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    LIGHT EMITTING DIODE WITH IMPROVED STRUCTURE
    3.
    发明申请
    LIGHT EMITTING DIODE WITH IMPROVED STRUCTURE 有权
    具有改进结构的发光二极管

    公开(公告)号：US20090065762A1

    公开(公告)日：2009-03-12

    申请号：US12178758

    申请日：2008-07-24

    申请人： Chung Hoon LEE ,  Ki Bum NAM ,  Dae Sung KAL

    发明人： Chung Hoon LEE ,  Ki Bum NAM ,  Dae Sung KAL

    IPC分类号： H01L29/06

    CPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/16

    摘要： A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.

    摘要翻译： 用于最小化有源区中的晶体缺陷并提高有源区中的电子和空穴的复合效率的发光二极管（LED）包括在非极性衬底上生长的非极性GaN基半导体层。 半导体层包括非极性N型半导体层，非极性P型半导体层和位于N型半导体层和P型半导体层之间的非极性有源区。 非极性有源区层包括阱层和具有超晶格结构的势垒层。

    LIGHT EMITTING DIODE WITH IMPROVED STRUCTURE
    5.
    发明申请
    LIGHT EMITTING DIODE WITH IMPROVED STRUCTURE 有权
    具有改进结构的发光二极管

    公开(公告)号：US20120153259A1

    公开(公告)日：2012-06-21

    申请号：US13406313

    申请日：2012-02-27

    申请人： Chung Hoon LEE ,  Ki Bum NAM ,  Dae Sung KAL

    发明人： Chung Hoon LEE ,  Ki Bum NAM ,  Dae Sung KAL

    IPC分类号： H01L33/06

    CPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/16

    摘要： A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.

    摘要翻译： 用于最小化有源区中的晶体缺陷并提高有源区中的电子和空穴的复合效率的发光二极管（LED）包括在非极性衬底上生长的非极性GaN基半导体层。 半导体层包括非极性N型半导体层，非极性P型半导体层和位于N型半导体层和P型半导体层之间的非极性有源区。 非极性有源区层包括阱层和具有超晶格结构的势垒层。

    AC LIGHT EMITTING DEVICE WITH LONG-PERSISTENT PHOSPHOR AND LIGHT EMITTING DEVICE MODULE HAVING THE SAME
    6.
    发明申请
    AC LIGHT EMITTING DEVICE WITH LONG-PERSISTENT PHOSPHOR AND LIGHT EMITTING DEVICE MODULE HAVING THE SAME 有权
    具有长时间荧光的交流发光装置和具有其的发光装置模块

    公开(公告)号：US20100096977A1

    公开(公告)日：2010-04-22

    申请号：US12581507

    申请日：2009-10-19

    申请人： Chung Hoon LEE ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

    发明人： Chung Hoon LEE ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

    IPC分类号： H01J1/62

    CPC分类号： H01L33/504 ,  F21K9/00 ,  F21K9/62 ,  F21K9/64 ,  F21V23/06 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/48137 ,  H01L2224/49107 ,  H05B33/0821

    摘要： Disclosed are an AC light emitting device with a long-persistent phosphor and an AC light emitting device module having the same. According to an exemplary embodiment of the present invention, the light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. Further, a first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip; and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence resulted from the second long-persistent phosphor is allowed to be different from that resulted from the first long-persistent phosphor, whereby a flicker effect of the AC light emitting device can be more alleviated.

    摘要翻译： 公开了具有长持久性荧光体和具有该荧光体的AC发光器件模块的交流发光器件。 根据本发明的示例性实施例，发光器件包括第一发光二极管芯片和第二发光二极管芯片，每个芯片在单个基板上具有多个发光单元。 此外，第一长持续荧光体位于第一发光二极管芯片上，以对从第一发光二极管芯片发射的光的一部分进行波长转换; 并且第二长持续荧光体位于第二发光二极管芯片上，以对从第二发光二极管芯片发射的光的一部分进行波长转换。 使得由第二长持续荧光体产生的余辉发光与第一长持续荧光体不同，从而可以进一步减轻AC发光器件的闪烁效应。

    AC LIGHT EMITTING DIODE
    7.
    发明申请
    AC LIGHT EMITTING DIODE 有权
    交流发光二极管

    公开(公告)号：US20090085048A1

    公开(公告)日：2009-04-02

    申请号：US12178764

    申请日：2008-07-24

    申请人： Chung Hoon LEE ,  Ki Bum NAM ,  Dae Won KIM

    发明人： Chung Hoon LEE ,  Ki Bum NAM ,  Dae Won KIM

    IPC分类号： H01L33/00

    CPC分类号： H01L27/156 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/16 ,  H01L33/32 ,  H01L33/62 ,  H01L2224/48137

    摘要： Disclosed is a light emitting diode (LED) operated by being directly connected to an AC power source. An AC LED according to the present invention comprises a plurality of light emitting cells two-dimensionally arranged on a single substrate; and wires electrically connecting the light emitting cells; wherein the light emitting cells are connected in series by the wires to form a serial array, the single substrate is a non-polar substrate, and the light emitting cells have non-polar GaN-based semiconductor layers grown on the non-polar substrate.

    摘要翻译： 公开了通过直接连接到AC电源来操作的发光二极管（LED）。 根据本发明的交流发光二极管包括二维排列在单个基板上的多个发光单元; 以及电连接所述发光单元的电线; 其中所述发光单元通过所述导线串联连接以形成串联阵列，所述单个衬底是非极性衬底，并且所述发光单元具有在非极性衬底上生长的非极性GaN基半导体层。