公开(公告)号：US20100022153A1

公开(公告)日：2010-01-28

申请号：US12575474

申请日：2009-10-08

申请人： Chih-Wen Yao ,  Hsin-Hung Lee

发明人： Chih-Wen Yao ,  Hsin-Hung Lee

IPC分类号： H01J9/50

CPC分类号： G09G3/3233 ,  G09G2300/0842 ,  G09G2330/08 ,  H01L27/124 ,  H01L27/3223 ,  H01L27/3244 ,  H01L2251/568

摘要： The invention provides a method of repairing the pixel structure, and the method includes the following. First, an electrical connection between the current control unit and the power line is cut. The power line is then electrically connected to the redundant active device, so that the current control unit and the redundant active device control the current provided by the power line. The invention provides a method of repairing the organic electro-luminescence display unit, suitable for repairing the above-mentioned organic electro-luminescence display unit, and the method includes the following. First, an electrical connection between the current control unit and the power line is cut. The power line is electrically connected to the redundant active device, so that the current control unit and the redundant active device control the current passing through the organic electro-luminescence layer.

摘要翻译： 本发明提供一种修复像素结构的方法，该方法包括以下步骤。 首先，切断电流控制单元与电力线之间的电连接。 电力线然后电连接到冗余有源器件，使得电流控制单元和冗余有源器件控制电力线提供的电流。 本发明提供一种修复有机电致发光显示单元的方法，适用于修复上述有机电致发光显示单元，该方法包括以下步骤。 首先，切断电流控制单元与电力线之间的电连接。 电力线电连接到冗余有源器件，使得电流控制单元和冗余有源器件控制通过有机电致发光层的电流。

公开(公告)号：US20070152567A1

公开(公告)日：2007-07-05

申请号：US11309018

申请日：2006-06-09

申请人： Chih-Wen Yao ,  Hsin-Hung Lee

发明人： Chih-Wen Yao ,  Hsin-Hung Lee

IPC分类号： G09G3/10 ,  H01J1/62

CPC分类号： G09G3/3233 ,  G09G2300/0842 ,  G09G2330/08 ,  H01L27/124 ,  H01L27/3223 ,  H01L27/3244 ,  H01L2251/568

摘要： A pixel structure electrically connected to a scan line, a data line and a power line is provided. The pixel structure includes a current control unit, a pixel electrode and a redundant active device. The current control unit is electrically connected to the scan line, the data line and the power line. The pixel electrode is electrically connected to the current control unit. The redundant active device is electrically connected to the pixel electrode and the current control unit, and the redundant active device is electrically insulated from the power line. Moreover, an organic electro-luminescence displaying unit and a repairing method thereof are further provided.

摘要翻译： 提供电连接到扫描线，数据线和电源线的像素结构。 像素结构包括电流控制单元，像素电极和冗余有源器件。 电流控制单元电连接到扫描线，数据线和电源线。 像素电极电连接到电流控制单元。 冗余有源器件电连接到像素电极和电流控制单元，冗余有源器件与电源线电绝缘。 此外，还提供有机电致发光显示单元及其修复方法。

公开(公告)号：US07642710B2

公开(公告)日：2010-01-05

申请号：US11309018

申请日：2006-06-09

申请人： Chih-Wen Yao ,  Hsin-Hung Lee

发明人： Chih-Wen Yao ,  Hsin-Hung Lee

IPC分类号： H01L51/50 ,  H01L27/32 ,  G09G3/14

CPC分类号： G09G3/3233 ,  G09G2300/0842 ,  G09G2330/08 ,  H01L27/124 ,  H01L27/3223 ,  H01L27/3244 ,  H01L2251/568

摘要： A pixel structure electrically connected to a scan line, a data line and a power line is provided. The pixel structure includes a current control unit, a pixel electrode and a redundant active device. The current control unit is electrically connected to the scan line, the data line and the power line. The pixel electrode is electrically connected to the current control unit. The redundant active device is electrically connected to the pixel electrode and the current control unit, and the redundant active device is electrically insulated from the power line. Moreover, an organic electro-luminescence displaying unit and a repairing method thereof are further provided.

摘要翻译： 提供电连接到扫描线，数据线和电源线的像素结构。 像素结构包括电流控制单元，像素电极和冗余有源器件。 电流控制单元电连接到扫描线，数据线和电源线。 像素电极电连接到电流控制单元。 冗余有源器件电连接到像素电极和电流控制单元，冗余有源器件与电源线电绝缘。 此外，还提供有机电致发光显示单元及其修复方法。

公开(公告)号：US08092268B2

公开(公告)日：2012-01-10

申请号：US12575474

申请日：2009-10-08

申请人： Chih-Wen Yao ,  Hsin-Hung Lee

发明人： Chih-Wen Yao ,  Hsin-Hung Lee

IPC分类号： H01L21/00 ,  H01J9/50

CPC分类号： G09G3/3233 ,  G09G2300/0842 ,  G09G2330/08 ,  H01L27/124 ,  H01L27/3223 ,  H01L27/3244 ,  H01L2251/568

摘要： The invention provides a method of repairing the pixel structure, and the method includes the following. First, an electrical connection between the current control unit and the power line is cut. The power line is then electrically connected to the redundant active device, so that the current control unit and the redundant active device control the current provided by the power line. The invention provides a method of repairing the organic electro-luminescence display unit, suitable for repairing the above-mentioned organic electro-luminescence display unit, and the method includes the following. First, an electrical connection between the current control unit and the power line is cut. The power line is electrically connected to the redundant active device, so that the current control unit and the redundant active device control the current passing through the organic electro-luminescence layer.

摘要翻译： 本发明提供一种修复像素结构的方法，该方法包括以下步骤。 首先，切断电流控制单元与电力线之间的电连接。 电力线然后电连接到冗余有源器件，使得电流控制单元和冗余有源器件控制电力线提供的电流。 本发明提供一种修复有机电致发光显示单元的方法，适用于修复上述有机电致发光显示单元，该方法包括以下步骤。 首先，切断电流控制单元与电力线之间的电连接。 电力线电连接到冗余有源器件，使得电流控制单元和冗余有源器件控制通过有机电致发光层的电流。

公开(公告)号：US20110163376A1

公开(公告)日：2011-07-07

申请号：US12652294

申请日：2010-01-05

申请人： Chih-Chang CHENG ,  Ruey-Hsin Liu ,  Chih-Wen Yao ,  Chia-Chin Shen ,  Eric Huang ,  Fu Chin Yang ,  Chun Lin Tsai ,  Hsiao-Chin Tuan

发明人： Chih-Chang CHENG ,  Ruey-Hsin Liu ,  Chih-Wen Yao ,  Chia-Chin Shen ,  Eric Huang ,  Fu Chin Yang ,  Chun Lin Tsai ,  Hsiao-Chin Tuan

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L27/088 ,  H01L24/16 ,  H01L24/48 ,  H01L29/063 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7816 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01068 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/0401

摘要： A high voltage (HV) device includes a well region of a first dopant type disposed in a substrate. A first well region of a second dopant type is disposed in the well region of the first dopant type. An isolation structure is at least partially disposed in the well region of the first dopant type. A first gate electrode is disposed over the isolation structure and the first well region of the second dopant type. A second well region of the second dopant type is disposed in the well region of the first dopant type. The second well region of the second dopant type is spaced from the first well region of the second dopant type. A second gate electrode is disposed between and over the first well region of the second dopant type and the second well region of the second dopant type.

摘要翻译： 高压（HV）器件包括设置在衬底中的第一掺杂剂类型的阱区。 第二掺杂剂类型的第一阱区域设置在第一掺杂剂类型的阱区域中。 隔离结构至少部分地设置在第一掺杂剂类型的阱区中。 第一栅电极设置在隔离结构和第二掺杂剂类型的第一阱区之上。 第二掺杂剂类型的第二阱区设置在第一掺杂剂类型的阱区中。 第二掺杂剂类型的第二阱区域与第二掺杂剂类型的第一阱区域间隔开。 第二栅电极设置在第二掺杂剂类型的第一阱区域和第二掺杂剂类型的第二阱区域之间和之上。

公开(公告)号：US08704312B2

公开(公告)日：2014-04-22

申请号：US12652294

申请日：2010-01-05

申请人： Chih-Chang Cheng ,  Ruey-Hsin Liu ,  Chih-Wen Yao ,  Chia-Chin Shen ,  Eric Huang ,  Fu Chin Yang ,  Chun Lin Tsai ,  Hsiao-Chin Tuan

发明人： Chih-Chang Cheng ,  Ruey-Hsin Liu ,  Chih-Wen Yao ,  Chia-Chin Shen ,  Eric Huang ,  Fu Chin Yang ,  Chun Lin Tsai ,  Hsiao-Chin Tuan

IPC分类号： H01L27/088

CPC分类号： H01L27/088 ,  H01L24/16 ,  H01L24/48 ,  H01L29/063 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7816 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01068 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/0401

摘要： A high voltage (HV) device includes a well region of a first dopant type disposed in a substrate. A first well region of a second dopant type is disposed in the well region of the first dopant type. An isolation structure is at least partially disposed in the well region of the first dopant type. A first gate electrode is disposed over the isolation structure and the first well region of the second dopant type. A second well region of the second dopant type is disposed in the well region of the first dopant type. The second well region of the second dopant type is spaced from the first well region of the second dopant type. A second gate electrode is disposed between and over the first well region of the second dopant type and the second well region of the second dopant type.

摘要翻译： 高压（HV）器件包括设置在衬底中的第一掺杂剂类型的阱区。 第二掺杂剂类型的第一阱区域设置在第一掺杂剂类型的阱区域中。 隔离结构至少部分地设置在第一掺杂剂类型的阱区中。 第一栅电极设置在隔离结构和第二掺杂剂类型的第一阱区之上。 第二掺杂剂类型的第二阱区设置在第一掺杂剂类型的阱区中。 第二掺杂剂类型的第二阱区域与第二掺杂剂类型的第一阱区域间隔开。 第二栅电极设置在第二掺杂剂类型的第一阱区域和第二掺杂剂类型的第二阱区域之间和之上。

公开(公告)号：US08461647B2

公开(公告)日：2013-06-11

申请号：US12721045

申请日：2010-03-10

申请人： Hsueh-Liang Chou ,  Ruey-Hsin Liu ,  Chih-Wen Yao ,  Hsiao-Chin Tuan

发明人： Hsueh-Liang Chou ,  Ruey-Hsin Liu ,  Chih-Wen Yao ,  Hsiao-Chin Tuan

IPC分类号： H01L29/66

CPC分类号： H01L29/42368 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device is provided that, in an embodiment, is in the form of a high voltage MOS (HVMOS) device. The device includes a semiconductor substrate and a gate structure formed on the semiconductor substrate. The gate structure includes a gate dielectric which has a first portion with a first thickness and a second portion with a second thickness. The second thickness is greater than the first thickness. A gate electrode is disposed on the first and second portion. In an embodiment, a drift region underlies the second portion of the gate dielectric. A method of fabricating the same is also provided.

摘要翻译： 提供了一种半导体器件，其在一个实施例中是高压MOS（HVMOS）器件的形式。 该器件包括形成在半导体衬底上的半导体衬底和栅极结构。 栅极结构包括具有第一厚度的第一部分和具有第二厚度的第二部分的栅极电介质。 第二厚度大于第一厚度。 栅电极设置在第一和第二部分上。 在一个实施例中，漂移区域位于栅极电介质的第二部分的下方。 还提供了一种制造该方法的方法。

公开(公告)号：US08445955B2

公开(公告)日：2013-05-21

申请号：US12699397

申请日：2010-02-03

申请人： Chih-Chang Cheng ,  Ruey-Hsin Liu ,  Chih-Wen Yao ,  Hsiao Chin Tuan

发明人： Chih-Chang Cheng ,  Ruey-Hsin Liu ,  Chih-Wen Yao ,  Hsiao Chin Tuan

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7827 ,  H01L29/0653 ,  H01L29/41766 ,  H01L29/66666 ,  H01L29/66712 ,  H01L29/7809

摘要： A semiconductor device provides a high breakdown voltage and a low turn-on resistance. The device includes: a substrate; a buried n+ layer disposed in the substrate; an n-epi layer disposed over the buried n+ layer; a p-well disposed in the n-epi layer; a source n+ region disposed in the p-well and connected to a source contact on one side; a first insulation layer disposed on top of the p-well and the n-epi layer; a gate disposed on top of the first insulation layer; and a metal electrode extending from the buried n+ layer to a drain contact, wherein the metal electrode is insulated from the n-epi layer and the p-well using by a second insulation layer.

摘要翻译： 半导体器件提供高击穿电压和低导通电阻。 该装置包括：基板; 埋设在衬底中的n +层; 设置在掩埋的n +层上的n外延层; 设置在n外延层中的p阱; 源极n +区域，设置在p阱中并连接到一侧的源极触点; 设置在p阱和n外延层顶部的第一绝缘层; 设置在所述第一绝缘层的顶部上的栅极; 以及从掩埋n +层延伸到漏极接触的金属电极，其中金属电极通过第二绝缘层与n外延层和p阱绝缘。

公开(公告)号：US08513712B2

公开(公告)日：2013-08-20

申请号：US12568575

申请日：2009-09-28

申请人： Chen-Liang Chu ,  Fei-Yuh Chen ,  Chih-Wen Yao

发明人： Chen-Liang Chu ,  Fei-Yuh Chen ,  Chih-Wen Yao

IPC分类号： H01L29/80 ,  H01L29/66

CPC分类号： H01L29/4238 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66477 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7835

摘要： The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material.

公开(公告)号：US09698044B2

公开(公告)日：2017-07-04

申请号：US13308957

申请日：2011-12-01

申请人： Alex Kalnitsky ,  Chih-Wen Yao ,  Jun Cai ,  Ruey-Hsin Liu ,  Hsiao-Chin Tuan

发明人： Alex Kalnitsky ,  Chih-Wen Yao ,  Jun Cai ,  Ruey-Hsin Liu ,  Hsiao-Chin Tuan

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L27/092 ,  H01L21/265 ,  H01L29/10 ,  H01L21/8234 ,  H01L21/8238

CPC分类号： H01L21/76237 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/76216 ,  H01L21/823456 ,  H01L21/823481 ,  H01L21/82385 ,  H01L21/823878 ,  H01L27/0921 ,  H01L29/1087

摘要： A semiconductor structure includes a substrate, a first power device and a second power device in the substrate, at least one isolation feature between the first and second power device, and a trapping feature adjoining the at least one isolation feature in the substrate.