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公开(公告)号：US08157617B2
公开(公告)日：2012-04-17
申请号：US12542920
申请日：2009-08-18
IPC分类号： B24B1/00
CPC分类号： B24B37/042 , H01L21/02024
摘要： Semiconductor wafers are CMP polished by polishing the rear side of the semiconductor wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is higher at the center than at the edge of the rear side; and polishing the front side of the wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is lower in the center of the front side than in an edge region of the front side.
摘要翻译： 半导体晶片通过CMP抛光半导体晶片的后侧，通过沿着晶片直径的轮廓去除材料进行抛光，其中材料去除在中心处比后侧的边缘更高; 并且通过CMP沿着沿着晶片直径的轮廓的材料除去材料抛光晶片的前侧，其中在前侧的中心处的材料去除比在前侧的边缘区域更低。
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公开(公告)号：USRE44986E1
公开(公告)日：2014-07-01
申请号：US13553133
申请日：2012-07-19
IPC分类号： B24B1/00
CPC分类号： B24B37/042 , H01L21/02024
摘要： Semiconductor wafers are CMP polished by polishing the rear side of the semiconductor wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is higher at the center than at the edge of the rear side; and polishing the front side of the wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is lower in the center of the front side than in an edge region of the front side.
摘要翻译： 半导体晶片通过CMP抛光半导体晶片的后侧，通过沿着晶片直径的轮廓去除材料进行抛光，其中材料去除在中心处比后侧的边缘更高; 并且通过CMP沿着沿着晶片直径的轮廓的材料除去材料抛光晶片的前侧，其中在前侧的中心处的材料去除比在前侧的边缘区域更低。
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公开(公告)号：US20100056027A1
公开(公告)日：2010-03-04
申请号：US12542920
申请日：2009-08-18
CPC分类号： B24B37/042 , H01L21/02024
摘要： Semiconductor wafers are CMP polished by polishing the rear side of the semiconductor wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is higher at the center than at the edge of the rear side; and polishing the front side of the wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is lower in the center of the front side than in an edge region of the front side.
摘要翻译： 半导体晶片通过CMP抛光半导体晶片的后侧，通过沿着晶片直径的轮廓去除材料进行抛光，其中材料去除在中心处比后侧的边缘更高; 并且通过CMP沿着沿着晶片直径的轮廓的材料除去材料抛光晶片的前侧，其中在前侧的中心处的材料去除比在前侧的边缘区域更低。
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公开(公告)号：US20090130960A1
公开(公告)日：2009-05-21
申请号：US12262202
申请日：2008-10-31
申请人： Klaus Roettger , Werner Aigner , Makoto Tabata
发明人： Klaus Roettger , Werner Aigner , Makoto Tabata
CPC分类号： H01L21/02024 , B24B9/065 , B24B37/042 , H01L21/02021
摘要： The invention relates to a method for producing a semiconductor wafer with a polished edge, said method comprising the following steps: a polishing of at least one side of the semiconductor wafer, and a polishing of the edge of the polished semiconductor wafer, wherein the edge is polished in the presence of a polishing agent by means of a polishing cloth containing fixed abrasive.
摘要翻译： 本发明涉及一种用于制造具有抛光边缘的半导体晶片的方法，所述方法包括以下步骤：抛光半导体晶片的至少一侧以及研磨半导体晶片的边缘，其中边缘 在抛光剂存在下通过含有固定磨料的抛光布抛光。
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公开(公告)号：US20100055908A1
公开(公告)日：2010-03-04
申请号：US12547749
申请日：2009-08-26
IPC分类号： H01L21/306
CPC分类号： B24B37/042 , H01L21/02024
摘要： A method for producing a semiconductor wafer. The method includes placing the semiconductor wafer in a cutout in a carrier. Both sides of the semiconductor wafer are polished between an upper and a lower polishing plate with a polishing agent until the thickness of the center of the semiconductor wafer is less than the thickness of the carrier and from 10 μm to 30 μm of semiconductor wafer material is removed. The polishing agent contains 0.1 to 0.4% by weight of SiO2 and 0.1 to 0.9% by weight of an alkaline component.
摘要翻译： 一种半导体晶片的制造方法。 该方法包括将半导体晶片放置在载体中的切口中。 半导体晶片的两面用抛光剂在上下抛光板之间进行抛光，直到半导体晶片的中心厚度小于载体的厚度为止，半导体晶片材料的10μm至30μm为 删除。 抛光剂含有0.1至0.4重量％的SiO 2和0.1至0.9重量％的碱性组分。
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6.发明申请Carrier For Holding Semiconductor Wafers During A Double-Side Polishing Of The Semiconductor Wafers 审中-公开用于在半导体晶片的双面抛光期间保持半导体晶片的载体公开(公告)号：US20100210188A1
公开(公告)日：2010-08-19
申请号：US12692685
申请日：2010-01-25
申请人： Klaus Roettger , Gerhard Heier
发明人： Klaus Roettger , Gerhard Heier
CPC分类号： B24B41/067 , B24B37/08
摘要： The invention relates to a carrier for holding semiconductor wafers during a double-side polishing of the semiconductor wafers, comprising cutouts for receiving the semiconductor wafers and passage openings for a polishing agent supplied during the polishing. Some of the passage openings are formed by holes which have a diameter of 2 to 8 mm and are arranged at a distance of 1 to 10 mm around the cutouts, wherein the holes are arranged on two central sections and an inner or an outer section of a circular path.
摘要翻译： 本发明涉及一种用于在半导体晶片的双面抛光期间保持半导体晶片的载体，包括用于接收半导体晶片的切口和用于在抛光期间供应的抛光剂的通道开口。 一些通道开口由直径为2至8mm的孔形成，并且围绕切口布置在1至10mm的距离处，其中孔布置在两个中心部分上，内部或外部部分 圆形路径。
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7.发明申请Method For Polishing A Semiconductor Wafer And Polished Semiconductor Wafer Producible According To The Method 审中-公开根据该方法可抛光半导体晶片和抛光半导体晶片的方法公开(公告)号：US20080070483A1
公开(公告)日：2008-03-20
申请号：US11853103
申请日：2007-09-11
申请人： Klaus Roettger , Vladimir Dutschke , Leszek Mistur
发明人： Klaus Roettger , Vladimir Dutschke , Leszek Mistur
IPC分类号： B24B7/26
CPC分类号： B24B37/08 , H01L21/02024
摘要： Semiconductor wafers are polished between upper and lower polishing plates, the semiconductor wafer being polished on both sides while in a recess of a carrier by supplying a polishing agent. The wafer is double-side polished in a first polishing step, which is concluded with a negative overhang, defined as the difference between the thickness of the wafer and the thickness of the carrier after the first polishing step. The wafer is then double-side polished in a second polishing step, in which less than 1 μm of material is removed from the surfaces of the wafer. Silicon semiconductor wafers having polished front and rear sides with a front side global planarity SBIRmax value of less than 100 nm, and a front side local planarity PSFQR value of 35 nm or less in an edge region, with an edge exclusion of 2 mm, are obtained.
摘要翻译： 半导体晶片在上和下抛光板之间被抛光，半导体晶片在两侧被抛光，同时通过提供抛光剂在载体的凹槽中被抛光。 将晶片在第一抛光步骤中进行双面抛光，其结果为负的突出端，其被定义为在第一抛光步骤之后晶片厚度与载体厚度之间的差异。 然后在第二抛光步骤中对晶片进行双面抛光，其中从晶片的表面去除少于1um的材料。 具有抛光的前侧和后侧的硅半导体晶片具有小于100nm的前侧全局平坦度SBIRmax值和边缘区域中边缘区域的前侧局部平坦度PSFQR值为35nm或更小，边缘排除为2mm的硅半导体晶片是 获得。
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公开(公告)号：US08242020B2
公开(公告)日：2012-08-14
申请号：US12547749
申请日：2009-08-26
IPC分类号： H01L21/302
CPC分类号： B24B37/042 , H01L21/02024
摘要： A method for producing a semiconductor wafer. The method includes placing the semiconductor wafer in a cutout in a carrier. Both sides of the semiconductor wafer are polished between an upper and a lower polishing plate with a polishing agent until the thickness of the center of the semiconductor wafer is less than the thickness of the carrier and from 10 μm to 30 μm of semiconductor wafer material is removed. The polishing agent contains 0.1 to 0.4% by weight of SiO2 and 0.1 to 0.9% by weight of an alkaline component.
摘要翻译： 一种半导体晶片的制造方法。 该方法包括将半导体晶片放置在载体中的切口中。 半导体晶片的两面用抛光剂在上下抛光板之间进行抛光，直到半导体晶片的中心厚度小于载体的厚度为止，半导体晶片材料的10μm至30μm为 删除。 抛光剂含有0.1至0.4重量％的SiO 2和0.1至0.9重量％的碱性组分。
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公开(公告)号：US20080305722A1
公开(公告)日：2008-12-11
申请号：US12154347
申请日：2008-05-22
IPC分类号： B24B7/20
CPC分类号： B24B37/30 , H01L21/30625
摘要： Single-sided polishing of bare semiconductor wafers is accomplished by using a polishing head with a membrane made of a resilient material by which polishing pressure is transmitted onto the backside of the semiconductor wafer to be polished, wherein the semiconductor wafer is pressed against a polishing cloth with a smooth surface while supplying a polishing agent, and is prevented from sliding off the membrane by a retainer ring. The retainer ring is provided with channels on a side surface facing the polishing cloth.
摘要翻译： 裸半导体晶片的单面抛光通过使用具有由弹性材料制成的膜的抛光头来实现，抛光压力通过抛光压力传递到待抛光的半导体晶片的背面，其中半导体晶片被压在抛光布上 在提供抛光剂的同时具有光滑的表面，并且通过保持环防止膜从膜上滑出。 保持环在面向抛光布的侧面上设置有通道。
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