公开(公告)号：US5700699A

公开(公告)日：1997-12-23

申请号：US405501

申请日：1995-03-16

申请人： Chul-Hi Han ,  Choong-Ki Kim ,  Jung-Yeal Lee ,  Kil-Hwan Oh

发明人： Chul-Hi Han ,  Choong-Ki Kim ,  Jung-Yeal Lee ,  Kil-Hwan Oh

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/28158 ,  H01L29/4908

摘要： A method for fabricating the polycrystal silicon TFT under a low temperature which has an improved electron mobility, comprises the steps of forming an oxide film on a substrate, depositing a polycrystal silicon on the oxide film and patterning the polycrystal silicon so that source and drain regions and a channel region remain, growing a gate insulating layer on the patterned polycrystal silicon by ECR plasma thermal oxidation, depositing a material for a gate on the whole surface and removing the material and the gate insulating layer in portions except for a gate region to form the gate, and performing ion implantation on the exposed areas of the polycrystal silicon to form the source and drain regions.

摘要翻译： 在低温下制造具有改善的电子迁移率的多晶硅TFT的方法包括以下步骤：在衬底上形成氧化膜，在氧化物膜上沉积多晶硅并使多晶硅图形化，使得源极和漏极区域 并且保持沟道区域，通过ECR等离子体热氧化在图案化多晶硅上生长栅极绝缘层，在整个表面上沉积用于栅极的材料，并除去栅极区域以外的部分去除材料和栅极绝缘层以形成 并且在多晶硅的暴露区域上进行离子注入以形成源区和漏区。