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    LIGHT EMITTING DEVICE HAVING A PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    LIGHT EMITTING DEVICE HAVING A PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME 有权
    具有多个发光单元的发光装置及其制造方法

    公开(公告)号：US20090189166A1

    公开(公告)日：2009-07-30

    申请号：US12410101

    申请日：2009-03-24

    申请人： Chung Hoon LEE ,  Hong San Kim ,  James S. Speck

    发明人： Chung Hoon LEE ,  Hong San Kim ,  James S. Speck

    IPC分类号： H01L33/00

    CPC分类号： H01L27/153 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/48095 ,  H01L2224/73265 ,  H01L2924/01012 ,  H01L2924/01079

    摘要： Disclosed is a light emitting device having a plurality of light emitting cells. The light emitting device comprises a thermally conductive substrate, such as a SiC substrate, having a thermal conductivity higher than that of a sapphire substrate. The plurality of light emitting cells are connected in series on the thermally conductive substrate. Meanwhile, a semi-insulating buffer layer is interposed between the thermally conductive substrate and the light emitting cells. For example, the semi-insulating buffer layer may be formed of AlN or semi-insulating GaN. Since the thermally conductive substrate having a thermal conductivity higher than that of a sapphire substrate is employed, heat-dissipating performance can be enhanced as compared with a conventional sapphire substrate, thereby increasing the maximum light output of a light emitting device that is driven under a high voltage AC power source. In addition, since the semi-insulating buffer layer is employed, it is possible to prevent an increase in a leakage current through the thermally conductive substrate and between the light emitting cells.

    摘要翻译： 公开了具有多个发光单元的发光器件。 发光器件包括具有高于蓝宝石衬底的热导率的导热衬底，例如SiC衬底。 多个发光单元串联连接在导热基板上。 同时，在导热基板和发光单元之间插入半绝缘缓冲层。 例如，半绝缘缓冲层可以由AlN或半绝缘GaN形成。 由于采用具有高于蓝宝石基板的导热性的导热性基板，所以与以往的蓝宝石基板相比，能够提高散热性能，从而能够增大驱动下的发光元件的最大光输出 高压交流电源。 此外，由于采用了半绝缘缓冲层，因此可以防止通过导热基板和发光单元之间的漏电流的增加。

    (Al, Ga, In)N-BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME
    8.
    发明申请
    (Al, Ga, In)N-BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME 有权
    （Al，Ga，In）N基化合物半导体及其制造方法

    公开(公告)号：US20080265374A1

    公开(公告)日：2008-10-30

    申请号：US12132760

    申请日：2008-06-04

    申请人： Chung Hoon LEE

    发明人： Chung Hoon LEE

    IPC分类号： H01L29/20 ,  H01L21/205

    CPC分类号： H01L33/40 ,  H01L33/0095 ,  H01L33/32

    摘要： Disclosed are a (Al, Ga, In)N-based compound semiconductor device and a method of fabricating the same. The (Al, Ga, In)N-based compound semiconductor device of the present invention comprises a substrate; a (Al, Ga, In)N-based compound semiconductor layer grown on the substrate; and an electrode formed of at least one material or an alloy thereof selected from the group consisting of Pt, Pd and Au on the (Al, Ga, In)N-based compound semiconductor layer. Further, the method of fabricating the (Al, Ga, In)N-based compound semiconductor device comprises the steps of growing a P layer including P type impurities in a growth chamber; discharging hydrogen and a hydrogen source gas in the growth chamber; lowering the temperature of the (Al, Ga, In)N-based compound semiconductor with the P layer formed thereon to such an extent that it can be withdrawn to the outside from the growth chamber; withdrawing the (Al, Ga, In)N-based compound semiconductor from the growth chamber; and forming an electrode of at least one material or an alloy thereof selected from the group consisting of Pt, Pd and Au on the p layer. According to the present invention, it is possible to sufficiently secure P type conductivity and obtain good ohmic contact characteristics without performing an annealing process. And, no further annealing is necessary when Pt, Pd, Au electrode are used.

    摘要翻译： 公开了一种（Al，Ga，In）N基化合物半导体器件及其制造方法。 本发明的（Al，Ga，In）N基化合物半导体器件包括：衬底; 在衬底上生长的（Al，Ga，In）N基化合物半导体层; 以及在（Al，Ga，In）N基化合物半导体层上由选自Pt，Pd和Au的至少一种材料或其合金形成的电极。 此外，制造（Al，Ga，In）N基化合物半导体器件的方法包括在生长室中生长包含P型杂质的P层的步骤; 在生长室中排出氢和氢源气体; 降低其上形成有P层的（Al，Ga，In）N基化合物半导体的温度至可从生长室抽出到外部的程度; 从生长室中取出（Al，Ga，In）N基化合物半导体; 以及在p层上形成选自Pt，Pd和Au中的至少一种材料或其合金的电极。 根据本发明，可以在不进行退火处理的情况下充分确保P型导电性并获得良好的欧姆接触特性。 并且，当使用Pt，Pd，Au电极时，不需要进一步的退火。