公开(公告)号：US08475939B2

公开(公告)日：2013-07-02

申请号：US12985678

申请日：2011-01-06

申请人： Chien-Hong Cheng ,  Cheng-An Wu ,  Fang-Iy Wu ,  Cheng-Hung Shih

发明人： Chien-Hong Cheng ,  Cheng-An Wu ,  Fang-Iy Wu ,  Cheng-Hung Shih

IPC分类号： H01L51/54

CPC分类号： H01L51/5275 ,  C07D249/08 ,  C07D271/107 ,  H01L51/5253

摘要： An m-terphenyl derivative has a structure of formula (I) or (II): wherein A and B are five-membered heterocyclic compounds selected from the group consisting of pyrrole, pyrazole, imidazole, 1,2,3-triazole, 1,2,4-triazole, 1,2,3,4-tetrazole, 1,2-thiazole, 1,3-thiazole and 1,3,4-thiadiazole, each of substituents R, R1 and R2 is a member independently selected from the group consisting of H, halo, cyano, trifluoromethyl, amino, C1-C10 alkyl, C2-C10 alkenyl, C2-C10 alkynyl, C3-C20 cycloalkyl, C3-C20 cycloalkenyl, C1-C20 heterocycloalkyl, C1-C20 heterocycloalkenyl, aryl and heteroaryl. The compound of the present invention may have advantages in good electron affinity, low HOMO and thereby achieving hole blocking and may be used for electron transport material and/or electron injection material.

摘要翻译： 间三联苯衍生物具有式（I）或（II）的结构：其中A和B是五元杂环化合物，其选自吡咯，吡唑，咪唑，1,2,3-三唑， 2,4-三唑，1,2,3,4-四唑，1,2-噻唑，1,3-噻唑和1,3,4-噻二唑，取代基R，R 1和R 2各自独立地选自 由H，卤素，氰基，三氟甲基，氨基，C 1 -C 10烷基，C 2 -C 10烯基，C 2 -C 10炔基，C 3 -C 20环烷基，C 3 -C 20环烯基，C 1 -C 20杂环烷基，C 1 -C 20杂环烯基，芳基 和杂芳基。 本发明的化合物可具有良好的电子亲和力，低HOMO的优点，从而实现空穴阻挡，并可用于电子传输材料和/或电子注入材料。

公开(公告)号：US08783897B2

公开(公告)日：2014-07-22

申请号：US13064367

申请日：2011-03-22

申请人： Cheng-Hung Shih

发明人： Cheng-Hung Shih

IPC分类号： F21V23/02 ,  F21V19/00 ,  F21V15/01 ,  H01R33/94

CPC分类号： H01R33/942

摘要： A lamp module includes an external elongated housing made of at least one of a transparent and a translucent material; a lamp terminal with lamp pins at each end of the elongated housing, at least one cold cathode fluorescent lamp (CCFL) disposed in the external elongated housing a reflective layer disposed in the external lamp elongated housing, and an electronic connector adapter having a plurality of contact pins at one end and a plurality of connecting jacks at an opposite end for receiving the lamp pins of one of the lamp terminals.

摘要翻译： 灯模块包括由透明和半透明材料中的至少一种制成的外部细长壳体; 在所述细长壳体的每个端部处具有灯销的灯端子，设置在所述外部细长壳体中的至少一个冷阴极荧光灯（CCFL），设置在所述外部灯细长壳体中的反射层，以及具有多个 在一端的接触针和在相对端的多个连接插座，用于接收一个灯端子的灯管。

公开(公告)号：US20130187265A1

公开(公告)日：2013-07-25

申请号：US13353380

申请日：2012-01-19

申请人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Yung-Wei Hsieh ,  Jun-Yu Yeh

发明人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Yung-Wei Hsieh ,  Jun-Yu Yeh

IPC分类号： H01L23/485

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H01L23/3171 ,  H01L23/49811 ,  H01L23/49894 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10126 ,  H01L2224/10156 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1369 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor structure comprises a carrier, a plurality of under bump metallurgy layers, a plurality of copper containing bumps and an organic barrier layer, wherein the carrier comprises a protective layer and a plurality of conductive pads, mentioned protective layer comprises a plurality of openings, the conductive pads exposed by the openings, mentioned under bump metallurgy layers being formed on the conductive pads, mentioned copper containing bumps being formed on the under bump metallurgy layers, each of the copper containing bumps comprises a top surface and a ring surface in connection with the top surface, mentioned organic barrier layer having a first coverage portion, and mentioned first coverage portion covers the top surface and the ring surface of each of the copper containing bumps.

摘要翻译： 半导体结构包括载体，多个凸块下金属层，多个含铜凸起和有机阻挡层，其中所述载体包括保护层和多个导电焊盘，所述保护层包括多个开口， 通过开口暴露的导电焊盘，所述凹凸不平的冶金层形成在导电焊盘上，所述含铜凸起形成在凸块下的冶金层上，每个含铜凸块包括顶表面和与 具有第一覆盖部分的上表面的有机阻挡层和所述第一覆盖部分覆盖每个含铜凸块的顶表面和环表面。

公开(公告)号：US20120243218A1

公开(公告)日：2012-09-27

申请号：US13064367

申请日：2011-03-22

申请人： Cheng-Hung Shih

发明人： Cheng-Hung Shih

IPC分类号： F21S4/00 ,  F21V5/00 ,  H01R31/06

CPC分类号： H01R33/942

摘要： A lamp module, connected to lamp cartridge adapter, the lamp module comprising: an external lamp, having at least one of a light-permeable material and a translucent material; two lamp heads, configuring to two terminal of the external lamp, and each lamp head has a plurality of lamp pin; at least one cold cathode fluorescent lamp (CCFL) disposed in the external lamp; and a reflective layer, dispose in the external lamp, the reflective layer having a reflective surface adjacent to and contactless to cold cathode fluorescent lamp.

摘要翻译： 一种连接到灯盒适配器的灯模块，所述灯模块包括：具有透光材料和半透明材料中的至少一种的外部灯; 两个灯头，配置到外部灯的两个端子，并且每个灯头具有多个灯销; 设置在外部灯中的至少一个冷阴极荧光灯（CCFL）; 和反射层，配置在外部灯中，反射层具有与冷阴极荧光灯相邻并且不接触的反射表面。

公开(公告)号：US08450049B2

公开(公告)日：2013-05-28

申请号：US13024992

申请日：2011-02-10

申请人： Chih-Ming Kuo ,  Yie-Chuan Chiu ,  Cheng-Hung Shih ,  Lung-Hua Ho

发明人： Chih-Ming Kuo ,  Yie-Chuan Chiu ,  Cheng-Hung Shih ,  Lung-Hua Ho

IPC分类号： G03F7/26

CPC分类号： H01L21/4853 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05671 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11903 ,  H01L2224/13007 ,  H01L2224/13008 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/01074 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/05552 ,  H01L2924/00

摘要： A process for forming an anti-oxidant metal layer on an electronic device comprises the steps of providing a substrate; forming a conductive metal layer on the substrate; forming a first photoresist layer on the conductive metal layer; patterning the first photoresist layer to form apertures and first grooves; forming a connecting member having a top surface and a lateral surface in the aperture and the first groove; removing the first photoresist layer to reveal the top surface and the lateral surface; forming a second photoresist layer on the conductive metal layer; patterning the second photoresist layer to form apertures and second grooves; forming an anti-oxidant metal layer in aperture and second groove, the anti-oxidant metal layer covers the top surface and the lateral surface of the connecting member; and removing the second photoresist layer to reveal the anti-oxidant metal layer and the conductive metal layer.

摘要翻译： 在电子器件上形成抗氧化金属层的方法包括以下步骤：提供衬底; 在所述基板上形成导电金属层; 在所述导电金属层上形成第一光致抗蚀剂层; 图案化第一光致抗蚀剂层以形成孔和第一凹槽; 形成在孔和第一凹槽中具有顶表面和侧表面的连接构件; 去除第一光致抗蚀剂层以露出顶表面和侧表面; 在所述导电金属层上形成第二光致抗蚀剂层; 图案化第二光致抗蚀剂层以形成孔和第二凹槽; 在孔和第二槽中形成抗氧化金属层，抗氧化金属层覆盖连接构件的顶表面和侧表面; 并除去第二光致抗蚀剂层以露出抗氧化金属层和导电金属层。

公开(公告)号：US20120208129A1

公开(公告)日：2012-08-16

申请号：US13024992

申请日：2011-02-10

申请人： Chih-Ming Kuo ,  Yie-Chuan Chiu ,  Cheng-Hung Shih ,  Lung-Hua Ho

发明人： Chih-Ming Kuo ,  Yie-Chuan Chiu ,  Cheng-Hung Shih ,  Lung-Hua Ho

IPC分类号： G03F7/20

CPC分类号： H01L21/4853 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05671 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11903 ,  H01L2224/13007 ,  H01L2224/13008 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/01074 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/05552 ,  H01L2924/00

摘要： A process for forming an anti-oxidant metal layer on an electronic device comprises the steps of providing a substrate; forming a conductive metal layer on the substrate; forming a first photoresist layer on the conductive metal layer; patterning the first photoresist layer to form apertures and first grooves; forming a connecting member having a top surface and a lateral surface in the aperture and the first groove; removing the first photoresist layer to reveal the top surface and the lateral surface; forming a second photoresist layer on the conductive metal layer; patterning the second photoresist layer to form apertures and second grooves; forming an anti-oxidant metal layer in aperture and second groove, the anti-oxidant metal layer covers the top surface and the lateral surface of the connecting member; and removing the second photoresist layer to reveal the anti-oxidant metal layer and the conductive metal layer.

摘要翻译： 在电子器件上形成抗氧化金属层的方法包括以下步骤：提供衬底; 在所述基板上形成导电金属层; 在所述导电金属层上形成第一光致抗蚀剂层; 图案化第一光致抗蚀剂层以形成孔和第一凹槽; 形成在孔和第一凹槽中具有顶表面和侧表面的连接构件; 去除第一光致抗蚀剂层以露出顶表面和侧表面; 在所述导电金属层上形成第二光致抗蚀剂层; 图案化第二光致抗蚀剂层以形成孔和第二凹槽; 在孔和第二槽中形成抗氧化金属层，抗氧化金属层覆盖连接构件的顶表面和侧表面; 并除去第二光致抗蚀剂层以露出抗氧化金属层和导电金属层。

公开(公告)号：US08692390B2

公开(公告)日：2014-04-08

申请号：US13030203

申请日：2011-02-18

申请人： Chih-Hung Wu ,  Lung-Hua Ho ,  Chih-Ming Kuo ,  Cheng-Hung Shih ,  Yie-Chuan Chiu

发明人： Chih-Hung Wu ,  Lung-Hua Ho ,  Chih-Ming Kuo ,  Cheng-Hung Shih ,  Yie-Chuan Chiu

IPC分类号： H01L29/40

CPC分类号： H01L23/49811 ,  H01L23/295 ,  H01L2224/10126 ,  H01L2224/13565 ,  H01L2224/81191 ,  H01L2224/83192 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： A pyramid bump structure for electrically coupling to a bond pad on a carrier comprises a conductive block disposed at the bond pad and an oblique pyramid insulation layer covered at one side of the conductive block. The oblique pyramid insulation layer comprises a bottom portion and a top portion, and outer diameter of the oblique pyramid insulation layer is tapered from the bottom portion to the top portion. When the carrier is connected with a substrate and an anisotropic conductive film disposed at the substrate, the pyramid bump structure may rapidly embed into the anisotropic conductive film to raise the flow rate of the anisotropic conductive film. Further, a short phenomenon between adjacent bumps can be avoided to raise the yield rate of package process.

摘要翻译： 用于电耦合到载体上的接合焊盘的金字塔凸块结构包括设置在接合焊盘处的导电块和在导电块的一侧被覆盖的斜锥形绝缘层。 倾斜金字塔绝缘层包括底部和顶部，倾斜金字塔绝缘层的外径从底部到顶部逐渐变细。 当载体与衬底连接并且设置在衬底上的各向异性导电膜时，金字塔凸块结构可以快速地嵌入到各向异性导电膜中以提高各向异性导电膜的流速。 此外，可以避免相邻凸点之间的短暂现象，以提高封装处理的成品率。

公开(公告)号：US20130214407A1

公开(公告)日：2013-08-22

申请号：US13398081

申请日：2012-02-16

申请人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Yung-Wei Hsieh ,  Bo-Shiun Jiang

发明人： Cheng-Hung Shih ,  Shu-Chen Lin ,  Cheng-Fan Lin ,  Yung-Wei Hsieh ,  Bo-Shiun Jiang

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L21/50 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81903 ,  H01L2224/83192 ,  H01L2224/83851 ,  H01L2224/9211 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00

摘要： A semiconductor packaging method includes providing a substrate having a plurality of pads, each of the pads comprises a first coupling surface having a plurality of first conductive contact areas and a plurality of first non-conductive contact areas; forming a conductible gel with anti-dissociation function on the substrate, said conductible gel includes a plurality of conductive particles and a plurality of anti-dissociation substances; mounting a chip on the substrate, said chip comprises a plurality of copper-containing bumps, each of the copper-containing bumps comprises a ring surface and a second coupling surface having a plurality of second conductive contact areas and a plurality of second non-conductive contact areas, wherein the conductive particles are electrically connected with the first conductive contact areas and the second conductive contact areas, said anti-dissociation substances are in contact with the second non-conductive contact area, and the ring surfaces are covered with the anti-dissociation substances.

公开(公告)号：US20120319271A1

公开(公告)日：2012-12-20

申请号：US13163967

申请日：2011-06-20

申请人： Cheng-Hung Shih ,  Shyh-Jen Guo ,  Wen-Tung Chen

发明人： Cheng-Hung Shih ,  Shyh-Jen Guo ,  Wen-Tung Chen

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L2224/02126 ,  H01L2224/0401 ,  H01L2224/05012 ,  H01L2224/05017 ,  H01L2224/05018 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/81805 ,  H01L2924/01322 ,  H01L2924/15788 ,  H01L2924/01074 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A bump structure comprises a first polymer block, a second polymer block, a first groove, an under bump metallurgy layer and a connection metal layer, wherein the first polymer block and the second polymer block are individual blocks. The first polymer block and the second polymer block are located at two sides of the first groove, the first polymer block comprises a first connection slot, and the second polymer block comprises a second connection slot communicated with the first connection slot and the first groove. The under bump metallurgy layer covers the first polymer block and the second polymer block to form a second groove, a third connection slot and a fourth connection slot communicated with each other. The connection metal layer covers the under bump metallurgy layer to form a third groove, a fifth connection slot and a sixth connection slot communicated with each other.

摘要翻译： 凸块结构包括第一聚合物嵌段，第二聚合物嵌段，第一凹槽，凸块下金属层和连接金属层，其中第一聚合物嵌段和第二聚合物嵌段是各自的嵌段。 第一聚合物嵌段和第二聚合物嵌段位于第一凹槽的两侧，第一聚合物嵌段包括第一连接槽，第二聚合物嵌段包括与第一连接槽和第一凹槽连通的第二连接槽。 凸块下金属层覆盖第一聚合物嵌段和第二聚合物嵌段以形成彼此连通的第二凹槽，第三连接槽和第四连接槽。 连接金属层覆盖凸块下金属层以形成第三凹槽，第五连接槽和第六连接槽彼此连通。

公开(公告)号：US20120318570A1

公开(公告)日：2012-12-20

申请号：US13163870

申请日：2011-06-20

申请人： Cheng-Hung Shih ,  Shyh-Jen Guo ,  Wen-Tung Chen

发明人： Cheng-Hung Shih ,  Shyh-Jen Guo ,  Wen-Tung Chen

IPC分类号： H05K1/00 ,  B23K1/20

CPC分类号： H05K3/4007 ,  H05K3/244 ,  H05K2201/09745 ,  H05K2201/099

摘要： A bump structure comprises a first polymer block, a second polymer block, a first groove, an under bump metallurgy layer and a connection metal layer, wherein the first polymer block and the second polymer block are individual blocks. The first polymer block comprises a first connection slot, and the second polymer block comprises a second connection slot communicated with the first groove and the first connection slot. The under bump metallurgy layer covers the first polymer block and the second polymer block to form a second groove. The connection metal layer covers the under bump metallurgy layer to form a third groove, wherein the under bump metallurgy layer covers a first coverage area of the first polymer block and a second coverage area of the second polymer block and reveals a first exposure area of the first polymer block and a second exposure area of the second polymer block.

摘要翻译： 凸块结构包括第一聚合物嵌段，第二聚合物嵌段，第一凹槽，凸块下金属层和连接金属层，其中第一聚合物嵌段和第二聚合物嵌段是各自的嵌段。 第一聚合物块包括第一连接槽，第二聚合物块包括与第一槽和第一连接槽连通的第二连接槽。 凸块下金属层覆盖第一聚合物嵌段和第二聚合物嵌段以形成第二凹槽。 所述连接金属层覆盖所述凸块下金属层以形成第三凹槽，其中所述凸块下金属层覆盖所述第一聚合物嵌段的第一覆盖区域和所述第二聚合物嵌段的第二覆盖区域，并且揭示所述第二聚合物嵌段的第一暴露区域 第一聚合物嵌段和第二聚合物嵌段的第二曝光区域。