公开(公告)号：US20080284019A1

公开(公告)日：2008-11-20

申请号：US12128713

申请日：2008-05-29

申请人： Chih-Chao Yang ,  Shom Ponoth ,  David Rath ,  Keith Kwong Hon Wong

发明人： Chih-Chao Yang ,  Shom Ponoth ,  David Rath ,  Keith Kwong Hon Wong

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76843 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089

摘要： A conductor-dielectric interconnect structure is fabricated by providing a structure comprising a dielectric layer having a patterned feature therein; depositing a plating seed layer on the dielectric layer in the patterned feature; depositing a sacrificial seed layer on the plating seed layer in the via; reducing the thickness of the sacrificial seed layer by reverse plating; and plating a conductive metal on the sacrificial seed layer in the patterned feature. Also provided is a dielectric layer having a via therein; a plating seed layer on the dielectric layer in the patterned feature; and a discontinuous sacrificial seed layer located in the patterned feature.

摘要翻译： 通过提供包括其中具有图案化特征的电介质层的结构来制造导体 - 电介质互连结构; 在所述图案化特征中的所述电介质层上沉积电镀种子层; 在通孔的电镀种子层上沉积牺牲种子层; 通过反向电镀减少牺牲种子层的厚度; 以及在所述图案化特征中的所述牺牲种子层上镀覆导电金属。 还提供了其中具有通孔的电介质层; 图案化特征中的电介质层上的电镀种子层; 以及位于图案化特征中的不连续牺牲种子层。

公开(公告)号：US20070117377A1

公开(公告)日：2007-05-24

申请号：US11286093

申请日：2005-11-23

申请人： Chih-Chao Yang ,  Shom Ponoth ,  David Rath ,  Keith Wong

发明人： Chih-Chao Yang ,  Shom Ponoth ,  David Rath ,  Keith Wong

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089

摘要： A conductor-dielectric interconnect structure is fabricated by providing a structure comprising a dielectric layer having a patterned feature therein; depositing a plating seed layer on the dielectric layer in the patterned feature; depositing a sacrificial seed layer on the plating seed layer in the via; reducing the thickness of the sacrificial seed layer by reverse plating; and plating a conductive metal on the sacrificial seed layer in the patterned feature. Also provided is a dielectric layer having a via therein; a plating seed layer on the dielectric layer in the patterned feature; and a discontinuous sacrificial seed layer located in the patterned feature.

摘要翻译： 通过提供包括其中具有图案化特征的电介质层的结构来制造导体 - 电介质互连结构; 在所述图案化特征中的所述电介质层上沉积电镀种子层; 在通孔的电镀种子层上沉积牺牲种子层; 通过反向电镀减少牺牲种子层的厚度; 以及在所述图案化特征中的所述牺牲种子层上镀覆导电金属。 还提供了其中具有通孔的电介质层; 图案化特征中的电介质层上的电镀种子层; 以及位于图案化特征中的不连续牺牲种子层。

公开(公告)号：US20060043590A1

公开(公告)日：2006-03-02

申请号：US10711145

申请日：2004-08-27

申请人： Steven Shyng-Tsong Chen ,  Kaushik Kumar ,  Stephen Greco ,  Shom Ponoth ,  Terry Spooner ,  David Rath ,  Wei-Tsu Tseng

发明人： Steven Shyng-Tsong Chen ,  Kaushik Kumar ,  Stephen Greco ,  Shom Ponoth ,  Terry Spooner ,  David Rath ,  Wei-Tsu Tseng

IPC分类号： H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/7684 ,  H01L21/3212 ,  H01L21/76832 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A chemical mechanical polishing (CMP) step is used to remove excess conductive material (e.g., Cu) overlying a low-k or ultralow-k interlevel dielectric layer (ILD) layer having trenches filled with conductive material, for a damascene interconnect structure. A reactive ion etch (RIE) or a Gas Cluster Ion Beam (GCIB) process is used to remove a portion of a liner which is atop a hard mask. A wet etch step is used to remove an oxide portion of the hard mask overlying the ILD, followed by a final touch-up Cu CMP (CMP) step which chops the protruding Cu patterns off and lands on the SiCOH hard mask. In this manner, processes used to remove excess conductive material substantially do not affect the portion of the hard mask overlying the interlevel dielectric layer.

摘要翻译： 化学机械抛光（CMP）步骤用于去除覆盖在具有填充有导电材料的沟槽的低k或超低k层间介质层（ILD）层上的过剩导电材料（例如Cu），用于镶嵌互连结构。 使用反应离子蚀刻（RIE）或气体簇离子束（GCIB）方法去除位于硬掩模顶部的衬垫的一部分。 使用湿蚀刻步骤去除覆盖在ILD上的硬掩模的氧化物部分，随后是最后的上覆Cu CMP（CMP）步骤，其将突出的Cu图案切掉并落在SiCOH硬掩模上。 以这种方式，用于去除过量的导电材料的工艺基本上不影响覆盖层间电介质层的硬掩模的部分。

公开(公告)号：US20070059922A1

公开(公告)日：2007-03-15

申请号：US11162511

申请日：2005-09-13

申请人： Lawrence Clevenger ,  Andrew Cowley ,  Timothy Dalton ,  Mark Hoinkis ,  Kaushik Kumar ,  Douglas La Tulipe ,  David Rath ,  Chih-Chao Yang

发明人： Lawrence Clevenger ,  Andrew Cowley ,  Timothy Dalton ,  Mark Hoinkis ,  Kaushik Kumar ,  Douglas La Tulipe ,  David Rath ,  Chih-Chao Yang

IPC分类号： H01L21/4763

CPC分类号： H01L21/76811 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76835

摘要： The present invention relates to methods for post-etch, particularly post-RIE, removal of fluorocarbon-based residues from a hybrid dielectric structure. The hybrid dielectric structure contains a first dielectric material, and a line-level dielectric layer containing a second, different dielectric material, and wherein said second, different dielectric material comprises a polymeric thermoset dielectric material having a dielectric constant less than 4. Low energy electron beam or low temperature annealing is utilized by the present invention for removal of the fluorocarbon-based residues from such a hybrid dielectric structure, without damaging the low-k polymeric thermoset dielectric material contained in such a hybrid dielectric structure.

摘要翻译： 本发明涉及用于从混合电介质结构去除基于碳氟化合物的残留物的后蚀刻，特别是后RIE的方法。 混合电介质结构包含第一电介质材料和含有第二不同介电材料的线路级介电层，并且其中所述第二不同介电材料包含介电常数小于4的聚合物热固性介电材料。低能电子 本发明使用光束或低温退火来从这种混合电介质结构中除去基于碳氟化合物的残留物，而不会损坏这种混合电介质结构中所含的低k聚合物热固性介电材料。

公开(公告)号：US20060183056A1

公开(公告)日：2006-08-17

申请号：US11401898

申请日：2006-04-12

申请人： Emanuel Cooper ,  Bruce Furman ,  David Rath

发明人： Emanuel Cooper ,  Bruce Furman ,  David Rath

IPC分类号： G03F7/00

CPC分类号： C23G1/103 ,  C23C22/63 ,  C23F1/34 ,  H01L21/32134

摘要： Copper and copper alloys are etched to provide uniform and smooth surface by employing an aqueous composition that comprises an oxidant, a mixture of at least one weak complexant and at least one strong complexant for the copper or copper alloy, and water and has a pH of about 6 to about 12 so as to form an oxidized etch controlling layer and to uniformly remove the copper or copper alloy; and then removing the oxidized etch controlling layer with a non-oxidizing composition. Copper and copper alloy structure, having smooth upper surfaces are also provided.

公开(公告)号：US07614083B2

公开(公告)日：2009-11-03

申请号：US11078082

申请日：2005-03-11

申请人： Bharat Khuti ,  Clayton Coleman ,  David Rath ,  Ernest Rakaczky ,  Jim Leslie ,  Juan Peralta ,  George Simpson

发明人： Bharat Khuti ,  Clayton Coleman ,  David Rath ,  Ernest Rakaczky ,  Jim Leslie ,  Juan Peralta ,  George Simpson

IPC分类号： G06F11/00

CPC分类号： H04L63/1416 ,  H04L63/02 ,  H04L63/0209 ,  H04L63/105 ,  H04L63/14 ,  H04L63/20 ,  H04L67/12

摘要： The invention provides an improved network and methods of operation thereof for use in or with process control systems, computer-based manufacturing or production control systems, environmental control systems, industrial control system, and the like (collectively, “control systems”). Those networks utilize a unique combination of firewalls, intrusion detection systems, intrusion protection devices and/or other devices for hardening (e.g., security against hacking, intrusion or other mischievous conduct) and/or intrusion detection. The networks and methods have application, by way of example, in plants, sites and other facilities in which networks that support control systems interface with corporate, business or other networks.

摘要翻译： 本发明提供一种改进的网络及其操作方法，用于过程控制系统，基于计算机的制造或生产控制系统，环境控制系统，工业控制系统等（统称为“控制系统”）。 这些网络使用防火墙，入侵检测系统，入侵保护设备和/或其他设备（例如，防止入侵，入侵或其他恶作剧行为的安全性）和/或入侵检测的独特组合。 网络和方法通过示例的方式应用于工厂，站点和其他支持控制系统的网络与企业，企业或其他网络接口的设施。

公开(公告)号：US20050158985A1

公开(公告)日：2005-07-21

申请号：US11058783

申请日：2005-02-16

申请人： Shyng-Tsong Chen ,  Timothy Dalton ,  Kenneth Davis ,  Chao-Kun Hu ,  Fen Jamin ,  Steffen Kaldor ,  Mahadevaiyer Krishnan ,  Kaushik Kumar ,  Michael Lofaro ,  Sandra Malhotra ,  Chandrasekhar Narayan ,  David Rath ,  Judith Rubino ,  Katherine Saenger ,  Andrew Simon ,  Sean Smith ,  Wei-tsu Tseng

发明人： Shyng-Tsong Chen ,  Timothy Dalton ,  Kenneth Davis ,  Chao-Kun Hu ,  Fen Jamin ,  Steffen Kaldor ,  Mahadevaiyer Krishnan ,  Kaushik Kumar ,  Michael Lofaro ,  Sandra Malhotra ,  Chandrasekhar Narayan ,  David Rath ,  Judith Rubino ,  Katherine Saenger ,  Andrew Simon ,  Sean Smith ,  Wei-tsu Tseng

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/48

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/76847 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit structure is disclosed that has a layer of logical and functional devices and an interconnection layer above the layer of logical and functional devices. The interconnection layer has a substrate, conductive features within the substrate and caps positioned only above the conductive features.

摘要翻译： 公开了一种集成电路结构，其具有逻辑和功能器件层以及逻辑和功能器件层之上的互连层。 互连层具有衬底，衬底内的导电特征和仅位于导电特征之上的盖。

公开(公告)号：US20050081884A1

公开(公告)日：2005-04-21

申请号：US10685684

申请日：2003-10-15

申请人： Ravikumar Ramachandran ,  David Rath

发明人： Ravikumar Ramachandran ,  David Rath

IPC分类号： B08B3/12 ,  C11D1/02 ,  C11D1/38 ,  C11D7/24 ,  C11D7/26 ,  C11D11/00 ,  C25F1/00 ,  H01L21/00 ,  H01L21/306

CPC分类号： H01L21/02052 ,  B08B3/12 ,  C11D1/02 ,  C11D1/38 ,  C11D7/241 ,  C11D7/261 ,  C11D11/0047 ,  H01L21/67057 ,  Y10S134/902

摘要： The present invention provides a method cleaning of semiconductor devices through heterogeneous nucleation of cavitation bubbles. Heterogeneous nucleation is performed by applying sonic energy to a cleaning solution and a phase material in order to remove unwanted particles from semiconductor devices. A surfactant may be added to the phase material and the cleaning solution.

摘要翻译： 本发明提供了通过空化气泡的异质成核来清洗半导体器件的方法。 通过将声能施加到清洁溶液和相材料以便从半导体器件中去除不需要的颗粒来进行非均匀成核。 可以向相材料和​​清洁溶液中加入表面活性剂。

公开(公告)号：US20060294579A1

公开(公告)日：2006-12-28

申请号：US11069465

申请日：2005-03-01

申请人： Bharat Khuti ,  Clayton Coleman ,  David Rath ,  Ernest Rahaczky ,  Jim Leslie ,  Juan Peralta ,  George Simpson

发明人： Bharat Khuti ,  Clayton Coleman ,  David Rath ,  Ernest Rahaczky ,  Jim Leslie ,  Juan Peralta ,  George Simpson

IPC分类号： H04L9/32

CPC分类号： H04L63/1416 ,  H04L63/02 ,  H04L63/0209 ,  H04L63/105 ,  H04L63/14 ,  H04L63/20 ,  H04L67/12

摘要： The invention provides an improved network and methods of operation thereof for use in or with process control systems, computer-based manufacturing or production control systems, environmental control systems, industrial control system, and the like (collectively, “control systems”). Those networks utilize a unique combination of firewalls, intrusion detection systems, intrusion protection devices and/or other devices for hardening (e.g., security against hacking, intrusion or other mischievous conduct) and/or intrusion detection. The networks and methods have application, by way of example, in plants, sites and other facilities in which networks that support control systems interface with corporate, business or other networks.

公开(公告)号：US07056648B2

公开(公告)日：2006-06-06

申请号：US10664017

申请日：2003-09-17

申请人： Emanuel Cooper ,  Bruce Furman ,  David Rath

发明人： Emanuel Cooper ,  Bruce Furman ,  David Rath

IPC分类号： G03F7/34 ,  C23F1/18

CPC分类号： C23G1/103 ,  C23C22/63 ,  C23F1/34 ,  H01L21/32134

摘要： Copper and copper alloys are etched to provide uniform and smooth surface by employing an aqueous composition that comprises an oxidant, a mixture of at least one weak complexant and at least one strong complexant for the copper or copper alloy, and water and has a pH of about 6 to about 12 so as to form an oxidized etch controlling layer and to uniformly remove the copper or copper alloy; and then removing the oxidized etch controlling layer with a non-oxidizing composition. Copper and copper alloy structure, having smooth upper surfaces are also provided.