公开(公告)号：US20060009005A1

公开(公告)日：2006-01-12

申请号：US10984045

申请日：2004-11-09

申请人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： H01L21/76 ,  H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/31053 ,  H01L21/31056 ,  H01L21/76229 ,  Y10S438/942

摘要： A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relatively large active regions and a number of relatively small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is first formed. A number of shallow trenches are formed between the active regions. An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial reverse active mask has an opening at a central part of each relatively large active region. The opening exposes a portion of the oxide layer. The opening has at least a dummy pattern. The oxide layer on the central part of each large active region is removed to expose the silicon nitride layer. The partial reverse active mask is removed. The oxide layer is planarized to expose the silicon nitride layer.

摘要翻译： 公开了用于形成浅沟槽隔离的化学机械抛光的方法。 提供具有多个有源区的基板，包括多个相对较大的有源区和多个相对小的有源区。 该方法包括以下步骤。 首先形成衬底上的氮化硅层。 在活性区域之间形成多个浅沟槽。 在衬底上形成氧化物层，使得浅沟槽被氧化物层填充。 在氧化物层上形成部分反向有源掩模。 部分反向有源掩模在每个相对大的有效区域的中心部分具有开口。 开口暴露氧化物层的一部分。 开口至少有一个虚拟图案。 去除每个大的有源区的中心部分的氧化物层，以露出氮化硅层。 去除部分反向主动掩模。 将氧化物层平坦化以暴露氮化硅层。

公开(公告)号：US06810511B2

公开(公告)日：2004-10-26

申请号：US10284683

申请日：2002-10-30

申请人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： G06F1750

CPC分类号： H01L21/31053 ,  H01L21/76229 ,  H01L23/528 ,  H01L27/0207 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of designing an active region pattern with a shifted dummy pattern, wherein an integrated circuit having an original active region pattern thereon is provided. The original active region pattern is expanded with a first parameter of line width to obtain a first pattern. By subtracting the first pattern, a second pattern is obtained. A dummy pattern which comprises an array of a plurality of elements is provided. By shifting the elements, a shifted dummy pattern is obtained. The second pattern and the shifted dummy pattern are combined, so that an overlapped region thereof is extracted as a combined dummy pattern. The combined dummy pattern is expanded with a second parameter of line width, so that a resultant dummy pattern is obtained. The resultant dummy pattern is added to the first pattern, so that the active region pattern with a shifted dummy pattern is obtained.

摘要翻译： 一种设计具有偏移的虚设图案的有源区域图案的方法，其中提供其上具有原始有源区域图案的集成电路。 原始活动区域图案用线宽的第一参数展开以获得第一图案。 通过减去第一图案，获得第二图案。 提供了包括多个元件的阵列的虚拟图案。 通过移动元件，获得移动的虚拟图案。 第二图案和移位的虚拟图案被组合，使得其重叠区域被提取为组合的虚拟图案。 组合的虚拟图案用线宽的第二参数扩展，从而获得合成的虚拟图案。 将所得到的虚拟图案添加到第一图案，从而获得具有偏移的虚设图案的有源区域图案。

公开(公告)号：US07018906B2

公开(公告)日：2006-03-28

申请号：US10984045

申请日：2004-11-09

申请人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： H01L21/76 ,  H01L21/20

CPC分类号： H01L21/31144 ,  H01L21/31053 ,  H01L21/31056 ,  H01L21/76229 ,  Y10S438/942

摘要： A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relatively large active regions and a number of relatively small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is first formed. A number of shallow trenches are formed between the active regions. An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial reverse active mask has an opening at a central part of each relatively large active region. The opening exposes a portion of the oxide layer. The opening has at least a dummy pattern. The oxide layer on the central part of each large active region is removed to expose the silicon nitride layer. The partial reverse active mask is removed. The oxide layer is planarized to expose the silicon nitride layer.

摘要翻译： 公开了用于形成浅沟槽隔离的化学机械抛光的方法。 提供具有多个有源区的基板，包括多个相对较大的有源区和多个相对小的有源区。 该方法包括以下步骤。 首先形成衬底上的氮化硅层。 在活性区域之间形成多个浅沟槽。 在衬底上形成氧化物层，使得浅沟槽被氧化物层填充。 在氧化物层上形成部分反向有源掩模。 部分反向有源掩模在每个相对大的有效区域的中心部分具有开口。 开口暴露氧化物层的一部分。 开口至少有一个虚拟图案。 去除每个大的有源区的中心部分的氧化物层，以露出氮化硅层。 去除部分反向主动掩模。 将氧化物层平坦化以暴露氮化硅层。

公开(公告)号：US06291111B1

公开(公告)日：2001-09-18

申请号：US09165148

申请日：1998-10-01

申请人： Coming Chen ,  Juan-Yuan Wu ,  Jenn Tsao ,  Water Lur

发明人： Coming Chen ,  Juan-Yuan Wu ,  Jenn Tsao ,  Water Lur

IPC分类号： G03F700

CPC分类号： H01L21/76229 ,  H01L21/31053

摘要： A method of trench polishing. A semiconductor substrate is provided. A photo-mask with a pattern is provided. The method of fabricating the photo-mask further comprising providing an original pattern which comprises a plurality of active regions with individual size. The original pattern is enlarged outwards to connect and merge some of the active regions. The active regions is diminished inwards until some small active regions eliminate, the diminished line width being denoted as B. A reverse treatment is performed to obtain a reverse pattern. The reverse pattern is enlarged with a line width C. The reverse pattern is combined with the original pattern. The substrate is patterned with the photo-mask with the combined pattern. An insulation layer is formed on the substrate. The insulation layer is polished.

摘要翻译： 沟槽抛光方法。 提供半导体衬底。 提供带有图案的照相面具。 制造光掩模的方法还包括提供包括多个具有各自尺寸的活性区域的原始图案。 原始图案向外扩大以连接和合并一些活动区域。 活性区域向内减小，直到一些小的活性区域消除，线宽度减小为B。进行反向处理以获得反向图案。 反向图案以线宽C放大。反向图案与原始图案组合。 用组合图案的光掩模对衬底进行图案化。 在基板上形成绝缘层。 绝缘层被抛光。

公开(公告)号：US06228209B1

公开(公告)日：2001-05-08

申请号：US09174993

申请日：1998-10-19

申请人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： C23F102

CPC分类号： H01L21/76865 ,  C23C14/568 ,  H01L21/76844

摘要： A fabrication equipment to form an opening plug is provided. The equipment at least includes a load/unload chamber, a degas chamber, an usual sputtering chamber, a radio frequency (RF) sputtering chamber, a physical vapor deposition (PVD) chamber, and a chemical vapor deposition (CVD). The load/unload chamber is used to load a substrate. The degas chamber is used to remove moisture on the substrate. The usual sputtering chamber is used to form an opening on the substrate. The PVD chamber is used to form a first glue layer. The RF sputtering chamber is used to remove an overhang structure on the first glue layer. The CVD chamber is used to form a second glue layer over the first glue layer.

摘要翻译： 提供一种形成开口塞的制造设备。 该设备至少包括装载/卸载室，脱气室，通常的溅射室，射频（RF）溅射室，物理气相沉积（PVD）室和化学气相沉积（CVD））。 加载/卸载室用于装载基板。 脱气室用于去除基材上的水分。 通常的溅射室用于在基板上形成开口。 PVD室用于形成第一胶层。 RF溅射室用于去除第一胶层上的悬垂结构。 CVD室用于在第一胶层上形成第二胶层。

公开(公告)号：US06486040B2

公开(公告)日：2002-11-26

申请号：US09991395

申请日：2001-11-20

申请人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： H01L2176

CPC分类号： H01L21/31144 ,  H01L21/31053 ,  H01L21/31056 ,  H01L21/76229 ,  Y10S438/942

摘要： A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relative large active regions and a number of relative small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is first formed. A number of shallow trenches are formed between the active regions. An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial rever active mask has an opening at a central part of each relative large active region. The opening exposes a portion of the oxide layer. The opening has at least a dummy pattern. The oxide layer on the central part of each large active region is removed to expose the silicon nitride layer. The partial reverse active mask is removed. The oxide layer is planarized to expose the silicon nitride layer.

公开(公告)号：US06178543B1

公开(公告)日：2001-01-23

申请号：US09114052

申请日：1998-07-10

申请人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： G06F1750

CPC分类号： H01L21/31053 ,  H01L21/76229 ,  H01L23/528 ,  H01L27/0207 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of designing an active region pattern with a shifted dummy pattern, wherein an integrated circuit having an original active region pattern thereon is provided. The original active region pattern is expanded with a first parameter of line width to obtain a first pattern. By subtracting the first pattern, a second pattern is obtained. A dummy pattern which comprises an array of a plurality of elements is provided. By shifting the elements, a shifted dummy pattern is obtained. The second pattern and the shifted dummy pattern are combined, so that an overlapped region thereof is extracted as a combined dummy pattern. The combined dummy pattern is expanded with a second parameter of line width, so that a resultant dummy pattern is obtained. The resultant dummy pattern is added to the first pattern, so that the active region pattern with a shifted dummy pattern is obtained.

摘要翻译： 一种设计具有偏移的虚设图案的有源区域图案的方法，其中提供其上具有原始有源区域图案的集成电路。 原始活动区域图案用线宽的第一参数展开以获得第一图案。 通过减去第一图案，获得第二图案。 提供了包括多个元件的阵列的虚拟图案。 通过移动元件，获得移动的虚拟图案。 第二图案和移位的虚拟图案被组合，使得其重叠区域被提取为组合的虚拟图案。 组合的虚拟图案用线宽的第二参数扩展，从而获得合成的虚拟图案。 将所得到的虚拟图案添加到第一图案，从而获得具有偏移的虚设图案的有源区域图案。

公开(公告)号：US06169012A

公开(公告)日：2001-01-02

申请号：US09111007

申请日：1998-07-07

申请人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： H01L2176

CPC分类号： H01L21/31144 ,  H01L21/31053 ,  H01L21/31056 ,  H01L21/76229 ,  Y10S438/942

摘要： A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relative large active regions and a number of relative small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is first formed. A number of shallow trenches are formed between the active regions. An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial rever active mask has an opening at a central part of each relative large active region. The opening exposes a portion of the oxide layer. The opening has at least a dummy pattern. The oxide layer on the central part of each large active region is removed to expose the silicon nitride layer. The partial reverse active mask is removed. The oxide layer is planarized to expose the silicon nitride layer.

摘要翻译： 公开了用于形成浅沟槽隔离的化学机械抛光的方法。 提供了具有多个有源区的衬底，包括多个相对较大的有源区和多个相对小的有源区。 该方法包括以下步骤。 首先形成衬底上的氮化硅层。 在活性区域之间形成多个浅沟槽。 在衬底上形成氧化物层，使得浅沟槽被氧化物层填充。 在氧化物层上形成部分反向有源掩模。 部分反射器主动掩模在每个相对较大的有效区域的中心部分具有开口。 开口暴露氧化物层的一部分。 开口至少有一个虚拟图案。 去除每个大的有源区的中心部分的氧化物层，以露出氮化硅层。 去除部分反向主动掩模。 将氧化物层平坦化以暴露氮化硅层。

公开(公告)号：US07001713B2

公开(公告)日：2006-02-21

申请号：US09991466

申请日：2001-11-21

申请人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： G03F7/00 ,  G03F7/36

CPC分类号： H01L21/76229 ,  H01L21/31053

摘要： A method of forming a partial reverse active mask. A mask pattern comprising a large active region pattern with an original dimension and a small active region pattern is provided. The large active region pattern and the small active region pattern are shrunk until the small active region pattern disappears. The large active region pattern enlarged to a dimension slightly smaller than the original dimension.

公开(公告)号：US06838357B2

公开(公告)日：2005-01-04

申请号：US10304523

申请日：2002-11-26

申请人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

发明人： Coming Chen ,  Juan-Yuan Wu ,  Water Lur

IPC分类号： H01L21/762 ,  H01L21/76

CPC分类号： H01L21/31144 ,  H01L21/31053 ,  H01L21/31056 ,  H01L21/76229 ,  Y10S438/942

摘要： A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relative large active regions and a number of relative small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is first formed A number of shallow trenches are formed between the active regions An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial rever active mask has an opening at a central part of each relative large active region. The opening exposes a portion of the oxide layer. The opening has at least a dummy pattern. The oxide layer on the central part of each large active region is removed to expose the silicon nitride layer. The partial reverse active mask is removed The oxide layer is planarized to expose the silicon nitride layer.