公开(公告)号：US20070228570A1

公开(公告)日：2007-10-04

申请号：US11763135

申请日：2007-06-14

申请人： Christos Dimitrakopoulos ,  Stephen Gates ,  Vincent McGahay ,  Sanjay Mehta

发明人： Christos Dimitrakopoulos ,  Stephen Gates ,  Vincent McGahay ,  Sanjay Mehta

IPC分类号： H01L23/532

CPC分类号： H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to methods of improving the fabrication of interconnect structures of the single or dual damascene type, in which there is no problem of hard mask retention or of conductivity between the metal lines after fabrication. The methods of the present invention include at least steps of chemical mechanical polishing and UV exposure or chemical repair treatment which steps improve the reliability of the interconnect structure formed. The present invention also relates to an interconnect structure which include a porous ultra low k dielectric of the SiCOH type in which the surface layer thereof has been modified so as to form a gradient layer that has both a density gradient and a C content gradient.

摘要翻译： 本发明涉及改进单镶嵌型或双镶嵌型互连结构的制造方法，其中在制造之后金属线之间没有硬掩模保持或导电性问题。 本发明的方法包括化学机械抛光和紫外线曝光或化学修复处理的至少步骤，这些步骤提高了形成的互连结构的可靠性。 本发明还涉及一种互连结构，其包括SiCOH型的多孔超低k电介质，其中其表面层被修饰以形成具有密度梯度和C含量梯度的梯度层。

公开(公告)号：US20060189133A1

公开(公告)日：2006-08-24

申请号：US11063152

申请日：2005-02-22

申请人： Christos Dimitrakopoulos ,  Stephen Gates ,  Vincent McGahay ,  Sanjay Mehta

发明人： Christos Dimitrakopoulos ,  Stephen Gates ,  Vincent McGahay ,  Sanjay Mehta

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L23/48

CPC分类号： H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to methods of improving the fabrication of interconnect structures of the single or dual damascene type, in which there is no problem of hard mask retention or of conductivity between the metal lines after fabrication. The methods of the present invention include at least steps of chemical mechanical polishing and UV exposure or chemical repair treatment which steps improve the reliability of the interconnect structure formed. The present invention also relates to an interconnect structure which include a porous ultra low k dielectric of the SiCOH type in which the surface layer thereof has been modified so as to form a gradient layer that has both a density gradient and a C content gradient.

摘要翻译： 本发明涉及改进单镶嵌型或双镶嵌型互连结构的制造方法，其中在制造之后金属线之间没有硬掩模保持或导电性问题。 本发明的方法包括化学机械抛光和紫外线曝光或化学修复处理的至少步骤，这些步骤提高了形成的互连结构的可靠性。 本发明还涉及一种互连结构，其包括SiCOH型的多孔超低k电介质，其中其表面层被修饰以形成具有密度梯度和C含量梯度的梯度层。

公开(公告)号：US20080118717A1

公开(公告)日：2008-05-22

申请号：US12018640

申请日：2008-01-23

申请人： Son Nguyen ,  Michael Lane ,  Stephen Gates ,  Xiao Liu ,  Vincent McGahay ,  Sanjay Mehta ,  Thomas Shaw

发明人： Son Nguyen ,  Michael Lane ,  Stephen Gates ,  Xiao Liu ,  Vincent McGahay ,  Sanjay Mehta ,  Thomas Shaw

IPC分类号： B32B3/00

CPC分类号： H01L21/3148 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/24802 ,  H01L2924/00

摘要： The present invention provides a hardmask that is located on a surface of a low k dielectric material having at least one conductive feature embedded therein. The hardmask includes a lower region of a hermetic oxide material located adjacent to the low k dielectric material and an upper region comprising atoms of Si, C and H located above the hermetic oxide material. The present invention also provides a method of fabricating the inventive hardmask as well as a method to form an interconnect structure containing the same.

公开(公告)号：US20060091559A1

公开(公告)日：2006-05-04

申请号：US10981233

申请日：2004-11-04

申请人： Son Nguyen ,  Michael Lane ,  Stephen Gates ,  Xiao Liu ,  Vincent McGahay ,  Sanjay Mehta ,  Thomas Shaw

发明人： Son Nguyen ,  Michael Lane ,  Stephen Gates ,  Xiao Liu ,  Vincent McGahay ,  Sanjay Mehta ,  Thomas Shaw

IPC分类号： H01L21/4763 ,  H01L23/52 ,  H01L21/31

CPC分类号： H01L21/3148 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/24802 ,  H01L2924/00

摘要： The present invention provides a hardmask that is located on a surface of a low k dielectric material having at least one conductive feature embedded therein. The hardmask includes a lower region of a hermetic oxide material located adjacent to the low k dielectric material and an upper region comprising atoms of Si, C and H located above the hermetic oxide material. The present invention also provides a method of fabricating the inventive hardmask as well as a method to form an interconnect structure containing the same.

公开(公告)号：US20050156285A1

公开(公告)日：2005-07-21

申请号：US10758724

申请日：2004-01-16

申请人： Stephen Gates ,  Christos Dimitrakopoulos ,  Alfred Grill ,  Son Nguyen

发明人： Stephen Gates ,  Christos Dimitrakopoulos ,  Alfred Grill ,  Son Nguyen

IPC分类号： H01L21/768 ,  C23C16/00 ,  C23C16/40 ,  C23C16/56 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water vapor or integration processing are provided. The dielectric materials have a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa. Electronic structures including the dielectric materials of the present invention as well as various methods of fabricating the dielectric materials are also provided.

摘要翻译： 包含Si，C，O和H元素的介电材料具有机械性能（拉伸应力，弹性模量，硬度内聚强度，水中裂纹速度）的特定值，这导致稳定的超低k膜，其不被水蒸气降解 或集成处理。 电介质材料具有约2.8或更小的介电常数，小于45MPa的拉伸应力，约2至约15GPa的弹性模量和约0.2至约2GPa的硬度。 还提供了包括本发明的电介质材料的电子结构以及制造介电材料的各种方法。

公开(公告)号：US20080044668A1

公开(公告)日：2008-02-21

申请号：US11034479

申请日：2005-01-13

申请人： Christos Dimitrakopoulos ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Eric Liniger ,  Xiao Liu ,  Son Nguyen ,  Deborah Neumayer ,  Thomas Shaw

发明人： Christos Dimitrakopoulos ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Eric Liniger ,  Xiao Liu ,  Son Nguyen ,  Deborah Neumayer ,  Thomas Shaw

IPC分类号： B32B9/04 ,  B32B13/04

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

摘要： A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

摘要翻译： 描述了形成具有受控双轴应力的超低介电常数层的方法，其包括以下步骤：通过PECVD和旋涂方法之一形成包含Si，C，O和H的层，并在含有非常低的浓度的环境中固化该膜 的氧和水各自小于10ppm。 还通过使用介电常数不大于2.8的方法描述材料。 本发明克服了低双轴应力低于46MPa的薄膜形成问题。

公开(公告)号：US20060055004A1

公开(公告)日：2006-03-16

申请号：US11268106

申请日：2005-11-07

申请人： Stephen Gates ,  Christos Dimitrakopoulos ,  Alfred Grill ,  Son Nguyen

发明人： Stephen Gates ,  Christos Dimitrakopoulos ,  Alfred Grill ,  Son Nguyen

IPC分类号： H01L23/58

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water vapor or integration processing are provided. The dielectric materials have a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa. Electronic structures including the dielectric materials of the present invention as well as various methods of fabricating the dielectric materials are also provided.

摘要翻译： 包含Si，C，O和H元素的介电材料具有机械性能（拉伸应力，弹性模量，硬度内聚强度，水中裂纹速度）的特定值，这导致稳定的超低k膜，其不被水蒸气降解 或集成处理。 电介质材料具有约2.8或更小的介电常数，小于45MPa的拉伸应力，约2至约15GPa的弹性模量和约0.2至约2GPa的硬度。 还提供了包括本发明的电介质材料的电子结构以及制造介电材料的各种方法。

公开(公告)号：US20080038917A1

公开(公告)日：2008-02-14

申请号：US11873936

申请日：2007-10-17

申请人： Timothy Dalton ,  Nicholas Fuller ,  Stephen Gates

发明人： Timothy Dalton ,  Nicholas Fuller ,  Stephen Gates

IPC分类号： H01L21/4763

CPC分类号： H01L21/0331 ,  H01L21/76811 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/31667 ,  H01L2924/00

摘要： Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.

公开(公告)号：US20070173071A1

公开(公告)日：2007-07-26

申请号：US11336726

申请日：2006-01-20

申请人： Ali Afzali-Ardakani ,  Stephen Gates ,  Alfred Grill ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel

发明人： Ali Afzali-Ardakani ,  Stephen Gates ,  Alfred Grill ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel

IPC分类号： H01L21/469 ,  H01L23/58

CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided. The porous composite material is fabricating utilizing at least one bifunctional organic porogen as a precursor compound

摘要翻译： 可用于半导体器件制造的多孔复合材料，其中孔的直径（或特征尺寸）和孔径分布（PSD）以纳米级方式进行控制，并且其表现出改进的内聚强度（或等效地提高的断裂韧性或 降低脆性），并且提供了诸如应力腐蚀开裂，Cu进入和其它关键性能等性能的降低的耐水分性。 多孔复合材料是利用至少一种双功能有机致孔剂作为前体化合物制造的

公开(公告)号：US20060165891A1

公开(公告)日：2006-07-27

申请号：US11132108

申请日：2005-05-18

申请人： Daniel Edelstein ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

发明人： Daniel Edelstein ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

IPC分类号： C23C16/00 ,  B05D3/00

CPC分类号： H01L31/103 ,  Y10T428/31663

摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C≡CH2, C≡C or a [S]n linkage, where n is a defined above.

摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k介电材料，其包括Si，C，O和H的原子，其中C原子的一部分键合为Si-CH _{3个官能团，另外一部分C原子键合为Si-R-Si，其中R是苯基， - [CH 2 N] - 其中n大于或等于1，HC-CH，C≡CH2，C≡C或[S] n N连接，其中n是定义的 以上。}