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20 条记录 (耗时 0.037 秒)

    METHOD AND APPARATUS FOR MEASURING ISOELECTRIC POINT USING FIELD EFFECT TRANSISTOR
    2.
    发明申请
    METHOD AND APPARATUS FOR MEASURING ISOELECTRIC POINT USING FIELD EFFECT TRANSISTOR 失效
    使用场效应晶体管测量电压点的方法和装置

    公开(公告)号：US20110139637A1

    公开(公告)日：2011-06-16

    申请号：US13058120

    申请日：2008-12-16

    申请人： Chil Seong Ah ,  Ansoon Kim ,  Chan Woo Park ,  Chang-Geun Ahn ,  Jong-Heon Yang ,  In Bok Baek ,  Taeyoub Kim ,  Gun Yong Sung ,  Seon-Hee Park ,  Han Young Yu

    发明人： Chil Seong Ah ,  Ansoon Kim ,  Chan Woo Park ,  Chang-Geun Ahn ,  Jong-Heon Yang ,  In Bok Baek ,  Taeyoub Kim ,  Gun Yong Sung ,  Seon-Hee Park ,  Han Young Yu

    IPC分类号： G01N27/403 ,  G01N27/414

    CPC分类号： G01N27/4145

    摘要： Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining as the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.

    摘要翻译： 提供了使用场效应晶体管测量等电点的方法和装置。 该方法包括提供场效应晶体管，该场效应晶体管包括衬底，设置在衬底上的源电极和漏极彼此间隔开的沟道区，以及在源电极和漏电极之间的沟道区域，提供具有第一浓度到沟道的第一电解质溶液 区域，并且测量源极和漏极之间的沟道区的第一电流值，提供具有大于第一浓度的第二浓度的第二电解质溶液，并测量源极之间的沟道区的第二电流值 和漏电极，并且使用第一和第二电流值之间的差来确定场效应晶体管的等电点或设置在场效应晶体管上的材料。

    Method and apparatus for measuring isoelectric point using field effect transistor
    3.
    发明授权
    Method and apparatus for measuring isoelectric point using field effect transistor 失效
    使用场效应晶体管测量等电点的方法和装置

    公开(公告)号：US08628650B2

    公开(公告)日：2014-01-14

    申请号：US13058120

    申请日：2008-12-16

    申请人： Chil Seong Ah ,  Ansoon Kim ,  Chan Woo Park ,  Chang-Geun Ahn ,  Jong-Heon Yang ,  In Bok Baek ,  Taeyoub Kim ,  Gun Yong Sung ,  Seon-Hee Park ,  Han Young Yu

    发明人： Chil Seong Ah ,  Ansoon Kim ,  Chan Woo Park ,  Chang-Geun Ahn ,  Jong-Heon Yang ,  In Bok Baek ,  Taeyoub Kim ,  Gun Yong Sung ,  Seon-Hee Park ,  Han Young Yu

    IPC分类号： B03C5/02

    CPC分类号： G01N27/4145

    摘要： Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.

    摘要翻译： 提供了使用场效应晶体管测量等电点的方法和装置。 该方法包括提供场效应晶体管，该场效应晶体管包括衬底，设置在衬底上的源电极和漏极彼此间隔开的沟道区，以及在源电极和漏电极之间的沟道区域，提供具有第一浓度到沟道的第一电解质溶液 区域，并且测量源极和漏极之间的沟道区的第一电流值，提供具有大于第一浓度的第二浓度的第二电解质溶液，并测量源极之间的沟道区的第二电流值 和漏电极，并且使用第一和第二电流值之间的差来确定场效应晶体管的等电点或设置在场效应晶体管上的材料。

    SUBSTRATE FOR ANALYZING COVERAGE OF SELF-ASSEMBLED MOLECULES AND ANALYZING METHOD USING THE SAME
    9.
    发明申请
    SUBSTRATE FOR ANALYZING COVERAGE OF SELF-ASSEMBLED MOLECULES AND ANALYZING METHOD USING THE SAME 审中-公开
    用于分析自组装分子的覆盖的基板和使用其的分析方法

    公开(公告)号：US20100015718A1

    公开(公告)日：2010-01-21

    申请号：US12517769

    申请日：2007-11-26

    申请人： Chil-Seong Ah ,  Ansoon Kim ,  Han-Young Yu ,  Chang-Geun Ahn ,  Jong-Heon Yang ,  In-Bok Baek ,  Chan-Woo Park ,  Seongjae Lee

    发明人： Chil-Seong Ah ,  Ansoon Kim ,  Han-Young Yu ,  Chang-Geun Ahn ,  Jong-Heon Yang ,  In-Bok Baek ,  Chan-Woo Park ,  Seongjae Lee

    IPC分类号： G01N33/00

    CPC分类号： G01N33/5308 ,  C12Q1/6825 ,  G01N33/54313 ,  G01N33/54393 ,  Y10T436/143333

    摘要： Provided are a substrate for analyzing the coverage of self-assembled molecules and a method for analyzing the coverage of the self-assembled molecules in nanowire and nanochannel patterned on solid surface, solid surface, or bulk solid surface by using the nanoparticles. According to the method, the presence of specific functional groups of self-assembled molecules and the degree of reaction can be analyzed by introducing nanoparticles to a biomaterial immobilization substrate including self-assembled molecules and measuring the number of gold nanoparticles existing on the surface. The substrate for analyzing the coverage of self-assembled molecules includes: a biomaterial immobilization substrate; a self-assembled molecular layer formed on the substrate and having a functional group capable of reacting with an amine group; a capture DNA molecule having an amine group bounded to the self-assembled molecular layer; and a probe DNA molecule bound to the capture DNA molecule and having nanoparticles attached to on the surface.

    摘要翻译： 本发明提供了一种用于分析自组装分子的覆盖物的底物以及通过使用纳米颗粒分析在固体表面，固体表面或体固体表面上图案化的纳米线和纳米通道中的自组装分子的覆盖率的方法。 根据该方法，可以通过将纳米颗粒引入包括自组装分子的生物材料固定化基质并测量表面上存在的金纳米颗粒的数量来分析自组装分子的特定官能团的存在和反应程度。 用于分析自组装分子的覆盖的底物包括：生物材料固定基质; 形成在基板上并具有能够与胺基反应的官能团的自组装分子层; 具有与自组装分子层结合的胺基的捕获DNA分子; 和与捕获DNA分子结合并且具有附着在表面上的纳米颗粒的探针DNA分子。