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公开(公告)号：US5471092A
公开(公告)日：1995-11-28
申请号：US360528
申请日：1994-12-21
CPC分类号： H01L24/10 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15787
摘要： A metallurgical joint structure between two workpieces to be joined by soldering or brazing includes a stress release layer of a low yield point metal, preferably silver, gold, copper, palladium or platinum. The joint structure also includes a juxtaposed barrier layer to prevent the diffusion of a solder element, such as tin, to the stress release layer. Preferred barrier layers are chromium, titanium-tungsten and tantalum. Preferably, the joint includes one or more stress relief layer and associated barrier layer combinations in the joint structure for improved joint reliability.
摘要翻译： 通过焊接或钎焊连接的两个工件之间的冶金接头结构包括低屈服点金属，优选银，金，铜，钯或铂的应力释放层。 接头结构还包括并排的阻挡层，以防止诸如锡的焊料元素扩散到应力释放层。 优选的阻挡层是铬，钛 - 钨和钽。 优选地，接头包括一个或多个应力消除层和联接结构中的相关联的阻挡层组合，以改善接头的可靠性。
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2.发明授权
公开(公告)号：US5582927A
公开(公告)日：1996-12-10
申请号：US349475
申请日：1994-12-05
申请人： Panayotis C. Andricacos , Jei-Wei Chang , Wilma J. Horkans , Judith D. Olsen , Bojan Petek , Lubomyr T. Romankiw
发明人： Panayotis C. Andricacos , Jei-Wei Chang , Wilma J. Horkans , Judith D. Olsen , Bojan Petek , Lubomyr T. Romankiw
IPC分类号： C23C14/14 , G11B5/31 , H01F10/16 , H01F10/30 , H01F10/32 , H01F41/26 , H05K9/00 , G11B5/66 , C25D5/18
CPC分类号： H01F41/26 , B82Y25/00 , G11B5/31 , H01F10/16 , H01F10/30 , H01F10/324 , H05K9/0075 , Y10S428/90 , Y10T428/115 , Y10T428/12771 , Y10T428/12778 , Y10T428/12903 , Y10T428/1291 , Y10T428/12917
摘要： Certain alloys of CoFeCu are provided in film and laminate form which have a unique combination of electromagnetic properties which enable them to be used as magnetic thin films in magnetic recording heads, shields and flux guides. The films and laminates thereof are electrodeposited from a plating bath in a DC or pulsed current electrodeposition process.
摘要翻译： CoFeCu的某些合金以膜和层压形式提供，其具有电磁特性的独特组合，使得它们能够用作磁记录头，屏蔽件和助焊剂引导件中的磁性薄膜。 其膜和层压体在直流或脉冲电流电沉积工艺中从镀浴电沉积。
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公开(公告)号：US5132859A
公开(公告)日：1992-07-21
申请号：US571944
申请日：1990-08-23
CPC分类号： B82Y25/00 , G11B5/3113 , G11B5/3153 , H01F10/32 , H01F10/3281 , G11B5/3903 , G11B5/3919 , Y10S428/928
摘要： A magnetic thin film structure comprising a first layer of magnetic material having a low anisotropy H.sub.k magnetically coupled to a second layer magnetic material having a high anisotropy H.sub.k and a low coercivity. The laminate provides a dual anisotropy behavior such that the laminate exhibits a high initial permeability at relatively small applied fields during the read operation and a high anisotropy at high applied fields during the write operation. The laminate of the present invention reduces inductive head domain instability produced by the write operation while maintaining high reproducing sensitivity during the read operation. Use of the higher H.sub.k material also reduces the sensitivity of the head performance to variation in process-induced stresses.
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公开(公告)号：US09064628B2
公开(公告)日：2015-06-23
申请号：US13477978
申请日：2012-05-22
申请人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
CPC分类号： H01F27/2804 , H01F5/00 , H01F17/0013 , H01F2017/0066 , H01F2017/0086 , H01F2027/2809 , H01L28/10
摘要： A thin film coupled inductor, a thin film spiral inductor, and a system that includes an electronic device and a power supply or power converter incorporating one or more such inductors. A thin film coupled inductor includes a wafer substrate; a bottom yoke comprising a magnetic material above the wafer substrate; a first insulating layer above the bottom yoke; a first conductor above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the first conductor; a second conductor above the second insulating layer; a third insulating layer above the second conductor; and a non-planar top yoke above the third insulating layer, the top yoke comprising a magnetic material.
摘要翻译： 薄膜耦合电感器，薄膜螺旋电感器以及包括电子器件和并入一个或多个此类电感器的电源或功率转换器的系统。 薄膜耦合电感器包括晶片衬底; 底部轭，其包括晶片衬底上方的磁性材料; 在底部轭上方的第一绝缘层; 第一导体，位于底部磁轭之上并由第一绝缘层分离; 在所述第一导体上方的第二绝缘层; 在第二绝缘层上方的第二导体; 在第二导体上方的第三绝缘层; 以及在第三绝缘层上方的非平面顶部磁轭，顶部磁轭包括磁性材料。
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公开(公告)号：US20110272287A1
公开(公告)日：2011-11-10
申请号：US12776010
申请日：2010-05-07
申请人： Elizabeth A. Duch , Ronald Goldblatt , David L. Rath , Lubomyr T. Romankiw , Xiaoyan Shao , Steven E. Steen , James Vichiconti
发明人： Elizabeth A. Duch , Ronald Goldblatt , David L. Rath , Lubomyr T. Romankiw , Xiaoyan Shao , Steven E. Steen , James Vichiconti
IPC分类号： C25D5/34
摘要： A method of patterning magnetic devices and sensors by double etching, which includes forming a layer of dielectric on a substrate; depositing a thin adhesion layer and a thin seed layer; applying a thin resist frame to pattern a structure; cleaning the metal surface to prepare for plating; electroplating to fill up the structure and the uncovered field area, which uses a paddle cell with a permanent magnet providing magnetic field to induce magnetic orientation; stripping the resist frame; etching the seed layer/adhesion layer exposed below the resist frame down to the dielectric surface; etching the rest of magnetic materials and the seed layer using electrolytic etching in the field; etching the adhesion layer in the field, and repeating the steps for building structures with multiple levels.
摘要翻译： 一种通过双蚀刻图案化磁性器件和传感器的方法，包括在衬底上形成电介质层; 沉积薄的粘合层和薄的种子层; 施加薄的抗蚀剂框架以构图结构; 清洗金属表面进行电镀准备; 电镀以填充结构和未覆盖的场区域，其使用具有提供磁场的永磁体的桨电池来诱导磁取向; 剥离抗蚀框架; 将暴露在抗蚀剂框架下方的种子层/粘合层蚀刻到电介质表面; 在现场使用电解蚀刻蚀刻其余的磁性材料和种子层; 在现场蚀刻粘合层，并重复用于建造具有多层结构的步骤。
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公开(公告)号：US07944006B2
公开(公告)日：2011-05-17
申请号：US12014511
申请日：2008-01-15
申请人： Veeraraghavan S. Basker , Hariklia Deligianni , Rajarao Jammy , Vamsi Krishna Paruchuri , Lubomyr T. Romankiw
发明人： Veeraraghavan S. Basker , Hariklia Deligianni , Rajarao Jammy , Vamsi Krishna Paruchuri , Lubomyr T. Romankiw
IPC分类号： H01L29/78
CPC分类号： C25D3/567 , C25D5/02 , C25D7/12 , H01L21/28079 , H01L21/28088 , H01L21/28176 , H01L29/495 , H01L29/4966 , H01L29/517
摘要： Stabilized metal gate electrode for complementary metal-oxide-semiconductor (“CMOS”) applications and methods of making the stabilized metal gate electrodes are disclosed. Specifically, the metal gate electrodes are stabilized by alloying wherein the alloy comprises a metal selected from the group consisting of Re, Ru, Pt, Rh, Ni, Al and combinations thereof and an element selected from the group consisting of W, V, Ti, Ta and combinations thereof.
摘要翻译： 公开了用于互补金属氧化物半导体（“CMOS”）应用的稳定金属栅极电极和制造稳定的金属栅电极的方法。 具体地说，金属栅电极通过合金化来稳定化，其中合金包括选自Re，Ru，Pt，Rh，Ni，Al及其组合的金属和选自W，V，Ti ，Ta及其组合。
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7.发明授权公开(公告)号：US07785982B2
公开(公告)日：2010-08-31
申请号：US11620224
申请日：2007-01-05
申请人： Stephen W. Bedell , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw , Devendra K. Sadana , Katherine L. Saenger
发明人： Stephen W. Bedell , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L21/76
CPC分类号： H01L21/823807 , H01L21/0237 , H01L21/02532 , H01L21/02628 , H01L21/02636 , H01L21/02639 , H01L21/28255 , H01L29/1054 , H01L29/78
摘要： Methods for electrodepositing germanium on various semiconductor substrates such as Si, Ge, SiGe, and GaAs are provided. The electrodeposited germanium can be formed as a blanket or patterned film, and may be crystallized by solid phase epitaxy to the orientation of the underlying semiconductor substrate by subsequent annealing. These plated germanium layers may be used as the channel regions of high-mobility channel field effect transistors (FETs) in complementary metal oxide semiconductor (CMOS) circuits.
摘要翻译： 提供了在诸如Si，Ge，SiGe和GaAs的各种半导体衬底上电沉积锗的方法。 电沉积锗可以形成为覆盖或图案化的膜，并且可以通过后续退火使固相外延结晶到下面的半导体衬底的取向。 这些电镀锗层可以用作互补金属氧化物半导体（CMOS）电路中的高迁移率沟道场效应晶体管（FET）的沟道区。
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公开(公告)号：US20090294989A1
公开(公告)日：2009-12-03
申请号：US12538782
申请日：2009-08-10
IPC分类号： H01L23/48
CPC分类号： H01L21/76879 , H01L21/2885 , Y10S205/925
摘要： The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.
摘要翻译： 本发明涉及通过电镀形成垂直导电结构的方法。 具体地，首先形成模板结构，其包括衬底，位于衬底表面上的离散金属接触焊盘，分立金属接触焊盘和衬底两者之间的级间电介质（ILD）层，以及金属通孔结构 延伸穿过ILD层到分立的金属接触垫上。 接下来，在模板结构中形成垂直通孔，其延伸穿过ILD层到分立的金属接触垫上。 然后通过电镀在垂直通孔中形成垂直导电结构，电镀通过通过金属通孔结构将电镀电流施加到离散的金属接触焊盘来进行。 优选地，模板结构包括多个分立的金属接触焊盘，多个金属通孔结构以及用于形成多个垂直导电结构的多个垂直通孔。
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公开(公告)号：US5522975A
公开(公告)日：1996-06-04
申请号：US441852
申请日：1995-05-16
申请人： Panayotis C. Andricacos , Kirk G. Berridge , John O. Dukovic , Helmut R. Poweleit , Jeffrey S. Richter , Lubomyr T. Romankiw , Otto P. Schick
发明人： Panayotis C. Andricacos , Kirk G. Berridge , John O. Dukovic , Helmut R. Poweleit , Jeffrey S. Richter , Lubomyr T. Romankiw , Otto P. Schick
IPC分类号： C25D17/06
CPC分类号： C25D17/06
摘要： A fixture for supporting a workpiece in a processing cell includes a frame and cooperating workpiece holder. The frame includes a head having a hole therein which receives an integral plateau of the holder. The holder plateau includes an annular seal adjacent a perimeter thereof with a vacuum port disposed therein. The workpiece rests on the seal so that vacuum drawn in the vacuum port fixedly holds the workpiece against the plateau. Assembly of the holder plateau and workpiece thereon through the frame-head hole positions the workpiece coplanar with a front side of the frame. In exemplary embodiments, independent electrical current paths are provided to the workpiece and a surrounding auxiliary electrode.
摘要翻译： 用于在处理室中支撑工件的夹具包括框架和配合的工件保持器。 框架包括其中具有孔的头部，其接收保持器的整体平台。 保持架平台包括邻近其周边的环形密封件，其中布置有真空口。 工件放在密封件上，使真空吸入的真空固定地保持工件抵抗平台。 通过框架头孔将支架平台和其上的工件组装在一起，使工件与框架的前侧共面。 在示例性实施例中，独立的电流路径被提供给工件和周围的辅助电极。
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10.发明授权Magnetic recording head with integrated magnetoresistive element and open yoke 失效磁性录音头与集成磁性元件和开放的YOKE
公开(公告)号：US5164869A
公开(公告)日：1992-11-17
申请号：US661797
申请日：1991-02-27
CPC分类号： G11B5/3967
摘要： An integrated inductive write, magnetoresistive (MR) read thin film magnetic head comprising an open magnetic yoke having outside legs each having a winding thereon and a central leg having an opening across which the MR element is coupled. The outer legs are overlapped at one end to form confronting pole pieces having a transducing gap between the pole pieces, and the central leg is positioned between the pole pieces at one end and joined with the outer legs at the other end to form a symmetrical magnetic yoke structure. The windings are wound in a direction so that the flux produced by equally energizing the windings is equal and opposite in each of the outside legs, is additive at the transducing gap between the pole pieces, and produces no net flux through the central leg.
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