公开(公告)号：US07645621B2

公开(公告)日：2010-01-12

申请号：US11872900

申请日：2007-10-16

申请人： Colin Brodsky ,  Mary Jane Brodsky ,  Sean Burns ,  Habib Hichri

发明人： Colin Brodsky ,  Mary Jane Brodsky ,  Sean Burns ,  Habib Hichri

IPC分类号： H01L21/66 ,  G01R31/26 ,  G01N21/00 ,  G01C5/00

CPC分类号： G01N21/956 ,  H01L22/20

摘要： Inspection methods. A method includes adhering an optical blocking layer directly onto and in direct mechanical contact with a semiconductor process wafer, the blocking layer being substantially opaque to a range of wavelengths of light; applying at least one layer over the blocking layer; and inspecting optically at least one wavelength at least one inspection area, the blocking layer extending substantially throughout the inspection area. An inspection method including adhering an optical absorbing layer to a semiconductor process wafer, where the absorbing layer is configured to substantially absorb a range of wavelengths of light; applying at least one layer over the absorbing layer; and inspecting optically at least one wavelength at least one inspection area of the process wafer. A manufacturing method including ascertaining if a defect is present within a photoresist layer, and changing a semiconductor manufacturing process to prevent the defect, if the defect is present.

摘要翻译： 检验方法 一种方法包括将光学阻挡层直接粘附到半导体工艺晶片上并与半导体工艺晶片直接机械接触，所述阻挡层对于一定波长的光的范围基本上是不透明的; 在阻挡层上施加至少一层; 并且在光学上至少检测至少一个波长的至少一个检查区域，所述阻挡层基本上延伸遍及所述检查区域。 一种检查方法，包括将光吸收层粘附到半导体处理晶片，其中吸收层被配置为基本上吸收一定范围的光的波长; 在吸收层上施加至少一层; 并且在光学上检查至少一个波长的处理晶片的至少一个检查区域。 如果存在缺陷，则包括确定光致抗蚀剂层内是否存在缺陷以及改变半导体制造工艺以防止缺陷的制造方法。

公开(公告)号：US20090097017A1

公开(公告)日：2009-04-16

申请号：US11872900

申请日：2007-10-16

申请人： Colin Brodsky ,  Mary Jane Brodsky ,  Sean Burns ,  Habib Hichri

发明人： Colin Brodsky ,  Mary Jane Brodsky ,  Sean Burns ,  Habib Hichri

IPC分类号： G01N21/00

CPC分类号： G01N21/956 ,  H01L22/20

摘要： Inspection methods. A method includes adhering an optical blocking layer directly onto and in direct mechanical contact with a semiconductor process wafer, the blocking layer being substantially opaque to a range of wavelengths of light; applying at least one layer over the blocking layer; and inspecting optically at least one wavelength at least one inspection area, the blocking layer extending substantially throughout the inspection area. An inspection method including adhering an optical absorbing layer to a semiconductor process wafer, where the absorbing layer is configured to substantially absorb a range of wavelengths of light; applying at least one layer over the absorbing layer; and inspecting optically at least one wavelength at least one inspection area of the process wafer. A manufacturing method including ascertaining if a defect is present within a photoresist layer, and changing a semiconductor manufacturing process to prevent the defect, if the defect is present.

摘要翻译： 检验方法 一种方法包括将光学阻挡层直接粘附到半导体工艺晶片上并与半导体工艺晶片直接机械接触，所述阻挡层对于一定波长的光的范围基本上是不透明的; 在阻挡层上施加至少一层; 并且在光学上至少检测至少一个波长的至少一个检查区域，所述阻挡层基本上延伸遍及所述检查区域。 一种检查方法，包括将光吸收层粘附到半导体处理晶片，其中吸收层被配置为基本上吸收一定范围的光的波长; 在吸收层上施加至少一层; 并且在光学上检查至少一个波长的处理晶片的至少一个检查区域。 如果存在缺陷，则包括确定光致抗蚀剂层内是否存在缺陷以及改变半导体制造工艺以防止缺陷的制造方法。

公开(公告)号：US20100112730A1

公开(公告)日：2010-05-06

申请号：US12649391

申请日：2009-12-30

申请人： Colin Brodsky ,  Mary Jane Brodsky ,  Sean Burns ,  Habib Hichri

发明人： Colin Brodsky ,  Mary Jane Brodsky ,  Sean Burns ,  Habib Hichri

IPC分类号： H01L21/66 ,  G01N21/88

CPC分类号： G01N21/956 ,  H01L22/20

摘要： Inspection methods. A method includes adhering an optical blocking layer directly onto and in direct mechanical contact with a semiconductor process wafer, the blocking layer being substantially opaque to a range of wavelengths of light; applying at least one layer over the blocking layer; and inspecting optically at least one wavelength at least one inspection area, the blocking layer extending substantially throughout the inspection area. An inspection method including adhering an optical absorbing layer to a semiconductor process wafer, where the absorbing layer is configured to substantially absorb a range of wavelengths of light; applying at least one layer over the absorbing layer; and inspecting optically at least one wavelength at least one inspection area of the process wafer. A manufacturing method including ascertaining if a defect is present within a photoresist layer, and changing a semiconductor manufacturing process to prevent the defect, if the defect is present.

摘要翻译： 检验方法 一种方法包括将光学阻挡层直接粘附到半导体工艺晶片上并与半导体工艺晶片直接机械接触，所述阻挡层对于一定波长的光的范围基本上是不透明的; 在阻挡层上施加至少一层; 并且在光学上至少检测至少一个波长的至少一个检查区域，所述阻挡层基本上延伸遍及所述检查区域。 一种检查方法，包括将光吸收层粘附到半导体处理晶片，其中吸收层被配置为基本上吸收一定范围的光的波长; 在吸收层上施加至少一层; 并且在光学上检查至少一个波长的处理晶片的至少一个检查区域。 如果存在缺陷，则包括确定光致抗蚀剂层内是否存在缺陷以及改变半导体制造工艺以防止缺陷的制造方法。

公开(公告)号：US08168451B2

公开(公告)日：2012-05-01

申请号：US12649391

申请日：2009-12-30

申请人： Colin J. Brodsky ,  Mary Jane Brodsky ,  Sean Burns ,  Habib Hichri

发明人： Colin J. Brodsky ,  Mary Jane Brodsky ,  Sean Burns ,  Habib Hichri

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： G01N21/956 ,  H01L22/20

摘要： Inspection methods. A method includes adhering an optical blocking layer directly onto and in direct mechanical contact with a semiconductor process wafer, the blocking layer being substantially opaque to a range of wavelengths of light; applying at least one layer over the blocking layer; and inspecting optically at least one wavelength at least one inspection area, the blocking layer extending substantially throughout the inspection area. An inspection method including adhering an optical absorbing layer to a semiconductor process wafer, where the absorbing layer is configured to substantially absorb a range of wavelengths of light; applying at least one layer over the absorbing layer; and inspecting optically at least one wavelength at least one inspection area of the process wafer. A manufacturing method including ascertaining if a defect is present within a photoresist layer, and changing a semiconductor manufacturing process to prevent the defect, if the defect is present.

摘要翻译： 检验方法 一种方法包括将光学阻挡层直接粘附到半导体工艺晶片上并与半导体工艺晶片直接机械接触，所述阻挡层对于一定波长的光的范围基本上是不透明的; 在阻挡层上施加至少一层; 并且在光学上至少检测至少一个波长的至少一个检查区域，所述阻挡层基本上延伸遍及所述检查区域。 一种检查方法，包括将光吸收层粘附到半导体处理晶片，其中吸收层被配置为基本上吸收一定范围的光的波长; 在吸收层上施加至少一层; 并且在光学上检查至少一个波长的处理晶片的至少一个检查区域。 如果存在缺陷，则包括确定光致抗蚀剂层内是否存在缺陷以及改变半导体制造工艺以防止缺陷的制造方法。

公开(公告)号：US20070178404A1

公开(公告)日：2007-08-02

申请号：US11307268

申请日：2006-01-30

申请人： Colin J. Brodsky ,  Mary Jane Brodsky ,  Wai-Kin Li ,  Steven A. Scheer

发明人： Colin J. Brodsky ,  Mary Jane Brodsky ,  Wai-Kin Li ,  Steven A. Scheer

IPC分类号： G03C1/00

CPC分类号： G03F7/091

摘要： A method of forming a relief image on a substrate including: applying over a substrate a layer of an antireflective coating; and vacuum processing the antireflective coating. This method reduces the number of pinhole defects present in the antireflective coating.

摘要翻译： 一种在衬底上形成凸版图像的方法，包括：在衬底上涂覆抗反射涂层; 并对抗反射涂层进行真空处理。 该方法减少了抗反射涂层中存在的针孔缺陷的数量。