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    Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth
    1.
    发明申请
    Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth 有权
    水平发射，垂直发射，束形，分布反馈（DFB）激光器，通过在具有多个过度生长的图案化衬底上生长制成

    公开(公告)号：US20070125995A1

    公开(公告)日：2007-06-07

    申请号：US11633148

    申请日：2006-12-04

    申请人： Claude Weisbuch ,  Shuji Nakamura

    发明人： Claude Weisbuch ,  Shuji Nakamura

    IPC分类号： H01L29/06 ,  H01L27/15

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  G02B6/1225 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/105 ,  H01S5/12 ,  H01S5/1206 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/1231 ,  H01S5/18 ,  H01S5/187 ,  H01S5/20 ,  H01S5/2004 ,  H01S2304/12

    摘要： A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more first patterned layers deposited on top of the buffer layer, wherein each of the first patterned layers is comprised of a bottom lateral epitaxial overgrowth (LEO) mask layer and a LEO nitride layer filling holes in the bottom LEO mask layer, one or more active layers formed on the first patterned layers, and one or more second patterned layers deposited on top of the active layer, wherein each of the second patterned layers is comprised of a top LEO mask layer and a LEO nitride layer filling holes in the top LEO mask layer, wherein the top and/or bottom LEO mask layers act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element or beam directing element for the active layers.

    摘要翻译： 使用集成光学元件的结构包括衬底，在衬底上生长的缓冲层，沉积在缓冲层顶部上的一个或多个第一图案化层，其中每个第一图案化层由底部侧向外延生长（ LEO）掩模层和LEO氮化物层填充底部LEO掩模层中的孔，形成在第一图案化层上的一个或多个有源层和沉积在有源层顶部上的一个或多个第二图案化层，其中第二个 图案化层由顶部LEO掩模层和顶部LEO掩模层中的LEO氮化物层填充孔组成，其中顶部和/或底部LEO掩模层用作反射镜，光限制层，光栅，波长选择元件，光束 用于有源层的成形元件或光束引导元件。

    White, single or multi-color light emitting diodes by recycling guided modes
    2.
    发明申请
    White, single or multi-color light emitting diodes by recycling guided modes 失效
    白色，单色或多色发光二极管通过回收引导模式

    公开(公告)号：US20060054905A1

    公开(公告)日：2006-03-16

    申请号：US10938704

    申请日：2004-09-10

    申请人： Carole Schwach ,  Claude Weisbuch ,  Steven DenBaars ,  Henri Benisty ,  Shuji Nakamura

    发明人： Carole Schwach ,  Claude Weisbuch ,  Steven DenBaars ,  Henri Benisty ,  Shuji Nakamura

    IPC分类号： H01L21/00 ,  H01L33/00

    CPC分类号： H01L33/08 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/405 ,  H01L33/505

    摘要： A white, single or multi-color light emitting diode (LED) includes a mirror for reflecting photons within the LED; a first active region, adjacent the mirror, including one or more current-injected layers for emitting photons when electrically biased in a forward direction; a second active region, adjacent the first active region, including one or more optically-pumped layers for emitting photons, wherein the optically-pumped layers are optically excited by the photons emitted by the current-injected layers, thereby recycling guided modes; and an output interface, adjacent the second active region, for allowing the photons emitted by the optically-pumped layers to escape the LED as emitted light.

    摘要翻译： 白色，单色或多色发光二极管（LED）包括用于反射LED内的光子的反射镜; 邻近反射镜的第一有源区，包括一个或多个电流注入层，用于在向前方向上电偏置时发射光子; 邻近第一有源区的第二有源区，包括用于发射光子的一个或多个光学泵浦层，其中光泵浦层被电流注入层发射的光子激发，从而循环引导模式; 以及与第二有源区相邻的输出接口，用于允许由光泵浦层发射的光子作为发射光而逸出LED。

    Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N
    8.
    发明授权
    Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N 有权
    通过硅掺杂在非c面（Al，Ga，In）N上抑制倾斜缺陷形成和临界厚度增加

    公开(公告)号：US08772758B2

    公开(公告)日：2014-07-08

    申请号：US13470598

    申请日：2012-05-14

    申请人： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    发明人： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： H01L29/06

    CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513

    摘要： A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.

    摘要翻译： 一种用于制造III族氮化物的半导体器件的方法，包括（a）在半极性或非极性GaN衬底上或之上生长一个或多个缓冲层，其中缓冲层是半极性或非极性III- 氮化物缓冲层; 并且（b）掺杂缓冲层，使得形成在掺杂缓冲层上或上方的III族氮化物器件层中的多个晶体缺陷不高于形成在一个或多个第一或第二晶体管上形成的III族氮化物器件层中的多个晶体缺陷 更多未掺杂的缓冲层。 掺杂可以减少或防止错配位错线的形成和额外的穿线位错。 缓冲层的厚度和/或组成可以使得缓冲层的厚度接近或大于其缓解的临界厚度。 此外，可以在缓冲层上或上方形成一个或多个（AlInGaN）或III族氮化物器件层。