公开(公告)号：US20100061016A1

公开(公告)日：2010-03-11

申请号：US12231756

申请日：2008-09-05

申请人： Cherng-Chyi Han ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Han ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

公开(公告)号：US20120012555A1

公开(公告)日：2012-01-19

申请号：US13200305

申请日：2011-09-22

申请人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

公开(公告)号：US08345383B2

公开(公告)日：2013-01-01

申请号：US13200305

申请日：2011-09-22

申请人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

公开(公告)号：US08031433B2

公开(公告)日：2011-10-04

申请号：US12231756

申请日：2008-09-05

申请人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

发明人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

公开(公告)号：US20120281313A1

公开(公告)日：2012-11-08

申请号：US13554275

申请日：2012-07-20

申请人： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

发明人： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

IPC分类号： G11B5/187

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/3163

摘要： A PMR writer with a tapered main pole layer and tapered non-magnetic top-shaping layer is disclosed that minimizes trailing shield saturation. A second non-magnetic top shaping layer may be employed to reduce the effective TH size while the bulk of the trailing shield is thicker to allow a larger process window for back end processing. A sloped surface with one end at the ABS and a second end 0.05 to 0.3 microns from the ABS is formed at a 10 to 80 degree angle to the ABS and includes a sloped surface on the upper portion of the main pole layer and on the non-magnetic top shaping layer. An end is formed on the second non-magnetic top shaping layer at the second end of the sloped surface followed by forming a conformal write gap layer and then depositing the trailing shield on the write gap layer and along the ABS.

摘要翻译： 公开了一种具有锥形主极层和锥形非磁性顶部成形层的PMR写入器，其使拖尾屏蔽饱和度最小化。 可以采用第二非磁性顶部成形层来减小有效的TH尺寸，同时尾部屏蔽的大部分较厚以允许用于后端处理的较大的工艺窗口。 在ABS处具有一端的倾斜表面和距离ABS的0.05至0.3微米的第二端与ABS形成10至80度的角度，并且包括在主极层的上部上的非倾斜表面， 磁顶成型层。 在倾斜表面的第二端处在第二非磁性顶部成形层上形成端部，随后形成共形写入间隙层，然后将后部屏蔽层沉积在写入间隙层上并沿着ABS。

公开(公告)号：US08238056B2

公开(公告)日：2012-08-07

申请号：US11982597

申请日：2007-11-02

申请人： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

发明人： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

IPC分类号： G11B5/23 ,  G11B5/31

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/3163

摘要： A PMR writer with a tapered main pole layer and tapered non-magnetic top-shaping layer is disclosed that minimizes trailing shield saturation. A second non-magnetic top shaping layer may be employed to reduce the effective TH size while the bulk of the trailing shield is thicker to allow a larger process window for back end processing. A sloped surface with one end at the ABS and a second end 0.05 to 0.3 microns from the ABS is formed at a 10 to 80 degree angle to the ABS and includes a sloped surface on the upper portion of the main pole layer and on the non-magnetic top shaping layer. An end is formed on the second non-magnetic top shaping layer at the second end of the sloped surface followed by forming a conformal write gap layer and then depositing the trailing shield on the write gap layer and along the ABS.

摘要翻译： 公开了一种具有锥形主极层和锥形非磁性顶部成形层的PMR写入器，其使拖尾屏蔽饱和度最小化。 可以采用第二非磁性顶部成形层来减小有效的TH尺寸，同时尾部屏蔽的大部分较厚以允许用于后端处理的较大的工艺窗口。 在ABS处具有一端的倾斜表面和距离ABS的0.05至0.3微米的第二端与ABS形成10至80度的角度，并且包括在主极层的上部上的非倾斜表面， 磁顶成型层。 在倾斜表面的第二端处在第二非磁性顶部成形层上形成端部，随后形成共形写入间隙层，然后将后部屏蔽层沉积在写入间隙层上并沿着ABS。

公开(公告)号：US20100301007A1

公开(公告)日：2010-12-02

申请号：US12457090

申请日：2009-06-01

申请人： Kazuo Ishizaki ,  Yoshitaka Sasaki ,  Hironori Araki ,  Hiroyuki Ito ,  Shigeki Tanemura ,  Cherng-Chyi Han

发明人： Kazuo Ishizaki ,  Yoshitaka Sasaki ,  Hironori Araki ,  Hiroyuki Ito ,  Shigeki Tanemura ,  Cherng-Chyi Han

IPC分类号： B44C1/22

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A magnetic head includes a pole layer, first and second side shields, and an encasing layer having first to third grooves that accommodate the pole layer and the first and second side shields. A manufacturing method for the magnetic head includes the step of forming the first to third grooves in a nonmagnetic layer by using an etching mask layer having first to third openings. This step includes the steps of forming the first groove by etching the nonmagnetic layer using the first opening, with the second and third openings covered with a first mask; and forming the second and third grooves by etching the nonmagnetic layer using the second and third openings, with the first opening covered with a second mask.

摘要翻译： 磁头包括极层，第一和第二侧屏蔽以及包含第一至第三沟槽的封装层，其容纳极层和第一和第二侧屏蔽。 磁头的制造方法包括通过使用具有第一至第三开口的蚀刻掩模层在非磁性层中形成第一至第三沟槽的步骤。 该步骤包括通过使用第一开口蚀刻非磁性层来形成第一凹槽的步骤，其中第二和第三开口被第一掩模覆盖; 以及通过使用所述第二和第三开口蚀刻所述非磁性层来形成所述第二和第三凹槽，其中所述第一开口被第二掩模覆盖。

公开(公告)号：US08379347B2

公开(公告)日：2013-02-19

申请号：US13554275

申请日：2012-07-20

申请人： Lijie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

发明人： Lijie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

IPC分类号： G11B5/31 ,  G11B5/23 ,  G11B5/11

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/3163

摘要： A PMR writer with a tapered main pole layer and tapered non-magnetic top-shaping layer is disclosed that minimizes trailing shield saturation. A second non-magnetic top shaping layer may be employed to reduce the effective TH size while the bulk of the trailing shield is thicker to allow a larger process window for back end processing. A sloped surface with one end at the ABS and a second end 0.05 to 0.3 microns from the ABS is formed at a 10 to 80 degree angle to the ABS and includes a sloped surface on the upper portion of the main pole layer and on the non-magnetic top shaping layer. An end is formed on the second non-magnetic top shaping layer at the second end of the sloped surface followed by forming a conformal write gap layer and then depositing the trailing shield on the write gap layer and along the ABS.

公开(公告)号：US08173028B2

公开(公告)日：2012-05-08

申请号：US12457090

申请日：2009-06-01

申请人： Kazuo Ishizaki ,  Yoshitaka Sasaki ,  Hironori Araki ,  Hiroyuki Ito ,  Shigeki Tanemura ,  Cherng-Chyi Han

发明人： Kazuo Ishizaki ,  Yoshitaka Sasaki ,  Hironori Araki ,  Hiroyuki Ito ,  Shigeki Tanemura ,  Cherng-Chyi Han

IPC分类号： G11B5/127

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A magnetic head includes a pole layer, first and second side shields, and an encasing layer having first to third grooves that accommodate the pole layer and the first and second side shields. A manufacturing method for the magnetic head includes the step of forming the first to third grooves in a nonmagnetic layer by using an etching mask layer having first to third openings. This step includes the steps of forming the first groove by etching the nonmagnetic layer using the first opening, with the second and third openings covered with a first mask; and forming the second and third grooves by etching the nonmagnetic layer using the second and third openings, with the first opening covered with a second mask.

摘要翻译： 磁头包括极层，第一和第二侧屏蔽以及包含第一至第三沟槽的封装层，其容纳极层和第一和第二侧屏蔽。 磁头的制造方法包括通过使用具有第一至第三开口的蚀刻掩模层在非磁性层中形成第一至第三沟槽的步骤。 该步骤包括通过使用第一开口蚀刻非磁性层来形成第一凹槽的步骤，其中第二和第三开口被第一掩模覆盖; 以及通过使用所述第二和第三开口蚀刻所述非磁性层来形成所述第二和第三凹槽，其中所述第一开口被第二掩模覆盖。

公开(公告)号：US20090116145A1

公开(公告)日：2009-05-07

申请号：US11982597

申请日：2007-11-02

申请人： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

发明人： Liejie Guan ,  Joe Smyth ,  Moris Dovek ,  Yoshitaka Sasaki ,  Cherng-Chyi Han

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/3163

摘要： A PMR writer with a tapered main pole layer and tapered non-magnetic top-shaping layer is disclosed that minimizes trailing shield saturation. A second non-magnetic top shaping layer may be employed to reduce the effective TH size while the bulk of the trailing shield is thicker to allow a larger process window for back end processing. A sloped surface with one end at the ABS and a second end 0.05 to 0.3 microns from the ABS is formed at a 10 to 80 degree angle to the ABS and includes a sloped surface on the upper portion of the main pole layer and on the non-magnetic top shaping layer. An end is formed on the second non-magnetic top shaping layer at the second end of the sloped surface followed by forming a conformal write gap layer and then depositing the trailing shield on the write gap layer and along the ABS.

摘要翻译： 公开了一种具有锥形主极层和锥形非磁性顶部成形层的PMR写入器，其使拖尾屏蔽饱和度最小化。 可以采用第二非磁性顶部成形层来减小有效的TH尺寸，同时尾部屏蔽的大部分较厚以允许用于后端处理的较大的工艺窗口。 在ABS处具有一端的倾斜表面和距离ABS的0.05至0.3微米的第二端与ABS形成10至80度的角度，并且包括在主极层的上部上的非倾斜表面， 磁顶成型层。 在倾斜表面的第二端处在第二非磁性顶部成形层上形成端部，随后形成共形写入间隙层，然后将后部屏蔽层沉积在写入间隙层上并沿着ABS。