公开(公告)号：US07569500B2

公开(公告)日：2009-08-04

申请号：US11421283

申请日：2006-05-31

申请人： Craig R. Metzner ,  Shreyas S. Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram A. Athreya

发明人： Craig R. Metzner ,  Shreyas S. Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram A. Athreya

IPC分类号： H01L21/31

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/318

摘要： Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.

摘要翻译： 通过依次将金属有机化合物与臭氧一起或在远离等离子体室中形成的氧自由基或氮自由基反应而形成金属化合物如金属氧化物或金属氮化物的方法。 当通过原子层沉积沉积至少10秒的循环时间时，金属化合物具有惊人的和显着改善的均匀性。 当金属有机化合物在不存在溶剂或过量配体的过程条件下蒸发时，金属化合物也不含可检测的碳。

公开(公告)号：US07569501B2

公开(公告)日：2009-08-04

申请号：US11421293

申请日：2006-05-31

申请人： Craig R. Metzner ,  Shreyas S. Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram A. Athreya

发明人： Craig R. Metzner ,  Shreyas S. Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram A. Athreya

IPC分类号： H01L21/31

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/318

摘要： Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.

摘要翻译： 本发明的实施方案通过将底物顺序地暴露于铪前体和活性氧或氮物质（例如臭氧，氧自由基或氮自由基）来提供用于形成铪材料如氧化物和氮化物的方法。 当通过这些原子层沉积（ALD）工艺沉积时，沉积的铪材料具有显着改善的均匀性。 在一个实施例中，ALD室包含具有底表面的扩张通道，该底表面的尺寸和形状基本上覆盖位于基板基座上的基板。 在用于形成铪材料的ALD工艺中，工艺气体在通过扩张通道并形成衬底表面时形成涡流模式。 将衬底依次暴露于脉冲进入具有涡流的处理室的化学前体。

公开(公告)号：US07067439B2

公开(公告)日：2006-06-27

申请号：US10247103

申请日：2002-09-19

申请人： Craig R. Metzner ,  Shreyas S. Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram A. Athreya

发明人： Craig R. Metzner ,  Shreyas S. Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram A. Athreya

IPC分类号： H01L21/31

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/318

摘要： Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.