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    After deposition method of thinning film to reduce pinhole defects
    5.
    发明授权
    After deposition method of thinning film to reduce pinhole defects 失效

    公开(公告)号：US07132316B2

    公开(公告)日：2006-11-07

    申请号：US11029812

    申请日：2005-01-05

    申请人： Wai-Kin Li ,  Colin J. Brodsky ,  Steven A. Scheer

    发明人： Wai-Kin Li ,  Colin J. Brodsky ,  Steven A. Scheer

    IPC分类号： H01L21/00 ,  H01L21/8238

    CPC分类号： G03F7/11 ,  H01L21/312

    摘要： A method of forming a thin film is provided in which a film having a first thickness is deposited over a substrate, wherein the first thickness is greater than a thickness at which the initially deposited film begins to dewet from the substrate. The initially deposited film is then stabilized to form a stabilized film. Thereafter, the stabilized film is then thinned to a second thickness, such that the resulting film now has a smaller thickness than the thickness at which the initially deposited film would begin to dewet from the substrate. However, as a result of the prior stabilization, the reduced thickness film remains free of dewetting defects.

    Film stack having under layer for preventing pinhole defects
    6.
    发明授权
    Film stack having under layer for preventing pinhole defects 失效
    薄膜叠层具有防止针孔缺陷的底层

    公开(公告)号：US07473461B2

    公开(公告)日：2009-01-06

    申请号：US11827014

    申请日：2007-07-10

    申请人： Colin J. Brodsky ,  Wai-Kin Li ,  Steven A. Scheer

    发明人： Colin J. Brodsky ,  Wai-Kin Li ,  Steven A. Scheer

    IPC分类号： B32B9/00 ,  B32B33/00

    CPC分类号： B32B27/00 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/265 ,  Y10T428/31504 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

    摘要： A film stack is provided in which a first film including a first polymer directly contacts a surface of a substrate at which a given material is exposed. A second film, which can include a second polymer other than the first polymer, is formed to have an inner surface contacting the first film. The second film can have a thickness at which a free energy of the second film would be negative if the second film were disposed directly on the substrate. Desirably, the resulting second film is substantially free of dewetting defects.

    摘要翻译： 提供了一种膜叠层，其中包括第一聚合物的第一膜直接接触暴露给定材料的基板的表面。 可以包括第一聚合物以外的第二聚合物的第二膜被形成为具有与第一膜接触的内表面。 如果第二膜直接设置在基板上，则第二膜可以具有第二膜的自由能为负的厚度。 理想地，所得到的第二膜基本上没有脱湿缺陷。

    Method of preventing pinhole defects through co-polymerization
    8.
    发明授权
    Method of preventing pinhole defects through co-polymerization 有权
    通过共聚防止针孔缺陷的方法

    公开(公告)号：US07632631B2

    公开(公告)日：2009-12-15

    申请号：US11029813

    申请日：2005-01-05

    申请人： Steven A. Scheer ,  Colin J. Brodsky

    发明人： Steven A. Scheer ,  Colin J. Brodsky

    IPC分类号： G03F7/00

    CPC分类号： G03F7/168 ,  G03F7/091 ,  G03F7/11 ,  Y10S430/136

    摘要： A method is provided for forming a stable thin film on a substrate. The method includes depositing a co-polymer composition having a first component and a second component onto a substrate to form a stable film having a first thickness. The first component has first dielectric properties not enabling the first component by itself to produce the stable film having the first thickness. However, the second component has second dielectric properties which impart stability to the film at the first thickness. In a preferred embodiment, the second component includes a leaving group, and the method further includes first thermal processing the film to cause a solvent but not the leaving group to be removed from the film, after which second thermal processing is performed to at least substantially remove the leaving group from the film. As a result, the film is reduced to a second thickness smaller than the first thickness, and the film remains stable during both the first and the second thermal processing.

    摘要翻译： 提供了在基板上形成稳定的薄膜的方法。 该方法包括将具有第一组分和第二组分的共聚物组合物沉积到基底上以形成具有第一厚度的稳定膜。 第一组分具有不能使第一组分本身产生具有第一厚度的稳定膜的第一介电性质。 然而，第二组分具有赋予第一厚度的薄膜稳定性的第二介电特性。 在优选的实施方案中，第二组分包括离去基团，并且该方法还包括首先热处理膜以引起溶剂而不是离开基团从膜中除去，之后进行第二热处理至少基本上 从电影中删除离开组。 结果，膜被还原成小于第一厚度的第二厚度，并且在第一和第二热处理期间膜保持稳定。

    Method of forming film stack having under layer for preventing pinhole defects
    9.
    发明授权
    Method of forming film stack having under layer for preventing pinhole defects 有权
    形成具有下层以防止针孔缺陷的薄膜叠层的方法

    公开(公告)号：US07541065B2

    公开(公告)日：2009-06-02

    申请号：US11820302

    申请日：2007-06-18

    申请人： Colin J. Brodsky ,  Wai-Kin Li ,  Steven A. Scheer

    发明人： Colin J. Brodsky ,  Wai-Kin Li ,  Steven A. Scheer

    IPC分类号： B05D7/00

    CPC分类号： B32B27/00 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/265 ,  Y10T428/31504 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

    摘要： A method is provided for forming a film stack in which a first film including a first polymer is formed on a substrate. A second film, which can include a second polymer other than the first polymer, is formed to have an inner surface disposed on the first film. The second film can have a thickness at which a free energy of the second film would be negative if the second film were disposed directly on the substrate. Desirably, the resulting second film is substantially free of dewetting defects.

    摘要翻译： 提供了一种用于形成膜叠层的方法，其中在基板上形成包括第一聚合物的第一膜。 可以包括第一聚合物以外的第二聚合物的第二膜形成为具有设置在第一膜上的内表面。 如果第二膜直接设置在基板上，则第二膜可以具有第二膜的自由能为负的厚度。 理想地，所得到的第二膜基本上没有脱湿缺陷。

    Film stack having under layer for preventing pinhole defects
    10.
    发明授权
    Film stack having under layer for preventing pinhole defects 有权
    薄膜叠层具有防止针孔缺陷的底层

    公开(公告)号：US07267863B2

    公开(公告)日：2007-09-11

    申请号：US10880818

    申请日：2004-06-30

    申请人： Colin J. Brodsky ,  Wai-Kin Li ,  Steven A. Scheer

    发明人： Colin J. Brodsky ,  Wai-Kin Li ,  Steven A. Scheer

    IPC分类号： B32B18/00 ,  B32B27/08 ,  B32B27/30

    CPC分类号： B32B27/00 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/265 ,  Y10T428/31504 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

    摘要： A film stack and method of forming a film stack are provided in which a first film is disposed on a substrate and a second film has an inner surface disposed on the first film. The second film has a thickness smaller than a reference thickness at which the second film would begin to dewet from the substrate if the second film were disposed directly on the substrate. However, the second film is substantially free of dewetting defects because it is disposed overlying the first film which has a first Hamaker constant having a negative value with respect to the substrate.

    摘要翻译： 提供了一种薄膜叠层和形成薄膜叠层的方法，其中第一薄膜设置在基底上，第二薄膜具有设置在第一薄膜上的内表面。 如果第二膜直接设置在基板上，则第二膜的厚度小于第二膜从基板开始露出的基准厚度。 然而，第二膜基本上没有脱湿缺陷，因为它被布置在第一膜上，该第一膜具有相对于基底具有负值的第一Hamaker常数。