公开(公告)号：US20080055787A1

公开(公告)日：2008-03-06

申请号：US11975955

申请日：2007-10-23

申请人： Cherng-Chyi Han ,  Laurie Lauchlan ,  Xiaomin Liu

发明人： Cherng-Chyi Han ,  Laurie Lauchlan ,  Xiaomin Liu

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/3163 ,  G11B5/1272 ,  G11B5/3116 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044

摘要： For high track density recording, tighter reader and writer track width control are essential. This has been achieved by using the write gap layer as the plating seed on which the upper pole was electro-formed so that the width of the GMR pedestal serves to define the device's write track width.

摘要翻译： 对于高轨道密度记录，更紧密的读写器轨道宽度控制是至关重要的。 这是通过使用写间隙层作为上电极电镀的电镀种子来实现的，使得GMR基座的宽度用于限定器件的写入轨道宽度。

公开(公告)号：US07293344B2

公开(公告)日：2007-11-13

申请号：US10886888

申请日：2004-07-08

申请人： Cherng-Chyi Han ,  Laurie Lauchlan ,  Xiaomin Liu

发明人： Cherng-Chyi Han ,  Laurie Lauchlan ,  Xiaomin Liu

IPC分类号： G11B5/127 ,  B44C1/22

CPC分类号： G11B5/3163 ,  G11B5/1272 ,  G11B5/3116 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A process for achieving tighter reader and writer track width control is disclosed. The write gap layer is used as the plating seed on which the upper pole is electro-formed. This allows the write gap layer to then be deposited through a precisely controllable process such as sputtering. Since less material needs to be removed during pole trimming, a thinner layer of photoresist may be used, resulting in improved dimensional control.

摘要翻译： 公开了一种实现更严格的读写器磁道宽度控制的过程。 写间隙层用作上电极电镀的电镀种子。 这允许写间隙层然后通过诸如溅射的精确控制的工艺进行沉积。 由于在极修整期间需要去除较少的材料，因此可以使用更薄的光致抗蚀剂层，从而改善尺寸控制。

公开(公告)号：US20060007602A1

公开(公告)日：2006-01-12

申请号：US10886888

申请日：2004-07-08

申请人： Cherng-Chyi Han ,  Laurie Lauchlan ,  Xiaomin Liu

发明人： Cherng-Chyi Han ,  Laurie Lauchlan ,  Xiaomin Liu

IPC分类号： G11B5/235 ,  G11B5/147 ,  G11B5/127 ,  G11B5/33

CPC分类号： G11B5/3163 ,  G11B5/1272 ,  G11B5/3116 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044

摘要： For high track density recording, tighter reader and writer track width control are essential. This has been achieved by using the write gap layer as the plating seed on which the upper pole is electro-formed. This allows the write gap layer to be deposited through a precisely controllable process such as sputtering. Since less material needs to be removed during pole trimming, a thinner layer of photoresist may be used. This, in turn, makes possible a lower CD for the structure.

摘要翻译： 对于高轨道密度记录，更紧密的读写器轨道宽度控制是至关重要的。 这是通过使用写间隙层作为上电极电镀的电镀种子来实现的。 这允许通过诸如溅射的精确控制的工艺来沉积写间隙层。 由于在极修整期间需要去除更少的材料，所以可以使用更薄的光致抗蚀剂层。 这反过来，使得结构的CD更低。

公开(公告)号：US07193814B2

公开(公告)日：2007-03-20

申请号：US10780514

申请日：2004-02-17

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Lei Zhang ,  Xiaomin Liu

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Lei Zhang ,  Xiaomin Liu

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3116 ,  Y10T29/49032 ,  Y10T29/49046

摘要： For high track density recording, tighter reader and writer track width control are essential. This has been achieved by using a plated NiPd write gap which is self-aligned with a plated 23 KG pole material. Heat dissipation by the writer is thus improved since alumina has been replaced with nonmagnetic metal materials, such as Ru, leading to less pole tip protrusion which in turn leads to better writer track width control

摘要翻译： 对于高轨道密度记录，更紧密的读写器轨道宽度控制是至关重要的。 这已经通过使用与电镀的23KG极材料自对准的镀NiPd写入间隙来实现。 因此，由于氧化铝被诸如Ru之类的非磁性金属材料所代替，导致作者的散热得到改善，导致较少的极尖突起，这又导致更好的写入器轨道宽度控制

公开(公告)号：US20050180049A1

公开(公告)日：2005-08-18

申请号：US10780514

申请日：2004-02-17

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Lei Zhang ,  Xiaomin Liu

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Lei Zhang ,  Xiaomin Liu

IPC分类号： G11B5/147 ,  G11B5/31

CPC分类号： G11B5/3116 ,  Y10T29/49032 ,  Y10T29/49046

摘要： For high track density recording, tighter reader and writer track width control are essential. This has been achieved by using a plated NiPd write gap which is self-aligned with a plated 23 KG pole material. Heat dissipation by the writer is thus improved since alumina has been replaced with nonmagnetic metal materials, such as Ru, leading to less pole tip protrusion which in turn leads to better writer track width control

摘要翻译： 对于高轨道密度记录，更紧密的读写器轨道宽度控制是至关重要的。 这已经通过使用与电镀的23KG极材料自对准的镀NiPd写入间隙来实现。 因此，由于氧化铝被诸如Ru之类的非磁性金属材料所代替，导致作者的散热得到改善，导致较少的极尖突起，这又导致更好的写入器轨道宽度控制

公开(公告)号：US08118990B2

公开(公告)日：2012-02-21

申请号：US11431261

申请日：2006-05-10

申请人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

发明人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

IPC分类号： C25D3/56

CPC分类号： C25D3/562 ,  C25D5/18 ,  G11B5/3163 ,  H01F41/26

摘要： A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.

摘要翻译： 描述了通过电沉积制造FexCoyNiz（x = 60-71，y = 25-35，z = 0-5）膜的方法，其具有以其沉积形式的至少24个饱和磁化强度 kG，矫顽力小于0.3 Oe。 一个关键的特征是在适当的种子层的同时向镀浴中加入芳基亚硫酸盐。

公开(公告)号：US20070261967A1

公开(公告)日：2007-11-15

申请号：US11431261

申请日：2006-05-10

申请人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

发明人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

IPC分类号： C25D3/56

CPC分类号： C25D3/562 ,  C25D5/18 ,  G11B5/3163 ,  H01F41/26

摘要： A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.

摘要翻译： 描述了通过电沉积制造Fe x Sb x Ni x Z x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x（x = 35，z = 0-5）具有其沉积形式的至少24kG的饱和磁化强度和小于0.3Oe的矫顽力的膜。 一个关键的特征是在适当的种子层的同时向镀浴中加入芳基亚硫酸盐。

公开(公告)号：US20120145551A1

公开(公告)日：2012-06-14

申请号：US13400389

申请日：2012-02-20

申请人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

发明人： Xiaomin Liu ,  Feiyue Li ,  Cherng-Chyi Han

IPC分类号： C25D5/18 ,  C25D7/00 ,  C23C28/00

CPC分类号： C25D3/562 ,  C25D5/18 ,  G11B5/3163 ,  H01F41/26

摘要： A process is described for the fabrication, through electrodeposition, of FexCoyNiz (x=60-71, y=25-35, z=0-5) films that have, in their as-deposited form, a saturation magnetization of at least 24 kG and a coercivity of less than 0.3 Oe. A key feature is the addition of aryl sulfinates to the plating bath along with a suitable seed layer.

摘要翻译： 描述了通过电沉积制造FexCoyNiz（x = 60-71，y = 25-35，z = 0-5）膜的方法，其具有以其沉积形式的至少24个饱和磁化强度 kG，矫顽力小于0.3 Oe。 一个关键的特征是在适当的种子层的同时向镀浴中加入芳基亚硫酸盐。

公开(公告)号：US20080197021A1

公开(公告)日：2008-08-21

申请号：US11707826

申请日：2007-02-16

申请人： Xiaomin Liu ,  Cherng-Chyi Han ,  Feiyue Li

发明人： Xiaomin Liu ,  Cherng-Chyi Han ,  Feiyue Li

IPC分类号： C25D5/50

CPC分类号： C25D3/562 ,  C25D5/00 ,  C25D5/006 ,  G11B5/3163 ,  H01F41/26

摘要： A process sequence for forming a soft magnetic layer having Hce and Hch of ≦2 Oe, Hk≦5 Oe, and Bs of ≧24 kG is disclosed. A CoFe or CoFe alloy is electroplated in a 10O C to 25O C. bath (pH 2 to 3) containing Co+2 and Fe+2 ions in addition to boric acid and one or more aryl sulfinate salts to promote magnetic softness in the deposited layer. Peak current density is 30 to 60 mA/cm2. A two step magnetic anneal process is performed to further improve softness. An easy axis anneal is followed by a hard axis anneal or vice versa. In an embodiment where the magnetic layer is a pole layer in a write head, the temperature is maintained in a 180O C to 250O C range and the applied magnetic field is kept a 300 Oe or below to prevent degradation of an adjacent read head.

摘要翻译： 公开了用于形成具有<= 2Oe，Hk <= 5Oe，Bs> = 24kG的Hce和Hch的软磁性层的工艺顺序。 CoFe或CoFe合金电镀在10欧姆至25微米的范围内。 除了硼酸和一种或多种芳基亚磺酸盐之外，还含有Co 2+，Fe 2+和Fe 2+ 2+的浴（pH 2至3）以促进沉积层中的磁性 。 峰值电流密度为30〜60mA / cm 2。 进行两步磁退火处理以进一步提高柔软度。 易轴退火之后是硬轴退火，反之亦然。 在磁性层是写入头中的极层的实施例中，温度保持在180℃至250℃范围内，施加的磁场为 保持300 Oe或以下，以防止相邻读头的退化。

公开(公告)号：US08568909B2

公开(公告)日：2013-10-29

申请号：US13469856

申请日：2012-05-11

申请人： Feiyue Li ,  Xiaomin Liu

发明人： Feiyue Li ,  Xiaomin Liu

IPC分类号： G11B5/127 ,  G11B5/187 ,  G11B5/31 ,  C22C38/10 ,  C22C38/12

CPC分类号： G11B5/1877 ,  C22C38/10 ,  C22C38/12 ,  C25D3/562 ,  G11B5/187 ,  G11B5/31 ,  G11B5/3116 ,  G11B5/3133 ,  Y10T428/11 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density BS greater than 1.9 Telsa and a resistivity ρ higher than 70 μohms-cm.

摘要翻译： 公开了可以用作磁写头中的顶极层和底极层的磁性层。 磁性层具有由FeWCoXNiYVZ表示的组成，其中w，x，y和z分别是Fe，Co，Ni和V的原子％，其中w在约60和85之间，x在约10 30，y在0和约20之间，z在约0.1和3之间，并且其中w + x + y + z = 100。 使用电镀电流密度为3〜30mA / cm 2的电镀工艺来沉积磁性层，并且涉及具有少量作为V源的VOSO4的电解质溶液。 得到的磁性层具有大于1.9Telsa的磁饱和磁通密度BS和高于70μΩ·cm的电阻率rho。