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公开(公告)号:US06878603B2
公开(公告)日:2005-04-12
申请号:US10167961
申请日:2002-06-11
申请人: Christoph Bromberger , Franz Dietz , Volker Dudek , Michael Graf , Joern Herrfurth , Manfred Klaussner
发明人: Christoph Bromberger , Franz Dietz , Volker Dudek , Michael Graf , Joern Herrfurth , Manfred Klaussner
IPC分类号: H01L29/786 , H01L21/265 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/78 , H01L21/20 , H01L21/331 , H01L21/425 , H01L21/76
CPC分类号: H01L29/0878 , H01L21/26586 , H01L29/0653 , H01L29/0847 , H01L29/66659 , H01L29/7835
摘要: In a new process of making a DMOS transistor, the doping of the sloping side walls can be set independently from the doping of the floor region in a trench structure. Furthermore, different dopings can be established among the side walls. This is achieved especially by a sequence of implantation doping, etching to form the trench, formation of a scattering oxide protective layer on the side walls, and two-stage perpendicular and tilted final implantation doping. For DMOS transistors, this achieves high breakthrough voltages even with low turn-on resistances, and reduces the space requirement, in particular with regard to driver structures.
摘要翻译: 在制造DMOS晶体管的新工艺中,倾斜侧壁的掺杂可以独立于沟槽结构中底层区域的掺杂来设置。 此外,可以在侧壁之间建立不同的掺杂。 这通过一系列注入掺杂,蚀刻形成沟槽,在侧壁上形成散射氧化物保护层以及两级垂直和倾斜的最终注入掺杂来实现。 对于DMOS晶体管,即使使用低导通电阻也能实现高的突破电压,并且特别是关于驱动器结构,减少了空间需求。
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公开(公告)号:US06933215B2
公开(公告)日:2005-08-23
申请号:US10170098
申请日:2002-06-11
申请人: Christoph Bromberger , Franz Dietz , Volker Dudek , Michael Graf , Joern Herrfurth , Manfred Klaussner
发明人: Christoph Bromberger , Franz Dietz , Volker Dudek , Michael Graf , Joern Herrfurth , Manfred Klaussner
IPC分类号: H01L21/265 , H01L21/336 , H01L21/762 , H01L29/06 , H01L29/08 , H01L29/78 , H01L21/266
CPC分类号: H01L29/0847 , H01L21/2652 , H01L21/26586 , H01L21/76232 , H01L21/76237 , H01L29/0653 , H01L29/66659 , H01L29/7835
摘要: In a method of producing a doped semiconductor structure with a trench, it is possible to set the doping of the trench side walls independently from the doping of the trench bottom, and to set different doping concentrations of the individual trench side walls relative to each other. In the method, a mask layer with a window therein is provided on a surface of a semiconductor body, and then a first doping step, a trench etching step, and a second doping step are carried out successively through this window while this one mask layer remains in place on the surface of the semiconductor body. Further etching and doping steps can be carried out successively also through this window of the mask layer.
摘要翻译: 在制造具有沟槽的掺杂半导体结构的方法中,可以独立于沟槽底部的掺杂来设置沟槽侧壁的掺杂,并且设置各个沟槽侧壁相对于彼此的不同掺杂浓度 。 在该方法中,在半导体本体的表面上设置有具有窗口的掩模层,然后通过该窗口连续地进行第一掺杂工序,沟槽蚀刻工序和第二掺杂工序,同时将该一个掩模层 保持在半导体主体的表面上的适当位置。 进一步的蚀刻和掺杂步骤也可以通过掩模层的这个窗口连续进行。
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公开(公告)号:US06806131B2
公开(公告)日:2004-10-19
申请号:US10167960
申请日:2002-06-11
申请人: Christoph Bromberger , Franz Dietz , Volker Dudek , Michael Graf , Joern Herrfurth , Manfred Klaussner
发明人: Christoph Bromberger , Franz Dietz , Volker Dudek , Michael Graf , Joern Herrfurth , Manfred Klaussner
IPC分类号: H01L218238
CPC分类号: H01L29/0886 , H01L21/26586 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/1095 , H01L29/66659 , H01L29/66681 , H01L29/7824 , H01L29/7835
摘要: In a new process of making a DMOS transistor, the doping of the sloping side walls can be set independently from the doping of the floor region in a trench structure. Furthermore, different dopings can be established among the side walls. This is achieved especially by a sequence of implantation doping, etching to form the trench, formation of a scattering oxide protective layer on the side walls, and two-stage perpendicular and tilted final implantation doping. For DMOS transistors, this achieves high breakthrough voltages even with low turn-on resistances, and reduces the space requirement, in particular with regard to driver structures.
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公开(公告)号:US06780713B2
公开(公告)日:2004-08-24
申请号:US10167959
申请日:2002-06-11
申请人: Christoph Bromberger , Franz Dietz , Volker Dudek , Michael Graf , Joern Herrfurth , Manfred Klaussner
发明人: Christoph Bromberger , Franz Dietz , Volker Dudek , Michael Graf , Joern Herrfurth , Manfred Klaussner
IPC分类号: H01L21336
CPC分类号: H01L29/0886 , H01L21/26586 , H01L29/0653 , H01L29/0847 , H01L29/66659 , H01L29/66681 , H01L29/7824 , H01L29/7835
摘要: In a new process of making a DMOS transistor, the doping of the sloping side walls can be set independently from the doping of the floor region in a trench structure. Furthermore, different dopings can be established among the side walls. This is achieved especially by a sequence of implantation doping, etching to form the trench, formation of a scattering oxide protective layer on the side walls, and two-stage perpendicular and tilted final implantation doping. For DMOS transistors, this achieves high breakthrough voltages even with low turn-on resistances, and reduces the space requirement, in particular with regard to driver structures.
摘要翻译: 在制造DMOS晶体管的新工艺中,倾斜侧壁的掺杂可以独立于沟槽结构中底层区域的掺杂来设置。 此外,可以在侧壁之间建立不同的掺杂。 这通过一系列注入掺杂,蚀刻形成沟槽,在侧壁上形成散射氧化物保护层以及两级垂直和倾斜的最终注入掺杂来实现。 对于DMOS晶体管,即使使用低导通电阻也能实现高的突破电压,并且特别是关于驱动器结构,减少了空间需求。
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