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    Implant beam utilization in an ion implanter
    1.
    发明授权
    Implant beam utilization in an ion implanter 有权
    植入物束在离子注入机中的利用

    公开(公告)号：US07772571B2

    公开(公告)日：2010-08-10

    申请号：US11868851

    申请日：2007-10-08

    申请人： Cheng-Hui Shen ,  Donald Wayne Berrian ,  Jiong Chen

    发明人： Cheng-Hui Shen ,  Donald Wayne Berrian ,  Jiong Chen

    IPC分类号： G21K5/10 ,  H01J37/08 ,  A61N5/00 ,  G21G5/00 ,  G06F19/00

    CPC分类号： G21K5/10 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/20228 ,  H01J2237/31703 ,  H01L21/68764

    摘要： To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.

    摘要翻译： 为了选择用于用植入物束扫描晶片的扫描距离，基于植入物束的尺寸或强度以及扫描距离来计算沿着第一方向的剂量分布。 扫描距离是在多条路径中沿着第二方向扫描晶片的植入光束的第一路径和最终路径之间的第一方向上测量的距离。 基于剂量分布确定沿着第二方向的相对速度分布。 基于使用相对速度分布和确定的剂量分布扫描的晶片来计算晶片上的剂量均匀性。 调整扫描距离，并重复前述步骤，直到计算的剂量均匀性满足一个或多个均匀性标准。

    IMPLANT BEAM UTILIZATION IN AN ION IMPLANTER
    2.
    发明申请
    IMPLANT BEAM UTILIZATION IN AN ION IMPLANTER 有权
    在离子植入物中的植入物束的利用

    公开(公告)号：US20090090876A1

    公开(公告)日：2009-04-09

    申请号：US11868851

    申请日：2007-10-08

    申请人： Cheng-Hui Shen ,  Donald Wayne Berrian ,  Jiong Chen

    发明人： Cheng-Hui Shen ,  Donald Wayne Berrian ,  Jiong Chen

    IPC分类号： G21K5/10

    CPC分类号： G21K5/10 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/20228 ,  H01J2237/31703 ,  H01L21/68764

    摘要： To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.

    摘要翻译： 为了选择用于用植入物束扫描晶片的扫描距离，基于植入物束的尺寸或强度以及扫描距离来计算沿着第一方向的剂量分布。 扫描距离是在多条路径中沿着第二方向扫描晶片的植入光束的第一路径和最终路径之间的第一方向上测量的距离。 基于剂量分布确定沿着第二方向的相对速度分布。 基于使用相对速度分布和确定的剂量分布扫描的晶片计算晶片上的剂量均匀性。 调整扫描距离，并重复前述步骤，直到计算的剂量均匀性满足一个或多个均匀性标准。

    Shorten Temperature Recovery Time of Low Temperature Ion Implantation
    5.
    发明申请
    Shorten Temperature Recovery Time of Low Temperature Ion Implantation 审中-公开
    缩短低温离子植入的温度恢复时间

    公开(公告)号：US20100301236A1

    公开(公告)日：2010-12-02

    申请号：US12472316

    申请日：2009-05-26

    申请人： Shih-Yung Shieh ,  Cheng-Hui Shen

    发明人： Shih-Yung Shieh ,  Cheng-Hui Shen

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3171 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01L21/265

    摘要： The present invention discloses a low temperature ion implantation by performing a heating process after the end of an implanting process and before the wafer is moved into the external environment. This invention actively raises wafer temperature at a time no later than implementation of the vacuum venting process, such that the condensed moisture induced by the temperature difference between a vacuum environment inside ion implanter and an external environment outside ion implanter is effectively minimized. The wafer can be heated at a loadlock, a robot for transferring wafer and/or an implantation chamber. The wafer can be heated by a gas, a liquid, a light and/or a heater embedded in a holder for holding the wafer.

    摘要翻译： 本发明公开了一种低温离子注入，通过在植入过程结束之后并且在晶片移动到外部环境中之前执行加热过程。 本发明在不迟于实施真空排气过程的时候主动地提高晶片温度，使得离子注入机内的真空环境和离子注入机外部的外部环境之间的温度差引起的冷凝水分被有效地最小化。 可以在负载锁上加热晶片，用于传送晶片和/或注入室的机器人。 可以通过嵌入在用于保持晶片的保持器中的气体，液体，光和/或加热器来加热晶片。

    Keyswitch and keyboard including the same
    6.
    发明授权
    Keyswitch and keyboard including the same 有权
    钥匙开关和键盘包括相同

    公开(公告)号：US08975547B2

    公开(公告)日：2015-03-10

    申请号：US13612202

    申请日：2012-09-12

    申请人： Cheng-Hui Shen

    发明人： Cheng-Hui Shen

    IPC分类号： H01H13/70

    CPC分类号： H01H3/125

    摘要： A keyswitch, disposed on a base plate, includes a keycap and a scissors-like supporting structure. The scissors-like supporting structure is disposed on the base plate and supports the keycap. The scissors-like supporting structure includes a first supporting member and a second supporting member. The first supporting member includes a first engaging shaft and a second engaging shaft respectively engaged with the base plate and the keycap. The second supporting member is pivotally connected to the first supporting member and includes a third engaging shaft and a fourth engaging shaft respectively engaged with the base plate and the keycap. A line connected between the centers of gravity of the first and second engaging shaft is not perpendicular to the first and second engaging shaft. A line connected between the centers of gravity of the third and fourth engaging shaft is not perpendicular to the third and fourth engaging shaft.

    摘要翻译： 设置在基板上的钥匙开关包括键帽和剪刀状支撑结构。 剪刀状支撑结构设置在基板上并支撑键帽。 剪刀状支撑结构包括第一支撑构件和第二支撑构件。 第一支撑构件包括分别与基板和键帽接合的第一接合轴和第二接合轴。 第二支撑构件枢转地连接到第一支撑构件，并且包括分别与基板和键帽接合的第三接合轴和第四接合轴。 连接在第一和第二接合轴的重心之间的线不垂直于第一和第二接合轴。 连接在第三和第四接合轴的重心之间的线不垂直于第三和第四接合轴。

    Method and apparatus for uniformly implanting a wafer with an ion beam
    7.
    发明授权
    Method and apparatus for uniformly implanting a wafer with an ion beam 有权
    用离子束均匀注入晶片的方法和装置

    公开(公告)号：US08168962B2

    公开(公告)日：2012-05-01

    申请号：US12539558

    申请日：2009-08-11

    申请人： Cheng-Hui Shen ,  Don Berrian

    发明人： Cheng-Hui Shen ,  Don Berrian

    IPC分类号： G21G1/00

    CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/31701

    摘要： Initially, an ion beam is formed as an elongated shape incident on a wafer, where the shape has a length along a first axis longer than a diameter of the wafer, and a width along a second axis shorter than the diameter of the wafer. Then, a center of the wafer is moved along a scan path intersecting the ion beam at a movement velocity, and the wafer is rotated around at a rotation velocity simultaneously. During the simultaneous movement and rotation, the wafer is totally overlapped with the ion beam along the first axis when the wafer intersects with the ion beam, and the rotation velocity is at most a few times of the movement velocity. Both the movement velocity and the rotation velocity can be a constant or have a velocity profile relative to a position of the ion beam across the wafer.

    摘要翻译： 最初，离子束形成为入射在晶片上的细长形状，其中形状具有长于晶片直径的第一轴的长度，以及沿着比晶片直径短的第二轴的宽度。 然后，晶片的中心以与移动速度相交的扫描路径移动，并且晶片以旋转速度同时旋转。 在同时移动和旋转期间，当晶片与离子束相交时，晶片与离子束完全重叠，并且旋转速度至多为移动速度的几倍。 移动速度和旋转速度都可以是恒定的，或者具有相对于跨越晶片的离子束的位置的速度分布。

    Ion implantation method
    8.
    发明授权
    Ion implantation method 有权
    离子注入法

    公开(公告)号：US07683350B2

    公开(公告)日：2010-03-23

    申请号：US12126335

    申请日：2008-05-23

    申请人： Cheng-Hui Shen

    发明人： Cheng-Hui Shen

    IPC分类号： H01J37/317 ,  H01J37/08 ,  H01L21/265 ,  G21K5/00

    CPC分类号： H01J37/1474 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/15 ,  H01J2237/20214 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/31706 ,  H01L21/265

    摘要： An ion implantation method is provided. The method, before ion implanting, is to rotate the substrate by an angle and shift the scan path of the ion beam with an interlace pitch in the direction perpendicular to the scan direction and on the plane of the substrate. Therefore a plurality of interlaced and not overlapped ion implantation scan lines are formed on the surface of the substrate, so the method can enhance the uniformity of the dose of the ion implantation in the substrate.

    摘要翻译： 提供离子注入方法。 离子注入之前的方法是将衬底旋转一定角度，并且以垂直于扫描方向的方向和衬底的平面上的隔行间距移动离子束的扫描路径。 因此，在衬底的表面上形成多个交错且不重叠的离子注入扫描线，因此该方法可以增强衬底中离子注入的剂量的均匀性。

    DETERMINING RELATIVE SCAN VELOCITY TO CONTROL ION IMPLANTATION OF WORK PIECE
    9.
    发明申请
    DETERMINING RELATIVE SCAN VELOCITY TO CONTROL ION IMPLANTATION OF WORK PIECE 审中-公开
    确定相对扫描速度来控制工件的植入

    公开(公告)号：US20120196047A1

    公开(公告)日：2012-08-02

    申请号：US13016912

    申请日：2011-01-28

    申请人： Cheng-Hui Shen ,  Zhimin Wan

    发明人： Cheng-Hui Shen ,  Zhimin Wan

    IPC分类号： C23C14/48 ,  G06G7/62 ,  G06F17/10 ,  B05C11/00

    CPC分类号： H01J37/3171 ,  H01J2237/304 ,  H01J2237/31703

    摘要： To select a relative velocity profile to be used in scanning an actual work piece with an ion implant beam of an ion implantation tool, the implantation of a virtual work piece is simulated. A dose distribution is calculated across the virtual work piece based on an implant beam profile and a relative velocity profile. A new relative velocity profile is then determined based on the calculated dose distribution and the relative velocity profile used in calculating the dose distribution. A new dose distribution is then calculated using the new relative velocity profile. A new relative velocity profile is determined and a corresponding new dose distribution is calculated iteratively until the new dose distribution meets one or more predetermined criteria. The new relative velocity profile is stored as the selected relative velocity profile when the new dose distribution meets the one or more predetermined criteria.

    摘要翻译： 为了选择用离子注入工具的离子注入光束扫描实际工件所使用的相对速度分布，模拟了虚拟工件的注入。 基于植入物轮廓和相对速度分布，跨虚拟工件计算剂量分布。 然后基于计算的剂量分布和用于计算剂量分布的相对速度分布来确定新的相对速度分布。 然后使用新的相对速度分布计算新的剂量分布。 确定新的相对速度分布，并且迭代地计算相应的新剂量分布，直到新的剂量分布满足一个或多个预定标准。 当新剂量分布满足一个或多个预定标准时，新的相对速度分布被存储为所选择的相对速度分布。

    Ion implanter and method for implanting a wafer
    10.
    发明授权
    Ion implanter and method for implanting a wafer 有权
    离子注入机和植入晶片的方法

    公开(公告)号：US07750323B1

    公开(公告)日：2010-07-06

    申请号：US12465189

    申请日：2009-05-13

    申请人： Zhimin Wan ,  Cheng-Hui Shen ,  Ko-Chuan Jen

    发明人： Zhimin Wan ,  Cheng-Hui Shen ,  Ko-Chuan Jen

    IPC分类号： H01J37/317 ,  H01J37/08 ,  H01L21/265

    CPC分类号： H01J37/3172 ,  H01J37/3023 ,  H01J2237/043 ,  H01J2237/045 ,  H01J2237/30461 ,  H01J2237/30477 ,  H01J2237/30483

    摘要： An ion implanter and a method for implanting a wafer are provided, wherein the method includes the following steps. First, a wafer has at least a first portion requiring a first doping density and a second portion requiring a second doping density is provided. The first doping density is larger than the second doping density. Thereafter, the first portion is scanned by an ion beam with a first scanning parameter value, and the second portion is scanned by the ion beam with a second scanning parameter value. The first scanning parameter value can be a first scan velocity, and the second scanning parameter value can be a second scan velocity different than the first scan velocity. Alternatively, the first scanning parameter value can be a first beam current, and the second scanning parameter value can be a second beam current different than the first beam current.

    摘要翻译： 提供一种用于植入晶片的离子注入机和方法，其中该方法包括以下步骤。 首先，晶片至少具有需要第一掺杂密度的第一部分，并且提供需要第二掺杂密度的第二部分。 第一掺杂密度大于第二掺杂密度。 此后，通过具有第一扫描参数值的离子束扫描第一部分，并且用第二扫描参数值用离子束扫描第二部分。 第一扫描参数值可以是第一扫描速度，并且第二扫描参数值可以是不同于第一扫描速度的第二扫描速度。 或者，第一扫描参数值可以是第一束电流，并且第二扫描参数值可以是不同于第一束电流的第二束电流。