利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.023 秒)

    Planar avalanche photodiode
    1.
    发明授权
    Planar avalanche photodiode 有权
    平面雪崩光电二极管

    公开(公告)号：US07348608B2

    公开(公告)日：2008-03-25

    申请号：US10836878

    申请日：2004-04-30

    申请人： Cheng C. Ko ,  Barry Levine

    发明人： Cheng C. Ko ,  Barry Levine

    IPC分类号： H01L29/732

    CPC分类号： H01L31/1075 ,  H01L31/035281 ,  Y02E10/50

    摘要： A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the two contact areas and a semiconductor absorption layer is positioned between the multiplication layer and the upper contact layer. The photodiode has a low capacitance and a low field near the edges of the semiconductor multiplication and absorption layers.

    摘要翻译： 平面雪崩光电二极管包括通过扩散或蚀刻工艺产生的器件的顶部上的小的局部接触层和限定较低接触面积的半导体层。 半导体倍增层位于两个接触区域之间，半导体吸收层位于倍增层和上接触层之间。 光电二极管在半导体乘法吸收层的边缘附近具有低电容和低电场。

    Planar avalanche photodiode
    2.
    发明授权
    Planar avalanche photodiode 有权
    平面雪崩光电二极管

    公开(公告)号：US07348607B2

    公开(公告)日：2008-03-25

    申请号：US10502110

    申请日：2003-02-03

    申请人： Cheng C. Ko ,  Barry Levine

    发明人： Cheng C. Ko ,  Barry Levine

    IPC分类号： H01L29/732

    CPC分类号： H01L31/1075 ,  H01L31/035281 ,  Y02E10/50

    摘要： The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer, and a p-type contact layer. Further embodiments include a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer and a p-type semiconductor layer electrically coupled to a p-type contact layer.

    摘要翻译： 本发明包括具有限定平面接触面积的第一n型半导体层的平面雪崩光电二极管和具有p型扩散区域的第二n型半导体层。 该结构的其它特征包括n型半导体倍增层，n型半导体吸收层和p型接触层。 另外的实施例包括具有限定平面接触面积的第一n型半导体层的平面雪崩光电二极管，n型半导体倍增层，n型半导体吸收层和与p型电耦合的p型半导体层 接触层。

    Pin photodetector with mini-mesa contact layer
    3.
    发明授权
    Pin photodetector with mini-mesa contact layer 有权
    带微型台面接触层的针式光电探测器

    公开(公告)号：US07468503B2

    公开(公告)日：2008-12-23

    申请号：US10555144

    申请日：2004-04-30

    申请人： Cheng C. Ko ,  Barry Levine

    发明人： Cheng C. Ko ,  Barry Levine

    IPC分类号： H01L31/00

    CPC分类号： H01L31/105 ,  H01L31/02161 ,  H01L31/03046 ,  Y02E10/544

    摘要： A PIN photodetector includes a first semiconductor contact layer, a semiconductor absorption layer having a larger area than the first semiconductor contact layer, a semiconductor passivation layer positioned between the first semiconductor contact layer and absorption layer, and a second semiconductor contact layer. The semiconductor absorption layer and passivation layers are positioned between the first and second semiconductor contact layers.

    摘要翻译： PIN光检测器包括第一半导体接触层，具有比第一半导体接触层更大的面积的半导体吸收层，位于第一半导体接触层和吸收层之间的半导体钝化层和第二半导体接触层。 半导体吸收层和钝化层位于第一和第二半导体接触层之间。

    Enhanced photodetector
    4.
    发明授权
    Enhanced photodetector 有权
    增强型光电探测器

    公开(公告)号：US07078741B2

    公开(公告)日：2006-07-18

    申请号：US10502109

    申请日：2003-02-03

    申请人： Cheng C. Ko ,  Barry Levine

    发明人： Cheng C. Ko ,  Barry Levine

    IPC分类号： H01L31/109

    CPC分类号： H01L31/105 ,  H01L31/03042 ,  H01L31/102 ,  Y02E10/544

    摘要： The present invention includes a photodiode having a first p-type semiconductor layer and an n-type semiconductor layer coupled by a second p-type semiconductor layer. The second p-type semiconductor layer has graded doping along the path of the carriers. In particular, the doping is concentration graded from a high value near the anode to a lower p concentration towards the cathode. By grading the doping in this way, an increase in absorption is achieved, improving the responsivity of the device. Although this doping increases the capacitance relative to an intrinsic semiconductor of the same thickness, the pseudo electric field that is created by the graded doping gives the electrons a very high velocity which more than compensates for this increased capacitance.

    摘要翻译： 本发明包括具有第一p型半导体层和通过第二p型半导体层耦合的n型半导体层的光电二极管。 第二p型半导体层沿载流子的路径分级掺杂。 特别地，掺杂是从阳极附近的高值到朝向阴极的较低p浓度的浓度。 通过以这种方式对掺杂进行分级，实现了吸收的增加，提高了器件的响应度。 虽然这种掺杂相对于相同厚度的本征半导体增加了电容，但是由渐变掺杂产生的伪电场给予电子非常高的速度，这大大地补偿了这种增加的电容。