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1.发明授权Method and system for measuring laser induced phenomena changes in a semiconductor device 有权用于测量半导体器件中的激光诱发现象变化的方法和系统公开(公告)号：US07456032B2
公开(公告)日：2008-11-25
申请号：US11158945
申请日：2005-06-21
IPC分类号： G01R31/26
CPC分类号： G01R31/311 , G01R17/105
摘要： A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises interconnecting an electrical bridge circuit across the semiconductor device, the semiconductor device being connected as one of at least four circuit elements of the bridge circuit; inducing the changes in the semiconductor; and monitoring a balance condition of the bridge circuit.
摘要翻译： 一种用于测量半导体器件中的电阻，电容和电感中的至少一个的激光感应现象变化的方法和系统。 该方法包括跨越半导体器件互连电桥电路，该半导体器件被连接为桥接电路的至少四个电路元件之一; 引起半导体的变化; 并监测桥接电路的平衡状态。
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公开(公告)号：US07623982B2
公开(公告)日：2009-11-24
申请号：US11935401
申请日：2007-11-05
申请人： Choon Meng Chua , Alfred Cheng Teck Quah , Soon Huat Tan , Lian Ser Koh , Jacob Chee Hong Phang
发明人： Choon Meng Chua , Alfred Cheng Teck Quah , Soon Huat Tan , Lian Ser Koh , Jacob Chee Hong Phang
CPC分类号： G06F11/24 , G01R31/311
摘要： A method of testing an electronic circuit is provided. The method comprises radiating a laser beam onto the electronic circuit, and determining a plurality of samples of a response signal output by the electronic circuit during the period when the laser beam is radiated. The method further comprises accumulating the plurality of samples to generate a value, and generating a test result based on the value.
摘要翻译： 提供一种测试电子电路的方法。 该方法包括将激光束照射到电子电路上，并且确定在激光束照射期间由电子电路输出的响应信号的多个样本。 该方法还包括累积多个采样以产生一个值，并且基于该值产生测试结果。
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公开(公告)号：US06897664B1
公开(公告)日：2005-05-24
申请号：US10261390
申请日：2002-09-30
申请人： Michael Bruce , Gregory A. Dabney , Palaniappan Muthupalaniappan , Jiann Min Chin , Richard Jacob Wilcox , Glen Gilfeather , Brennan Davis , Jacob Phang , Choon Meng Chua , Lian Ser Koh , Hoo-Yin Ng , Soon Huat Tan
发明人： Michael Bruce , Gregory A. Dabney , Palaniappan Muthupalaniappan , Jiann Min Chin , Richard Jacob Wilcox , Glen Gilfeather , Brennan Davis , Jacob Phang , Choon Meng Chua , Lian Ser Koh , Hoo-Yin Ng , Soon Huat Tan
IPC分类号： G01R31/305 , G01R31/311
CPC分类号： G01R31/311
摘要： Apparatus for and methods of inspection using laser beam induced alteration are provided. In one aspect, an apparatus is provided that includes a laser scanning microscope for directing a laser beam at a circuit structure and a source for biasing and thereby establishing a power condition in the circuit structure. A detection circuit is provided for detecting a change in the power condition in response to illumination of the circuit structure by the laser beam and generating a first output signal based on the detected change. A signal processor is provided for processing the first output signal and generating a second output signal based thereon. A control system is operable to scan the laser beam according to a pattern that has a plurality of pixel locations, whereby the laser beam may be moved to a given pixel location and allowed to dwell there for a selected time before being moved to another pixel location.
摘要翻译： 提供了使用激光束诱发改变的装置和检查方法。 在一个方面，提供了一种装置，其包括用于将电路结构的激光束引导的激光扫描显微镜和用于偏置的源，从而在电路结构中建立功率状态。 提供一种检测电路，用于响应于激光束对电路结构的照明而检测功率状态的变化，并且基于检测到的变化产生第一输出信号。 提供信号处理器用于处理第一输出信号并基于此产生第二输出信号。 控制系统可操作以根据具有多个像素位置的图案来扫描激光束，由此激光束可以移动到给定的像素位置，并允许其在移动到另一像素位置之前在选定的时间停留 。
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4.发明授权Method and system for measuring laser induced phenomena changes in a semiconductor device 有权用于测量半导体器件中的激光诱发现象变化的方法和系统公开(公告)号：US08278959B2
公开(公告)日：2012-10-02
申请号：US12372914
申请日：2009-02-18
IPC分类号： G01R31/02 , G01R31/302
CPC分类号： G01R31/311
摘要： A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises applying a biasing voltage from an emitter-follower circuit to a device under test (DUT); inducing said changes in the DUT; and measuring a voltage change in a collector portion of the emitter-follower circuit as a measure for said changes.
摘要翻译： 一种用于测量半导体器件中的电阻，电容和电感中的至少一个的激光感应现象变化的方法和系统。 该方法包括将来自射极跟随器电路的偏置电压施加到被测器件（DUT）; 引起DUT的变化; 并且测量发射极跟随器电路的集电极部分的电压变化作为所述变化的量度。
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公开(公告)号：US20100315617A1
公开(公告)日：2010-12-16
申请号：US12483432
申请日：2009-06-12
IPC分类号： G03B27/58
CPC分类号： G03B27/58
摘要： A wafer stage and a method of supporting a wafer for inspection. the wafer stage comprises a platform for supporting a wafer such that a backside of the wafer is suspended above a cavity of the platform; and a support structure disposed substantially within the cavity for supporting a portion of the wafer; wherein the wafer stage is adapted for relative movement of the platform with respect to the support structure for alignment of the wafer with respect to a probe.
摘要翻译： 晶片台和支撑晶片进行检查的方法。 晶片台包括用于支撑晶片的平台，使得晶片的背面悬挂在平台的空腔上方; 以及基本上设置在所述腔内的支撑结构，用于支撑所述晶片的一部分; 其中所述晶片台适于所述平台相对于所述支撑结构的相对运动，用于相对于探针对准所述晶片。
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公开(公告)号：US20130241587A1
公开(公告)日：2013-09-19
申请号：US13887427
申请日：2013-05-06
IPC分类号： G01R1/04
CPC分类号： G01R1/04 , G01N21/9501 , G01N21/956 , G01R31/2893 , G01R31/311
摘要： A wafer stage and a method of supporting a wafer for inspection. the wafer stage comprises a platform for supporting a wafer such that a backside of the wafer is suspended above a cavity of the platform; and a support structure disposed substantially within the cavity for supporting a portion of the wafer; wherein the wafer stage is adapted for relative movement of the platform with respect to the support structure for alignment of the wafer with respect to a probe.
摘要翻译： 晶片台和支撑晶片进行检查的方法。 晶片台包括用于支撑晶片的平台，使得晶片的背面悬挂在平台的空腔上方; 以及基本上设置在所述腔内的支撑结构，用于支撑所述晶片的一部分; 其中所述晶片台适于所述平台相对于所述支撑结构的相对运动，用于相对于探针对准所述晶片。
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公开(公告)号：US20100321678A1
公开(公告)日：2010-12-23
申请号：US12486509
申请日：2009-06-17
IPC分类号： G01N21/956 , G02B7/02
CPC分类号： G02B21/33
摘要： A solid immersion lens optics assembly, a test station for probing and testing of integrated circuits on a semiconductor wafer, and a method of landing a SIL on an object. The optics assembly comprises an objective lens housing for receiving an objective lens, and a solid immersion lens (SIL) housing for mounting an SIL and adapted for connection to the objective lens housing; wherein a peripheral wall of the SIL housing comprises an integrated spring section adapted to provide a biased support for the SIL.
摘要翻译： 固体浸没透镜光学组件，用于在半导体晶片上的集成电路的探测和测试的测试台以及将SIL着陆在物体上的方法。 光学组件包括用于接收物镜的物镜壳体和用于安装SIL并适于连接到物镜壳体的固体浸没透镜（SIL）壳体; 其中所述SIL壳体的周壁包括适于为所述SIL提供偏置支撑的整体弹簧部分。
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公开(公告)号：US08436631B2
公开(公告)日：2013-05-07
申请号：US12483432
申请日：2009-06-12
IPC分类号： G01R31/00
CPC分类号： G03B27/58
摘要： A wafer stage and a method of supporting a wafer for inspection. the wafer stage comprises a platform for supporting a wafer such that a backside of the wafer is suspended above a cavity of the platform; and a support structure disposed substantially within the cavity for supporting a portion of the wafer; wherein the wafer stage is adapted for relative movement of the platform with respect to the support structure for alignment of the wafer with respect to a probe.
摘要翻译： 晶片台和支撑晶片进行检查的方法。 晶片台包括用于支撑晶片的平台，使得晶片的背面悬挂在平台的空腔上方; 以及基本上设置在所述腔内的支撑结构，用于支撑所述晶片的一部分; 其中所述晶片台适于所述平台相对于所述支撑结构的相对运动，用于相对于探针对准所述晶片。
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公开(公告)号：US08072699B2
公开(公告)日：2011-12-06
申请号：US12486509
申请日：2009-06-17
CPC分类号： G02B21/33
摘要： A solid immersion lens optics assembly, a test station for probing and testing of integrated circuits on a semiconductor wafer, and a method of landing a SIL on an object. The optics assembly comprises an objective lens housing for receiving an objective lens, and a solid immersion lens (SIL) housing for mounting an SIL and adapted for connection to the objective lens housing; wherein a peripheral wall of the SIL housing comprises an integrated spring section adapted to provide a biased support for the SIL.
摘要翻译： 固体浸没透镜光学组件，用于在半导体晶片上的集成电路的探测和测试的测试台以及将SIL着陆在物体上的方法。 光学组件包括用于接收物镜的物镜壳体和用于安装SIL并适于连接到物镜壳体的固体浸没透镜（SIL）壳体; 其中所述SIL壳体的周壁包括适于为所述SIL提供偏置支撑的整体弹簧部分。
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10.发明申请METHOD AND SYSTEM FOR MEASURING LASER INDUCED PHENOMENA CHANGES IN A SEMICONDUCTOR DEVICE 有权用于测量半导体器件中的激光诱导电位变化的方法和系统公开(公告)号：US20100156451A1
公开(公告)日：2010-06-24
申请号：US12372914
申请日：2009-02-18
IPC分类号： G01R31/26
CPC分类号： G01R31/311
摘要： A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises applying a biasing voltage from an emitter-follower circuit to a device under test (DUT); inducing said changes in the DUT; and measuring a voltage change in a collector portion of the emitter-follower circuit as a measure for said changes.
摘要翻译： 一种用于测量半导体器件中的电阻，电容和电感中的至少一个的激光感应现象变化的方法和系统。 该方法包括将来自射极跟随器电路的偏置电压施加到被测器件（DUT）; 引起DUT的变化; 并且测量发射极跟随器电路的集电极部分的电压变化作为所述变化的量度。
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