-
公开(公告)号：US20080217781A1
公开(公告)日：2008-09-11
申请号：US12105037
申请日：2008-04-17
IPC分类号： H01L23/498
CPC分类号： H01L21/28518 , H01L21/2855
摘要： The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.
-
2.发明授权Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure 有权使用非晶Ni合金硅化物结构消除富含金属的硅化物公开(公告)号：US07419907B2
公开(公告)日：2008-09-02
申请号：US11173038
申请日：2005-07-01
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/2855
摘要： The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.
摘要翻译： 本发明提供了一种用于生产薄镍（Ni）一硅化物或NiSi膜（具有约30nm以下的厚度）的方法，作为在退火过程中形成非晶Ni合金硅化物层的CMOS器件中的接触，其消除 （即完全旁路）形成富金属硅化物层。 通过消除富金属硅化物层的形成，与由富金属硅化物相形成的NiSi膜相比，形成的所得NiSi膜具有改善的表面粗糙度。 本发明的方法还形成Ni单硅化物膜，而不会在现有技术的NiSi膜中存在的含Si衬底内遇到掺杂剂类型浓度的任何依赖性。
-
3.发明申请Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure 有权使用非晶Ni合金硅化物结构消除富含金属的硅化物公开(公告)号：US20070004205A1
公开(公告)日：2007-01-04
申请号：US11173038
申请日：2005-07-01
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/2855
摘要： The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.
摘要翻译： 本发明提供了一种用于生产薄镍（Ni）一硅化物或NiSi膜（具有约30nm以下的厚度）的方法，作为在退火过程中形成非晶Ni合金硅化物层的CMOS器件中的接触，其消除 （即完全旁路）形成富金属硅化物层。 通过消除富金属硅化物层的形成，与由富金属硅化物相形成的NiSi膜相比，形成的所得NiSi膜具有改善的表面粗糙度。 本发明的方法还形成Ni单硅化物膜，而不会在现有技术的NiSi膜中存在的含Si衬底内遇到掺杂剂类型浓度的任何依赖性。
-
4.发明申请ELIMINATING METAL-RICH SILICIDES USING AN AMORPHOUS Ni ALLOY SILICIDE STRUCTURE 有权使用非晶态Ni合金硅氧烷结构消除金属硅氧烷公开(公告)号：US20080217780A1
公开(公告)日：2008-09-11
申请号：US12105034
申请日：2008-04-17
IPC分类号： H01L23/498
CPC分类号： H01L21/28518 , H01L21/2855
摘要： The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.
摘要翻译： 本发明提供了一种用于生产薄镍（Ni）一硅化物或NiSi膜（具有约30nm以下的厚度）的方法，作为在退火过程中形成非晶Ni合金硅化物层的CMOS器件中的接触，其消除 （即完全旁路）形成富金属硅化物层。 通过消除富金属硅化物层的形成，与由富金属硅化物相形成的NiSi膜相比，形成的所得NiSi膜具有改善的表面粗糙度。 本发明的方法还形成Ni单硅化物膜，而不会在现有技术的NiSi膜中存在的含Si衬底内遇到掺杂剂类型浓度的任何依赖性。
-
5.发明授权Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure 失效使用非晶Ni合金硅化物结构消除富含金属的硅化物公开(公告)号：US07786578B2
公开(公告)日：2010-08-31
申请号：US12105037
申请日：2008-04-17
CPC分类号： H01L21/28518 , H01L21/2855
摘要： The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.
摘要翻译： 本发明提供了一种用于生产薄镍（Ni）一硅化物或NiSi膜（具有约30nm以下的厚度）的方法，作为在退火过程中形成非晶Ni合金硅化物层的CMOS器件中的接触，其消除 （即完全旁路）形成富金属硅化物层。 通过消除富金属硅化物层的形成，与由富金属硅化物相形成的NiSi膜相比，形成的所得NiSi膜具有改善的表面粗糙度。 本发明的方法还形成Ni单硅化物膜，而不会在现有技术的NiSi膜中存在的含Si衬底内遇到掺杂剂类型浓度的任何依赖性。
-
公开(公告)号：US07732870B2
公开(公告)日：2010-06-08
申请号：US12105034
申请日：2008-04-17
IPC分类号： H01L29/78
CPC分类号： H01L21/28518 , H01L21/2855
摘要： The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.
-
7.发明授权Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby 有权自对准金属与Ge形成的基板和由此形成的结构形成接触公开(公告)号：US08154130B2
公开(公告)日：2012-04-10
申请号：US12107992
申请日：2008-04-23
申请人： Cyril Cabral, Jr. , Roy A. Carruthers , Christophe Detavernier , Simon Gaudet , Christian Lavoie , Huiling Shang
发明人： Cyril Cabral, Jr. , Roy A. Carruthers , Christophe Detavernier , Simon Gaudet , Christian Lavoie , Huiling Shang
IPC分类号： H01L29/40
CPC分类号： H01L21/28525 , H01L21/28052 , H01L21/28518 , H01L29/665
摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.
摘要翻译： 提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。
-
8.发明授权Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby 有权自对准金属与Ge形成的基板和由此形成的结构形成接触公开(公告)号：US07449782B2
公开(公告)日：2008-11-11
申请号：US10838378
申请日：2004-05-04
申请人： Cyril Cabral, Jr. , Roy A. Carruthers , Christophe Detavernier , Simon Gaudet , Christian Lavoie , Huiling Shang
发明人： Cyril Cabral, Jr. , Roy A. Carruthers , Christophe Detavernier , Simon Gaudet , Christian Lavoie , Huiling Shang
IPC分类号： H01L29/40
CPC分类号： H01L21/28525 , H01L21/28052 , H01L21/28518 , H01L29/665
摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.
摘要翻译： 提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。
-
9.发明申请SELF-ALIGNED METAL TO FORM CONTACTS TO Ge CONTAINING SUBSTRATES AND STRUCTURE FORMED THEREBY 失效自对准金属形成与包含基体的结构和形成的结构公开(公告)号：US20080227283A1
公开(公告)日：2008-09-18
申请号：US12108001
申请日：2008-04-23
申请人： Cyril Cabral , Roy A. Carruthers , Christophe Detavernier , Simon Gaudet , Christian Lavoie , Huiling Shang
发明人： Cyril Cabral , Roy A. Carruthers , Christophe Detavernier , Simon Gaudet , Christian Lavoie , Huiling Shang
IPC分类号： H01L21/28
CPC分类号： H01L21/28525 , H01L21/28052 , H01L21/28518 , H01L29/665
摘要： A method for forming gennano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.
摘要翻译： 提供了一种在与由纯金属形成的常规硅化物接触相比更耐蚀刻性的Ge含有层上方形成硅锗化物的方法。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。
-
10.发明授权Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby 失效自对准金属与Ge形成的基板和由此形成的结构形成接触公开(公告)号：US07682968B2
公开(公告)日：2010-03-23
申请号：US12108001
申请日：2008-04-23
申请人： Cyril Cabral, Jr. , Roy A. Carruthers , Christophe Detavernier , Simon Gaudet , Christian Lavoie , Huiling Shang
发明人： Cyril Cabral, Jr. , Roy A. Carruthers , Christophe Detavernier , Simon Gaudet , Christian Lavoie , Huiling Shang
IPC分类号： H01L21/44
CPC分类号： H01L21/28525 , H01L21/28052 , H01L21/28518 , H01L29/665
摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.
摘要翻译： 提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。
-
-
-
-
-
-
-
-
-
搜索结果
18 条记录 (耗时 0.021 秒)