公开(公告)号：US20090304951A1

公开(公告)日：2009-12-10

申请号：US12542287

申请日：2009-08-17

申请人： Christos Dimitrios Dimitrakopoulos ,  Stephen McConnell Gates ,  Alfred Grill ,  Michael Wayne Lane ,  Eric Gerhard Liniger ,  Xiao Hu Liu ,  Son Van Nguyen ,  Deborah Ann Neumayer ,  Thomas McCarroll Shaw

发明人： Christos Dimitrios Dimitrakopoulos ,  Stephen McConnell Gates ,  Alfred Grill ,  Michael Wayne Lane ,  Eric Gerhard Liniger ,  Xiao Hu Liu ,  Son Van Nguyen ,  Deborah Ann Neumayer ,  Thomas McCarroll Shaw

IPC分类号： C23C16/513 ,  G21G5/00

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

摘要： A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

摘要翻译： 描述了形成具有受控双轴应力的超低介电常数层的方法，其包括以下步骤：通过PECVD和旋涂方法之一形成包含Si，C，O和H的层，并在含有非常低的浓度的环境中固化该膜 的氧和水各自小于10ppm。 还通过使用介电常数不超过2.8的方法描述材料。 本发明克服了低双轴应力低于46MPa的薄膜形成问题。

公开(公告)号：US07357977B2

公开(公告)日：2008-04-15

申请号：US11034479

申请日：2005-01-13

申请人： Christos Dimitrios Dimitrakopoulos ,  Stephen McConnell Gates ,  Alfred Grill ,  Michael Wayne Lane ,  Eric Gerhard Liniger ,  Xiao Hu Liu ,  Son Van Nguyen ,  Deborah Ann Neumayer ,  Thomas McCarroll Shaw

发明人： Christos Dimitrios Dimitrakopoulos ,  Stephen McConnell Gates ,  Alfred Grill ,  Michael Wayne Lane ,  Eric Gerhard Liniger ,  Xiao Hu Liu ,  Son Van Nguyen ,  Deborah Ann Neumayer ,  Thomas McCarroll Shaw

IPC分类号： H01L23/52 ,  H01L23/58

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

摘要： A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

摘要翻译： 描述了形成具有受控双轴应力的超低介电常数层的方法，其包括以下步骤：通过PECVD和旋涂方法之一形成包含Si，C，O和H的层，并在含有非常低的浓度的环境中固化该膜 的氧和水各自小于10ppm。 还通过使用介电常数不大于2.8的方法描述材料。 本发明克服了低双轴应力低于46MPa的薄膜形成问题。

公开(公告)号：US20080286494A1

公开(公告)日：2008-11-20

申请号：US12044334

申请日：2008-03-07

申请人： Christos Dimitrios Dimitrakopoulos ,  Stephen McConnell Gates ,  Alfred Grill ,  Michael Wayne Lane ,  Eric Gerhard Liniger ,  Xiao Hu Liu ,  Son Van Nguyen ,  Deborah Ann Neumayer ,  Thomas McCarroll Shaw

发明人： Christos Dimitrios Dimitrakopoulos ,  Stephen McConnell Gates ,  Alfred Grill ,  Michael Wayne Lane ,  Eric Gerhard Liniger ,  Xiao Hu Liu ,  Son Van Nguyen ,  Deborah Ann Neumayer ,  Thomas McCarroll Shaw

IPC分类号： B01J19/08 ,  C23C16/44

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

摘要： A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

公开(公告)号：US06636290B1

公开(公告)日：2003-10-21

申请号：US09307887

申请日：1999-05-10

申请人： James Henry Glownia ,  Gareth Geoffrey Hougham ,  Eric Gerhard Liniger ,  Robert Jacob Von Gutfeld

发明人： James Henry Glownia ,  Gareth Geoffrey Hougham ,  Eric Gerhard Liniger ,  Robert Jacob Von Gutfeld

IPC分类号： G02F113

CPC分类号： G02F1/1339 ,  C09J5/04 ,  C09J2205/31 ,  G02F1/1341 ,  G02F2202/023

摘要： Liquid crystal display (LCD ) panels can be formed rapidly by this method, which involves depositing liquid crystal (LC) in a central region of one substrate, depositing a fillet of epoxy material in a continuous loop along the periphery of one substrate to surround the LC material, placing a second glass substrate over the first substrate and in continuous contact with the epoxy fillet, and then causing the fillet to set by curing or cross-linking. Advantageously, the epoxy fillet can be hardened by scanning it with an infrared or ultraviolet laser focussed to avoid heating the LC material. Alternatively, the epoxy fillet can be formed from two-component epoxy by depositing one fillet of each component on the peripheral region of one of the substrates, joining the substrates to merge the two components, and then vibrating the joined substrates to enhance commingling and setting of the two components into a strong hermetic seal.

摘要翻译： 可以通过这种方法快速形成液晶显示（LCD）面板，其包括在一个基板的中心区域沉积液晶（LC），沿着一个基板的周边在连续的环路中沉积环氧树脂的圆角以包围 LC材料，将第二玻璃基板放置在第一基板上并与环氧圆角连续接触，然后通过固化或交联来使圆角固定。 有利的是，可以用聚焦的红外线或紫外线激光器对环氧胶片进行硬化，以避免加热LC材料。 或者，可以通过在一个基板的周边区域上沉积每个部件的一个圆角来形成环氧圆角，从而将两个部件合并，从而使接合的基板振动以增强混合和设定 的两个部件成为一个强大的气密密封。

公开(公告)号：US06455443B1

公开(公告)日：2002-09-24

申请号：US09789422

申请日：2001-02-21

申请人： Andrew Robert Eckert ,  John C. Hay ,  Jeffrey Curtis Hedrick ,  Kang-Wook Lee ,  Eric Gerhard Liniger ,  Eva Erika Simonyi

发明人： Andrew Robert Eckert ,  John C. Hay ,  Jeffrey Curtis Hedrick ,  Kang-Wook Lee ,  Eric Gerhard Liniger ,  Eva Erika Simonyi

IPC分类号： H01L2131

CPC分类号： H01L21/02282 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/76829

摘要： A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si—O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si—O bonds.

公开(公告)号：US6022791A

公开(公告)日：2000-02-08

申请号：US950691

申请日：1997-10-15

申请人： Robert Francis Cook ,  Eric Gerhard Liniger ,  Ronald Lee Mendelson ,  Richard Charles Whiteside

发明人： Robert Francis Cook ,  Eric Gerhard Liniger ,  Ronald Lee Mendelson ,  Richard Charles Whiteside

IPC分类号： H01L21/301 ,  H01L21/768 ,  H01L23/58 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L23/585 ,  H01L21/768 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/05556 ,  Y10S438/928

摘要： A serpentine pattern has been found to be effective at interrupting propagation of delamination cracks in thin film layers. The ring is provided on a semiconductor chip to suppress crack propagation from the chip edge. The ring is effective even though it is filled with metal, the serpentine pattern providing significantly increased area as compared with a standard linear crack stop that the energy for crack propagation is dissipated. In addition to serpentines, pattern features such as staggered filled ring patterns and connected rings will also be effective at reducing the propagation of delamination cracks from edge to active area by virtue of the increased area of interaction between the crack and the crack stop.

摘要翻译： 已经发现蛇形图案在中断薄膜层中分层裂纹的传播方面是有效的。 环设置在半导体芯片上以抑制从芯片边缘的裂纹扩展。 即使填充有金属，该环也是有效的，与用于裂纹扩展的能量消散的标准线性裂纹停止相比，蛇形图案提供了显着增加的面积。 除了蛇纹石之外，由于裂纹和裂纹停止之间的相互作用面积增加，图案特征如交错填充环形图案和连接环也将有效地减少分层裂纹从边缘到有源区域的传播。

公开(公告)号：US5888838A

公开(公告)日：1999-03-30

申请号：US90563

申请日：1998-06-04

申请人： Ronald Lee Mendelson ,  Robert Francis Cook ,  David Frederick Diefenderfer ,  Eric Gerhard Liniger ,  John M. Blondin ,  Donald W. Brouillette

发明人： Ronald Lee Mendelson ,  Robert Francis Cook ,  David Frederick Diefenderfer ,  Eric Gerhard Liniger ,  John M. Blondin ,  Donald W. Brouillette

IPC分类号： H01L21/304 ,  H01L21/306 ,  H01L21/50 ,  H01L23/544 ,  G01N31/26

CPC分类号： H01L21/304 ,  H01L21/50 ,  H01L23/544 ,  H01L2223/54473 ,  H01L2924/0002 ,  Y10S148/162 ,  Y10S438/928 ,  Y10S438/973

摘要： A method is described by which the mechanical strength of chips of semiconductor devices can be controlled by appropriate wafer finishing and sorted by knowledge of the finishing method and chip and wafer geometry. The control and sorting derive from a knowledge of the geometry of the striations remaining on the back of chips after the wafer-grinding finishing step.

摘要翻译： 描述了一种方法，通过该方法可以通过适当的晶片整理来控制半导体器件的芯片的机械强度，并根据整理方法和芯片和晶片几何的知识进行分类。 控制和排序来自于在晶片磨削精加工步骤之后的剩余在芯片背面上的条纹的几何形状的知识。

公开(公告)号：US06171873B2

公开(公告)日：2001-01-09

申请号：US09221825

申请日：1998-12-28

申请人： Ronald Lee Mendelson ,  Robert Francis Cook ,  David Frederick Diefenderfer ,  Eric Gerhard Liniger ,  John M. Blondin ,  Donald W. Brouillette

发明人： Ronald Lee Mendelson ,  Robert Francis Cook ,  David Frederick Diefenderfer ,  Eric Gerhard Liniger ,  John M. Blondin ,  Donald W. Brouillette

IPC分类号： G01R3126

CPC分类号： H01L21/304 ,  H01L21/50 ,  H01L23/544 ,  H01L2223/54473 ,  H01L2924/0002 ,  Y10S148/162 ,  Y10S438/928 ,  Y10S438/973 ,  H01L2924/00

摘要： A method is described by which the mechanical strength of chips of semiconductor devices can be controlled by appropriate wafer finishing and sorted by knowledge of the finishing method and chip and wafer geometry. The control and sorting derive from a knowledge of the geometry of the striations remaining on the back of chips after the wafer-grinding finishing step.

摘要翻译： 描述了一种方法，通过该方法可以通过适当的晶片整理来控制半导体器件的芯片的机械强度，并根据整理方法和芯片和晶片几何的知识进行分类。 控制和排序来自于在晶片磨削精加工步骤之后的剩余在芯片背面上的条纹的几何形状的知识。

公开(公告)号：US5953627A

公开(公告)日：1999-09-14

申请号：US965541

申请日：1997-11-06

申请人： Kenneth Raymond Carter ,  Robert Francis Cook ,  Martha Alyne Harbison ,  Craig Jon Hawker ,  James Lupton Hedrick ,  Sung-Mog Kim ,  Eric Gerhard Liniger ,  Robert Dennis Miller ,  Willi Volksen ,  Do Yeung Yoon

发明人： Kenneth Raymond Carter ,  Robert Francis Cook ,  Martha Alyne Harbison ,  Craig Jon Hawker ,  James Lupton Hedrick ,  Sung-Mog Kim ,  Eric Gerhard Liniger ,  Robert Dennis Miller ,  Willi Volksen ,  Do Yeung Yoon

IPC分类号： H01L21/312 ,  H01L21/768 ,  H01L21/28

CPC分类号： H01L21/02137 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801

摘要： The invention relates to a process for making an integrated circuit device comprising (I) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the condensation product of silsesquioxane precursor in the presence of an organic amine having a boiling point greater than 150.degree. C.

摘要翻译： 本发明涉及一种用于制造集成电路器件的方法，包括（I）衬底，（ii）位于衬底上的金属电路线，以及（iii）位于电路线上的电介质材料。 电介质材料包括在沸点大于150℃的有机胺存在下倍半硅氧烷前体的缩合产物。

公开(公告)号：US07247946B2

公开(公告)日：2007-07-24

申请号：US11037970

申请日：2005-01-18

申请人： John Bruley ,  Roy A. Carruthers ,  Lynne Marie Gignac ,  Chao-Kun Hu ,  Eric Gerhard Liniger ,  Sandra Guy Malhotra ,  Stephen M. Rossnagel

发明人： John Bruley ,  Roy A. Carruthers ,  Lynne Marie Gignac ,  Chao-Kun Hu ,  Eric Gerhard Liniger ,  Sandra Guy Malhotra ,  Stephen M. Rossnagel

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76849 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： Disclosed is a procedure to coat the free surface of Cu damascene lines by a 1-5 nm thick element prior to deposition of the inter-level dielectric or dielectric diffusion barrier layer. The coating provides protection against oxidation, increases the adhesion strength between the Cu and dielectric, and reduces interface diffusion of Cu. In addition, the thin cap layer further increases electromigration Cu lifetime and reduces the stress induced voiding. The selective elements can be directly deposited onto the Cu embedded within the under layer dielectric without causing an electric short circuit between the Cu lines. These chosen elements are based on their high negative reduction potentials with oxygen and water, and a low solubility in and formation of compounds with Cu.

摘要翻译： 公开了在沉积层间电介质或电介质扩散阻挡层之前，通过1-5nm厚的元件涂覆Cu镶嵌线的自由表面的步骤。 涂层提供防氧化保护，增加Cu和介电层之间的粘合强度，并减少Cu的界面扩散。 此外，薄盖层进一步增加电迁移Cu寿命，并减少应力引起的空隙。 选择元件可以直接沉积在嵌入在下层电介质中的Cu上，而不会在Cu线之间引起电短路。 这些选择的元素是基于它们具有氧和水的高的负还原电位，以及与Cu的化合物的低溶解度和形成。