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公开(公告)号：US06646323B2
公开(公告)日：2003-11-11
申请号：US09849730
申请日：2001-05-04
IPC分类号： H01L2900
CPC分类号： H01L28/40 , H01L23/5223 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： The present invention is directed to a structure and method of forming an integrated circuit MIM capacitor having a relatively capacitance without the need for an additional mask step. Methods of forming integrated circuit capacitors include the steps of forming a standard via and one or more enlarged vias in an electrically insulating layer during the same patterning process and then forming an electrically conductive first electrode layer which fills the standard via and overlays the enlarged vias in a conformal manner. A dielectric layer is then formed over the electrically conductive first electrode layer. Next, an electrically conductive second electrode layer is formed over the dielectric layer, which overlays and/or fills the enlarged vias. A step is then performed to planarize the second electrode layer, the dielectric layer, and the first electrode layer to define the electrodes of a capacitor. The resulting capacitor has a relatively large effective electrode surface area (which is a function of the depth of the via) for a given lateral dimension.
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公开(公告)号：US07164186B2
公开(公告)日：2007-01-16
申请号：US10939221
申请日：2004-09-10
IPC分类号： H01L29/70
CPC分类号： H01L29/66272 , H01L29/41708
摘要： A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the buried layer. A second isolation structure is formed adjacent at least a portion of the active region. A base layer is formed adjacent at least a portion of the active region. A dielectric layer is formed adjacent at least a portion of the base layer, and then at least part of the dielectric layer is removed at an emitter contact location and at a sinker contact location. An emitter structure is formed at the emitter contact location. Forming the emitter structure includes etching the semiconductor device at the sinker contact location to form a sinker contact region. The sinker contact region has a first depth. The method may also include forming a gate structure. Forming the gate structure includes etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.
摘要翻译： 半导体器件的制造方法包括形成半导体衬底的掩埋层。 在掩埋层的至少一部分附近形成有源区。 在掩埋层的至少一部分附近形成第一隔离结构。 在活性区域的至少一部分附近形成第二隔离结构。 在活性区域的至少一部分附近形成基底层。 在基底层的至少一部分附近形成电介质层，然后在发射极接触位置和沉降片接触位置移除介电层的至少一部分。 发射极结构形成在发射极接触位置。 形成发射极结构包括在沉降片接触位置蚀刻半导体器件以形成沉降片接触区域。 沉降片接触区域具有第一深度。 该方法还可以包括形成栅极结构。 形成栅极结构包括蚀刻沉降片接触区域，从而将沉降片接触区域的第一深度增加到第二深度。
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3.发明授权公开(公告)号：US06774455B2
公开(公告)日：2004-08-10
申请号：US10262206
申请日：2002-09-30
申请人： Jeffrey A. Babcock , Christoph Dirnecker , Angelo Pinto , Scott G. Balster , Michael Schober , Alfred Haeusler
发明人： Jeffrey A. Babcock , Christoph Dirnecker , Angelo Pinto , Scott G. Balster , Michael Schober , Alfred Haeusler
IPC分类号： H01L29737
CPC分类号： H01L29/66265 , H01L29/41708 , H01L29/66272 , H01L29/7317 , H01L29/732
摘要： A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. At least part of the active region is removed to form a shallow trench opening. A dielectric layer is formed proximate the active region at least partially within the shallow trench opening. At least part of the dielectric layer is removed to form a collector contact region. A collector contact may be formed at the collector contact region. The collector contact may be operable to electrically contact the buried layer.
摘要翻译： 半导体器件的制造方法包括形成半导体衬底的掩埋层。 在掩埋层的至少一部分附近形成有源区。 移除活性区域的至少一部分以形成浅沟槽开口。 在浅沟槽开口内至少部分地在有源区域附近形成电介质层。 去除介电层的至少一部分以形成集电极接触区域。 集电极触点可以在集电极接触区域形成。 集电极触点可操作以电接触埋层。
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4.发明授权公开(公告)号：US06806159B2
公开(公告)日：2004-10-19
申请号：US10262211
申请日：2002-09-30
IPC分类号： H01L21331
CPC分类号： H01L29/66272 , H01L29/41708
摘要： A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the buried layer. A second isolation structure is formed adjacent at least a portion of the active region. A base layer is formed adjacent at least a portion of the active region. A dielectric layer is formed adjacent at least a portion of the base layer, and then at least part of the dielectric layer is removed at an emitter contact location and at a sinker contact location. An emitter structure is formed at the emitter contact location. Forming the emitter structure includes etching the semiconductor device at the sinker contact location to form a sinker contact region. The sinker contact region has a first depth. The method may also include forming a gate structure. Forming the gate structure includes etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.
摘要翻译： 半导体器件的制造方法包括形成半导体衬底的掩埋层。 在掩埋层的至少一部分附近形成有源区。 在掩埋层的至少一部分附近形成第一隔离结构。 在活性区域的至少一部分附近形成第二隔离结构。 在活性区域的至少一部分附近形成基底层。 在基底层的至少一部分附近形成电介质层，然后在发射极接触位置和沉降片接触位置移除介电层的至少一部分。 发射极结构形成在发射极接触位置。 形成发射极结构包括在沉降片接触位置蚀刻半导体器件以形成沉降片接触区域。 沉降片接触区域具有第一深度。 该方法还可以包括形成栅极结构。 形成栅极结构包括蚀刻沉降片接触区域，从而将沉降片接触区域的第一深度增加到第二深度。
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5.发明授权Method of manufacturing a zero mask high density metal/insulator/metal capacitor 有权制造零掩模高密度金属/绝缘体/金属电容器的方法公开(公告)号：US06391707B1
公开(公告)日：2002-05-21
申请号：US09849299
申请日：2001-05-04
IPC分类号： H01L218242
CPC分类号： H01L28/60 , H01L21/3212 , H01L23/5223 , H01L28/90 , H01L29/66181 , H01L2924/0002 , H01L2924/00
摘要： The present invention is directed to a structure and method of forming an integrated circuit MIM capacitor having a relatively capacitance without the need for an additional mask step. Methods of forming integrated circuit capacitors include the steps of forming a standard via and one or more enlarged vias in an electrically insulating layer during the same patterning process and then forming an electrically conductive first electrode layer which fills the standard via and overlays the enlarged vias in a conformal manner. A dielectric layer is then formed over the electrically conductive first electrode layer. Next, an electrically conductive second electrode layer is formed over the dielectric layer, which overlays and/or fills the enlarged vias. A step is then performed to planarize the second electrode layer, the dielectric layer, and the first electrode layer to define the electrodes of a capacitor. The resulting capacitor has a relatively large effective electrode surface area (which is a function of the depth of the via) for a given lateral dimension.
摘要翻译： 本发明涉及形成具有相对电容的集成电路MIM电容器的结构和方法，而不需要额外的掩模步骤。 形成集成电路电容器的方法包括以下步骤：在相同的图案化工艺期间在电绝缘层中形成标准通孔和一个或多个放大通孔，然后形成填充标准通孔的导电第一电极层并覆盖放大的通孔 保形方式。 然后在导电的第一电极层上形成电介质层。 接下来，在电介质层上形成导电的第二电极层，覆盖和/或填充放大的通孔。 然后执行步骤以使第二电极层，电介质层和第一电极层平坦化，以限定电容器的电极。 对于给定的横向尺寸，所得的电容器具有相对较大的有效电极表面积（其是通孔的深度的函数）。
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6.发明申请Method for manufacturing and structure of semiconductor device with sinker contact region 有权具有沉降片接触区域的半导体器件的制造和结构的方法公开(公告)号：US20050037588A1
公开(公告)日：2005-02-17
申请号：US10939221
申请日：2004-09-10
IPC分类号： H01L21/331 , H01L29/417 , H01L27/082 , H01L21/8222
CPC分类号： H01L29/66272 , H01L29/41708
摘要： A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the buried layer. A second isolation structure is formed adjacent at least a portion of the active region. A base layer is formed adjacent at least a portion of the active region. A dielectric layer is formed adjacent at least a portion of the base layer, and then at least part of the dielectric layer is removed at an emitter contact location and at a sinker contact location. An emitter structure is formed at the emitter contact location. Forming the emitter structure includes etching the semiconductor device at the sinker contact location to form a sinker contact region. The sinker contact region has a first depth. The method may also include forming a gate structure. Forming the gate structure includes etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.
摘要翻译： 半导体器件的制造方法包括形成半导体衬底的掩埋层。 在掩埋层的至少一部分附近形成有源区。 在掩埋层的至少一部分附近形成第一隔离结构。 在活性区域的至少一部分附近形成第二隔离结构。 在活性区域的至少一部分附近形成基底层。 在基底层的至少一部分附近形成电介质层，然后在发射极接触位置和沉降片接触位置移除介电层的至少一部分。 发射极结构形成在发射极接触位置。 形成发射极结构包括在沉降片接触位置蚀刻半导体器件以形成沉降片接触区域。 沉降片接触区域具有第一深度。 该方法还可以包括形成栅极结构。 形成栅极结构包括蚀刻沉降片接触区域，从而将沉降片接触区域的第一深度增加到第二深度。
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公开(公告)号：US08757115B2
公开(公告)日：2014-06-24
申请号：US13461830
申请日：2012-05-02
申请人： Michael Schober
发明人： Michael Schober
IPC分类号： F01L1/34
CPC分类号： F01L1/352 , F01L2001/34459 , F01L2250/02 , F01L2800/12 , F01L2820/032 , F01L2820/035
摘要： An adjustment device for adjusting the relative angular position of a camshaft with respect to a crankshaft within a specified angle range, the adjustment device having a device for emergency operation of the adjustment device. The device for emergency operation includes a freewheel device which can be activated in an emergency mode of the adjustment device and, in an activated state, is able to allow an adjustment movement of the camshaft with respect to the crankshaft from the current position in a first direction towards an emergency running position and to block an adjustment movement in a second direction opposite thereto.
摘要翻译： 一种调节装置，用于调节凸轮轴相对于曲轴在相对角度范围内的相对角位置，该调节装置具有用于调节装置的紧急操作的装置。 用于紧急操作的装置包括可在调节装置的紧急模式下被启动的自由轮装置，并且在激活状态下，能够允许凸轮轴相对于曲轴从当前位置在第一 方向朝向紧急行驶位置，并阻止与其相反的第二方向的调节运动。
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8.发明申请System and method for passively estimating angle and range of a source using signal samples collected simultaneously from a multi-aperture antenna 有权使用从多孔径天线同时收集的信号样本来被动地估计源的角度和范围的系统和方法公开(公告)号：US20080024356A1
公开(公告)日：2008-01-31
申请号：US11871047
申请日：2007-10-11
申请人： Michael Schober
发明人： Michael Schober
摘要： A system and method for passively estimating range and angle of a source are disclosed. The source may be any wave source including radio-frequency (RF), optical, acoustic or seismic sources. In some RF embodiments, the system includes a single aperture antenna to simultaneously receive RF signals from the RF source through a plurality of sub-apertures, and a signal processor to perform a proximity test using samples simultaneously collected from the sub-apertures to determine whether or not to calculate angle and range estimates to the source based on either a curved wavefront assumption or a planar wavefront assumption.
摘要翻译： 公开了一种用于被动估计源的范围和角度的系统和方法。 源可以是包括射频（RF），光学，声学或地震源的任何波源。 在一些RF实施例中，系统包括单个孔径天线，以同时从RF源通过多个子孔径接收RF信号，以及信号处理器，以使用同时从子孔径收集的样本来执行接近测试，以确定是否 或者不是基于曲面波前假设或平面波前假设来计算源的角度和距离估计。
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公开(公告)号：US06659481B2
公开(公告)日：2003-12-09
申请号：US10012781
申请日：2001-11-05
IPC分类号： B60G1700
CPC分类号： B60G9/003 , B60G2200/30 , B60G2204/4306 , B60G2206/32 , B60G2206/8201
摘要： An attachment of a vehicle axle to an axle suspension of a vehicle, such as a utility vehicle, includes a first plate element arranged on the upper side of the vehicle axle, a second plate element arranged on the lower side of the vehicle axle, and at least one spring clip, which connects the vehicle axle to an axle spring suspension of the axle suspension via the plate elements. To simplify assembly and mounting of this attachment, at least one web which is attached on its upper side to the first plate element and on its lower side to the second plate element may be arranged on each side of the vehicle axle so that the vehicle axle is completely surrounded and enclosed by the webs and the plate elements.
摘要翻译： 将车辆轴连接到诸如多用途车辆的车辆的车轴悬架上，包括布置在车轴上侧的第一板元件，布置在车轴下侧的第二板元件，以及 至少一个弹簧夹，其通过所述板元件将所述车轴连接到所述轴悬架的车轴弹簧悬架。 为了简化该附件的组装和安装，可以在车轴的每一侧上布置至少一个连接到其上侧到第一板元件并且在其下侧附接到第二板元件的腹板，使得车轴 被网和板元件完全包围并包围。
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10.发明授权Layer structure including metallic cover layer and fiber-reinforced composite substrate, and a method of making the same 失效包括金属覆盖层和纤维增强复合基板的层结构及其制造方法公开(公告)号：US06521331B1
公开(公告)日：2003-02-18
申请号：US09517346
申请日：2000-03-02
IPC分类号： D04H500
CPC分类号： B32B5/26 , B29C70/885 , B32B15/14 , B32B15/18 , B32B27/04 , B32B2260/021 , B32B2260/046 , B32B2262/103 , B32B2311/22 , B32B2311/30 , B32B2605/18 , Y02T50/43 , Y10T428/249923 , Y10T428/249924 , Y10T428/266
摘要： A composite laminate or layer structure includes a substrate (2) and a cover layer (4) bonded thereon. The substrate is made up of at least one layer (3) of fiber-reinforced synthetic material. The cover layer includes at least one layer (5) of metal fibers and/or threads (6), and a metal sheet (7) forming the outer surface skin (8) of the layer structure. The metal sheet is bonded by soldering or sintering onto the metal fibers and/or threads (6), while the layer of metal fibers and/or threads in turn is bonded to the underlying fiber-reinforced synthetic material (3) by being mutually and integrally permeated by a synthetic resin matrix and bonding material. Also, the metal fibers and/or threads (6) may be intermeshed with the fibers of the synthetic material (3). To provide improved bonding at both opposite sides thereof, the layer (5) of metal fibers and/or threads (6) has a lower porosity on the side adjoining the metal sheet, and a higher porosity on the side adjoining the fiber-reinforced synthetic material (3) of the substrate.
摘要翻译： 复合层叠体或层结构体包括基材（2）和与其接合的覆盖层（4）。 衬底由纤维增强合成材料的至少一层（3）组成。 覆盖层包括金属纤维和/或丝线（6）的至少一层（5）和形成层结构的外表皮（8）的金属片（7）。 金属片通过焊接或烧结粘合到金属纤维和/或螺纹（6）上，而金属纤维和/或螺纹层依次通过相互和相互接合在下面的纤维增强合成材料（3）上，并且 由合成树脂基体和接合材料一体渗透。 此外，金属纤维和/或线（6）可以与合成材料（3）的纤维相互啮合。 为了在其相对两侧提供改进的粘合，金属纤维和/或螺纹（6）的层（5）在与金属片相邻的一侧具有较低的孔隙率，并且在与纤维增强合成物相邻的一侧上具有较高的孔隙率 材料（3）。
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