公开(公告)号：US20060264067A1

公开(公告)日：2006-11-23

申请号：US11456062

申请日：2006-07-06

申请人： Shreyas Kher ,  Shixue Han ,  Craig Metzner

发明人： Shreyas Kher ,  Shixue Han ,  Craig Metzner

IPC分类号： H01L21/31

CPC分类号： H01L21/02312 ,  C23C16/0218 ,  C23C16/0227 ,  C23C16/405 ,  C23C16/509 ,  C23C16/56 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/02304 ,  H01L21/02307 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31683

摘要： Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. One embodiment of a method of forming a high k dielectric layer over a substrate includes pre-cleaning a surface of a substrate to remove native oxides, pre-treating the surface of the substrate with a hydroxylating agent, and forming a high k dielectric layer over the surface of the substrate. One embodiment of a method of forming a hafnium containing layer over a substrate includes introducing an acid solution to a surface of a substrate, introducing a hydrogen containing gas and an oxygen containing gas to the surface of the substrate, and forming a hafnium containing layer over the substrate.

摘要翻译： 本发明的实施例涉及用于在基板上形成高k电介质材料的薄膜的表面处理。 在衬底上形成高k电介质层的方法的一个实施例包括预清洁衬底的表面以去除天然氧化物，用羟基化剂预处理衬底的表面，以及形成高k电介质层 衬底的表面。 在衬底上形成含铪层的方法的一个实施方案包括将酸溶液引入衬底的表面，将含氢气体和含氧气体引入衬底的表面，并且形成含铪层 底物。

公开(公告)号：US20060223339A1

公开(公告)日：2006-10-05

申请号：US11421283

申请日：2006-05-31

申请人： Craig Metzner ,  Shreyas Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram Athreya

发明人： Craig Metzner ,  Shreyas Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram Athreya

IPC分类号： H01L21/31

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/318

摘要： Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.

摘要翻译： 通过依次将金属有机化合物与臭氧一起或在远离等离子体室中形成的氧自由基或氮自由基反应而形成金属化合物如金属氧化物或金属氮化物的方法。 当通过原子层沉积沉积至少10秒的循环时间时，金属化合物具有惊人的和显着改善的均匀性。 当金属有机化合物在不存在溶剂或过量配体的过程条件下蒸发时，金属化合物也不含可检测的碳。

公开(公告)号：US20080057737A1

公开(公告)日：2008-03-06

申请号：US11929087

申请日：2007-10-30

申请人： CRAIG METZNER ,  Shreyas Kher ,  Shixue Han

发明人： CRAIG METZNER ,  Shreyas Kher ,  Shixue Han

IPC分类号： H01L21/469

CPC分类号： H01L21/02307 ,  C23C14/083 ,  C23C14/10 ,  C23C14/5806 ,  C23C14/5826 ,  C23C14/5853 ,  C23C14/586 ,  C23C16/0218 ,  C23C16/0227 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31645 ,  H01L21/31683 ,  H01L29/517 ,  H01L29/78

摘要： A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydrofluoric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.

摘要翻译： 在预处理表面上形成电介质叠层的方法。 该方法包括预先清洁半导体晶片以除去天然氧化物，例如通过施加氢氟酸以形成HF最后的表面，用臭氧化的去离子水预处理HF-最后的表面，在预处理后形成电介质叠层 表面，并在围绕晶片的工艺区域中提供NH 3 3流。 或者，该方法包括用NH 3预处理HF-最后表面，在预处理之后形成堆叠，并且在工艺中提供N 2 O 3流 成形后的晶片周围的区域。 该方法还包括使用原位蒸汽产生过程预处理HF-最后的表面，在预处理的表面上形成叠层，以及在成形后退火晶片。 预处理包括在围绕HF最后表面的处理区域中提供惰性气体流，使处理区中的氢与氧化剂反应非常短的时间，并且在反应之后在处理区中提供惰性气体。

公开(公告)号：US20070059948A1

公开(公告)日：2007-03-15

申请号：US11421293

申请日：2006-05-31

申请人： Craig Metzner ,  Shreyas Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram Athreya

发明人： Craig Metzner ,  Shreyas Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram Athreya

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/318

摘要： Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.

摘要翻译： 本发明的实施方案通过将底物顺序地暴露于铪前体和活性氧或氮物质（例如臭氧，氧自由基或氮自由基）来提供用于形成铪材料如氧化物和氮化物的方法。 当通过这些原子层沉积（ALD）工艺沉积时，沉积的铪材料具有显着改善的均匀性。 在一个实施例中，ALD室包含具有底表面的扩张通道，该底表面的尺寸和形状基本上覆盖位于基板基座上的基板。 在用于形成铪材料的ALD工艺中，工艺气体在通过扩张通道并形成衬底表面时形成涡流模式。 将衬底依次暴露于脉冲进入具有涡流的处理室的化学前体。

公开(公告)号：US20050009371A1

公开(公告)日：2005-01-13

申请号：US10913941

申请日：2004-08-06

申请人： Craig Metzner ,  Shreyas Kher ,  Shixue Han

发明人： Craig Metzner ,  Shreyas Kher ,  Shixue Han

IPC分类号： C23C16/02 ,  C23C16/40 ,  C23C16/56 ,  H01L21/316 ,  H01L21/469

CPC分类号： H01L21/02307 ,  C23C14/083 ,  C23C14/10 ,  C23C14/5806 ,  C23C14/5826 ,  C23C14/5853 ,  C23C14/586 ,  C23C16/0218 ,  C23C16/0227 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31645 ,  H01L21/31683 ,  H01L29/517 ,  H01L29/78

摘要： A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.

公开(公告)号：US07569500B2

公开(公告)日：2009-08-04

申请号：US11421283

申请日：2006-05-31

申请人： Craig R. Metzner ,  Shreyas S. Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram A. Athreya

发明人： Craig R. Metzner ,  Shreyas S. Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram A. Athreya

IPC分类号： H01L21/31

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/318

摘要： Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.

摘要翻译： 通过依次将金属有机化合物与臭氧一起或在远离等离子体室中形成的氧自由基或氮自由基反应而形成金属化合物如金属氧化物或金属氮化物的方法。 当通过原子层沉积沉积至少10秒的循环时间时，金属化合物具有惊人的和显着改善的均匀性。 当金属有机化合物在不存在溶剂或过量配体的过程条件下蒸发时，金属化合物也不含可检测的碳。

公开(公告)号：US08071167B2

公开(公告)日：2011-12-06

申请号：US12794047

申请日：2010-06-04

申请人： Shreyas S. Kher ,  Shixue Han ,  Craig R. Metzner

发明人： Shreyas S. Kher ,  Shixue Han ,  Craig R. Metzner

IPC分类号： C23C16/40

CPC分类号： H01L21/02312 ,  C23C16/0218 ,  C23C16/0227 ,  C23C16/405 ,  C23C16/509 ,  C23C16/56 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/02304 ,  H01L21/02307 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31683

摘要： Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. One embodiment of a method of forming a high k dielectric layer over a substrate includes pre-cleaning a surface of a substrate to remove native oxides, pre-treating the surface of the substrate with a hydroxylating agent, and forming a high k dielectric layer over the surface of the substrate. One embodiment of a method of forming a hafnium containing layer over a substrate includes introducing an acid solution to a surface of a substrate, introducing a hydrogen containing gas and an oxygen containing gas to the surface of the substrate, and forming a hafnium containing layer over the substrate.

摘要翻译： 本发明的实施例涉及用于在基板上形成高k电介质材料的薄膜的表面处理。 在衬底上形成高k电介质层的方法的一个实施例包括预清洁衬底的表面以去除天然氧化物，用羟基化剂预处理衬底的表面，以及形成高k电介质层 衬底的表面。 在衬底上形成含铪层的方法的一个实施方案包括将酸溶液引入衬底的表面，将含氢气体和含氧气体引入衬底的表面，并且形成含铪层 底物。

公开(公告)号：US20100239758A1

公开(公告)日：2010-09-23

申请号：US12794047

申请日：2010-06-04

申请人： Shreyas S. Kher ,  Shixue Han ,  Craig R. Metzner

发明人： Shreyas S. Kher ,  Shixue Han ,  Craig R. Metzner

IPC分类号： C23C16/42 ,  C23C16/40

CPC分类号： H01L21/02312 ,  C23C16/0218 ,  C23C16/0227 ,  C23C16/405 ,  C23C16/509 ,  C23C16/56 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/02304 ,  H01L21/02307 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31683

摘要： Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. One embodiment of a method of forming a high k dielectric layer over a substrate includes pre-cleaning a surface of a substrate to remove native oxides, pre-treating the surface of the substrate with a hydroxylating agent, and forming a high k dielectric layer over the surface of the substrate. One embodiment of a method of forming a hafnium containing layer over a substrate includes introducing an acid solution to a surface of a substrate, introducing a hydrogen containing gas and an oxygen containing gas to the surface of the substrate, and forming a hafnium containing layer over the substrate.

摘要翻译： 本发明的实施例涉及用于在基板上形成高k电介质材料的薄膜的表面处理。 在衬底上形成高k电介质层的方法的一个实施例包括预清洁衬底的表面以去除天然氧化物，用羟基化剂预处理衬底的表面，以及形成高k电介质层 衬底的表面。 在衬底上形成含铪层的方法的一个实施方案包括将酸溶液引入衬底的表面，将含氢气体和含氧气体引入衬底的表面，并且形成含铪层 底物。

公开(公告)号：US07067439B2

公开(公告)日：2006-06-27

申请号：US10247103

申请日：2002-09-19

申请人： Craig R. Metzner ,  Shreyas S. Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram A. Athreya

发明人： Craig R. Metzner ,  Shreyas S. Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram A. Athreya

IPC分类号： H01L21/31

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/318

摘要： Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.

公开(公告)号：US07569501B2

公开(公告)日：2009-08-04

申请号：US11421293

申请日：2006-05-31

申请人： Craig R. Metzner ,  Shreyas S. Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram A. Athreya

发明人： Craig R. Metzner ,  Shreyas S. Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram A. Athreya

IPC分类号： H01L21/31

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/318

摘要： Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.

摘要翻译： 本发明的实施方案通过将底物顺序地暴露于铪前体和活性氧或氮物质（例如臭氧，氧自由基或氮自由基）来提供用于形成铪材料如氧化物和氮化物的方法。 当通过这些原子层沉积（ALD）工艺沉积时，沉积的铪材料具有显着改善的均匀性。 在一个实施例中，ALD室包含具有底表面的扩张通道，该底表面的尺寸和形状基本上覆盖位于基板基座上的基板。 在用于形成铪材料的ALD工艺中，工艺气体在通过扩张通道并形成衬底表面时形成涡流模式。 将衬底依次暴露于脉冲进入具有涡流的处理室的化学前体。