and via sidewall is filled with a dielectric material. The via is used for making transformers and inductors wherein one of the via conductors is used for inner windings and another of the via conductors is used for outer windings.

摘要翻译： 描述了具有多于一个电导体的通孔的结构，其中至少一个电导体是通过将电线插入基板中的通孔而形成的实心导体，其中导线附接到与基板间隔开的导电板 通过在基板和板之间留下空隙的间隔件。 该空间填充有电介质材料。 在导体和通孔侧壁之间具有通孔的空间填充有电介质材料。 通孔用于制造变压器和电感器，其中通孔导体之一用于内部绕组，另一个通孔导体用于外部绕组。

公开(公告)号：USRE45781E1

公开(公告)日：2015-10-27

申请号：US14176526

申请日：2014-02-10

申请人： Jeffrey C. Hedrick ,  Kang-Wook Lee ,  Kelly Malone ,  Christy S. Tyberg

发明人： Jeffrey C. Hedrick ,  Kang-Wook Lee ,  Kelly Malone ,  Christy S. Tyberg

IPC分类号： H01L21/02 ,  H01L23/532 ,  H01L21/70 ,  H01L23/52 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/22

CPC分类号： H01L21/22 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： A structure useful for electrical interconnection comprises a substrate; a plurality of porous dielectric layers disposed on the substrate; an etch stop layer disposed between a first of the dielectric layers and a second of the dielectric layers; and at least one thin, tough, non-porous dielectric layer disposed between at least one of the porous dielectric layers and the etch stop layer. A method for forming the structure comprising forming a multilayer stack of porous dielectric layers on the substrate, the stack including the plurality of porous dielectric layers, and forming a plurality of patterned metal conductors within the multilayer stack. Curing of the multilayer dielectric stack may be in a single cure step in a furnace. The application and hot plate baking of the individual layers of the multi layer dielectric stack may be accomplished in a single spin-coat tool, without being removed, to fully cure the stack until all dielectric layers have been deposited.

摘要翻译： 用于电互连的结构包括：基底; 设置在所述基板上的多个多孔介电层; 设置在第一电介质层和第二介电层之间的蚀刻停止层; 以及设置在至少一个多孔电介质层和蚀刻停止层之间的至少一个薄的，韧性的无孔介电层。 一种用于形成所述结构的方法，包括在所述衬底上形成多层介电层的多层堆叠，所述堆叠包括所述多个多孔介电层，以及在所述多层堆叠内形成多个图案化的金属导体。 多层电介质堆叠的固化可以在炉中的单一固化步骤中。 多层电介质堆叠的各层的应用和热板烘烤可以在单个旋涂工具中实现，而不被去除，以完全固化堆叠，直到所有电介质层已经沉积。

公开(公告)号：US06638878B2

公开(公告)日：2003-10-28

申请号：US09969361

申请日：2001-10-02

申请人： Darryl D. Restaino ,  Jeffrey C. Hedrick ,  John A. Fitzsimmons ,  Christy S. Tyberg ,  Chih-Chien Liu ,  Shahab Siddiqui

发明人： Darryl D. Restaino ,  Jeffrey C. Hedrick ,  John A. Fitzsimmons ,  Christy S. Tyberg ,  Chih-Chien Liu ,  Shahab Siddiqui

IPC分类号： H01L21461

CPC分类号： H01L21/02304 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/312 ,  Y10T428/29 ,  Y10T428/31504

摘要： A method for forming a planarized dielectric layer upon a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes applying an adhesion promoter to the wafer, thereby forming an adhesion promoter layer. A dielectric material is applied in a spin-on fashion upon the adhesion promoter layer at a relative humidity of less than 40% and for a thickness setting duration of less than 30 seconds. Then, the dielectric material is dried by baking without additional spinning of the semiconductor wafer.

摘要翻译： 公开了一种在半导体晶片上形成平坦化电介质层的方法。 在本发明的一个示例性实施方案中，该方法包括将粘合促进剂施加到晶片上，从而形成粘附促进剂层。 将介电材料以相对湿度小于40％并且厚度设定持续时间小于30秒以旋涂方式施加到粘合促进剂层上。 然后，通过烘烤干燥电介质材料，而不需要半导体晶片的额外纺丝。

公开(公告)号：US5919596A

公开(公告)日：1999-07-06

申请号：US798592

申请日：1997-02-11

申请人： Jeffrey C. Hedrick ,  Konstantinos Papathomas ,  Stephen L. Tisdale ,  Alfred Viehbeck ,  Jeffrey D. Gelorme ,  Voya Rista Markovich ,  Thomas H. Lewis ,  Stephen Joseph Fuerniss

发明人： Jeffrey C. Hedrick ,  Konstantinos Papathomas ,  Stephen L. Tisdale ,  Alfred Viehbeck ,  Jeffrey D. Gelorme ,  Voya Rista Markovich ,  Thomas H. Lewis ,  Stephen Joseph Fuerniss

IPC分类号： G03F7/027 ,  C08L79/00 ,  G03F7/029 ,  G03F7/38 ,  H01L21/027 ,  G03F7/26

CPC分类号： G03F7/38 ,  Y10S430/106

摘要： Disclosed is an admixture which is curable to form a crack resistant, photosensitive polycyanurate resist. Also disclosed is a structure for its use and process of making. The resist can be tailored to be either positively or negatively sensitive to actinic radiation. Because of its improved thermal and mechanical properties, the cured resist is suitable for use at high temperature, such as in electronic packaging applications.

摘要翻译： 公开了一种可固化以形成耐裂纹的光敏聚氰化脲抗蚀剂的混合物。 还公开了其使用和制造过程的结构。 抗蚀剂可以被定制为对光化辐射是积极或消极敏感的。 由于其热和机械性能的改善，固化的抗蚀剂适合在高温下使用，例如在电子封装应用中。

公开(公告)号：US5591285A

公开(公告)日：1997-01-07

申请号：US475670

申请日：1995-07-24

申请人： Ali Afzali-Ardakani ,  Juan Ayala-Esquilin ,  Bodil E. Braren ,  Shahrokh Daijavad ,  Elizabeth Foster ,  James L. Hedrick, Jr. ,  Jeffrey C. Hedrick ,  Rodney T. Hodgson ,  Ashit A. Mehta ,  Steven E. Molis ,  Jane M. Shaw ,  Stephen L. Tisdale ,  Alfred Viehbeck

发明人： Ali Afzali-Ardakani ,  Juan Ayala-Esquilin ,  Bodil E. Braren ,  Shahrokh Daijavad ,  Elizabeth Foster ,  James L. Hedrick, Jr. ,  Jeffrey C. Hedrick ,  Rodney T. Hodgson ,  Ashit A. Mehta ,  Steven E. Molis ,  Jane M. Shaw ,  Stephen L. Tisdale ,  Alfred Viehbeck

IPC分类号： C08J7/00 ,  C08K3/04 ,  C08K9/02 ,  H01B3/30 ,  H01L21/312 ,  H05K1/03 ,  H05K3/10 ,  B32B31/28 ,  B32B27/16

CPC分类号： H05K1/0373 ,  C08K3/04 ,  C08K9/02 ,  H05K1/0346 ,  H05K2201/0154 ,  H05K2201/0239 ,  H05K2201/0323 ,  H05K2201/068 ,  H05K3/105 ,  Y10T428/31544

摘要： Disclosed are structures comprising a composite of fluorinated particulate carbon dispersed in a polymer, the fluorinated carbon being present in an amount sufficient to reduce the dielectric constant of the composition, the structure also including electrical conductor patterns.The composite can be made conductive by irradiating it with an UV excimer laser.

摘要翻译： 公开了包含分散在聚合物中的氟化颗粒碳的复合物的结构，氟化碳的存在量足以降低组合物的介电常数，该结构还包括电导体图案。 可以通过用UV准分子激光器照射该复合材料来导电。

公开(公告)号：US5536921A

公开(公告)日：1996-07-16

申请号：US548262

申请日：1995-10-25

申请人： Jeffrey C. Hedrick ,  David A. Lewis ,  Jane M. Shaw ,  Alfred Viehbeck ,  Stanley J. Whitehair

发明人： Jeffrey C. Hedrick ,  David A. Lewis ,  Jane M. Shaw ,  Alfred Viehbeck ,  Stanley J. Whitehair

IPC分类号： H05B6/80 ,  H05B6/62 ,  H05B6/78

CPC分类号： H05B6/788

摘要： A microwave processing system is provided wherein the material to be processed is in the form of a web type quantity configuration with a thickness that is small in relation to the wavelength of a particular microwave frequency. The material is passed through the field associated with a plurality of microwave standing waves of the particular frequency, each adjacent standing wave being offset 1/4 wavelength along the direction of movement of the web. A carrier gas removes volatile solvents from the material surfaces. Control is provided for the interrelationship of temperature, rate of movement, flow of carrier gas, and microwave power.

摘要翻译： 提供了一种微波处理系统，其中待处理的材料是相对于特定微波频率的波长具有较小厚度的幅材类型数量构型的形式。 材料通过与特定频率的多个微波驻波相关联的场，每个相邻驻波沿着幅材的移动方向偏移1/4波长。 载气从材料表面除去挥发性溶剂。 提供温度，运动速率，载气流量和微波功率的相互关系的控制。

公开(公告)号：US5397863A

公开(公告)日：1995-03-14

申请号：US929313

申请日：1992-08-13

申请人： Ali Afzali-Ardakani ,  Juan Ayala-Esquilin ,  Bodil E. Braren ,  Shahrokh Daijavad ,  Elizabeth Foster ,  James L. Hedrick, Jr. ,  Jeffrey C. Hedrick ,  Rodney T. Hodgson ,  Ashit A. Mehta ,  Steven E. Molis ,  Jane M. Shaw ,  Stephen L. Tisdale ,  Alfred Viehbeck

发明人： Ali Afzali-Ardakani ,  Juan Ayala-Esquilin ,  Bodil E. Braren ,  Shahrokh Daijavad ,  Elizabeth Foster ,  James L. Hedrick, Jr. ,  Jeffrey C. Hedrick ,  Rodney T. Hodgson ,  Ashit A. Mehta ,  Steven E. Molis ,  Jane M. Shaw ,  Stephen L. Tisdale ,  Alfred Viehbeck

IPC分类号： C08J7/00 ,  C08K3/04 ,  C08K9/02 ,  H01B3/30 ,  H01L21/312 ,  H05K1/03 ,  H05K3/10

CPC分类号： H05K1/0373 ,  C08K3/04 ,  C08K9/02 ,  H05K1/0346 ,  H05K2201/0154 ,  H05K2201/0239 ,  H05K2201/0323 ,  H05K2201/068 ,  H05K3/105 ,  Y10T428/31544

摘要： Disclosed are structures comprising a composite of fluorinated particulate carbon dispersed in a polymer, the fluorinated carbon being present in an amount sufficient to reduce the dielectric constant of the composition, the structure also including electrical conductor patterns. The composite can be made conductive by irradiating it with an UV excimer laser.

摘要翻译： 公开了包含分散在聚合物中的氟化颗粒碳的复合物的结构，氟化碳的存在量足以降低组合物的介电常数，该结构还包括电导体图案。 可以通过用UV准分子激光器照射该复合材料来导电。