摘要:
A method of patterning a metal alloy material layer having hafnium and molybdenum. The method includes forming a patterned mask layer on a metal alloy material layer having hafnium and molybdenum on a substrate. The patterned mask layer is used as a mask and an etching process is performed using an etchant on the metal alloy material layer having hafnium and molybdenum so as to form a metal alloy layer having hafnium and molybdenum. The etchant includes at least nitric acid, hydrofluoric acid and sulfuric acid. The patterned mask layer is removed.
摘要:
A method of patterning a metal alloy material layer having hafnium and molybdenum. The method includes forming a patterned mask layer on a metal alloy material layer having hafnium and molybdenum on a substrate. The patterned mask layer is used as a mask and an etching process is performed using an etchant on the metal alloy material layer having hafnium and molybdenum so as to form a metal alloy layer having hafnium and molybdenum. The etchant includes at least nitric acid, hydrofluoric acid and sulfuric acid. The patterned mask layer is removed.
摘要:
An etchant for etching a metal alloy having hafnium and molybdenum includes 20 to 80 percent by weight of nitric acid, 1 to 49 percent by weight of hydrofluoric acid, 1 to 96 percent by weight of sulfuric acid, and 1 to 30 percent by weight of water, based on the total weight of the etchant.
摘要:
A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.
摘要:
A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.
摘要:
A removable cover system for protecting solar cells from exposure to moisture during fabrication processes. The cover system includes a cover having a configuration that complements the configuration of a solar cell substrate to be processed in an apparatus where moisture is present. A resiliently deformable seal member attached to the cover is positionable with the cover to engage and seal the top surface of the substrate. In one embodiment, the cover is dimensioned and arranged so that the seal member engages the peripheral angled edges and corners of the substrate for preventing the ingress of moisture beneath the cover. An apparatus for fabricating a solar cell using the cover and associated method are also disclosed.
摘要:
A microstructure diffuser includes a light-entering surface, a light-emitting surface, and a plurality of microstructure portions having a first microstructure unit and a second microstructure unit. The first microstructure unit includes a first side surface, a second side surface, a top surface, a first pitch (P1), a second pitch (P2), and a height (H). The second microstructure unit has a curve function shape and is located at the light-emitting surface. The first side surface and the second side surface of the first microstructure unit receive the light beam of the light source to form a first optical path. The top surface of the first microstructure unit receives the light beam of the light source to form a second optical path. The second microstructure unit receives the light beam of the light source to form a third optical path.
摘要:
An insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring has a generally step-shaped cross-sectional configuration which defines a perpendicular gap or flow space between the insert ring and the wafer support. In the etching of substrates on the wafer support, the perpendicular gap or flow space defines a perpendicular flow path for plasma species. Consequently, flow of heavy plasma species against the outer wall of the wafer support is substantially hindered or reduced to reduce accumulation of polymer material on the inner surface of the insert ring and/or the outer wall of the wafer support.
摘要:
An inner ring signal and an outer ring signal according to specific patterns formed on the label side of the optical disc are generated. Timing starts when the outer ring signal reveals the end of a positioning pattern and stops to obtain a timing value when the inner ring signal reveals the start of a square wave defining a specified spoke. A starting spoke is defined according to the inner ring signal and the specified spoke. A deviation bit value is calculated according to the timing value and a bit number of a data to be marked on a certain track of the optical disc. The data is rotated according to the deviation bit value, and then marked on the certain track, starting with the starting spoke.
摘要:
A testing method and related system enables a power management device to power-on or power-off a second electrical device via a first transmission interface of a first electrical device. The first electrical device sets power-on and power off times of the power management device. The first electrical device sends a power-on or a power-off control instruction to the power management device via the first transmission interface based on the set power-on and power-off times to power-on or power-off the power management device, and the first electrical device performs a timing process. The second electrical device executes a corresponding power-on or power-off process based on power statuses of the power management device. The first electrical device determines whether the second electrical device returns with a power-on or a power-off testing signal as a testing result within a predetermined time during the process of timing.